CN107946436B - A kind of White-light LED package structure - Google Patents
A kind of White-light LED package structure Download PDFInfo
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- CN107946436B CN107946436B CN201711210772.8A CN201711210772A CN107946436B CN 107946436 B CN107946436 B CN 107946436B CN 201711210772 A CN201711210772 A CN 201711210772A CN 107946436 B CN107946436 B CN 107946436B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 154
- 239000000741 silica gel Substances 0.000 claims abstract description 148
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000843 powder Substances 0.000 claims abstract description 32
- 230000017525 heat dissipation Effects 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 42
- 241000217776 Holocentridae Species 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of White-light LED package structure, which includes: heat-radiating substrate 21；LED lamp is set to 21 upper surface of heat-radiating substrate；Lower layer's silica gel 22 is set to the LED lamp upper surface；Semispherical silicon glueballs 23 is set to 22 upper surface of lower layer's silica gel；Upper layer silica gel 24 is set to lower layer's silica gel 22 and 23 upper surface of semispherical silicon glueballs.White-light LED package structure of the invention solves the problems, such as that high temperature causes fluorescent powder quantum efficiency to decline by separating fluorescent powder with LED lamp.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a white light LED packaging structure.
Background
The LED has the characteristics of long service life, high luminous efficiency, good color rendering property, safety, reliability, rich colors and easy maintenance. Under the background of today's increasingly serious environmental pollution, climate warming and energy shortage, semiconductor lighting technology developed based on high-power LEDs has been recognized as one of the most promising high-tech fields in the 21 st century. This is a major leap in the history of human lighting since gas lighting, incandescent lamps and fluorescent lamps, and has rapidly improved the lighting quality of human life.
In recent years, the LED mostly adopts a GaN-based blue light wick plus yellow fluorescence to generate white light to realize illumination, and this method has the following problems. Firstly, light emitted by an LED light source is generally distributed in a divergent mode, namely Lambert distribution, so that the illumination brightness of the light source is not concentrated enough, and secondary shaping is generally needed through an external lens to meet the illumination requirement of a specific occasion, so that the production cost is increased; secondly, in the current high-power white light LED packaging structure, fluorescent powder is generally directly coated on the surface of a chip, and the chip has an absorption effect on back-scattered light, so that the light extraction efficiency of the packaging is reduced by the direct coating method, and in addition, the quantum efficiency of the fluorescent powder is obviously reduced by the high temperature generated by the chip, so that the lumen efficiency of the packaging is seriously influenced; thirdly, only a part of energy in the input power of the LED is converted into light energy, and the rest of energy is converted into heat energy, so that how to control the energy of the LED chip, especially the LED chip with high power density, is an important problem to be solved emphatically in LED manufacturing and lamp; then, because the high-power LED is used in occasions such as illumination, the cost control is very important, the structural size of the external heat sink of the high-power LED lamp is not allowed to be too large, active heat dissipation in modes such as a power-on fan and the like cannot be allowed, the safe junction temperature of the LED chip in operation is within 110 ℃, if the junction temperature is too high, a series of problems such as light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, chip accelerated aging and the like can be caused, the service life of the LED is greatly reduced, and meanwhile, the accelerated aging of the packaging adhesive colloid filled on the chip can be caused, and the light transmission efficiency of the LED is influenced; finally, most of the chips are packaged on a thin metal heat dissipation substrate, and the metal heat dissipation substrate is thin, has small heat capacity and is easy to deform, so that the contact between the metal heat dissipation substrate and the bottom surface of the heat dissipation plate is not tight enough, and the heat dissipation effect is affected.
Disclosure of Invention
Therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides a white light LED packaging structure.
Specifically, an embodiment of the present invention provides a white LED package structure, including:
a heat dissipation substrate 21;
the LED lamp core is arranged on the upper surface of the heat dissipation substrate 21;
the lower layer of silica gel 22 is arranged on the upper surface of the LED lamp wick;
the hemispherical silica gel balls 23 are arranged on the upper surface of the lower layer silica gel 22;
and the upper layer of silica gel 24 is arranged on the upper surfaces of the lower layer of silica gel 22 and the hemispherical silica gel ball 23.
In an embodiment of the invention, the heat dissipation substrate 21 is made of copper, and has a thickness of 0.5-10 mm.
In one embodiment of the present invention, a plurality of circular through holes are disposed inside the heat dissipation substrate 21 along the width direction of the heat dissipation substrate 21 and parallel to the plane of the heat dissipation substrate 21; wherein,
the diameter of the circular through holes is 0.2-0.4 mm, the distance between the circular through holes is 0.5-10 mm, and the circular through holes are directly cast or drilled on the heat dissipation substrate.
In one embodiment of the invention, the LED lamp wick is a GaN-based blue light chip.
In one embodiment of the present invention, the GaN-based blue light chip includes: the GaN buffer layer, the N-type GaN layer, the P-type GaN quantum well wide band gap material, the InGaN layer, the P-type GaN quantum well wide band gap material, the AlGaN barrier layer material and the P-type GaN layer are sequentially arranged on the substrate material.
In one embodiment of the invention, the radius of the hemispherical silica gel balls 23 is greater than 10 micrometers, and the distance between the hemispherical silica gel balls (23) is 5-10 micrometers.
In one embodiment of the present invention, the upper layer of silicone 24 is a semicircular silicone layer.
In an embodiment of the present invention, at least one of the hemispherical silica gel spheres 23 and the upper silica gel layer 24 contains yellow phosphor.
In one embodiment of the invention, the fluorescent wavelength of the yellow fluorescent powder is 570 nm-620 nm.
In an embodiment of the present invention, the refractive index of the material of the hemispherical silica gel ball 23 is greater than the refractive index of the lower silica gel layer 22 and greater than the refractive index of the upper silica gel layer 24.
The embodiment of the invention has the following advantages:
1. the fluorescent powder and the LED chip in the white light LED packaging structure are separated, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused under the high-temperature condition is solved.
2. The silica gel layer contains fluorescent powder, so that part of light rays is changed into yellow light in the secondary adjustment process.
3. By changing the content of the yellow fluorescent powder in the upper layer of silica gel, the color of light can be continuously adjusted to change from white light to yellow light, and the color temperature of a light source can be adjusted.
4. The silica gel contacted with the LED lamp wick is high-temperature resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
5. The refractive index of the lower layer silica gel of the white light LED packaging structure prepared by the invention is smaller than that of the upper layer silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower layer silica gel and larger than that of the upper layer silica gel.
6. The invention adopts the mode of the middle through hole, and reduces the cost of the copper material while the strength is almost unchanged; the mode of middle through-hole is adopted, the passageway of circulation of air can be increased, and the heat convection of utilization air has increased the radiating effect.
7. The hemispherical silica gel ball lens changes the propagation direction of light, can effectively inhibit the total reflection effect, and is beneficial to emitting more light to the outside of the LED, namely the external quantum efficiency of the LED device is increased, or the luminous efficiency of the LED is improved.
8. The thickness of the heat dissipation substrate is thick, so that the heat dissipation substrate is not easy to deform, heat dissipation is easy when additional heat dissipation equipment is added, and the phenomenon that the heat dissipation effect is poor due to the fact that the heat dissipation substrate is not attached to peripheral heat dissipation equipment due to deformation is avoided.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic view of a white LED package structure according to an embodiment of the present invention;
FIG. 2 is a flow chart of another white LED packaging method according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a GaN-based blue light chip according to an embodiment of the invention;
fig. 4 is a schematic structural diagram of a heat dissipation substrate according to an embodiment of the present invention;
fig. 5 is a schematic view of another white LED package structure according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Example one
Referring to fig. 1, fig. 1 is a schematic view of a white LED package structure according to an embodiment of the present invention.
The structure includes:
a heat dissipation substrate 21;
the LED lamp core is arranged on the upper surface of the heat dissipation substrate 21;
the lower layer of silica gel 22 is arranged on the upper surface of the LED lamp wick;
the hemispherical silica gel balls 23 are arranged on the upper surface of the lower layer silica gel 22;
and the upper layer of silica gel 24 is arranged on the upper surfaces of the lower layer of silica gel 22 and the hemispherical silica gel ball 23.
The heat dissipation substrate 21 is made of copper, and the thickness of the heat dissipation substrate is 0.5-10 mm.
Further, a plurality of circular through holes are formed in the heat dissipation substrate 21 along the width direction of the heat dissipation substrate 21 and parallel to the plane of the heat dissipation substrate 21.
Further, the diameter of the circular through holes is 0.2-0.4 mm, the distance between the circular through holes is 0.5-10 mm, and the circular through holes are directly formed by casting or directly formed by drilling on the heat dissipation substrate.
The LED lamp wick is a GaN-based blue light chip.
Further, the GaN-based blue light chip comprises: the GaN buffer layer, the N-type GaN layer, the P-type GaN quantum well wide band gap material, the InGaN layer, the P-type GaN quantum well wide band gap material, the AlGaN barrier layer material and the P-type GaN layer are sequentially arranged on the substrate material.
The radius of the hemispherical silica gel balls (23) is larger than 10 micrometers, and the distance between the hemispherical silica gel balls (23) is 5-10 micrometers.
Wherein, the upper layer silica gel 24 is a semicircular silica gel layer.
Further, at least one of the hemispherical silica gel ball 23 and the upper layer silica gel 24 contains yellow phosphor.
Furthermore, the fluorescent wavelength of the yellow fluorescent powder is 570 nm-620 nm.
Further, the refractive index of the hemispherical silica gel ball 23 material is greater than the refractive index of the lower silica gel layer 22 and greater than the refractive index of the upper silica gel layer 24.
The beneficial effects of the invention are as follows:
1. the fluorescent powder and the LED lamp wick are separated, so that the problem that the quantum efficiency of the fluorescent powder is reduced due to high temperature is solved.
2. The silica gel contains fluorescent powder, so that part of light rays are changed into yellow light in the secondary adjustment process, the color of the light can be continuously adjusted to be changed from white light to yellow light by changing the content of the yellow fluorescent powder in the upper layer of silica gel, and the color temperature of a light source can be adjusted.
3. The silica gel in contact with the LED lamp wick is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
4. The invention utilizes the characteristic that different types of silica gel have different refractive indexes to form the hemispherical silica gel ball in the silica gel, thereby improving the problem of light emission dispersion of the LED chip and enabling the light emitted by the light source to be more concentrated.
5. The refractive index of the lower layer silica gel of the white light LED packaging structure prepared by the invention is smaller than that of the upper layer silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower layer silica gel and larger than that of the upper layer silica gel.
6. The invention adopts the mode of the middle through hole, and reduces the cost of the copper material while the strength is almost unchanged; the mode of middle through-hole is adopted, the passageway of circulation of air can be increased, and the heat convection of utilization air has increased the radiating effect.
Example two
Referring to fig. 2 and fig. 3, fig. 2 is a flowchart of another white LED packaging method according to an embodiment of the present invention, and fig. 3 is a schematic structural diagram of a GaN-based blue light chip according to an embodiment of the present invention. On the basis of the above embodiments, the present embodiment will describe the process flow of the present invention in more detail. The method comprises the following steps:
s1 selection of LED lampwick
A GaN-based blue light chip is selected as an LED lamp wick, the structure of the GaN-based blue light chip is shown in figure 3, and the chip comprises: the GaN-based substrate comprises a substrate material 1, a GaN buffer layer 2, an N-type GaN layer 3, a P-type GaN quantum well wide band gap material 4, an InGaN layer 5, a P-type GaN quantum well wide band gap material 6, an AlGaN barrier layer material 7 and a P-type GaN layer 8.
S2, selecting a heat dissipation substrate
S21, support/heat sink substrate preparation
The method comprises the steps of selecting metal copper as a material of a heat dissipation substrate, wherein the thickness of the heat dissipation substrate is 0.5-10 mm. The heat dissipation substrate is internally provided with a circular through hole which is parallel to the plane of the heat dissipation substrate along the width direction; wherein the number of the circular through holes is n, n is more than or equal to 2, the diameter is 0.2-0.4 mm, and the distance between the circular through holes is 0.5-10 mm. The circular through-hole may be directly cast or drilled in the width direction on the copper heat-dissipating substrate. The area of the radiating substrate can be cut according to the requirement of the lamp.
S22, cleaning the support/heat dissipation substrate;
and cleaning stains, especially oil stains, of the support/heat dissipation substrate. When packaging, the support and the heat dissipation substrate must be kept clean.
S23, baking the support/heat dissipation substrate;
and baking the support/heat dissipation substrate to keep the support/heat dissipation substrate dry.
S3, welding LED lamp wicks
S31, printing solder
Printing solder on the LED lamp wick;
s32, die bonding inspection
Carrying out die bonding inspection on the LED lamp wick printed with the solder;
s33 reflow soldering
And the LED lamp wick is welded above the radiating substrate by using a reflow soldering process, and the welding adopts a standard reflow soldering process.
S4 growth on silica gel
S41, preparing lower layer silica gel;
s411, coating a first silica gel layer above a heat dissipation substrate provided with an LED lamp wick by using a coating mode, wherein the first silica gel layer is a high-temperature-resistant silica gel layer without fluorescent powder;
s412, baking the first silica gel layer at the baking temperature of 90-125 ℃ for 15-60 min, and curing the first silica gel layer to form the lower-layer silica gel.
S42, preparing a hemispherical silica gel ball;
s421, coating a silica gel ball material on the upper surface of the lower layer silica gel in a coating mode, wherein the silica gel ball material is yellow fluorescent powder; the silica gel ball material containing the yellow fluorescent powder is prepared by the following steps:
s4211, preparing fluorescent powder glue
Preparing yellow fluorescent powder according to the index requirements of specific LED lamps, wherein the yellow fluorescent powder can adopt (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu, M-alpha-SiAlON, Eu and other materials are prepared, and yellow fluorescent powder is mixed with silica gel ball materials;
s4212, color test
Carrying out color test on the mixed silica gel ball material to enable the fluorescence wavelength of the silica gel ball material to be 570-620 nm;
s4213, baking
And baking the silica gel ball material subjected to the color test.
S422, forming the silica gel ball on the silica gel ball material by utilizing the first hemispherical mold;
s423, baking the silica gel ball material provided with the first hemispherical mold at the baking temperature of 90-125 ℃ for 15-60 min to solidify the silica gel ball material;
s424, after baking is finished, removing the first hemispherical mold to form a hemispherical silica gel ball;
preferably, the hemispherical silica gel balls can be uniformly arranged in a rectangular shape or staggered;
s43, preparing upper layer silica gel.
S431, coating a second silica gel layer above the hemispherical silica gel ball and the lower silica gel layer in a coating mode, wherein the second silica gel layer contains yellow fluorescent powder; the second silica gel layer containing the yellow fluorescent powder is prepared by the following steps:
s4311 preparing fluorescent powder glue
Preparing yellow fluorescent powder according to the index requirements of specific LED lamps, wherein the yellow fluorescent powder can adopt (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu, M-alpha-SiAlON, Eu and other materials are configured, and the yellow fluorescent powder is mixed with the second silica gel layer;
s4312, color test
Carrying out color test on the mixed second silica gel layer to enable the fluorescence wavelength of the mixed second silica gel layer to be 570-620 nm;
s4313, baking
And baking the second silica gel layer after the color test.
S432, arranging a second hemispherical mold in the second silica gel layer, and forming second hemispherical silica gel in the second silica gel layer by using the second hemispherical mold;
s433, baking the second silica gel layer provided with the second hemispherical mold at 90-125 ℃ for 15-60 min to solidify the second silica gel layer with the second hemispherical mold;
s434, after baking, removing the second hemispherical mold arranged in the second silica gel layer to form upper silica gel;
s44, long-time baking;
baking the lower layer silica gel, the hemispherical silica gel lens and the upper layer silica gel at the baking temperature of 100-150 ℃ for 4-12 h to finish the packaging of the LED;
preferably, the refractive index of the lower silica gel is smaller than that of the upper silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower silica gel and larger than that of the upper silica gel.
S5 testing and sorting packaged LEDs
S6 white light LED packaging structure qualified in packaging test
EXAMPLE III
With continuing reference to fig. 1 and with reference to fig. 4 and 5, fig. 4 is a schematic structural diagram of a heat dissipation substrate according to an embodiment of the present invention; fig. 5 is a schematic view of another white LED package structure according to an embodiment of the present invention. In this embodiment, a white LED package structure is described in detail based on the above embodiments, and as shown in fig. 1, the white LED package structure includes: the LED lamp comprises a packaging radiating substrate 21 with an LED lamp wick, lower silica gel 22, a hemispherical silica gel ball 23 and upper silica gel 24. Wherein, the radius R of the hemispherical silica gel ball 23 is more than 10 microns; the distance L1 between the hemispherical silica gel ball 23 and the LED lamp wick is more than 10 microns; the distance between the hemispherical silica gel balls 23 is 5-10 microns, and the smaller the distance, the better the distance; the thickness D of the heat dissipation substrate 21 is 90-140 micrometers; the width W of the heat dissipating substrate 21 is greater than 5 mils (1mil — 1/45mm), or greater than 20 micrometers.
As shown in fig. 3, the LED wick is a GaN-based blue chip, and the chip includes: the GaN-based substrate comprises a substrate material 1, a GaN buffer layer 2, an N-type GaN layer 3, a P-type GaN quantum well wide band gap material 4, an InGaN layer 5, a P-type GaN quantum well wide band gap material 6, an AlGaN barrier layer material 7 and a P-type GaN layer 8.
As shown in FIG. 4, the heat dissipation substrate 21 is made of copper, and the thickness D of the heat dissipation substrate is 0.5-10 mm. The radiating substrate is internally provided with circular through holes which are parallel to the radiating substrate plane along the width W direction and vertical to the radiating substrate length L direction, the number of the circular through holes is n, n is more than or equal to 2, the diameter is 0.2-0.4 mm, and the distance L2 between the circular through holes is 0.5-10 mm. The circular through-hole may be directly cast or drilled in the width direction on the copper heat-dissipating substrate. The area of the radiating substrate can be cut according to the requirement of the lamp.
The lower-layer silica gel is a high-temperature-resistant silica gel layer without fluorescent powder, the hemispherical silica gel ball contains yellow fluorescent powder, the upper-layer silica gel contains yellow fluorescent powder, blue light emitted by the LED lamp wick, the hemispherical silica gel ball and yellow light in the upper-layer silica gel are mixed to form white light, and the color temperature of the light can be continuously adjusted by changing the content of the yellow fluorescent powder in the upper-layer silica gel.
Furthermore, the refractive index of the lower layer silica gel is smaller than that of the upper layer silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower layer silica gel and larger than that of the upper layer silica gel.
Further, in the present embodiment, the hemispherical silica gel ball 23 is hemispherical to form a plano-convex mirror, and in the air, the focal length of the plano-convex mirror is at a distance r/(n2-n1) from the top end of the surface, whereas in the present embodiment, since the hemispherical silica gel ball 23 is coated on the lower layer silica gel 22, the focal length of the plano-convex mirror is r/(n2-n1), where n2 is the refractive index of the plano-convex mirror, i.e. the refractive index of the hemispherical silica gel ball 23, n1 is the refractive index of the lower layer silica gel 22, and r is the radius of the lens, i.e. the radius of the upper layer silica gel 24.
Further, as shown in fig. 5, the LED wick is disposed on the heat dissipation substrate, a silica gel layer containing yellow phosphor is encapsulated on the LED wick, the yellow phosphor is excited by blue light emitted from the LED wick to generate yellow light, and the yellow light and the blue light are mixed to form the final white light emitted from the LED.
In summary, the principle and implementation of the white LED package structure provided in the embodiments of the present invention are explained herein by using specific examples, and the above descriptions of the examples are only used to help understand the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (6)
1. A white light LED package structure, comprising:
a heat dissipation substrate (21);
the LED lamp core is arranged on the upper surface of the heat dissipation substrate (21);
the lower layer silica gel (22) is arranged on the upper surface of the LED lamp wick;
the hemispherical silica gel ball (23) is arranged on the upper surface of the lower layer silica gel (22);
the upper layer of silica gel (24) is arranged on the upper surfaces of the lower layer of silica gel (22) and the hemispherical silica gel balls (23);
at least one layer of the hemispherical silica gel ball (23) and the upper layer of silica gel (24) contains yellow fluorescent powder;
the refractive index of the material of the hemispherical silica gel ball (23) is greater than that of the lower silica gel layer (22) and greater than that of the upper silica gel layer (24);
the radius of the hemispherical silica gel balls (23) is larger than 10 micrometers, and the distance between the hemispherical silica gel balls (23) is 5-10 micrometers; the upper layer of silica gel (24) is a semicircular silica gel layer;
the hemispherical silica gel ball (23) is hemispherical to form a plano-convex mirror, the focal length of the plano-convex mirror is r/(n2-n1), wherein n2 is the refractive index of the hemispherical silica gel ball (23), n1 is the refractive index of the lower layer silica gel (22), and r is the radius of the upper layer silica gel (24).
2. The structure of claim 1, wherein the heat dissipation substrate (21) is made of copper and has a thickness of 0.5-10 mm.
3. The structure according to claim 1, characterized in that a plurality of circular through holes are provided inside the heat-dissipating substrate (21) in the width direction of the heat-dissipating substrate (21) and parallel to the plane of the heat-dissipating substrate (21); wherein,
the diameter of the circular through holes is 0.2-0.4 mm, the distance between the circular through holes is 0.5-10 mm, and the circular through holes are directly cast or drilled on the heat dissipation substrate.
4. The structure of claim 1, wherein the LED wick is a GaN-based blue light chip.
5. The structure of claim 4, wherein the GaN-based blue light chip comprises: the GaN buffer layer, the N-type GaN layer, the P-type GaN quantum well wide band gap material, the InGaN layer, the P-type GaN quantum well wide band gap material, the AlGaN barrier layer material and the P-type GaN layer are sequentially arranged on the substrate material.
6. The structure of claim 1, wherein the yellow phosphor has a fluorescence wavelength of 570nm to 620 nm.
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| CN203774371U (en) * | 2014-02-27 | 2014-08-13 | 温州大学 | Packaging structure for fluorescent lens to be applied to high-power LED |
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| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN102185093A (en) * | 2011-04-08 | 2011-09-14 | 陕西科技大学 | Active cool type radiating substrate using air convection |
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