[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN105895792B - 发光组件 - Google Patents

发光组件 Download PDF

Info

Publication number
CN105895792B
CN105895792B CN201610089089.2A CN201610089089A CN105895792B CN 105895792 B CN105895792 B CN 105895792B CN 201610089089 A CN201610089089 A CN 201610089089A CN 105895792 B CN105895792 B CN 105895792B
Authority
CN
China
Prior art keywords
electrode
light emitting
insulating layer
unit
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610089089.2A
Other languages
English (en)
Other versions
CN105895792A (zh
Inventor
丁绍滢
吴协展
黃靖恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genesis Photonics Inc
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Publication of CN105895792A publication Critical patent/CN105895792A/zh
Application granted granted Critical
Publication of CN105895792B publication Critical patent/CN105895792B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种发光组件，包含一发光单元、一电极单元，及一绝缘单元。该发光单元包括一发光体与一封装胶体，该发光体以电致发光产生光能，且该封装胶体形成于该发光体的部分表面。该电极单元包括分别形成于该发光体未形成有该封装胶体的表面的一第一电极与一第二电极。该绝缘单元形成于该发光单元的表面，且包括一凸出于该第一电极与该第二电极之间的第一绝缘层。本发明提供的发光组件，可于后续利用锡膏电性连接于一外部电路板时，藉由该绝缘单元的设置而有效地解决因锡膏溢流而相互接触所造成组件短路的问题。

Description

发光组件
技术领域
本发明涉及一种发光组件，尤其涉及一种具有高制程良率及组件信赖性的发光组件。
背景技术
发光二极管(light emitting diode，LED)由于具有体积小、亮度高、反应时间短、寿命长等优点，因此，由发光二极管进行组装所构成的发光组件，广泛地被应用于照明、广告牌，或作为显示器的背光源等领域。
现有的发光组件制程中，主要是先将发光二极管进行封装后，再利用表面黏着技术(surface mount technology，SMT)将发光二极管焊接于印刷电路板(printed circuitboard，PCB)上，形成电性通路，而制成发光组件。
一般而言，常见的表面黏着技术利用锡膏(solder)将发光二极管电性连接于印刷电路板上，然而，目前以此方式进行连接常见的问题为，锡膏于接合或压合的过程中，容易产生锡膏溢流，熔融的锡膏也因为软化流动而相互接触造成组件短路，进而使得发光组件失效。
因此，由上述的说明可知，发展出一种能克服上述缺点的发光组件，使该发光组件能兼顾制程良率、组件信赖性，是此技术领域的相关技术人员所待突破的课题。
发明内容
因此，本发明的一目的，即在提供一种发光组件。
于是，本发明发光组件，包含一发光单元、一电极单元，及一绝缘单元。
该发光单元包括一发光体与一封装胶体，该发光体以电致发光产生光能，且该封装胶体形成于该发光体的部分表面。
该电极单元包括一第一电极与一第二电极，该第一电极与该第二电极分别形成于该发光体未形成有该封装胶体的的表面。
该绝缘单元形成于该发光单元的表面，且包括一凸出于该第一电极与该第二电极之间的第一绝缘层。
本发明的有益效果在于，在将该发光组件利用锡膏电性连接于一外部电路板时，可藉由该绝缘单元有效地分隔锡膏，以解决因锡膏溢流而造成组件短路的问题，兼具提升制程良率、组件信赖性，以及降低生产成本等优势。
附图说明
图1是一剖视图，说明本发明发光组件的一第一实施例；
图2是一以图1为例的俯视图，说明本发明该第一实施例；
图3是一剖视图，说明本发明该第一实施例的其中一态样；
图4是一剖视图，说明本发明该第一实施例的另一态样；
图5是一以图4为例的俯视图，说明本发明该第一实施例的另一态样；
图6是一剖视图，说明本发明该第一实施例的又一态样；
图7是一剖视图，说明本发明发光组件的一第二实施例；
图8是一剖视图，说明本发明该第二实施例的另一态样；
图9是一剖视图，说明本发明该第二实施例的又一态样；
图10是一俯视图，说明本发明发光组件的一第三实施例；
图11是一立体图，说明本发明发光组件的一第四实施例；
图12是一立体图，说明本发明该第四实施例的另一态样；
图13是一立体图，说明本发明发光组件的一第五实施例；
图14是一类似于图11的立体图，说明本发明该第四实施例不包含该透光基板的结构态样；
图15是一类似于图13的立体图，说明本发明该第五实施例不包含该透光基板的结构态样；
图16是一剖视图，说明以本发明该第一实施例电性连接于一外部电路板的实施态样；
图17是一剖视图，说明以本发明该第二实施例电性连接于该外部电路板的实施态样。
附图标记：
2：发光单元
21：发光体
211：第一面
212：第二面
213：周面
22：封装胶体
221：第三面
222：第四面
23：透光基板
24：出光面
25：底面
3：电极单元
31：第一电极
311：第一电极区
32：第二电极
321：第二电极区
4：绝缘单元
41：第一绝缘层
42：第二绝缘层
43：第三绝缘层
44：凹槽
5：外部电路板
51：垫片
52：锡膏
具体实施方式
在本发明被详细描述之前，应当注意在以下的说明内容中，类似的组件是以相同的编号来表示。有关本发明之技术内容、特点与功效，在以下的详细说明中，将可清楚的呈现。
参阅图1与图2，本发明发光组件的一第一实施例包含一发光单元2、一电极单元3，及一绝缘单元4。
该发光单元2包括一发光体21、一封装胶体22，及一透光基板23。该发光体21以电致发光产生光能且具有一第一面211、一反向于该第一面211的第二面212，及一连接该第一面211与第二面212的周面213。该封装胶体22形成于该周面213及第一面211，且具有彼此反向的一第三面221及一第四面222，该发光体21是自该第四面222朝向该第三面221设置而被该封装胶体22包覆。该透光基板23对应形成于该第一面211的上方，并与该封装胶体22的第三面221连接。
该电极单元3包括一第一电极31，及一第二电极32，该第一电极31与该第二电极32分别形成于该发光体21的第二面212。
此处要说明的是，该发光单元2具有一出光面24，及一反向于该出光面24的底面25，其中，该发光体21的第二面212与该封装胶体22的第四面222即为该底面25。该发光体21具有一N型半导体(图未示)与一P型半导体(图未示)，且该第一电极31与该第二电极32分别电性连接该N型半导体与该P型半导体。详细地说，该发光体21具有一N型半导体层、一形成于该N型半导体层上的发光层，及一形成于该发光层上的P型半导体层，其中，该第一电极31与该第二电极32则分别形成于该N型半导体层与该P型半导体层的表面。
该第一实施例中，由于该发光单元2与该电极单元3的细部结构及材料选用为本技术领域者所熟知，且非为本发明的主要技术特征，因此不再多加赘述。
该绝缘单元4形成于该底面25，且包括一凸出该第一电极31与该第二电极32之间的第一绝缘层41。其中，该第一绝缘层41的材料选自绝缘材料，且可利用网印、UV固化、曝光显影制程，或3D打印等方式形成于该第一电极31与该第二电极32之间。本发明该第一实施例设置该绝缘单元4的目的是于焊接的过程中，用以隔绝该第一电极31与该第二电极32上的锡膏，因此，该绝缘单元4所选用的绝缘材料是可耐制程高温的材料。因此，该第一绝缘层41的材料包括但不限于环氧树脂(epoxy resin)、光阻(photoresist)、塑料、二氧化硅(silicon dioxide，SiO2)、硅树脂(silicone)，或前述其中任意组合。该些材料皆具有优良的抗化性、耐热性与机械性质。
于此还要说明的是，该第一绝缘层41于制作时，可如图1所示，凸出于该第一电极31与该第二电极32之间，由于该第一绝缘层41所选用的材料本身即有防沾锡的功效，因此，该第一绝缘层41也可如图3所示，与该第一电极31及第二电极32齐平，亦可达到相同的功效且具有节省成本的优点。
此外，还要说明的是，该第一绝缘层41除了可如图1与图2所示，形成于该第一电极31与该第二电极32之间且不与该第一电极31及第二电极32接触，亦可如图4与图5所示，该第一绝缘层41可与该第一电极31及第二电极32接触；亦或如图6所示，该第一绝缘层41覆盖部分的该第一电极31及第二电极32，其可依制程条件或成本考虑等情况适时地进行调整，于此并无限制。
参阅图7至图9，本发明发光组件的一第二实施例与该第一实施例大致相同，其不同之处在于，该第二实施例不包含该透光基板23，进而可达到薄型化的设计趋势，亦更加符合市场的需求。
参阅图10，本发明发光组件的一第三实施例与该第一实施例大致相同，其不同之处在于，该绝缘单元4还包括至少一第二绝缘层42，该第二绝缘层42形成于该第一电极31与第二电极32的表面，并将该第一电极31与第二电极32分别区隔成至少二个第一电极区311与至少二个第二电极区321。图10是以该绝缘单元4还包括一第二绝缘层42为例来做说明，但不限于此。此外，由于该第二绝缘层42的材料选择及形成方式与该第一绝缘层41相同，于此不再多加说明。
此处要说明的是，该第一绝缘层41与第二绝缘层42的边缘可与该发光体21的边缘切齐(如图2所示)，亦或可延伸至该封装胶体22的周缘，其可依制程条件或成本考虑等情况适时的进行调整，于此并无限制。图10是以该第一绝缘层41与第二绝缘层42分别延伸至该封装胶体22的周缘为例来做说明，但不限于此。
此外，还要说明的是，本发明该第三实施例藉由该第二绝缘层42进一步将被该第一绝缘层41隔离的该第一电极31与第二电极32分别区隔成二个第一电极区311与二个第二电极区321，因此，可于后续电性连接于一外部电路板时，利用该等第一电极区311与第二电极区321达到对位的功能，进而使该发光组件可更精准的连接于该外部电路板上。
参阅图11，本发明发光组件的一第四实施例与该第一实施例大致相同，其不同之处在于，该绝缘单元4还包括一第三绝缘层43，该第三绝缘层43形成于该封装胶体22的第四面222，且与该第一绝缘层41相连接。具体地说，该第一绝缘层41与第三绝缘层43会凸出于该发光单元2与该电极单元3，并与该发光单元2和该电极单元3共同界定出二个凹槽44。
本发明该第四实施例则藉由该等凹槽44，于后续利用锡膏电性连接于一外部电路板时，除了可提供对位的功能外，还能将锡膏限制于该等凹槽44中，以防止锡膏溢流，亦可避免组件产生短路或漏电的情况。
于此要说明的是，该第一绝缘层41与第三绝缘层43除了可凸出于该发光单元2与该电极单元3，同样地，如图12所示，也可如前述该第一实施例所述，与该电极单元3齐平。
参阅图13，本发明发光组件的一第五实施例与该第四实施例大致相同，其不同之处在于，该绝缘单元4还包括该第二绝缘层42，也就是说，该第三绝缘层43会与该第一绝缘层41与该第二绝缘层42相连接，且同该第四实施例所述，该第一绝缘层41、第二绝缘层42与第三绝缘层43会与该发光单元2和该电极单元3共同界定出四个凹槽44。
此外，还需说明的是，配合参阅图14与图15，本发明该第四实施例及第五实施例与该第二实施例相同也可不包含该透光基板23，以达到薄型化的设计趋势。
参阅图16与图17，图16与图17是说明分别以本发明该第一实施例与第二实施例为例，将其电性连接于一外部电路板5上。于是，在将本发明该第一实施例与第二实施例接合于一外部电路板5的过程中，需先在该外部电路板5上配置多个垫片51，再于该些垫片51上印刷锡膏52，再将本发明该第一实施例与第二实施例的发光组件电性连接于该外部电路板5上。
本发明该第一实施例至第五实施例所呈现不同态样的发光组件，主要都是藉由该绝缘单元4而将该第一电极31与第二电极32隔离，以防止焊锡时锡膏溢流所造成组件短路的问题。因此，可有效地提升制程良率与组件信赖性，进而可因产品良率的提升而达到降低生产成本的优点。另一方面，本发明该发光组件还能藉由该第一绝缘层41与第二绝缘层42的设置，弹性地调整该第一电极区311与第二电极区321的数量，以配合产品的种类或后续对位组装制程的需求。
综上所述，本发明发光组件藉由该绝缘单元4的设置，可于后续电性连接于该外部电路板5时，防止因锡膏52溢流而相互接触所造成组件短路的问题，兼顾高制程良率、组件信赖性，以及低成本等优势。因此，确实能达到本发明的目的。
以上所述，仅为本发明的实施例而已，不能以此限定本发明实施的范围，凡是依本发明权利要求及专利说明书内容所作的简单的等效变化与修饰，皆仍属本发明专利涵盖的范围内。

Claims (7)

1.一种发光组件，其特征在于，包含：
一发光单元，包括一发光体与一封装胶体，所述发光体以电致发光产生光能，所述发光体具有一上表面、一下表面，及一连接所述上表面与所述下表面的一周面，且所述封装胶体包覆所述发光体的所述周面及所述上表面，并暴露出所述下表面；
一电极单元，包括一第一电极与一第二电极，所述第一电极、所述第二电极分别形成于所述发光体未形成有所述封装胶体的所述下表面上；及
一绝缘单元，形成于所述发光体的所述下表面上，所述绝缘单元包括位于所述第一电极与所述第二电极之间的一第一绝缘层，所述第一绝缘层的一下表面凸出于所述第一电极的一下表面及所述第二电极的一下表面。
2.根据权利要求1所述的发光组件，其特征在于，所述绝缘单元还包括一第二绝缘层，且所述第二绝缘层与所述第一绝缘层连接，并将所述第一电极与所述第二电极分别区隔成二个第一电极区与二个第二电极区。
3.根据权利要求2所述的发光组件，其特征在于，所述绝缘单元还包括一第三绝缘层，所述第三绝缘层连接并环绕所述第一绝缘层及所述第二绝缘层，所述绝缘单元暴露出所述第一电极的所述第一电极区与所述第二电极的所述第二电极区。
4.根据权利要求1所述的发光组件，其特征在于，所述绝缘单元还包括一第三绝缘层，所述第三绝缘层连接并环绕所述第一绝缘层，所述绝缘单元暴露出所述第一电极与所述第二电极。
5.根据权利要求1所述的发光组件，其特征在于，所述发光单元还包括一透光基板，所述透光基板对应形成于所述发光体的所述上表面的上方，并与所述封装胶体的上表面连接。
6.根据权利要求1所述的发光组件，其特征在于，所述发光体具有一发光层、一N型半导体及一P型半导体，所述发光层位于所述N型半导体及所述P型半导体之间，所述第一电极与所述第二电极分别电性连接于所述N型半导体及所述P型半导体。
7.根据权利要求1所述的发光组件，其特征在于，所述绝缘单元的材料包括环氧树脂、光阻、塑料、二氧化硅、硅树脂，或前述其中任意组合。
CN201610089089.2A 2015-02-17 2016-02-17 发光组件 Expired - Fee Related CN105895792B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562116923P 2015-02-17 2015-02-17
US62/116,923 2015-02-17

Publications (2)

Publication Number Publication Date
CN105895792A CN105895792A (zh) 2016-08-24
CN105895792B true CN105895792B (zh) 2020-03-10

Family

ID=56622502

Family Applications (9)

Application Number Title Priority Date Filing Date
CN201911295322.2A Pending CN111081839A (zh) 2015-02-17 2016-02-17 发光元件
CN201610089089.2A Expired - Fee Related CN105895792B (zh) 2015-02-17 2016-02-17 发光组件
CN201610089246.XA Pending CN105895763A (zh) 2015-02-17 2016-02-17 发光二极管芯片
CN201610089248.9A Pending CN105895652A (zh) 2015-02-17 2016-02-17 高压发光二极管及其制造方法
CN201610088344.1A Active CN105895774B (zh) 2015-02-17 2016-02-17 发光元件
CN201911295478.0A Pending CN110993766A (zh) 2015-02-17 2016-02-17 发光元件
CN201911296398.7A Pending CN111081840A (zh) 2015-02-17 2016-02-17 发光元件
CN201610089098.1A Pending CN105895762A (zh) 2015-02-17 2016-02-17 发光组件
CN201610089097.7A Pending CN105895790A (zh) 2015-02-17 2016-02-17 发光元件及其制作方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201911295322.2A Pending CN111081839A (zh) 2015-02-17 2016-02-17 发光元件

Family Applications After (7)

Application Number Title Priority Date Filing Date
CN201610089246.XA Pending CN105895763A (zh) 2015-02-17 2016-02-17 发光二极管芯片
CN201610089248.9A Pending CN105895652A (zh) 2015-02-17 2016-02-17 高压发光二极管及其制造方法
CN201610088344.1A Active CN105895774B (zh) 2015-02-17 2016-02-17 发光元件
CN201911295478.0A Pending CN110993766A (zh) 2015-02-17 2016-02-17 发光元件
CN201911296398.7A Pending CN111081840A (zh) 2015-02-17 2016-02-17 发光元件
CN201610089098.1A Pending CN105895762A (zh) 2015-02-17 2016-02-17 发光组件
CN201610089097.7A Pending CN105895790A (zh) 2015-02-17 2016-02-17 发光元件及其制作方法

Country Status (3)

Country Link
US (10) US20160240751A1 (zh)
CN (9) CN111081839A (zh)
TW (12) TWI583019B (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
CN107768495A (zh) 2016-08-18 2018-03-06 新世纪光电股份有限公司 微型发光二极管及其制造方法
CN108231974B (zh) 2016-12-21 2022-09-02 日亚化学工业株式会社 发光装置的制造方法
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
CN108336075B (zh) * 2017-01-20 2020-03-27 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块及其成形方法
US10529780B2 (en) * 2017-02-28 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US10497845B2 (en) 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
KR102453678B1 (ko) * 2018-02-20 2022-10-11 에피스타 코포레이션 발광소자 및 그의 제작방법
CN108550679A (zh) * 2018-04-16 2018-09-18 绍兴职业技术学院 一种白光数码管显示器件及其封装工艺
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
TWI771664B (zh) * 2019-03-21 2022-07-21 晶元光電股份有限公司 發光元件
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN215989229U (zh) * 2020-02-10 2022-03-08 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
CN115917767A (zh) * 2020-07-16 2023-04-04 苏州晶湛半导体有限公司 半导体结构及其制作方法
KR102721854B1 (ko) * 2020-11-26 2024-10-24 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
KR20220095289A (ko) * 2020-12-29 2022-07-07 삼성전자주식회사 발광소자 패키지
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN113871518A (zh) * 2021-09-27 2021-12-31 京东方科技集团股份有限公司 发光器件和显示基板
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1797798A (zh) * 2004-12-28 2006-07-05 中华映管股份有限公司 发光二极管
CN102074636A (zh) * 2009-11-19 2011-05-25 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
CN102800775A (zh) * 2011-05-27 2012-11-28 Lg伊诺特有限公司 发光器件和具有该发光器件的发光设备
CN104157769A (zh) * 2013-05-13 2014-11-19 新世纪光电股份有限公司 发光二极管封装结构

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
EP0926744B8 (en) * 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
TWI281269B (en) * 2003-12-02 2007-05-11 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
JP4976849B2 (ja) * 2004-07-12 2012-07-18 ローム株式会社 半導体発光素子
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO2007072967A1 (en) * 2005-12-19 2007-06-28 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
KR20090085594A (ko) * 2006-10-05 2009-08-07 미쓰비시 가가꾸 가부시키가이샤 ＧａＮ 계 ＬＥＤ 칩을 사용하여 이루어지는 발광 장치
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI338383B (en) * 2006-12-18 2011-03-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8552444B2 (en) * 2007-11-19 2013-10-08 Panasonic Corporation Semiconductor light-emitting device and manufacturing method of the same
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
US8637888B2 (en) * 2009-12-11 2014-01-28 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
KR20170091167A (ko) * 2010-02-09 2017-08-08 니치아 카가쿠 고교 가부시키가이샤 발광 장치
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
US20130168721A1 (en) * 2010-08-24 2013-07-04 Panasonic Corporation Light emitting device
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI435471B (zh) * 2010-11-16 2014-04-21 Epistar Corp 發光二極體晶粒及其製法
US20140009905A1 (en) * 2010-12-16 2014-01-09 Sharp Kabushiki Kaisha Fluorescent substrate, display apparatus, and lighting apparatus
US9136432B2 (en) * 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Ｌｅｄ封裝件及其製法
JP2015531995A (ja) * 2012-07-10 2015-11-05 東芝テクノセンター株式会社 発光ダイオード装置およびその製造方法
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102931314B (zh) * 2012-09-29 2015-02-11 安徽三安光电有限公司 一种防止金属迁移的半导体发光器件
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP5611492B1 (ja) * 2012-12-10 2014-10-22 シチズンホールディングス株式会社 Ｌｅｄ装置及びその製造方法
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子（广州）有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光（北京）科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1797798A (zh) * 2004-12-28 2006-07-05 中华映管股份有限公司 发光二极管
CN102074636A (zh) * 2009-11-19 2011-05-25 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
CN102800775A (zh) * 2011-05-27 2012-11-28 Lg伊诺特有限公司 发光器件和具有该发光器件的发光设备
CN104157769A (zh) * 2013-05-13 2014-11-19 新世纪光电股份有限公司 发光二极管封装结构

Also Published As

Publication number Publication date
CN105895763A (zh) 2016-08-24
TW201703279A (zh) 2017-01-16
TWI583019B (zh) 2017-05-11
TW201703293A (zh) 2017-01-16
CN105895774A (zh) 2016-08-24
TW201631806A (zh) 2016-09-01
CN111081839A (zh) 2020-04-28
TWI692127B (zh) 2020-04-21
TW201631795A (zh) 2016-09-01
TWI677112B (zh) 2019-11-11
US20180019232A1 (en) 2018-01-18
TW201631799A (zh) 2016-09-01
CN105895792A (zh) 2016-08-24
US20190214374A1 (en) 2019-07-11
CN105895790A (zh) 2016-08-24
US20160247788A1 (en) 2016-08-25
US20160240732A1 (en) 2016-08-18
CN105895652A (zh) 2016-08-24
TWI697139B (zh) 2020-06-21
CN105895774B (zh) 2020-01-14
US20180190627A1 (en) 2018-07-05
US20160240741A1 (en) 2016-08-18
US20160247982A1 (en) 2016-08-25
TWI636589B (zh) 2018-09-21
US20160240751A1 (en) 2016-08-18
CN110993766A (zh) 2020-04-10
CN105895762A (zh) 2016-08-24
US20180182742A1 (en) 2018-06-28
US20170323870A1 (en) 2017-11-09
TW201703295A (zh) 2017-01-16
TW201631802A (zh) 2016-09-01
TW201631794A (zh) 2016-09-01
TW201943100A (zh) 2019-11-01
CN111081840A (zh) 2020-04-28
TW201707244A (zh) 2017-02-16
TW201834271A (zh) 2018-09-16
TW201631791A (zh) 2016-09-01

Similar Documents

Publication Publication Date Title
CN105895792B (zh) 发光组件
US10177283B2 (en) LED packages and related methods
US8143634B2 (en) Light emitting diode package with a phosphor substrate
JP2012510153A (ja) 発光素子パッケージ
KR20120094279A (ko) 발광소자 패키지 및 그 제조방법
CN104798214A (zh) 发光装置及包括该发光装置的电子设备
TW201511347A (zh) 發光二極體封裝結構及其製造方法
US9537019B2 (en) Semiconductor device
US20140319564A1 (en) Light emitting diode package and method for manucfacturing same
TWI536617B (zh) 發光二極體燈條及其製造方法
EP1900040B1 (en) Light emitting diode and method of fabricating the same
JP2015015404A (ja) Ｌｅｄモジュール及びそれを備える照明装置
JP2010153861A (ja) 発光ダイオードパッケージ構造
KR101775428B1 (ko) 발광 소자 패키지 및 그 제조 방법
US8791493B2 (en) Light emitting diode package and method for manufacturing the same
US9041022B2 (en) Light emitting diode package and method for manufacturing the same
KR20120050283A (ko) Ｌｅｄ 패키지
TWI514051B (zh) 背光結構及其製造方法
US20150171296A1 (en) Light emitting package and carrier structure therefor
JP2016018990A (ja) パッケージ構造及びその製法並びに搭載部材
KR100650263B1 (ko) 발광 소자 패키지 및 그의 제조 방법
JP2015018847A (ja) Ｌｅｄモジュール及びそれを備える照明装置
TWI521745B (zh) 發光二極體封裝結構及其製造方法
JP2013187269A (ja) 光半導体装置及びその製造方法
KR20080087405A (ko) Ｌｅｄ 패키지 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200310

CF01 Termination of patent right due to non-payment of annual fee