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TW201631795A - 發光元件 - Google Patents

發光元件 Download PDF

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Publication number
TW201631795A
TW201631795A TW105104564A TW105104564A TW201631795A TW 201631795 A TW201631795 A TW 201631795A TW 105104564 A TW105104564 A TW 105104564A TW 105104564 A TW105104564 A TW 105104564A TW 201631795 A TW201631795 A TW 201631795A
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Taiwan
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electrode
semiconductor layer
light
conducting structure
current conducting
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TW105104564A
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English (en)
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郭祐禎
蘭彥廷
黃靖恩
賴騰憲
康凱舜
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新世紀光電股份有限公司
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Publication of TW201631795A publication Critical patent/TW201631795A/zh

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Abstract

一種發光元件，包括一磊晶結構、一第一電極、一電流傳導結構以及一第二電極。磊晶結構包括一基板、一第一半導體層 、一發光層以及一第二半導體層。第一電極設置於第一半導體層上。電流傳導結構設置於第一半導體層上，其中電流傳導結構與第一電極之間無實體連接，且電流傳導結構與第一電極經由第一半導體層形成電性連接。第二電極設置於第二半導體層上。

Description

發光元件
本發明關於一種發光元件，尤指一種可有效提高發光效率之發光元件。
請參閱第1圖，第1圖為先前技術之發光元件1的俯視示意圖。如第1圖所示，發光元件1包括一磊晶結構10、一N型電極12、一導電層14以及一P型電極16，其中磊晶結構10包括一N型半導體層18以及一P型半導體層20。一般而言，磊晶結構10另包括一發光層（未顯示），介於N型半導體層18與P型半導體層20之間。N型電極12設置於N型半導體層18上，導電層14設置於P型半導體層20上，且P型電極16設置於導電層14上。P型電極16具有一延伸部160，且延伸部160朝N型電極12之方向延伸。
當在N型電極12與P型電極16之間施加電壓時，電流自P型電極16流入，流經P型半導體層20、發光層、N型半導體層18，最後經N型電極12流出。然而，電流在流動過程中會趨向於尋找電阻最小的路徑。如第1圖所示，P型電極16之延伸部160較接近N型電極12，因此延伸部160的導電路徑的總電阻比P型電極16其它位置的總電阻小，使得大部分的電流會選擇總電阻較小的延伸部160進行流動，進而在延伸部160造成電流聚集（current crowding）效應。換言之，電流會趨向於從更接近N型電極12的位置進入N型半導體層18，因此在距離N型電極12較遠的位置流入發光層的電流強度較小，其發光強度不及接近於N型電極12的區域。此會造成發光元件1的發光亮度分佈不均勻，進而降低發光元件1的發光效率。
本發明提供一種可有效增加電流分佈均勻性之發光元件，以解決上述問題。
根據一實施例，本發明之發光元件包括一磊晶結構、一第一電極、一電流傳導結構以及一第二電極。磊晶結構包括一基板、一第一半導體層 、一發光層以及一第二半導體層。第一電極設置於第一半導體層上。電流傳導結構設置於第一半導體層上，其中電流傳導結構與第一電極之間無實體連接，且電流傳導結構與第一電極經由第一半導體層形成電性連接。第二電極設置於第二半導體層上。
綜上所述，本發明係於第一半導體層上增設與第一電極之間無實體連接之電流傳導結構，且電流傳導結構與第一電極係經由第一半導體層形成電性連接。藉此，即可使自第二電極流入的電流均勻擴散（current spreading），進而提高發光元件的發光效率。
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。
請參閱第2圖以及第3圖，第2圖為根據本發明第一實施例之發光元件3的俯視示意圖，第3圖為第2圖中的發光元件3沿X-X線的剖面示意圖。如第2圖與第3圖所示，發光元件3包括一磊晶結構30、一第一電極32、一導電層34以及一第二電極36，其中磊晶結構30包括一基板38、一第一半導體層40、一發光層42以及一第二半導體層44。於實際應用中，發光元件3可為發光二極體（light emitting diode，LED）。第一半導體層40位於基板38上，發光層42位於第一半導體層40上，且第二半導體層44位於發光層42上。基板38之材料可為藍寶石，但不以此為限。第一電極32設置於第一半導體層40上，導電層34設置於第二半導體層44上，且第二電極36設置於導電層34上。第一半導體層40 可為N型半導體層（例如，N型氮化鎵層），且第二半導體層44可為P型半導體層（例如，P型氮化鎵層）。此時，第一電極32即為N型電極，且第二電極36即為P型電極。導電層34之材料可為氧化銦錫（Indium Tin Oxide，ITO）、氧化鋅（ZnO）或其它導電材料。此外，發光元件3可另包括一電流阻擋層（current block layer，CBL）46，設置於第二半導體層44與第二電極36之間，用以提供電流阻擋作用，以改善發光元件3的發光效率和輸出光功率。
如第2圖所示，發光元件3另包括一電流傳導結構48。電流傳導結構48設置於第一半導體層40上，其中電流傳導結構48與第一電極32之間無實體連接，且電流傳導結構48與第一電極32經由第一半導體層40形成電性連接。於此實施例中，第二電極36可具有二相對延伸部360，且電流傳導結構48可設置於二相對延伸部360之間。電流傳導結構48可呈長條形且平行延伸部360，但不以此為限。此外，電流傳導結構48之電阻小於第一半導體層40之電阻。於實際應用中，電流傳導結構48之材料可為金、銀或其它低電阻導電材料，使得電流傳導結構48之電阻小於第一半導體層40之電阻。藉此，自第二電極36流入的電流即會均勻擴散流經第二半導體層44、發光層42、第一半導體層40，最後經第一電極32流出，減緩延伸部360尾端（亦即，延伸部360靠近第一電極32之一端）所造成的電流聚集（current crowding）效應，進而提高發光元件3的發光效率。
如第2圖與第3圖所示，當電流傳導結構48與第一電極32投影於基板38上時，電流傳導結構48與第一電極32之間具有一第一最短投影距離D1。較佳地，第一最短投影距離D1可小於或等於發光元件3之一長邊長度L的三分之一，以有效增進電流均勻擴散（current spreading）。
當電流傳導層(結構)48與第二電極36投影於基板38上時，電流傳導層(結構)48與第二電極36之間具有一第二最短投影距離D2。較佳地，第二最短投影距離D2可小於或等於發光元件3之一長邊長度L的三分之一，以有效增進電流均勻擴散。
如第2圖與第3圖所示，當電流傳導結構48、第一電極32與第二電極36投影於基板38上時，電流傳導結構48與第一電極32之間具有一第一最短投影距離D1，且第一電極32與第二電極36之間具有一第三最短投影距離D3。較佳地，第一最短投影距離D1可小於第三最短投影距離D3，以有效增進電流均勻擴散。
配合第2圖，請參閱第4圖，第4圖為根據本發明第二實施例之發光元件5的俯視示意圖。發光元件5與上述的發光元件3的主要不同之處在於，發光元件5之電流傳導結構48設置於第一半導體層40之邊緣，且第二電極36具有單一延伸部360，如第4圖所示。
配合第4圖，請參閱第5圖，第5圖為根據本發明第三實施例之發光元件6的俯視示意圖。發光元件6與上述的發光元件5的主要不同之處在於，發光元件6包括二電流傳導結構48，且二電流傳導結構48分別設置於第一半導體層40之相對二邊緣，如第5圖所示。
配合第4圖，請參閱第6圖，第6圖為根據本發明第四實施例之發光元件7的俯視示意圖。發光元件7與上述的發光元件5的主要不同之處在於，發光元件7之電流傳導結構48係呈方形且設置於第一半導體層40之邊緣，如第6圖所示。
配合第4圖，請參閱第7圖，第7圖為根據本發明第五實施例之發光元件8的俯視示意圖。發光元件8與上述的發光元件5的主要不同之處在於，發光元件8之電流傳導結構48係呈U字形且設置於第一半導體層40之邊緣，如第7圖所示。
配合第7圖，請參閱第8圖，第8圖為根據本發明第六實施例之發光元件9的俯視示意圖。發光元件9與上述的發光元件8的主要不同之處在於，發光元件9之U字形電流傳導結構48的開口方向與發光元件8之U字形電流傳導結構48的開口方向相反，如第8圖所示。
綜上所述，本發明係於第一半導體層上增設與第一電極之間無實體連接之電流傳導結構，且電流傳導結構與第一電極係經由第一半導體層形成電性連接。藉此，即可使自第二電極流入的電流均勻擴散，進而提高發光元件的發光效率。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1、3、5、6、7、8、9‧‧‧發光元件
10、30‧‧‧磊晶結構
12‧‧‧N型電極
14、34‧‧‧導電層
16‧‧‧P型電極
18‧‧‧N型半導體層
20‧‧‧P型半導體層
32‧‧‧第一電極
36‧‧‧第二電極
38‧‧‧基板
40‧‧‧第一半導體層
42‧‧‧發光層
44‧‧‧第二半導體層
46‧‧‧電流阻擋層
48‧‧‧電流傳導結構
160、360‧‧‧延伸部
D1‧‧‧第一最短投影距離
D2‧‧‧第二最短投影距離
D3‧‧‧第三最短投影距離
L‧‧‧長邊長度
X-X‧‧‧剖面線
第1圖為先前技術之發光元件的俯視示意圖。 第2圖為根據本發明第一實施例之發光元件的俯視示意圖。 第3圖為第2圖中的發光元件沿X-X線的剖面示意圖。 第4圖為根據本發明第二實施例之發光元件的俯視示意圖。 第5圖為根據本發明第三實施例之發光元件的俯視示意圖。 第6圖為根據本發明第四實施例之發光元件的俯視示意圖。 第7圖為根據本發明第五實施例之發光元件的俯視示意圖。 第8圖為根據本發明第六實施例之發光元件的俯視示意圖。
3‧‧‧發光元件
30‧‧‧磊晶結構
32‧‧‧第一電極
34‧‧‧導電層
36‧‧‧第二電極
40‧‧‧第一半導體層
44‧‧‧第二半導體層
46‧‧‧電流阻擋層
48‧‧‧電流傳導結構
360‧‧‧延伸部
D1‧‧‧第一最短投影距離
D2‧‧‧第二最短投影距離
D3‧‧‧第三最短投影距離
L‧‧‧長邊長度
X-X‧‧‧剖面線

Claims (10)

  1. 一種發光元件，包括： 一磊晶結構，包括一第一半導體層、一發光層以及一第二半導體層； 一第一電極，設置於該第一半導體層上； 一電流傳導結構，設置於該第一半導體層上，該電流傳導結構與該第一電極之間無實體連接，該電流傳導結構與該第一電極經由該第一半導體層形成電性連接；以及 一第二電極，設置於該第二半導體層上。
  2. 如請求項1所述之發光元件，其中該電流傳導結構之電阻小於該第一半導體層之電阻。
  3. 如請求項1所述之發光元件，其中當該電流傳導結構與該第一電極投影於該基板上時，該電流傳導結構與該第一電極之間具有一第一最短投影距離，該第一最短投影距離小於或等於該發光元件之一長邊長度的三分之一。
  4. 如請求項1所述之發光元件，其中當該電流傳導結構與該第二電極投影於該基板上時，該電流傳導結構與該第二電極之間具有一第二最短投影距離，該第二最短投影距離小於或等於該發光元件之一長邊長度的三分之一。
  5. 如請求項1所述之發光元件，其中當該電流傳導結構、該第一電極與該第二電極投影於該基板上時，該電流傳導結構與該第一電極之間具有一第一最短投影距離，該第一電極與該第二電極之間具有一第三最短投影距離，該第一最短投影距離小於該第三最短投影距離。
  6. 如請求項1所述之發光元件，其中該電流傳導結構設置於該第一半導體層之至少一邊緣。
  7. 如請求項1所述之發光元件，其中該第二電極具有二相對延伸部，該電流傳導結構設置於該二相對延伸部之間。
  8. 如請求項1所述之發光元件，其中該第二電極具有至少一延伸部，至少部分該電流傳導結構平行該至少一延伸部。
  9. 如請求項1所述之發光元件，其中該電流傳導結構呈長條形、方形或U字形。
  10. 如請求項1所述之發光元件，更包括一電流阻擋層，設置於該第二半導體層與該第二電極之間。
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