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JP6890520B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP6890520B2
JP6890520B2 JP2017194118A JP2017194118A JP6890520B2 JP 6890520 B2 JP6890520 B2 JP 6890520B2 JP 2017194118 A JP2017194118 A JP 2017194118A JP 2017194118 A JP2017194118 A JP 2017194118A JP 6890520 B2 JP6890520 B2 JP 6890520B2
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Japan
Prior art keywords
bonding layer
resin
semiconductor device
power semiconductor
bonding
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JP2017194118A
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JP2019067986A (ja
Inventor
翔 熊田
翔 熊田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2017194118A priority Critical patent/JP6890520B2/ja
Priority to US16/029,760 priority patent/US10468368B2/en
Priority to DE102018213859.1A priority patent/DE102018213859A1/de
Priority to CN201811152150.9A priority patent/CN109616460B/zh
Publication of JP2019067986A publication Critical patent/JP2019067986A/ja
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Publication of JP6890520B2 publication Critical patent/JP6890520B2/ja
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Description

本発明は、半導体素子が配線部材に接合される電力用半導体装置に関する。
半導体装置の中でも電力用半導体装置は、産業用機器から家電及び情報端末まで幅広い機器の主電力（パワー）の制御に用いられ、とくに輸送機器等においては高い信頼性が求められている。一方で、従来のシリコン（Ｓｉ）からなる半導体素子に代えて、炭化珪素（ＳｉＣ）等のワイドバンドギャップ半導体からなる半導体素子を備えた電力用半導体装置の開発が進められており、電力用半導体装置の高パワー密度化及び高温動作化が進んでいる。
高温動作での接合信頼性を高めるためには、半導体素子自体の耐熱性を向上させるだけでなく、半導体素子を回路部材に接合する接合材の信頼性を高める必要がある。そこで、焼結金属体を含む接合材を用いて半導体素子を回路基板やヒートシンク等の回路部材に接合する、いわゆる焼結接合を用いた電力用半導体装置の製造方法が提案されている（例えば、特許文献１）。
さて一般的に、金属粒子は粒子径が所定のサイズよりも小さくなると、バルク金属に比べて非常に活性な表面状態を有するようになり、表面エネルギーを減らす方向へ容易に反応が進行する。そこで、焼結接合に用いる接合材には、ナノオーダーから数マイクロオーダーの焼結性金属粒子が含まれる。このような接合材によれば、その金属粒子は、バルク金属の融点よりも低温で溶融及び凝固するが、接合材の接合後にはバルク金属の融点まで再溶融することがない。したがって、焼結性金属粒子の焼結接合を用いると、バルク金属などの融点よりも低い温度での接合が可能となるため、接合温度の上昇に伴う部材の損傷や製造コストの増加が抑制された、接合温度よりも高い耐熱性を有する電力用半導体装置が得られる。
さて、反応性の高い焼結性金属粒子は、接合前の状態での反応の進行を抑制するために有機保護膜で覆われている。この有機保護膜は、接合時の加熱により分解及び除去され、金属粒子同士の接触が促されることで焼結が進行し接合が可能となる。
特開２０１１−２４９２５７号公報
しかしながら、焼結性金属粒子を用いて、半導体素子を配線部材に接合したトランスファーモールド型パワーモジュールでは、焼結金属体と樹脂との接着強度が不足し、パワーモジュール動作時に、焼結金属体などの接合層から樹脂が剥離するという問題があった。
そこで、本発明は、上記のような問題点を鑑みてなされたものであり、接合層と樹脂との接合強度を向上させることが可能な技術を提供することを目的とする。
本発明に係る電力用半導体装置は、配線部材と、半導体素子と、前記配線部材と前記半導体素子とを接合し、焼結金属体からなる接合層と、前記配線部材、前記半導体素子、及び、前記接合層を覆う樹脂とを備え、前記接合層は、前記樹脂と隣接して設けられ、前記樹脂が充填された複数の空隙を有する第１接合層を含み、前記樹脂に含まれる複数のフィラーの幅のうちの最大幅は、前記第１接合層の前記複数の空隙の径のうちの最小径よりも大きく、前記樹脂は、前記フィラーが入り込んだ前記空隙よりも前記フィラーが入り込んでいない前記空隙に充填され易い。
本発明によれば、樹脂に含まれるフィラーの最大幅は、第１接合層の空隙の最小径よりも大きい。このような構成によれば、第１接合層に対する樹脂のアンカー効果を高めることができるので、接合層と樹脂との接着強度を向上させることができる。
実施の形態１に係る電力用半導体装置の要部の構成を示す平面図である。 図１のＡ−Ａ線の断面図である。 実施の形態１に係る電力用半導体装置の主要な製造工程を示すフローチャートである。 接合層と樹脂との間の接合強度と、接合層の空隙率との関係を示す模式図である。 トランスファー成形後の第１接合層を拡大した模式図である。 トランスファー成形後の第１接合層を拡大した模式図である。 実施の形態１に係る電力用半導体装置の要部の別構成を示す平面図である。 実施の形態２に係る電力用半導体装置の要部の構成を示す平面図である。 図８のＡ−Ａ線の断面図である。
＜実施の形態１＞
図１は、本発明の実施の形態１による、トランスファーモールド型の電力用半導体装置１０１の要部の構成を示す平面図であり、図２は、図１のＡ−Ａ線に沿った断面図である。なお、説明を明瞭にするために、図１及び図２では、ワイヤー等の配線部材の図示は省略し、図１では、電力用半導体装置１０１のいくつかの構成要素を封止する樹脂５の図示は省略している。
図１に示すように、電力用半導体装置１０１は、配線部材１と、半導体素子２と、配線部材１と半導体素子２とを接合する接合層３と、樹脂５とを備える。樹脂５は、配線部材１の裏面（半導体素子２が搭載された面と逆側の面）が露出するように、配線部材１、半導体素子２、及び、接合層３を覆っており、トランスファー成形の構造が取られている。
配線部材１は、例えば、電気導電性と熱伝導性に優れた銅（Ｃｕ）、銅合金、または、アルミニウム（Ａｌ）等の金属の矩形状ブロックである。なお、配線部材１は、ブロックに限るものではなく、実際には様々な形態のものが適用できる。例えば、配線部材１は、リードフレームと称される板材、または、絶縁性を有するセラミックの基材に金属配線パターンが設けられたセラミック絶縁基板などであってもよい。
半導体素子２は、例えば、ＭＯＳＦＥＴ(Metal Oxide Semiconductor Field-Effect Transistor)、ＳＢＤ（Schottky Barrier diode）、または、ＩＧＢＴ（insulated gate bipolar transistor）などの電力用半導体素子を含む。また、半導体素子２は、材質が珪素（Ｓｉ）やワイドバンドギャップ半導体材料としての炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドなどを含む。
本実施の形態１では、スイッチング素子としてＳｉのＩＧＢＴを半導体素子２に用いた。例えば、半導体素子２は、厚み０．１〜０．４ｍｍ程度であり、半導体素子２の主面２１は矩形状を有する。半導体素子２の裏面２２にはコレクタ電極（図示せず）が設けられ、主面２１には主電力電極であるエミッタ電極（図示せず）と、制御電極であるゲート電極とが設けられる。主面２１側には配線部材等が接合されたり、配線部材１の下面側には冷却部材が設けられたりすることもある。さらに、半導体素子２を含む回路が設けられた面は、例えば樹脂５によって封止される。一般的に、トランスファーモールド型の電力用半導体装置では、樹脂５は熱硬化性樹脂である。
接合層３は、金（Ａｕ）、銀（Ａｇ）、銅（Ｃｕ）、または、ニッケル（Ｎｉ）などを含む。例えば、Ａｕ、Ａｇ、Ｃｕ、または、Ｎｉなどの骨材たる金属微粒子が有機成分（有機分散材）中に分散されてペースト状になった焼結性金属接合材料を用いて、接合層３は形成される。
焼結性金属接合材料に含まれるナノメーターレベルの金属微粒子は、比較的大きな表面積を有することによって比較的大きな表面エネルギーを有することから反応性が高くなっている。このため、焼結性金属接合材料では、その金属が、バルク状態の融点よりも低い温度で金属接合が拡散により進むという現象を利用することができる。ただし、金属微粒子のみでは、その反応性の高さから、常温でも接触するだけで焼結すなわち拡散接合が進行してしまう。このような金属微粒子が凝集して焼結反応が、意図せずに進行するのを抑制するため、焼結性金属接合材料は、金属微粒子の表面を覆う保護膜などの保護材をさらに含む。保護材は、例えば、個々の金属微粒子を独立した状態で分散保持するための有機分散材である。また、接合工程において焼結反応を生じさせるために、焼結性金属接合材料には、加熱により有機分散材と反応して金属微粒子を露出する分散材捕捉材、及び、有機分散材と分散材捕捉材との反応物質を捕捉して揮散する揮発性有機成分等が添加されている。なお、加熱に加えて加圧を行えば、金属微粒子同士の接合強度を向上させられるとともに、緻密な接合層３を得ることができる。
なお、本実施の形態１では、接合層３は、第１接合層３１ｓ及び第２接合層３１ｍを含む。第１接合層３１ｓは、樹脂５と隣接して設けられ、第２接合層３１ｍは、配線部材１、半導体素子２及び第１接合層３１ｓに囲まれて設けられている。そして、第１接合層３１ｓは樹脂５が充填された空隙を有しており、第２接合層３１ｍの空隙率は、第１接合層３１ｓの空隙率よりも小さくなっている。なお、空隙率は、第１接合層３１ｓまたは第２接合層３１ｍと空隙とがなす単位体積当たりの空隙の体積に相当する。
次に、本実施の形態１による電力用半導体装置１０１の製造方法について説明する。図３は、本実施の形態１による電力用半導体装置１０１の主な製造工程を示すフローチャートであり、配線部材１と半導体素子２とを接合する接合層３の製造工程と、それら一体品をトランスファー成形する工程とを示す。なお、説明を明瞭にするために、図３では、半導体素子２への配線工程などの図示は省略している。
まずステップＳ１の接合材塗布工程にて、例えばスクリーン印刷法により、配線部材１上に焼結性金属接合材料を塗布する。焼結性金属接合材料を塗布する印刷には、印刷マスクとスキージとが用いられ、ペースト状の焼結性金属接合材料を印刷マスクの表面に供給し、ペーストを掻き取ることによりペーストを配線部材１上に塗布する。
ここで、部分的に塗布量を調整してペーストの空隙率を制御したり、後述の接合条件を調整したりすることで、接合後の接合層３中の空隙率を制御することができる。本実施の形態１では、空隙率が小さい第２接合層３１ｍと相対的に空隙率が大きい第１接合層３１ｓとを、それぞれの所望の領域に形成する。このように接合層３に空隙を含ませることによって、はんだ材等の接合材に比べて高価な焼結性金属粒子を含む焼結性金属接合材料の使用量を減らすことができる。なお、焼結性金属接合材料の使用量を減らす方法として、塗布面積を減らしたり、塗布領域全域にわたって塗布厚さを低減したりする方法があるが、これらの方法は、放熱性能の低下、電気抵抗の増加、及び、信頼性の低下を招くため好ましくない。
続いて、ステップＳ２のマウント工程にて、配線部材１上に塗布された焼結性金属接合材料上の適正な位置に半導体素子２を搭載する。
ステップＳ３の加圧接合工程にて、これまでの工程で形成された構造体を適切な温度（例えば、温度８０℃、処理時間３０分）に加熱して乾燥することにより、焼結性金属接合材料の有機溶媒成分を除去する。その後、半導体素子２を押下して焼結性金属接合材料を加圧しながら、接合に必要な温度（例えば、温度２００℃〜３５０℃、処理時間３０分）に上記構造体を加熱した状態で当該構造体を加圧（例えば、１０ＭＰａ）する。これにより、焼結性金属接合材料は、配線部材１の接合面と、半導体素子２の接合面と、金属微粒子同士とを焼結接合する。このようにして、空隙率が大きい第１接合層３１ｓと空隙率が小さい第２接合層３１ｍとを含む接合層３が形成される。
最後に、ステップＳ４のトランスファー成形工程にて、配線部材１と半導体素子２とが接合層３によって接合された一体品を、配線部材１の裏面を除いて樹脂５で覆い、電力用半導体装置１０１が完成する。この際、第１接合層３１ｓの空隙に樹脂５が充填される。
完成した電力用半導体装置１０１では、動作時に温度の上昇及び下降が繰り返される。そのため、金属焼結体と樹脂との界面には線膨係数の差に起因して、せん断力が発生する。この力が、金属焼結体と樹脂との接着強度を超えると金属焼結体から樹脂が剥離する。
これに対して本実施の形態１では、トランスファー成形時に、空隙率が大きい第１接合層３１ｓの空隙に樹脂５が充填される。このような構成によれば、アンカー効果により第１接合層３１ｓの金属焼結体と樹脂との接着強度を向上させることができ、金属焼結体からの樹脂５の剥離を抑制することができる。また、従来から存在する工程（トランスファー成形）で樹脂５を充填するため、工数の増加がなく、コストアップを抑制できる。
なお、半導体素子２の外周部直下に比べて、半導体素子２の中央部直下では、接合層３の空隙に樹脂５を充填しにくい。このため、空隙率が大きい第１接合層３１ｓは、半導体素子２の外周部直下に設けることが望ましい。また、空隙率が大きい第１接合層３１ｓは、空隙率が小さい第２接合層３１ｍに比べて熱伝導率が低く、半導体素子２の熱を配線部材１に放熱する能力が小さい。一方、半導体素子２は動作時に発熱し、半導体素子２の中央部付近の温度はその外周部付近の温度に比べて上がりやすい。そのため、放熱性の観点から、本実施の形態１のように、第１接合層３１ｓを半導体素子２の外周部に設け、第２接合層３１ｍを半導体素子２の中央部に設けることが望ましい。このように、接合層３の空隙率を制御することで、半導体素子２と配線部材１との間の放熱性を維持しながら、耐熱性に優れた信頼性の高い電力用半導体装置を得ることができる。
次に、接合層３の空隙率について説明する。図４は、接合層３と樹脂４との間の接合強度と、接合層３の空隙率との関係を示す模式図である。
接合層３の空隙率が５％よりも小さい範囲ａにある場合、樹脂５は接合層３に入り込みにくくなり、上述したアンカー効果を十分に得ることができず、接合層３と樹脂５との接着強度を十分に向上させることができない。一方、接合層３の空隙率が２０％よりも大きい範囲ｃにある場合、接合層３自体の強度が不足し、電力用半導体装置１０１の動作時に接合層３内部で亀裂が進展するため、信頼性が低くなる。そこで本実施の形態１では、接合層３と樹脂５との接着強度を向上させ、かつ電力用半導体装置１０１の信頼性を向上させるために、接合層３に含まれる第１接合層３１ｓの空隙率が５％以上２０％以下の適正範囲ｂに制御されている。
次に、樹脂５に含まれるフィラー５ｆのサイズと、第１接合層３１ｓの空隙３１ｓｈのサイズとの関係について説明する。図５及び図６は、トランスファー成形後の第１接合層３１ｓを拡大した模式図である。具体的には、図５は、フィラー５ｆの最大幅が、第１接合層３１ｓの空隙３１ｓｈの最大幅である最大径よりも大きい状態を示す図であり、図６は、フィラー５ｆの最大幅が、第１接合層３１ｓの空隙３１ｓｈの最大幅である最大径以下であると仮定した状態を示す図である。
図５の場合、フィラー５ｆが空隙３１ｓｈに完全に入り込まないので、第１接合層３１ｓに樹脂５を充填することができる。よって、第１接合層３１ｓに対する樹脂５のアンカー効果を十分に得ることができ、第１接合層３１ｓと樹脂５との接着強度を向上させることができる。一方、図６の場合、フィラー５ｆが空隙３１ｓｈに完全に入り込んでいるので、空隙３１ｓｈとフィラー５ｆの隙間とに樹脂５を充填することができない。これは、樹脂５は高粘度のため、空隙３１ｓｈに樹脂５が充填されるためには一定のサイズ以上の隙間が必要であるためである。この結果図６の場合には、第１接合層３１ｓに対する樹脂５のアンカー効果を十分に得ることができず、第１接合層３１ｓと樹脂５との接着強度を十分に向上させることができない。
そこで本実施の形態１では、樹脂５に含まれるフィラー５ｆの最大幅は、第１接合層３１ｓの空隙３１ｓｈの最小径よりも大きくなっている。このような構成によれば、１以上の空隙３１ｓｈにおいて、図５の状態、つまりアンカー効果が得られる状態を実現することができる。
＜実施の形態１のまとめ＞
以上のように、本実施の形態１における電力用半導体装置１０１では、半導体素子２と配線部材１とを接合する接合層３を備え、接合層３は、樹脂５が充填された空隙３１ｓｈを有する第１接合層３１ｓを含み、樹脂５に含まれるフィラー５ｆの最大幅は、第１接合層３１ｓの空隙３１ｓｈの最小径よりも大きい。このような構成によれば、第１接合層３１ｓに対する樹脂５のアンカー効果を高めることができるので、コストアップを抑制しつつ、接合層３と樹脂５との接着強度を向上させることができる。したがって、耐熱性及び信頼性に優れたトランスファーモールド型の電力用半導体装置１０１を低コストで得ることができる。
なお以上の説明では、樹脂５に含まれるフィラー５ｆの最大幅が、第１接合層３１ｓの空隙３１ｓｈの最小径よりも大きい構成について説明した。しかしこれに限るものではなく、樹脂５に含まれるフィラー５ｆの最大幅が、第１接合層３１ｓの空隙３１ｓｈの最大径よりも大きくてもよい。このような構成によれば、一部の空隙３１ｓｈにおいてではなく、全ての空隙３１ｓｈにおいて、図５の状態、つまりアンカー効果が得られる状態を実現することができる。
また以上の説明では、図１に示すように１つの配線部材１に１つの半導体素子２を接合する構成について説明したが、これに限るものではない。例えば、図７に示すように、１つの配線部材１に複数の半導体素子２を接合する構成であってもよい。この構成は、各半導体素子２を接合する接合材料を一括で塗布し、各半導体素子２を一括で加圧接合することができるので、生産性の観点から望ましい。
＜実施の形態２＞
図８は、本発明の実施の形態２による、トランスファーモールド型の電力用半導体装置１０１の要部の構成を示す平面図であり、図９は、図８のＡ−Ａ線に沿った断面図である。以下、本実施の形態２に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
実施の形態１では、図１に示すように金属焼結体である接合層３は、半導体素子２の直下のみに設けられた。これに対して本実施の形態２では、接合層３は、半導体素子２の直下だけでなく、半導体素子２の周囲にも設けられている。つまり、第１接合層３１ｓは、配線部材１と半導体素子２との間、及び、平面視における半導体素子２の外側に設けられている。
＜実施の形態２のまとめ＞
以上のような本実施の形態２によれば、実施の形態１に比べて第１接合層３１ｓと樹脂５のとの接触面積を大きくすることができる。したがって、樹脂５が充填された空隙を有する第１接合層３１ｓの体積を増加させることができ、接合層３と樹脂５との接着強度をより高めることができる。
なお、本発明は、その発明の範囲内において、各実施の形態及び各変形例を自由に組み合わせたり、各実施の形態及び各変形例を適宜、変形、省略したりすることが可能である。
１ 配線部材、２ 半導体素子、３ 接合層、５ 樹脂、５ｆ フィラー、３１ｓ 第１接合層、３１ｓｈ 空隙、３１ｍ 第２接合層、１０１ 電力用半導体装置。

Claims (7)

  1. 配線部材と、
    半導体素子と、
    前記配線部材と前記半導体素子とを接合し、焼結金属体からなる接合層と、
    前記配線部材、前記半導体素子、及び、前記接合層を覆う樹脂と
    を備え、
    前記接合層は、
    前記樹脂と隣接して設けられ、前記樹脂が充填された複数の空隙を有する第１接合層を含み、
    前記樹脂に含まれる複数のフィラーの幅のうちの最大幅は、前記第１接合層の前記複数の空隙の径のうちの最小径よりも大きく、
    前記樹脂は、前記フィラーが入り込んだ前記空隙よりも前記フィラーが入り込んでいない前記空隙に充填され易い、電力用半導体装置。
  2. 請求項１に記載の電力用半導体装置であって、
    前記接合層は、
    前記配線部材、前記半導体素子及び前記第１接合層に囲まれて設けられ、前記第１接合層よりも空隙率が小さい第２接合層をさらに含む、電力用半導体装置。
  3. 請求項１または請求項２に記載の電力用半導体装置であって、
    前記第１接合層は、
    前記配線部材と前記半導体素子との間、及び、平面視における前記半導体素子の外側に設けられている、電力用半導体装置。
  4. 請求項１から請求項３のうちのいずれか１項に記載の電力用半導体装置であって、
    前記第１接合層の空隙率は、５％以上２０％以下である、電力用半導体装置。
  5. 請求項１から請求項４のうちのいずれか１項に記載の電力用半導体装置であって、
    前記接合層は、銀、金、銅、または、ニッケルを含む、電力用半導体装置。
  6. 請求項１から請求項５のうちのいずれか１項に記載の電力用半導体装置であって、
    前記樹脂は、熱硬化性樹脂である、電力用半導体装置。
  7. 請求項１から請求項６のうちのいずれか１項に記載の電力用半導体装置であって、
    前記樹脂に含まれる複数のフィラーの幅のうちの最大幅は、前記第１接合層の前記複数の空隙の径のうちの最大径よりも大きい、電力用半導体装置。
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