CN108559602B - Water-based diamond wire silicon wafer cutting fluid - Google Patents
Water-based diamond wire silicon wafer cutting fluid Download PDFInfo
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- CN108559602B CN108559602B CN201810348958.8A CN201810348958A CN108559602B CN 108559602 B CN108559602 B CN 108559602B CN 201810348958 A CN201810348958 A CN 201810348958A CN 108559602 B CN108559602 B CN 108559602B
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/28—Esters
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
- C10M2219/04—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions containing sulfur-to-oxygen bonds, i.e. sulfones, sulfoxides
- C10M2219/044—Sulfonic acids, Derivatives thereof, e.g. neutral salts
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
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Abstract
The invention belongs to the technical field of silicon crystal cutting in the photovoltaic industry, and particularly relates to a water-based diamond wire silicon wafer cutting fluid. The components of the water-based diamond wire silicon wafer cutting fluid comprise fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate, sodium xylene sulfonate, decyne glycol polyoxyethylene ether and deionized water.
Description
Technical Field
The invention belongs to the technical field of silicon crystal cutting in the photovoltaic industry, and particularly relates to a water-based diamond wire silicon wafer cutting fluid.
Background
With the change of global energy demand, clean and environment-friendly energy becomes a popular research topic. Solar energy is both a primary energy source and a renewable energy source. It has rich resource, can be used freely, does not need transportation, and has no pollution to the environment. Creates a new life form for human beings, and enables the society and the human beings to enter an era of saving energy and reducing pollution. Photovoltaic semiconductor silicon wafers have been produced as a solar pillar industry, and the demand for silicon wafers has rapidly increased. Slicing is an important process for processing the silicon wafer, and is also one of the main processes causing stress, surface layer and subsurface layer damage and edge breakage of the silicon wafer, and the yield of silicon wafer cutting directly determines the capacity of the photovoltaic industry. The performance of the cutting fluid is one of the key factors influencing the cutting efficiency and quality of the silicon wafer.
The existing silicon wafer cutting process mainly adopts free mortar cutting suspension and diamond wire cutting, while diamond wire cutting is a more novel cutting process, and China is still in a starting stage at present. The process mainly utilizes the friction between the diamond plated on the outer layer of the sand line and the silicon wafer to cut, the cutting fluid does not need to suspend silicon carbide particles and has higher viscosity, silicon carbide blade materials do not need to be mixed in the solution, the cutting speed is 2-3 times of that of a steel wire in the mortar cutting process, the sheet yield is higher than that of a mortar cutting mode, the consumed water and electricity are reduced by two thirds than that of the mortar cutting technology, and the silicon powder generated after cutting can be completely recycled, so that the depreciation, labor and energy cost of unit yield can be greatly reduced, and the process is energy-saving and environment-friendly.
Patent CN102321497A discloses a solar silicon wafer cutting fluid, which comprises polyethylene glycol, a surfactant, a lubricant, a penetrating agent and a chelating agent, and also comprises an organic compound with sulfur-oxygen double bonds. Although the patent has better performance, the patent belongs to the traditional free mortar cutting suspension, and the series of suspensions are in the elimination technology at present.
The 105695076A and 105713714A belong to the same series of products, and surfactants such as alkylphenol ethoxylates which are prohibited by the nation are frequently used. Although the use of the styrene-butadiene rubber accelerates the agglomeration of silicon powder, the large-particle silicon powder is stuck on a diamond wire, so that the yield of silicon wafer cutting is reduced.
The surface of a silicon wafer cut by the current commercially available silicon wafer cutting fluid has large TTV and linear marks, and the roughness and warping degree of the surface of the silicon wafer are influenced because the silicon wafer is subjected to brittle fracture or scratch in the cutting process, so that the total thickness of the processed silicon wafer has errors.
The service life of the diamond wire is short, the quality of the additives used by a plurality of silicon wafer cutting fluids is poor, and the cutting fluid is not beneficial to cleaning after cutting, so that the service life of the diamond wire is shortened.
During the cutting process of the silicon wafer, the cutting silicon powder can release hydrogen due to the reaction of water and the too fine particle size, and the potential safety hazard can be generated due to long-time production accumulation.
Compared with the traditional mortar suspension cutting process and the diamond sand wire cutting process, the friction force generated by the friction between the diamond plated on the outer layer of the sand wire and the silicon wafer is far higher than that of the mortar suspension, instant stronger high temperature is generated during cutting, the cooling effect is reduced, and the silicon powder settlement is poor, so that solid silicon fine powder which is difficult to clean can exist on the surface of the cut silicon wafer, and the smoothness of a product is reduced, and the yield is low.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: on the premise that the traditional mortar suspension cutting fluid is eliminated, the cutting fluid for cutting the silicon wafer by using the diamond sand wire is provided, and the technical problems of low cutting speed, poor silicon powder settleability and low silicon wafer yield are solved.
In order to solve the technical problems, the invention adopts the technical scheme that: the water-based diamond wire silicon wafer cutting fluid comprises fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate, sodium xylene sulfonate, decynediol polyoxyethylene ether and deionized water.
Specifically, the water-based diamond wire silicon wafer cutting fluid comprises the following components in parts by weight: 5-10 parts of fatty acid methyl ester, 8-15 parts of polyethylene glycol 400 monolaurate, 5-10 parts of di-sec-octyl maleate sodium sulfonate, 2-5 parts of polyoxyethylene sorbitan monooleate, 0.1-1 part of sodium xylene sulfonate, 1-5 parts of decyne glycol polyoxyethylene ether and 60-80 parts of deionized water.
Furthermore, the water-based diamond wire silicon wafer cutting fluid preferably comprises the following components in parts by weight: 8 parts of fatty acid methyl ester, 10 parts of polyethylene glycol 400 monolaurate, 5 parts of di-sec-octyl maleate sodium sulfonate, 4 parts of polyoxyethylene sorbitan monooleate, 0.5 part of sodium xylene sulfonate, 2.5 parts of decyne glycol polyoxyethylene ether and 70 parts of deionized water.
Wherein, the fatty acid methyl ester has excellent wear resistance and thermal stability, the wear resistance index WS1.4 is less than or equal to 300 μm (60 ℃), which shows that the friction force can be obviously reduced under the condition of high-temperature friction, and the lubricating oil has good friction reducing, wear resisting and lubricating properties. The polyethylene glycol 400 monolaurate has the performances of emulsification, lubrication, defoaming and solubilization, and particularly can tightly lock the fatty acid methyl ester to avoid layering, ensure the dehydration of the fatty acid methyl ester and promote the stability of a system. The di-sec-octyl maleate sodium sulfonate and the polyoxyethylene sorbitan monooleate have strong wettability, can quickly permeate into the contact surface of the diamond wire and the silicon wafer, can lock other hydrophilic and oleophilic groups of a system, can be directionally arranged on the surface of the solution, accelerate the cutting speed and take away a large amount of heat. The sodium xylene sulfonate has the functions of sterilization, hydrotropy, homogenization, dispersion and the like, reduces the cloud point and viscosity, greatly improves the cooling effect of the cutting fluid, and has the function of sharpening carborundum to improve the cutting efficiency. The decyne glycol polyoxyethylene ether has a unique bimolecular structure, is suitable for the foam-inhibiting wetting agent of a water-based system, greatly improves the static and dynamic surface tension of the system of the invention on the dynamic wetting capacity of various silicon wafers and diamond wires, promotes the flow leveling, and reduces the scratch of silicon wafers by silicon powder. The silicon powder sedimentation speed of the system can be improved, the silicon powder generated in the cutting process can be quickly taken away, the silicon powder and the cutting liquid are quickly separated from each other in a solid-liquid manner, and the performance of the system is ensured not to fluctuate for a long time.
The invention also provides a preparation method of the water-based diamond wire silicon wafer cutting fluid, which comprises the following steps: adding fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate and decyne glycol polyoxyethylene ether into a stirring tank, uniformly stirring, slowly adding deionized water while stirring to obtain a transparent emulsion, and finally adding sodium xylene sulfonate and uniformly stirring to obtain the water-based diamond wire silicon wafer cutting fluid.
The invention has the beneficial effects that: the water-based diamond wire silicon wafer cutting fluid has excellent lubricating, cooling and silicon powder settling effects, and through organic combination of the raw materials in the formula, the silicon wafer cutting speed is high, the silicon wafer yield is high, silicon powder residue on the surface of the silicon wafer is less, and the diamond wire abrasion is small. The preparation method of the water-based diamond wire silicon wafer cutting fluid is simple in process, easy to control conditions, low in cost, low in equipment requirement and suitable for industrial production.
Detailed Description
Example 1
The water-based diamond wire silicon wafer cutting fluid comprises the following components in parts by weight: 8 parts of fatty acid methyl ester, 10 parts of polyethylene glycol 400 monolaurate, 5 parts of di-sec-octyl maleate sodium sulfonate, 4 parts of polyoxyethylene sorbitan monooleate, 0.5 part of sodium xylene sulfonate, 2.5 parts of decyne glycol polyoxyethylene ether and 70 parts of deionized water.
The preparation method of the aqueous diamond wire silicon wafer cutting fluid in the embodiment comprises the following steps:
adding fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate and decyne glycol polyoxyethylene ether into a stirring tank, uniformly stirring, slowly adding deionized water while stirring to obtain a semitransparent emulsion, and finally adding sodium xylene sulfonate and uniformly stirring to obtain the water-based diamond wire silicon wafer cutting fluid.
Example 2
The water-based diamond wire silicon wafer cutting fluid comprises the following components in parts by weight:
10 parts of fatty acid methyl ester, 8 parts of polyethylene glycol 400 monolaurate, 5 parts of di-sec-octyl maleate sodium sulfonate, 5 parts of polyoxyethylene sorbitan monooleate, 1 part of sodium xylene sulfonate, 5 parts of decyne glycol polyoxyethylene ether and 66 parts of deionized water.
The preparation method of the aqueous diamond wire silicon wafer cutting fluid in the embodiment comprises the following steps:
adding fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate and decyne glycol polyoxyethylene ether into a stirring tank, uniformly stirring, slowly adding deionized water while stirring to obtain a semitransparent emulsion, and finally adding sodium xylene sulfonate and uniformly stirring to obtain the water-based diamond wire silicon wafer cutting fluid.
Example 3
5 parts of fatty acid methyl ester, 15 parts of polyethylene glycol 400 monolaurate, 10 parts of di-sec-octyl maleate sodium sulfonate, 2 parts of polyoxyethylene sorbitan monooleate, 0.1 part of sodium xylene sulfonate, 1 part of decyne glycol polyoxyethylene ether and 66.9 parts of deionized water.
The preparation method of the aqueous diamond wire silicon wafer cutting fluid in the embodiment comprises the following steps:
adding fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate and decyne glycol polyoxyethylene ether into a stirring tank, uniformly stirring, slowly adding deionized water while stirring to obtain a semitransparent emulsion, and finally adding sodium xylene sulfonate and uniformly stirring to obtain the water-based diamond wire silicon wafer cutting fluid.
The cutting fluid of each embodiment is diluted by deionized water by 400 times, and then the silicon rods with the same specification are subjected to diamond sand wire cutting, meanwhile, the U.S. imported UDML200C solar silicon wafer cutting fluid (mark A) is also diluted by deionized water by 400 times, and then the silicon rods with the same specification are subjected to diamond sand wire cutting, and the silicon rods with the same specification are subjected to traditional mortar suspension cutting by adopting mortar suspension cutting fluid (mark B) produced by Liaoning Oaks chemical Co. The results of the relevant experiments are shown in table 1:
TABLE 1 cutting data test table for inventive example and comparative example
The table 1 shows that the embodiments of the invention are superior to the traditional mortar suspension cutting fluid in all aspects, and all performance indexes are equivalent to those of the imported diamond wire cutting fluid.
Finally, it should be noted that the above-mentioned embodiments are only preferred technical solutions of the present invention, and should not be considered as limitations of the present invention, and features in the embodiments and examples in the present application may be arbitrarily combined with each other without conflict. The protection scope of the present invention is defined by the claims, and includes equivalents of technical features of the claims. I.e., equivalent alterations and modifications within the scope hereof, are also intended to be within the scope of the invention.
Claims (3)
1. The water-based diamond wire silicon wafer cutting fluid is characterized by comprising the following components in parts by weight: the components of the water-based diamond wire silicon wafer cutting fluid comprise fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate, sodium xylene sulfonate, decyne glycol polyoxyethylene ether and deionized water;
the water-based diamond wire silicon wafer cutting fluid comprises the following components in parts by weight: 5-10 parts of fatty acid methyl ester, 8-15 parts of polyethylene glycol 400 monolaurate, 5-10 parts of di-sec-octyl maleate sodium sulfonate, 2-5 parts of polyoxyethylene sorbitan monooleate, 0.1-1 part of sodium xylene sulfonate, 1-5 parts of decyne glycol polyoxyethylene ether and 60-80 parts of deionized water.
2. The aqueous diamond wire silicon wafer cutting fluid according to claim 1, characterized in that: the water-based diamond wire silicon wafer cutting fluid comprises the following components in parts by weight: 8 parts of fatty acid methyl ester, 10 parts of polyethylene glycol 400 monolaurate, 5 parts of di-sec-octyl maleate sodium sulfonate, 4 parts of polyoxyethylene sorbitan monooleate, 0.5 part of sodium xylene sulfonate, 2.5 parts of decyne glycol polyoxyethylene ether and 70 parts of deionized water.
3. The method for preparing the aqueous diamond wire silicon wafer cutting fluid according to claim 1 or 2, characterized in that: the preparation method comprises the following steps: adding fatty acid methyl ester, polyethylene glycol 400 monolaurate, di-sec-octyl maleate sodium sulfonate, polyoxyethylene sorbitan monooleate and decyne glycol polyoxyethylene ether into a stirring tank, uniformly stirring, slowly adding deionized water while stirring to obtain a transparent emulsion, and finally adding sodium xylene sulfonate and uniformly stirring to obtain the water-based diamond wire silicon wafer cutting fluid.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109370760A (en) * | 2018-11-09 | 2019-02-22 | 上海都昱新材料科技有限公司 | High lubrication highly diluted multiplying power Buddha's warrior attendant wire cutting liquid and preparation method thereof |
| CN111254002B (en) * | 2018-11-30 | 2022-07-12 | 洛阳阿特斯光伏科技有限公司 | Cooling liquid used in cutting process and preparation method and application thereof |
| CN110791363B (en) * | 2019-09-27 | 2022-05-27 | 佳化化学(上海)有限公司 | Fully synthetic cutting fluid and preparation method thereof |
| CN113136255A (en) * | 2020-01-16 | 2021-07-20 | 天津赫普菲乐新材料有限公司 | Cooling liquid for diamond wire cutting solar silicon wafer and preparation method |
| CN111635809B (en) * | 2020-06-16 | 2022-10-28 | 西安思凯石化科技有限公司 | Water-soluble metal multi-wire cutting fluid |
| CN113430041A (en) * | 2021-06-28 | 2021-09-24 | 广州亦盛环保科技有限公司 | Water-based semiconductor wafer cutting fluid and preparation method thereof |
| CN113736550A (en) * | 2021-09-02 | 2021-12-03 | 江苏捷捷半导体新材料有限公司 | Diamond wire cutting fluid for circulating system of slicing equipment and preparation method of diamond wire cutting fluid |
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