CN106997918A - A kind of LED chip front pad structure - Google Patents
A kind of LED chip front pad structure Download PDFInfo
- Publication number
- CN106997918A CN106997918A CN201710384966.3A CN201710384966A CN106997918A CN 106997918 A CN106997918 A CN 106997918A CN 201710384966 A CN201710384966 A CN 201710384966A CN 106997918 A CN106997918 A CN 106997918A
- Authority
- CN
- China
- Prior art keywords
- poles
- led chip
- metal layer
- conductive metal
- pad structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 20
- 230000005496 eutectics Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a kind of LED chip front pad structure, belong to LED field, including the body being made up of the P poles conductive metal layer stacked gradually, P poles crystalline substrate, N poles crystalline substrate and N poles conductive metal layer, N poles conductive metal layer is connected with N poles pin, P poles conductive metal layer is connected with P poles pin, and N poles conductive metal layer is provided with the bar shaped eutectic welding zone for being used for being connected with N poles pin.Compared with prior art, the LED chip front pad structure increases bonding pad area by setting bar shaped welding zone in LED chip, reduces manufacturing cost, while not influenceing the luminous of LED chip.
Description
Technical field
The present invention relates to LED field, particularly a kind of LED chip front pad structure.
Background technology
Existing LED chip structure is typically connected by gold thread with N poles pin, needs to pass through between gold thread and LED chip
Pad is attached, because the end of gold thread is smaller, is both configured to point-like pad in usual LED chip, but point-like pad face
Product especially small, the problems such as off-line often occurs, the manufacture of point-like pad is difficult in addition, and manufacturing process is cumbersome, causes manufacturing cost
Increase.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of LED chip front pad structure, strip is set in LED chip
Welding zone, while not influenceing the luminous of LED chip, increases bonding pad area, reduces manufacturing cost.
The technical solution adopted by the present invention is：
A kind of LED chip front pad structure, including crystallized by the P poles conductive metal layer, P poles crystalline substrate, N poles stacked gradually
The body that substrate and N poles conductive metal layer are constituted, N poles conductive metal layer is connected with N poles pin, P poles conducting metal
Layer is connected with P poles pin, and N poles conductive metal layer is provided with the bar shaped eutectic welding zone for being used for being connected with N poles pin.
Preferably, the bar shaped eutectic welding zone is one.
Preferably, the bar shaped eutectic welding zone is two, is separately positioned on a pair of margin locations of N poles conductive metal layer
Put.
Preferably, the bar shaped eutectic welding zone is four, and the margin location around the N poles conductive metal layer surrounding is installed
Put.
Preferably, the bar shaped eutectic welding zone is welded with the sheet metal for being connected with N poles pin.
Compared with prior art, the beneficial effects of the present invention are：The present invention provides a kind of LED chip front pad knot
Structure, by setting bar shaped welding zone in LED chip, increases bonding pad area, manufacturing cost is reduced, while not influenceing LED chip
It is luminous.
Brief description of the drawings
A kind of schematic diagram for LED chip front pad structure that Fig. 1 provides for the present invention；
A kind of the first embodiment schematic diagram for LED chip front pad structure that Fig. 2 provides for the present invention；
A kind of second of embodiment schematic diagram of LED chip front pad structure that Fig. 3 provides for the present invention；
A kind of the third embodiment schematic diagram for LED chip front pad structure that Fig. 4 provides for the present invention.
Embodiment
The preferred embodiment that the present invention is provided is illustrated with reference to the accompanying drawings.
A kind of preferred embodiment for LED chip front pad structure that Fig. 1 to Fig. 4 provides for the present invention.Such as Fig. 1 institutes
Show, the LED chip front pad structure includes being crystallized by the P poles conductive metal layer 11, P poles crystalline substrate 12, N poles stacked gradually
The body 10 that substrate 13 and N poles conductive metal layer 14 are constituted, N poles conductive metal layer 14 is connected with N poles pin 20, the P
Pole conductive metal layer 11 is connected with P poles pin 30, and N poles conductive metal layer 14, which is provided with, to be used to be connected 20 with N poles pin
Bar shaped eutectic welding zone 141, the bar shaped eutectic welding zone 141 is welded with the sheet metal 40 for being connected with N poles pin 20, so leads to
The welding metal piece 40 of bar shaped eutectic welding zone 141 is crossed, increases bonding pad area, manufacturing cost is reduced, while not influenceing the hair of LED chip
Light.
As the first preferred embodiment, as shown in Fig. 2 bar shaped eutectic welding zone 141A is one, it is preferably provided at
The centre of N poles conductive metal layer 14.
As second of preferred embodiment, as shown in figure 3, bar shaped eutectic welding zone 141B is two, it is separately positioned on
On a pair of marginal positions of N poles conductive metal layer 14.
As the third preferred embodiment, as shown in figure 4, the bar shaped eutectic welding zone 141C is four, around the N
The marginal position of the surrounding of pole conductive metal layer 14 is set.
In summary, technical scheme can realize foregoing invention purpose, and the knot of the present invention with sufficiently effective
Structure and the principle of work and power have all sufficiently been verified in embodiment, expected effect and purpose can be reached, without departing substantially from this
On the premise of the principle and essence of invention, various changes or modifications can be made to the embodiment of invention.Therefore, the present invention includes
All be previously mentioned in patent claim in the range of all replacement contents, it is any to be made in scope of the present invention patent
Equivalence changes, all belong to this case application the scope of the claims within.
Claims (5)
1. a kind of LED chip front pad structure, including tied by the P poles conductive metal layer, P poles crystalline substrate, N poles stacked gradually
The body that brilliant substrate and N pole conductive metal layer is constituted, N poles conductive metal layer is connected with N poles pin, P poles conductive gold
Category layer is connected with P poles pin, it is characterised in that N poles conductive metal layer is provided with the bar shaped for being used to be connected with N poles pin and is total to
Brilliant welding zone.
2. LED chip front according to claim 1 pad structure, it is characterised in that：The bar shaped eutectic welding zone is one
Bar.
3. LED chip front according to claim 1 pad structure, it is characterised in that：The bar shaped eutectic welding zone is two
On bar, a pair of marginal positions for being separately positioned on N poles conductive metal layer.
4. LED chip front according to claim 1 pad structure, it is characterised in that：The bar shaped eutectic welding zone is four
Bar, the marginal position around the N poles conductive metal layer surrounding is set.
5. according to any described LED chip front pad structure of Claims 1-4, it is characterised in that：The bar shaped eutectic weldering
Area is welded with the sheet metal for being connected with N poles pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710384966.3A CN106997918A (en) | 2017-05-26 | 2017-05-26 | A kind of LED chip front pad structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710384966.3A CN106997918A (en) | 2017-05-26 | 2017-05-26 | A kind of LED chip front pad structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106997918A true CN106997918A (en) | 2017-08-01 |
Family
ID=59436278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710384966.3A Pending CN106997918A (en) | 2017-05-26 | 2017-05-26 | A kind of LED chip front pad structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106997918A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979825A (en) * | 2017-12-15 | 2019-07-05 | 胡志良 | The circuit element production method of array batch potted element crystal grain |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034925A (en) * | 2010-10-28 | 2011-04-27 | 山东华光光电子有限公司 | Flat FCB (Flip Chip Bonding) GaN-based LED (Light-Emitting Diode) chip structure |
| CN202167539U (en) * | 2011-07-28 | 2012-03-14 | 深圳市聚飞光电股份有限公司 | LED support and LED |
| CN102916101A (en) * | 2011-08-04 | 2013-02-06 | 东莞市福地电子材料有限公司 | LED (light emitting diode) chip with flip structure |
| CN203118935U (en) * | 2013-03-22 | 2013-08-07 | 苏州固锝电子股份有限公司 | DFN (dual flat-pack no-lead) package structure for rectifier chip |
| KR20140079588A (en) * | 2012-12-17 | 2014-06-27 | 한국광기술원 | Led package with improved thermal conductivity and method for manufacturing the same |
| US20150014738A1 (en) * | 2012-02-21 | 2015-01-15 | Peiching Ling | Light emitting diode package and method of fabricating the same |
| US20150318444A1 (en) * | 2013-05-24 | 2015-11-05 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Integrated LED Light-Emitting Device and Fabrication Method Thereof |
| CN105280757A (en) * | 2014-05-27 | 2016-01-27 | 易美芯光（北京）科技有限公司 | Preparation method of high-voltage LED chip with vertical structure |
| CN105870300A (en) * | 2016-06-08 | 2016-08-17 | 芜湖聚飞光电科技有限公司 | LED (Light Emitting Diode) packaging structure and packaging method thereof |
| WO2017041280A1 (en) * | 2015-09-11 | 2017-03-16 | 佛山市国星光电股份有限公司 | Led device having transition substrate and encapsulation method therefor |
| CN206878034U (en) * | 2017-05-26 | 2018-01-12 | 厦门市东太耀光电子有限公司 | A kind of LED chip front pad structure |
-
2017
- 2017-05-26 CN CN201710384966.3A patent/CN106997918A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034925A (en) * | 2010-10-28 | 2011-04-27 | 山东华光光电子有限公司 | Flat FCB (Flip Chip Bonding) GaN-based LED (Light-Emitting Diode) chip structure |
| CN202167539U (en) * | 2011-07-28 | 2012-03-14 | 深圳市聚飞光电股份有限公司 | LED support and LED |
| CN102916101A (en) * | 2011-08-04 | 2013-02-06 | 东莞市福地电子材料有限公司 | LED (light emitting diode) chip with flip structure |
| US20150014738A1 (en) * | 2012-02-21 | 2015-01-15 | Peiching Ling | Light emitting diode package and method of fabricating the same |
| KR20140079588A (en) * | 2012-12-17 | 2014-06-27 | 한국광기술원 | Led package with improved thermal conductivity and method for manufacturing the same |
| CN203118935U (en) * | 2013-03-22 | 2013-08-07 | 苏州固锝电子股份有限公司 | DFN (dual flat-pack no-lead) package structure for rectifier chip |
| US20150318444A1 (en) * | 2013-05-24 | 2015-11-05 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Integrated LED Light-Emitting Device and Fabrication Method Thereof |
| CN105280757A (en) * | 2014-05-27 | 2016-01-27 | 易美芯光（北京）科技有限公司 | Preparation method of high-voltage LED chip with vertical structure |
| WO2017041280A1 (en) * | 2015-09-11 | 2017-03-16 | 佛山市国星光电股份有限公司 | Led device having transition substrate and encapsulation method therefor |
| CN105870300A (en) * | 2016-06-08 | 2016-08-17 | 芜湖聚飞光电科技有限公司 | LED (Light Emitting Diode) packaging structure and packaging method thereof |
| CN206878034U (en) * | 2017-05-26 | 2018-01-12 | 厦门市东太耀光电子有限公司 | A kind of LED chip front pad structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979825A (en) * | 2017-12-15 | 2019-07-05 | 胡志良 | The circuit element production method of array batch potted element crystal grain |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20170016580A1 (en) | Led filament and filament-type led bulb | |
| JP2015133477A (en) | Light emitting element | |
| US9362254B1 (en) | Wire bonding method and chip structure | |
| CN106997918A (en) | A kind of LED chip front pad structure | |
| CN206878034U (en) | A kind of LED chip front pad structure | |
| CN109519742A (en) | A kind of strip light with flip LED chips | |
| CN206878033U (en) | A kind of positive and negative eutectic welding structure of vertical LED chip | |
| CN102956792B (en) | Light emitting diode packaging structure | |
| CN105633237A (en) | Vertical light emitting diode (LED) chip | |
| CN204088316U (en) | The 360 degree of luminescences of formal dress flip-chip can arbitrarily around LED silk | |
| CN102661496B (en) | LED (light-emitting diode) light source and corresponding backlight module | |
| CN204257696U (en) | A kind of strongly heat-dissipated COB packaged LED | |
| CN205863220U (en) | A kind of LED bonding wire bank | |
| CN207719202U (en) | Thin-film LED cascaded structure | |
| US20100320498A1 (en) | Light-emitting diode device | |
| CN204088362U (en) | A kind of chip upside-down mounting type LED silk | |
| CN206332046U (en) | A kind of LED encapsulation structure | |
| CN206210844U (en) | Light-emitting diode support structure is improved | |
| CN206877993U (en) | A kind of LED based on front pad can eutectic encapsulating structure | |
| WO2016078052A1 (en) | Led support and led light emitting unit | |
| CN206236705U (en) | The good light emitting diode of heat-resisting quantity | |
| WO2015127698A1 (en) | Led filament and illuminator | |
| CN205595326U (en) | Lead wire electrode, lead wire electrode and IC's connection structure and OLED | |
| CN204464320U (en) | A kind of LED chip electrode layout distribution structure | |
| CN204303809U (en) | Possesses the LED silk of positive temperature voltage compensate function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170801 |
|
| RJ01 | Rejection of invention patent application after publication |