CN107785304A - Using nitride film as SOI materials of insulating buried layer and preparation method thereof - Google Patents
Using nitride film as SOI materials of insulating buried layer and preparation method thereof Download PDFInfo
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- CN107785304A CN107785304A CN201610792264.4A CN201610792264A CN107785304A CN 107785304 A CN107785304 A CN 107785304A CN 201610792264 A CN201610792264 A CN 201610792264A CN 107785304 A CN107785304 A CN 107785304A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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Abstract
The invention discloses a kind of using nitride film as SOI materials of insulating buried layer and preparation method thereof, belong to semi-conducting material manufacturing technology field.The nitride compound type insulating film with Thermal conductivity, compact structure is prepared using PECVD method, and it is combined with techniques such as hydrogen ion injection, wafer bonding, annealing, grinding and polishing and microwave slivers, the soi structure using silicon oxynitride/silicon nitride/silicon oxynitride laminated film as insulating barrier is prepared, the heat conductivility of this SOI materials is better than conventional SiO2For the SOI of insulating buried layer, high temperature, the needs of high-power SOI circuits are more adapted to.In addition, the dielectric constant of silicon nitride is all higher than SiO2Dielectric constant, gate dielectric candidate material can be used as.
Description
Technical field
The present invention relates to technical field of semiconductor material preparation, and in particular to a kind of using nitride film as insulating buried layer
SOI materials and preparation method thereof.
Background technology
Due to the advantage of SOI (Silicon On Insulator, the silicon on insulating barrier) structure, based on this structure
Device will reduce junction capacity and leakage current in itself, improve switching speed, reduce power consumption, realize at a high speed, low power operation,
Its performance is substantially better than body silicon device and circuit.The application of SOI device at present progressively expands to from military, space flight and industry
The fields such as data processing, communication and consumer electronics.As si-substrate integrated circuit technology of future generation, SOI technology is widely used in
Most of fields of microelectronics, while be also applied in other fields such as photoelectron, MEMS.Just because of it is above-mentioned a little and extensively
General application, becomes study hotspot.SOI technology is described as " the silicon integrated circuit technology of 21 century "
Although SOI materials can be successfully applied at a high speed, in the consumer IC products of low-power consumption, he is in high temperature high power device
Application (automobile, household electrical appliance and electric power facility etc.) or presence limitation in part.One of subject matter is spontaneous fuel factor,
I.e. by insulating barrier SiO2Heat conductivity it is poor (its pyroconductivity only has nearly 1%) of silicon to cause device overheating failure problem, this
Problem can be by using the preferable insulation film (Si of heat conductivity3N4,AlN,Al2O3, diamond or DLC etc.) and substitution SiO2Film
To solve, wherein silicon nitride film (compares SiO by its thermal conductivity is high2High an order of magnitude), good insulating, dielectric constant it is high,
The features such as coefficient of heat transfer height, compact structure, chemical property are stable, preparation technology is simple and processing compatibility is high, cost is low, is expected to
As replacement SiO2For insulating buried layer and the sole material of industrialization.
Generally use CVD method high temperature deposition silicon nitride film, but due to high post-depositional drawing be present in this method
Stretch stress (up to 1010dyne/cm2), easily it is cracked more than certain thickness, is not particularly suited for the preparation of SOI materials.
The content of the invention
It is an object of the invention to provide a kind of using nitride film as SOI materials of insulating buried layer and preparation method thereof,
By PECVD method low temperature depositing silicon nitride films, the nitride film with Thermal conductivity is obtained as insulating buried layer
SOI materials.
To achieve the above object, the technical solution adopted by the present invention is：
A kind of SOI materials using nitride film as insulating buried layer, the SOI materials are buried by insulation of nitride film
Layer, the insulating buried layer is sequentially compounding by silicon oxynitride film, silicon nitride film and silicon oxynitride film.The nitrogen oxidation
Silicon film thickness is 10nm~2 μm, and the silicon nitride film gross thickness is 10nm~10 μm.The top silicon surface of the SOI materials
Thickness be 0.02-1.5 μm or 3-250 μm.
The preparation method using nitride film as the SOI materials of insulating buried layer, comprise the following steps：
(1) prepare the silicon chip as device substrate and support substrate, device substrate silicon chip and support substrate silicon chip are carried out
Depositing silicon oxynitride silicon thin film is distinguished after plasma situ cleaning again；Used in device substrate and support substrate is arbitrary dimension,
The silicon chip of crystalline phase, conduction type and resistance；
(2) device substrate for having silicon oxynitride film will be deposited and support substrate carries out hydrogen plasma etching processing, then
Silicon oxynitride film surface cvd nitride silicon thin film in device substrate and/or support substrate；
(3) process of repeat step (2) n times, n >=0 (n is by integer) is until the silicon nitride film gross thickness deposited reaches
It is required that；
(4) device substrate after step (3) processing and support substrate obtain institute after mode I or mode II are handled
State the SOI materials using nitride film as insulating buried layer；Wherein：The process of mode I is：Device substrate and support substrate are entered
Line unit closes, and gained bonding pad carries out grinding and polishing processing, obtains the SOI materials that top layer silicon thickness is 3-250 μm；The process of mode II
For：Device substrate is subjected to hydrogen Plasma inpouring, is then bonded device substrate and support substrate, gained bonding pad is carried out
Microwave sliver forms SOI, then carries out CMP processing to the SOI of formation, obtains the SOI materials that top layer silicon thickness is 0.02-1.5 μm.
In step (1), gas that the plasma situ cleaning uses is hydrogen, hydrogen flowing quantity be 50sccm~
100sccm, scavenging period are 10mim~20min.
In step (1), using PECVD method depositing silicon oxynitride silicon thin film, gas needed for it is silane, laughing gas, hydrogen
Gas and argon gas, flow be respectively 5sccm~25sccm, 2sccm~20sccm, 10sccm~50sccm and 30sccm~
60sccm, deposition pressure 5-10Pa, sedimentation time 10min-3h, deposit thickness are 10nm~2 μm.
In step (2), in the hydrogen plasma etching process, required gas is hydrogen, flow be 60sccm~
100sccm, etch period are 1~12min.
In step (2), using PECVD method cvd nitride silicon thin film, wherein, required gas is silane, ammonia, hydrogen
And argon gas, flow are respectively 5sccm~25sccm, 5sccm~20sccm, 10sccm~50sccm and 30sccm~60sccm,
Deposition pressure 5-10Pa, sedimentation time 2min-30min, institute's cvd nitride silicon film thickness are 10nm~10 μm.
The every layer of silicon oxynitride film thickness deposited and ratio≤1 of silicon nitride film gross thickness.
The ratio between thickness of silicon nitride film deposited in device substrate and support substrate is arbitrary value.
Design principle of the present invention is as follows：
The present invention contains many dislocations, surface state and dangling bonds etc. in the silicon nitride film deposited with PECVD methods
Defect, greatly reduce the quality of silicon nitride film.In silicon nitride film early growth period, one layer of amorphous hatching layer is first grown, is incubated
Change layer contain dislocation, surface state with density the defects of dangling bonds can directly affect silicon nitride film Enhancing Nucleation Density and core grow
Greatly, thus reduce amorphous hatching layer the defects of density, increase surface-active and reduce surface energy be improve silicon nitride film matter
The important step of amount.Thus in deposition process, hydrogen plasma etching link is increased, using the corrasion of hydrogen plasma,
While silicon dangling bonds are filled up, weak Si-N keys are broken, and re-form stable Si-N keys, while film can be increased
Surface-active, forming core energy is reduced, in the hope of preparing high quality silicon nitride film.In addition silicon nitride film easy shape after the high-temperature anneal
Into polycrystalline, certain thickness silicon oxynitride film is thus deposited before cvd nitride silicon thin film, to improve the interface of buried regions energy,
Meanwhile it can be reduced by regulating and controlling silicon oxynitride film and silicon nitride film thickness after high annealing due to coefficient of thermal expansion differences
SOI warpages change caused by different.
From the foregoing, it will be observed that the present invention etches method alternately by nitride deposition and hydrogen plasma, increase simultaneously
Silicon oxynitride transition zone, silicon oxynitride film/silicon nitride film/silicon oxynitride laminated film is prepared for as insulating buried layer, knot
Cleaning is closed, is injected, bonding, microwave sliver, is annealed, the technical process such as grinding and polishing, the good SOI materials of heat conductivility is prepared, solves
With SiO2The problem of film is serious for the SOI device spontaneous heating of insulating buried layer, meanwhile, reduce SOI caused by high annealing
The problem of warpage change is serious.
Advantages of the present invention and have the beneficial effect that：
PECVD method low temperature depositing silicon nitride film is used in the present invention, etches and increases in combination with hydrogen plasma
Add the method for silicon oxynitride transition zone, increase the quality of silicon nitride film, and reduce the internal stress caused by lattice mismatch, together
When it is larger due to thermal coefficient of expansion difference when reducing high annealing caused by whole SOI warpage change.
Brief description of the drawings
Fig. 1 is the process chart of the embodiment of the present invention 1.
Fig. 2 is the process chart of the embodiment of the present invention 2.
Embodiment
Embodiment 1：
The present embodiment is that preparation forms top silicon surface/silicon oxynitride film/silicon nitride film/silicon oxynitride film/silicon lining
The SOI materials at bottom, every layer of thickness is respectively 20nm/10nm/60nm/10nm/725 μm.Comprise the following steps that：
1) it is 8.5-11.5ohm.cm from 8 cun of p-type resistivity, crystal orientation<100>, thickness is 725 μm of silicon chips as device
Substrate and support substrate.
2) HF, H are used successively2SO4And H2O2Mixed solution and deionized water successively device substrate and support substrate are carried out
It is cleaned by ultrasonic, and the reaction chamber of PECVD device is put into after drying.
3) hydrogen plasma situ cleaning is carried out to device substrate and support substrate, hydrogen flowing quantity 50sccm, during cleaning
Between be 20min.
4) carry out silicon oxynitride film deposition to device substrate or support substrate, it is gases used for silane, laughing gas, hydrogen and
Argon gas, flow are respectively 5sccm, 2sccm, 50sccm and 60sccm.Deposit thickness is 10nm.
5) hydrogen plasma etching, hydrogen flowing quantity 60sccm are carried out to device substrate or support substrate, etch period is
2min。
6) silicon nitride film deposition is carried out on silicon oxynitride film surface, gases used is silane, ammonia, hydrogen and argon
Gas, flow are respectively 5sccm, 5sccm, 50sccm and 60sccm, sedimentation time 5min.
7) substrate after cvd nitride silicon thin film carries out hydrogen plasma etching, hydrogen flowing quantity 60sccm, etch period
For 2min..
8) silicon nitride film deposition is carried out again to silicon nitride film surface, gases used is silane, ammonia, hydrogen and argon
Gas, flow are respectively 5sccm, 5sccm, 50sccm and 60sccm, deposit thickness 30nm.
9) hydrogen ion injection is carried out to device substrate, injection depth is 60nm.
10) device substrate is carried out into cryogenic vacuum with support substrate to be bonded, forms bonding pad.
11) para-linkage piece carries out process annealing processing, and annealing temperature is 300 DEG C.
12) para-linkage piece carries out microwave sliver, forms soi structure material.
13) CMP processing finally is carried out to top layer silicon, forms the SOI materials that top layer thickness is 20nm.
Embodiment 2：
The present embodiment is that preparation forms top silicon surface/silicon oxynitride film/silicon nitride film/silicon oxynitride film/silicon lining
The SOI materials at bottom, every layer of thickness is respectively 13.5 μm/0.5 μm/4 μm/0.5nm/675 μm.Comprise the following steps that：
1) it is 4-7ohm.cm from 6 cun of N-type resistivity, crystal orientation<110>, thickness is that 675 μm of silicon chip silicon chips serve as a contrast as device
Bottom and support substrate.
2) HF, H are used successively2SO4And H2O2Mixed solution and deionized water successively device substrate and support substrate are carried out
It is cleaned by ultrasonic, and the reaction chamber of PECVD device is put into after drying.
3) hydrogen plasma situ cleaning is carried out to device substrate and support substrate, hydrogen flowing quantity 70sccm, during cleaning
Between be 15min.
4) carry out silicon oxynitride film deposition to device substrate or support substrate, it is gases used for silane, laughing gas, hydrogen and
Argon gas, flow are respectively 15sccm, 8sccm, 30sccm and 30sccm.Deposit thickness is 0.5 μm.
5) hydrogen plasma etching, hydrogen flowing quantity 80sccm are carried out to device substrate or support substrate, etch period is
10min。
6) silicon nitride film deposition is carried out on silicon oxynitride film surface, gases used is silane, ammonia, hydrogen and argon
Gas, flow are respectively 15sccm, 15sccm, 30sccm and 30sccm, sedimentation time 10min.
7) the carry out hydrogen plasma etching after cvd nitride silicon thin film, hydrogen flowing quantity 70sccm, etch period are
5min。
8) to carrying out silicon nitride film deposition again to silicon nitride film surface, it is gases used for silane, ammonia, hydrogen and
Argon gas, flow are respectively 15sccm, 15sccm, 30sccm and 30sccm, and deposit thickness is 0.5 μm.
9) hydrogen plasma etching, hydrogen flowing quantity 70sccm, etch period are carried out to the silicon chip of cvd nitride silicon thin film
For 12min.
10) carry out silicon nitride film deposition again to silicon nitride film surface, it is gases used for silane, ammonia, hydrogen and
Argon gas, flow are respectively 15sccm, 15sccm, 30sccm and 30sccm, and silicon nitride film gross thickness is 1.5 μm after deposition.
11) device substrate is carried out into cryogenic vacuum with support substrate to be bonded, forms bonding pad.
12) para-linkage piece carries out the high temperature anneal, and annealing temperature is 1100 DEG C.
13) last para-linkage piece top layer carries out grinding and polishing processing, forms the SOI materials that top layer silicon thickness is 13.5 μm.
SOI materials prepared by above-described embodiment 1 and embodiment 2 are with silicon oxynitride film/silicon nitride film/silicon oxynitride
Film composite structure is better than conventional SiO as insulating buried layer, compact structure, its heat conductivility2For the SOI of insulating buried layer, more
Adapt to high temperature, the needs of high-power SOI circuits.In addition, the dielectric constant of silicon nitride is all higher than SiO2Dielectric constant, can conduct
Gate dielectric candidate material.
Claims (10)
- A kind of 1. SOI materials using nitride film as insulating buried layer, it is characterised in that：The SOI materials are with nitride film For insulating buried layer, the insulating buried layer is sequentially compounding by silicon oxynitride film, silicon nitride film and silicon oxynitride film.
- 2. the SOI materials according to claim 1 using nitride film as insulating buried layer, it is characterised in that：The nitrogen oxygen SiClx film thickness is 10nm~2 μm, and the silicon nitride film gross thickness is 10nm~10 μm.
- 3. the SOI materials according to claim 1 or 2 using nitride film as insulating buried layer, it is characterised in that：It is described The thickness of the top silicon surface of SOI materials is 0.02-1.5 μm or 3-250 μm.
- 4. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：This method comprises the following steps：(1) prepare silicon chip as device substrate and support substrate, by device substrate silicon chip and support substrate silicon chip carry out etc. from Depositing silicon oxynitride silicon thin film is distinguished after daughter situ cleaning again；(2) device substrate for having silicon oxynitride film will be deposited and support substrate carries out hydrogen plasma etching processing, then in device Silicon oxynitride film surface cvd nitride silicon thin film on part substrate and/or support substrate；(3) process of repeat step (2) n times, n >=0 (n is integer), wanted until the silicon nitride film gross thickness deposited reaches Ask；(4) device substrate after step (3) processing and support substrate be after mode I or mode II are handled, obtain it is described with Nitride film is the SOI materials of insulating buried layer；Wherein：The process of mode I is：Device substrate and support substrate are entered into line unit Close, gained bonding pad carries out grinding and polishing processing, obtains the SOI materials that top layer silicon thickness is 3-250 μm；The process of mode II is： Device substrate is subjected to hydrogen Plasma inpouring, is then bonded device substrate and support substrate, gained bonding pad carries out micro- Ripple sliver forms SOI, then carries out CMP processing to the SOI of formation, obtains the SOI materials that top layer silicon thickness is 0.02-1.5 μm.
- 5. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：In step (1), the gas that the plasma situ cleaning uses is hydrogen, and hydrogen flowing quantity is 50sccm~100sccm, Scavenging period is 10mim~20min.
- 6. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：In step (1), using PECVD method depositing silicon oxynitride silicon thin film, gas needed for it is silane, laughing gas, hydrogen and argon Gas, flow are respectively 5sccm~25sccm, 2sccm~20sccm, 10sccm~50sccm and 30sccm~60sccm, are deposited Air pressure 5-10Pa, sedimentation time 10min-3h, deposit thickness are 10nm~2 μm.
- 7. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：In step (2), in the hydrogen plasma etching process, required gas is hydrogen, and flow is 60sccm~100sccm, is carved The erosion time is 1~12min.
- 8. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：In step (2), using PECVD method cvd nitride silicon thin film, wherein, required gas is silane, ammonia, hydrogen and argon Gas, flow are respectively 5sccm~25sccm, 5sccm~20sccm, 10sccm~50sccm and 30sccm~60sccm, are deposited Air pressure 5-10Pa, sedimentation time 2min-30min, institute's cvd nitride silicon film thickness are 10nm~10 μm.
- 9. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：The every layer of silicon oxynitride film thickness deposited and ratio≤1 of silicon nitride film gross thickness.
- 10. the preparation method according to claim 1 using nitride film as the SOI materials of insulating buried layer, its feature exists In：The ratio between thickness of silicon nitride film deposited in device substrate and support substrate is arbitrary value.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585268A (en) * | 2018-11-02 | 2019-04-05 | 山东天岳先进材料科技有限公司 | A kind of cleaning method of silicon carbide wafer |
| CN114188362A (en) * | 2021-01-20 | 2022-03-15 | 沈阳硅基科技有限公司 | SOI (silicon on insulator) with special structure and preparation method thereof |
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| CN101281912A (en) * | 2007-04-03 | 2008-10-08 | 株式会社半导体能源研究所 | Soi substrate and manufacturing method thereof, and semiconductor device |
| US20100086775A1 (en) * | 2008-10-06 | 2010-04-08 | Bruce Lairson | Optical spectrally selective coatings |
| CN101728312A (en) * | 2008-10-22 | 2010-06-09 | 株式会社半导体能源研究所 | SOI substrate and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101281912A (en) * | 2007-04-03 | 2008-10-08 | 株式会社半导体能源研究所 | Soi substrate and manufacturing method thereof, and semiconductor device |
| US20100086775A1 (en) * | 2008-10-06 | 2010-04-08 | Bruce Lairson | Optical spectrally selective coatings |
| CN101728312A (en) * | 2008-10-22 | 2010-06-09 | 株式会社半导体能源研究所 | SOI substrate and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109585268A (en) * | 2018-11-02 | 2019-04-05 | 山东天岳先进材料科技有限公司 | A kind of cleaning method of silicon carbide wafer |
| CN114188362A (en) * | 2021-01-20 | 2022-03-15 | 沈阳硅基科技有限公司 | SOI (silicon on insulator) with special structure and preparation method thereof |
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