CN208142220U - A kind of White-light LED package structure - Google Patents
A kind of White-light LED package structure Download PDFInfo
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- CN208142220U CN208142220U CN201721624638.8U CN201721624638U CN208142220U CN 208142220 U CN208142220 U CN 208142220U CN 201721624638 U CN201721624638 U CN 201721624638U CN 208142220 U CN208142220 U CN 208142220U
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- silica gel
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- hemispherical
- dissipation substrate
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 145
- 239000000741 silica gel Substances 0.000 claims abstract description 137
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 230000017525 heat dissipation Effects 0.000 claims abstract description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 30
- 241000217776 Holocentridae Species 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 29
- 238000004806 packaging method and process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000004383 yellowing Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model relates to a kind of White-light LED package structure, which includes：Heat-radiating substrate 21；LED lamp is set to 21 upper surface of heat-radiating substrate；Lower layer's silica gel 22 is set to the LED lamp upper surface；Semispherical silicon glueballs 23 is set to 22 upper surface of lower layer's silica gel；Upper layer silica gel 24 is set to lower layer's silica gel 22 and 23 upper surface of semispherical silicon glueballs.The White-light LED package structure of the utility model reduces the cost of copper product while intensity has almost no change；By the way of intermediate throughholes, the channel of air circulation can be increased, using the thermal convection of air, increase heat dissipation effect.
Description
Technical Field
The utility model relates to a packaging technology field especially relates to a white light LED packaging structure.
Background
The LED has the characteristics of long service life, high luminous efficiency, good color rendering property, safety, reliability, rich colors and easy maintenance. Under the background of today's increasingly serious environmental pollution, climate warming and energy shortage, semiconductor lighting technology developed based on high-power LEDs has been recognized as one of the most promising high-tech fields in the 21 st century. This is a major leap in the history of human lighting since gas lighting, incandescent lamps and fluorescent lamps, and has rapidly improved the lighting quality of human life.
In recent years, the LED mostly adopts a GaN-based blue light wick plus yellow fluorescence to generate white light to realize illumination, and this method has the following problems. Firstly, light emitted by an LED light source is generally distributed in a divergent mode, namely Lambert distribution, so that the illumination brightness of the light source is not concentrated enough, and secondary shaping is generally needed through an external lens to meet the illumination requirement of a specific occasion, so that the production cost is increased; secondly, in the current high-power white light LED packaging structure, fluorescent powder is generally directly coated on the surface of a chip, and the chip has an absorption effect on back-scattered light, so that the light extraction efficiency of the packaging is reduced by the direct coating method, and in addition, the quantum efficiency of the fluorescent powder is obviously reduced by the high temperature generated by the chip, so that the lumen efficiency of the packaging is seriously influenced; thirdly, only a part of energy in the input power of the LED is converted into light energy, and the rest of energy is converted into heat energy, so that how to control the energy of the LED chip, especially the LED chip with high power density, is an important problem to be solved emphatically in LED manufacturing and lamp; then, because the high-power LED is used in occasions such as illumination, the cost control is very important, the structural size of the external heat sink of the high-power LED lamp is not allowed to be too large, active heat dissipation in modes such as a power-on fan and the like cannot be allowed, the safe junction temperature of the LED chip in operation is within 110 ℃, if the junction temperature is too high, a series of problems such as light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, chip accelerated aging and the like can be caused, the service life of the LED is greatly reduced, and meanwhile, the accelerated aging of the packaging adhesive colloid filled on the chip can be caused, and the light transmission efficiency of the LED is influenced; finally, most of the chips are packaged on a thin metal heat dissipation substrate, and the metal heat dissipation substrate is thin, has small heat capacity and is easy to deform, so that the contact between the metal heat dissipation substrate and the bottom surface of the heat dissipation plate is not tight enough, and the heat dissipation effect is affected.
SUMMERY OF THE UTILITY MODEL
Therefore, for solving the technical defect and not enough that prior art exists, the utility model provides a white light LED packaging structure.
Specifically, an embodiment of the present invention provides a white light LED package structure, including:
a heat dissipation substrate 21;
the LED lamp core is arranged on the upper surface of the heat dissipation substrate 21;
the lower layer of silica gel 22 is arranged on the upper surface of the lamp wick;
the hemispherical silica gel balls 23 are arranged on the upper surface of the lower layer silica gel 22;
and the upper layer of silica gel 24 is arranged on the upper surfaces of the lower layer of silica gel 22 and the hemispherical silica gel ball 23.
In an embodiment of the present invention, the heat dissipation substrate 21 is made of copper, and has a thickness of 0.5-10 mm.
In an embodiment of the present invention, a plurality of circular through holes are disposed inside the heat dissipation substrate 21 along the width direction of the heat dissipation substrate 21 and parallel to the plane of the heat dissipation substrate 21; wherein,
the diameter of the circular through holes is 0.2-0.4 mm, the distance between the circular through holes is 0.5-10 mm, and the circular through holes are directly cast or drilled on the heat dissipation substrate.
In an embodiment of the present invention, the wick is a GaN-based blue light chip.
In an embodiment of the present invention, the radius of the hemispherical silica gel ball 23 is greater than 10 microns, and the distance is 5-10 microns.
The embodiment of the utility model provides a, possess following advantage:
1. the fluorescent powder and the LED chip in the white light LED packaging structure are separated, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused under the high-temperature condition is solved.
2. The silica gel contacted with the LED lamp wick is high-temperature resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
3. The utility model discloses the white light LED packaging structure lower floor silica gel refracting index of preparation is less than upper silica gel, and the refracting index of hemisphere silica gel ball material is greater than lower floor silica gel refracting index and is greater than upper silica gel refracting index, and this kind of setting up mode can improve the luminousness of LED chip, and what make the light that the LED chip launched can be more shines away through packaging material.
4. The utility model adopts the mode of the middle through hole, and reduces the cost of the copper material while the strength is almost unchanged; the mode of middle through-hole is adopted, the passageway of circulation of air can be increased, and the heat convection of utilization air has increased the radiating effect.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic view of a white light LED package structure provided in an embodiment of the present invention;
fig. 2 is a flowchart of another white LED packaging method according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a GaN-based blue light chip according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a heat dissipation substrate according to an embodiment of the present invention;
fig. 5 is a schematic view of another white LED package structure provided in an embodiment of the present invention;
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Example one
Referring to fig. 1, fig. 1 is a schematic view of a white light LED package structure according to an embodiment of the present invention.
The structure includes:
a heat dissipation substrate 21;
the LED lamp core is arranged on the upper surface of the heat dissipation substrate 21;
the lower layer of silica gel 22 is arranged on the upper surface of the LED lamp wick;
the hemispherical silica gel balls 23 are arranged on the upper surface of the lower layer silica gel 22;
and the upper layer of silica gel 24 is arranged on the upper surfaces of the lower layer of silica gel 22 and the hemispherical silica gel ball 23.
The heat dissipation substrate 21 is made of copper, and the thickness of the heat dissipation substrate is 0.5-10 mm.
Further, a plurality of circular through holes are formed in the heat dissipation substrate 21 along the width direction of the heat dissipation substrate 21 and parallel to the plane of the heat dissipation substrate 21.
Furthermore, the diameter of the circular through holes is 0.2-0.4 mm, the distance is 0.5-10 mm, and the circular through holes are directly formed by casting or directly formed by drilling on the heat dissipation substrate.
The radius of the hemispherical silica gel balls 23 is larger than 10 micrometers, and the distance between the hemispherical silica gel balls is 5-10 micrometers.
The beneficial effects of the utility model are that:
1. the fluorescent powder and the LED chip in the white light LED packaging structure are separated, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused under the high-temperature condition is solved.
2. The silica gel contacted with the LED lamp wick is high-temperature resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
3. The utility model discloses the white light LED packaging structure lower floor silica gel refracting index of preparation is less than upper silica gel, and the refracting index of hemisphere silica gel ball material is greater than lower floor silica gel refracting index and is greater than upper silica gel refracting index, and this kind of setting up mode can improve the luminousness of LED chip, and what make the light that the LED chip launched can be more shines away through packaging material.
4. The utility model adopts the mode of the middle through hole, and reduces the cost of the copper material while the strength is almost unchanged; the mode of middle through-hole is adopted, the passageway of circulation of air can be increased, and the heat convection of utilization air has increased the radiating effect.
Example two
Referring to fig. 2 and fig. 3, fig. 2 is a flowchart of another white light LED packaging method according to an embodiment of the present invention, and fig. 3 is a schematic structural diagram of a GaN-based blue light chip according to an embodiment of the present invention. On the basis of the above embodiments, the present embodiment will describe the process flow of the present invention in more detail. The method comprises the following steps:
s1 lamp wick selection
A GaN-based blue light chip is selected as a wick, the structure of the GaN-based blue light chip is shown in figure 3, and the chip comprises: the GaN-based substrate comprises a substrate material 1, a GaN buffer layer 2, an N-type GaN layer 3, a P-type GaN quantum well wide band gap material 4, an InGaN layer 5, a P-type GaN quantum well wide band gap material 6, an AlGaN barrier layer material 7 and a P-type GaN layer 8.
S2, selecting a heat dissipation substrate
S21, support/heat sink substrate preparation
The method comprises the steps of selecting metal copper as a material of a heat dissipation substrate, wherein the thickness of the heat dissipation substrate is 0.5-10 mm. The heat dissipation substrate is internally provided with a circular through hole which is parallel to the plane of the heat dissipation substrate along the width direction; wherein the number of the circular through holes is n, n is more than or equal to 2, the diameter is 0.2-0.4 mm, and the distance between the circular through holes is 0.5-10 mm. The circular through-hole may be directly cast or drilled in the width direction on the copper heat-dissipating substrate. The area of the radiating substrate can be cut according to the requirement of the lamp.
S22, cleaning the support/heat dissipation substrate;
and cleaning stains, especially oil stains, of the support/heat dissipation substrate. When packaging, the support and the heat dissipation substrate must be kept clean.
S23, baking the support/heat dissipation substrate;
and baking the support/heat dissipation substrate to keep the support/heat dissipation substrate dry.
S3 lamp wick welding
S31, printing solder
Printing solder on the lamp wick;
s32, die bonding inspection
Carrying out die bonding inspection on the wick printed with the solder;
s33 reflow soldering
And welding the lamp wick above the heat dissipation substrate by using a reflow soldering process, wherein the welding adopts a standard reflow soldering process.
S4 growth on silica gel
S41, preparing lower layer silica gel;
s411, coating a first silica gel layer above the heat dissipation substrate provided with the lamp wick in a coating mode, wherein the first silica gel layer is a high-temperature-resistant silica gel layer without fluorescent powder;
s412, baking the first silica gel layer at the baking temperature of 90-125 ℃ for 15-60 min, and curing the first silica gel layer to form the lower-layer silica gel.
S42, preparing a hemispherical silica gel ball;
s421, coating a silica gel ball material on the upper surface of the lower layer silica gel in a coating mode, wherein the silica gel ball material is yellow fluorescent powder; the silica gel ball material containing the yellow fluorescent powder is prepared by the following steps:
s4211, preparing fluorescent powder glue
Preparing yellow fluorescent powder according to the index requirements of specific LED lamps, wherein the yellow fluorescent powder can adopt (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu, M- α -SiAlON, Eu and other materials, and mixing the yellow fluorescent powder with the silica gel ball material;
s4212, color test
Carrying out color test on the mixed silica gel ball material to enable the fluorescence wavelength of the silica gel ball material to be 570-620 nm;
s4213, baking
And baking the silica gel ball material subjected to the color test.
S422, forming the silica gel ball on the silica gel ball material by utilizing the first hemispherical mold;
s423, baking the silica gel ball material provided with the first hemispherical mold at the baking temperature of 90-125 ℃ for 15-60 min to solidify the silica gel ball material;
s424, after baking is finished, removing the first hemispherical mold to form a hemispherical silica gel ball;
preferably, the hemispherical silica gel balls can be uniformly arranged in a rectangular shape or staggered;
s43, preparing upper layer silica gel.
S431, coating a second silica gel layer above the hemispherical silica gel ball and the lower silica gel layer in a coating mode, wherein the second silica gel layer contains yellow fluorescent powder; the second silica gel layer containing the yellow fluorescent powder is prepared by the following steps:
s4311 preparing fluorescent powder glue
Preparing yellow fluorescent powder according to the index requirements of specific LED lamps, wherein the yellow fluorescent powder can adopt (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu, M- α -SiAlON, Eu and other materials, and mixing the yellow fluorescent powder with the second silica gel layer;
s4312, color test
Carrying out color test on the mixed second silica gel layer to enable the fluorescence wavelength of the mixed second silica gel layer to be 570-620 nm;
s4313, baking
And baking the second silica gel layer after the color test.
S432, arranging a second hemispherical mold in the second silica gel layer, and forming second hemispherical silica gel in the second silica gel layer by using the second hemispherical mold;
s433, baking the second silica gel layer provided with the second hemispherical mold at 90-125 ℃ for 15-60 min to solidify the second silica gel layer with the second hemispherical mold;
s434, after baking, removing the second hemispherical mold arranged in the second silica gel layer to form upper silica gel;
s44, long-time baking;
baking the lower layer silica gel, the hemispherical silica gel lens and the upper layer silica gel at the baking temperature of 100-150 ℃ for 4-12 h to finish the packaging of the LED;
preferably, the refractive index of the lower silica gel is smaller than that of the upper silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower silica gel and larger than that of the upper silica gel.
S5 testing and sorting packaged LEDs
S6 white light LED packaging structure qualified in packaging test
The beneficial effects of the utility model are that:
1. the utility model discloses well phosphor powder and the separation of LED wick have solved the problem that high temperature arouses phosphor powder quantum efficiency to descend.
2. The utility model discloses well silica gel contains phosphor powder for light becomes the yellow light at secondary adjustment in-process part, and through the content that changes yellow phosphor powder in the upper silica gel, the colour that can continuous adjustment light becomes the yellow light again from white light, can also adjust the colour temperature of light source.
3. The utility model discloses in be high temperature resistant silica gel with the silica gel of LED wick contact, solved the problem that the luminousness that the ageing yellowing of silica gel arouses descends.
4. The utility model discloses utilize the different characteristics of different kind silica gel refracting index, form hemisphere silica gel ball in silica gel, improve the luminous dispersed problem of LED chip, the light that makes the light source send can concentrate more.
5. The utility model discloses the white light LED packaging structure lower floor silica gel refracting index of preparation is less than upper silica gel, and the refracting index of hemisphere silica gel ball material is greater than lower floor silica gel refracting index and is greater than upper silica gel refracting index, and this kind of setting up mode can improve the luminousness of LED chip, and what make the light that the LED chip launched can be more shines away through packaging material.
6. The utility model adopts the mode of the middle through hole, and reduces the cost of the copper material while the strength is almost unchanged; the mode of middle through-hole is adopted, the passageway of circulation of air can be increased, and the heat convection of utilization air has increased the radiating effect.
7. The hemispherical silica gel ball lens changes the propagation direction of light, can effectively inhibit the total reflection effect, and is beneficial to emitting more light to the outside of the LED, namely the external quantum efficiency of the LED device is increased, or the luminous efficiency of the LED is improved.
8. The thickness of the heat dissipation substrate is thick, so that the heat dissipation substrate is not easy to deform, heat dissipation is easy when additional heat dissipation equipment is added, and the phenomenon that the heat dissipation effect is poor due to the fact that the heat dissipation substrate is not attached to peripheral heat dissipation equipment due to deformation is avoided.
EXAMPLE III
Please refer to fig. 1 and fig. 4 and 5 together, fig. 4 is a schematic structural diagram of a heat dissipation substrate according to an embodiment of the present invention; fig. 5 is a schematic view of another white LED package structure according to an embodiment of the present invention. In this embodiment, a white LED package structure is described in detail based on the above embodiments, and as shown in fig. 1, the white LED package structure includes: the LED lamp comprises a packaging radiating substrate 21 with an LED lamp wick, lower silica gel 22, a hemispherical silica gel ball 23 and upper silica gel 24. Wherein, the radius R of the hemispherical silica gel ball 23 is more than 10 microns; the distance L from the hemispherical silica gel ball 23 to the lamp wick is more than 10 microns; the distance between the hemispherical silica gel balls 23 is 5-10 microns, and the smaller the distance, the better the distance; the thickness D of the heat dissipation substrate 21 is 90-140 micrometers; the width W of the heat dissipating substrate 21 is greater than 5 mils (1mil — 1/45mm), or greater than 20 micrometers.
As shown in fig. 3, the wick is a GaN-based blue chip, and the chip includes: the GaN-based substrate comprises a substrate material 1, a GaN buffer layer 2, an N-type GaN layer 3, a P-type GaN quantum well wide band gap material 4, an InGaN layer 5, a P-type GaN quantum well wide band gap material 6, an AlGaN barrier layer material 7 and a P-type GaN layer 8.
As shown in FIG. 4, the heat dissipation substrate 21 is made of copper, and the thickness D of the heat dissipation substrate is 0.5-10 mm. The radiating substrate is internally provided with circular through holes which are parallel to the radiating substrate plane along the width W direction and vertical to the radiating substrate length L direction, the number of the circular through holes is n, n is more than or equal to 2, the diameter is 0.2-0.4 mm, and the distance L2 between the circular through holes is 0.5-10 mm. The circular through-hole may be directly cast or drilled in the width direction on the copper heat-dissipating substrate. The area of the radiating substrate can be cut according to the requirement of the lamp.
The lower-layer silica gel is a high-temperature-resistant silica gel layer without fluorescent powder, the hemispherical silica gel ball contains yellow fluorescent powder, the upper-layer silica gel contains yellow fluorescent powder, blue light emitted by the LED lamp wick, the hemispherical silica gel ball and yellow light in the upper-layer silica gel are mixed to form white light, and the color temperature of the light can be continuously adjusted by changing the content of the yellow fluorescent powder in the upper-layer silica gel.
Furthermore, the refractive index of the lower layer silica gel is smaller than that of the upper layer silica gel, and the refractive index of the hemispherical silica gel ball material is larger than that of the lower layer silica gel and larger than that of the upper layer silica gel.
Further, in the present embodiment, the hemispherical silica gel ball 23 is hemispherical to form a plano-convex mirror, and in the air, the focal length of the plano-convex mirror is at a distance r/(n2-n1) from the top end of the surface, whereas in the present embodiment, since the hemispherical silica gel ball 23 is coated on the lower layer silica gel 22, the focal length of the plano-convex mirror is r/(n2-n1), where n2 is the refractive index of the plano-convex mirror, i.e. the refractive index of the hemispherical silica gel ball 23, n1 is the refractive index of the lower layer silica gel 22, and r is the radius of the lens, i.e. the radius of the upper layer silica gel 24.
In summary, the principle and the implementation of the white LED package structure provided by the embodiments of the present invention are explained herein by applying specific examples, and the above descriptions of the embodiments are only used to help understand the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be changes in the specific embodiments and applications, and in summary, the content of the present specification should not be understood as a limitation to the present invention, and the scope of the present invention should be defined by the appended claims.
Claims (5)
1. A white light LED package structure, comprising:
a heat dissipation substrate (21);
the LED lamp core is arranged on the upper surface of the heat dissipation substrate (21);
the lower layer silica gel (22) is arranged on the upper surface of the LED lamp wick;
the hemispherical silica gel ball (23) is arranged on the upper surface of the lower layer silica gel (22);
the upper layer of silica gel (24) is arranged on the upper surfaces of the lower layer of silica gel (22) and the hemispherical silica gel balls (23); the lower-layer silica gel (22) is a high-temperature-resistant silica gel layer without fluorescent powder, the hemispherical silica gel ball (23) contains yellow fluorescent powder, the upper-layer silica gel (24) contains yellow fluorescent powder, the refractive index of the lower-layer silica gel (22) is smaller than that of the upper-layer silica gel (24), and the refractive index of the hemispherical silica gel ball (23) is larger than that of the lower-layer silica gel (22) and that of the upper-layer silica gel (24).
2. The structure of claim 1, wherein the heat dissipation substrate (21) is made of copper and has a thickness of 0.5-10 mm.
3. The structure according to claim 1, characterized in that a plurality of circular through holes are provided inside the heat-dissipating substrate (21) in the width direction of the heat-dissipating substrate (21) and parallel to the plane of the heat-dissipating substrate (21); wherein,
the diameter of the circular through holes is 0.2-0.4 mm, the distance between the circular through holes is 0.5-10 mm, and the circular through holes are directly cast or drilled on the heat dissipation substrate.
4. The structure of claim 1, wherein the wick is a GaN-based blue light chip.
5. The structure of claim 1, wherein the semi-spherical silica gel balls (23) have a radius of greater than 10 microns and a pitch of 5-10 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721624638.8U CN208142220U (en) | 2017-11-28 | 2017-11-28 | A kind of White-light LED package structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721624638.8U CN208142220U (en) | 2017-11-28 | 2017-11-28 | A kind of White-light LED package structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270530A (en) * | 2021-04-02 | 2021-08-17 | 白蕊 | Heat exchange channel type LED packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270530A (en) * | 2021-04-02 | 2021-08-17 | 白蕊 | Heat exchange channel type LED packaging structure |
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