CN105446032A - 液晶显示器 - Google Patents
液晶显示器 Download PDFInfo
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- CN105446032A CN105446032A CN201410751569.1A CN201410751569A CN105446032A CN 105446032 A CN105446032 A CN 105446032A CN 201410751569 A CN201410751569 A CN 201410751569A CN 105446032 A CN105446032 A CN 105446032A
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- data line
- pixel electrode
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- crystal display
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 75
- 239000010409 thin film Substances 0.000 claims abstract description 46
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Abstract
提供了一种液晶显示器,该液晶显示器能够通过防止数据线与像素电极之间的寄生电容的偏差来避免画面质量下降。该液晶显示器包括;数据线和选通线;补偿图案,其覆盖数据线;薄膜晶体管,其被设置在与数据线和选通线的交叉相邻的区域处;像素电极,其被设置在由所述交叉限定的像素区域中并且分别连接到薄膜晶体管;以及公共电极,其被设置为与像素电极交叠。各个补偿图案的一个边缘与像素电极间隔开预定距离。
Description
技术领域
本文献涉及液晶显示器,更具体地讲,涉及一种可通过防止数据线与像素电极之间的寄生电容的偏差来避免画面质量下降的液晶显示器。
背景技术
近年来,在各种类型的显示装置当中,液晶显示器由于诸如画面质量优异、重量轻和功耗低的特征而得以广泛使用。液晶显示器通过控制具有介电各向异性的液晶的透光率来显示图像。液晶显示器包括液晶面板以及用于驱动该液晶面板的驱动电路,在该液晶面板中液晶单元呈矩阵排列。
液晶面板包括薄膜晶体管阵列基板和滤色器阵列基板。薄膜晶体管阵列基板包括具有栅电极、半导体层、源电极和漏电极的薄膜晶体管、连接到该薄膜晶体管的像素电极以及与该像素电极相对地设置以与该像素电极形成电场的公共电极。滤色器阵列基板包括滤色器和黑色基底。
在液晶显示器中,以反转方式来驱动液晶面板以便防止液晶的劣化并改进显示质量。反转方法的示例包括帧反转法、行反转法、列反转法、点反转法、Z反转法等。
在这些反转方法中,Z反转法是按照列反转方式将像素信号供应给数据线的方法。在Z反转法中,薄膜晶体管和像素电极按照锯齿形图案交替地设置在数据线的左侧和右侧。即,Z反转法是列反转法的改进版本,其中按照列反转方式驱动电路,并且液晶面板的薄膜晶体管布置在各个数据线的反向上,以按照与点反转法相同的方式在屏幕上显示图像。Z反转法产生类似于点反转法的效果,并且使得功耗急剧降低。
以下,将参照图1描述现有技术的Z反转型液晶显示器。图1是示出现有技术的Z反转型液晶显示器的像素阵列的俯视平面图。
参照图1,现有技术的Z反转型液晶显示器的薄膜晶体管阵列基板包括被设置为彼此交叉的多条选通线G1和G2与多条数据线D1、D2和D3。
由选通线G1和G2与数据线D1、D2和D3的交叉限定像素区域。像素电极P1、P2、P3和P4分别设置在像素区域中。
薄膜晶体管TFT1、TFT2、TFT3和TFT4设置在选通线G1和G2与数据线D1、D2和D3的交叉区域处。薄膜晶体管TFT1、TFT2、TFT3和TFT4沿着数据线D1、D2和D3按照锯齿形图案交替地布置在左侧和右侧。因此,像素电极P1、P2、P3和P4也按照锯齿形图案布置。即,由于薄膜晶体管TFT1、TFT2、TFT3和TFT4以及像素电极P1、P2、P3和P4沿着数据线D1、D2和D3交替地布置在左侧和右侧,所以对于各个水平行,设置在由两个相邻数据线D1和D2或者D2和D3限定的相同列区域中的薄膜晶体管TFT1和TFT2或者TFT3和TFT4以及像素电极P1和P2或者P3和P4交替地连接到相邻数据线D1和D2或者D2和D3。
然而,在该Z反转型液晶显示器的薄膜晶体管阵列基板制造中,在用于形成数据线D1、D2和D3、源电极SE和漏电极DE的源/漏层形成工艺与用于形成像素电极P1、P2、P3和P4的像素电极层形成工艺之间可能存在工艺偏差。当这种工艺偏差引起源/漏层与像素电极层之间的偏移时,在像素电极P3和P4与数据线D1、D2和D3之间的寄生电容中生成差异。
以下,将参照图2详细描述由于工艺偏差而在寄生电容中生成差异。图2是用于说明由源/漏层与像素电极层之间的偏移引起的数据线与像素电极之间的寄生电容的变化的示图。图2中的(a)是示出在正常状态下形成的数据线D2与像素电极P1和P2的示图,图2中的(b)是示出像素电极P1和P2由于工艺偏差而向图的左侧偏移的示图,图2中的(c)是示出像素电极P1和P2由于工艺偏差而向图的右侧偏移的示图。
参照图2中的(a),数据线D2距左侧和右侧的像素电极P1和P2的距离相等,因此不存在由于从数据线D2至像素电极P1的距离与从数据线D2至像素电极P2的距离之间的差异而引起的寄生电容的偏差。
然而,如图2中的(b)和(c)所示,如果像素电极P由于工艺偏差而向一侧(例如,左侧或右侧)偏移,则在从数据线D2至像素电极P1的距离与从数据线D2至像素电极P2的距离之间生成差异。这由于从数据线D2至像素电极P1的距离与从数据线D2至像素电极P2的距离之间的差异而在寄生电容中生成偏差。
此外,在Z反转型液晶显示器中,设置在数据线D2的左侧和右侧的像素电极P1和P2被充入有具有相反极性的像素信号。因此,具有相反极性的数据线D2(-)与左侧像素电极P1(+)之间的电压偏差的量大于或小于具有相同极性的数据线D2(-)与右侧像素电极P2(-)之间的电压偏差的量。因此,这导致数据线D2(-)和左侧像素电极P1(+)之间的第一寄生电容与数据线D2(-)和右侧像素电极P2(-)之间的第二寄生电容之间的偏差更大。
数据线与像素电极之间的寄生电容的这种偏差导致通过Z反转驱动连接到相同数据线的像素区域中的跳变电压(kickbackvoltage)ΔVp的差异,从而导致画面质量下降(例如,残像(afterimage)或闪烁)。
因此,需要一种能够防止像素电极与数据线之间的寄生电容的偏差的液晶显示器。
发明内容
本文献的一方面在于提供一种能够通过防止数据线与像素电极之间的寄生电容的偏差来避免画面质量下降的液晶显示器。
本发明的示例性实施方式提供了一种液晶显示器,该液晶显示器包括:彼此交叉地布置的多条数据线和多条选通线;多个补偿图案,其分别覆盖所述数据线;多个薄膜晶体管,其被设置在与所述数据线和所述选通线的交叉相邻的区域处;多个像素电极,其被设置在由所述选通线与所述数据线的所述交叉限定的像素区域中并且分别连接到所述多个薄膜晶体管;以及公共电极,其被设置为与所述像素电极交叠,使得钝化膜插置在所述公共电极与所述像素电极之间,其中,各个所述补偿图案的一个边缘与所述像素电极间隔开预定距离。
所述补偿图案和所述像素电极由相同的材料制成。
所述数据线被设置在覆盖薄膜晶体管的栅电极的栅绝缘膜上,所述像素电极被设置在所述栅绝缘膜上,各个补偿图案与设置在其两侧上的像素电极的距离相等。
本发明的另一示例性实施方式提供了一种液晶显示器,该液晶显示器包括:彼此交叉地布置的多条数据线和多条选通线;多个薄膜晶体管,其被设置在与所述数据线和所述选通线的交叉相邻的区域处;一对补偿图案,其与各条数据线间隔开并且被布置在所述数据线的两侧;多个像素电极,其被设置在由所述选通线与所述数据线的所述交叉限定的像素区域中并且分别连接到所述薄膜晶体管;以及公共电极,其被设置为与所述像素电极交叠,使得钝化膜插置在所述公共电极与所述像素电极之间,其中,各个所述像素电极被形成为部分地覆盖所述一对补偿图案中的一个。
所述补偿图案和所述像素电极由相同的材料制成。
所述数据线被设置在覆盖薄膜晶体管的栅电极的栅绝缘膜上,所述数据线和所述一对补偿图案被设置在所述栅绝缘膜上,各条数据线与设置在其两侧的补偿图案的距离相等。
由于即使发生工艺偏差,数据线与布置在数据线的两侧的像素电极之间的距离也保持恒定,所以根据本发明的液晶显示器没有寄生电容的偏差,因此防止了诸如残像或闪烁的画面质量下降。
附图说明
附图被包括以提供对本发明的进一步理解,并且被并入本说明书并构成本说明书的一部分,附图示出了本发明的实施方式并与说明书一起用于说明本发明的原理。附图中:
图1是示出现有技术的Z反转型液晶显示器的像素阵列的俯视平面图;
图2是用于说明由源/漏层与像素电极层之间的移位引起的数据线与像素电极之间的寄生电容的变化的示图;
图3是示出根据本发明的示例性实施方式的液晶显示器的框图;
图4是示出根据本发明的示例性实施方式的液晶显示器的像素阵列的一个示例的电路图;
图5是示出根据本发明的第一示例性实施方式的液晶显示器的一个像素的俯视平面图;
图6是沿图5的线I-I’截取的截面图;
图7是示出根据本发明的第二示例性实施方式的液晶显示器的一个像素的俯视平面图;以及
图8是沿图7的线I-I’截取的截面图。
具体实施方式
以下,将参照附图详细描述本发明的示例性实施方式。贯穿说明书,相同的标号指示相同的组件。在以下描述中,如果现有的公知功能或配置的详细描述可能在不必要的细节方面使本发明模糊,则将省略它们。
将参照图3详细描述根据本发明的示例性实施方式的液晶显示器。图3是示出根据本发明的示例性实施方式的液晶显示器的框图。
参照图3,根据本发明的示例性实施方式的液晶显示器包括具有像素阵列10、源驱动IC12和定时控制器11的液晶显示面板。用于将光均匀地照射到液晶显示面板的背光单元可设置在液晶显示面板下面。
液晶显示面板包括面向彼此的上玻璃基板和下玻璃基板,液晶层插置在上玻璃基板与下玻璃基板之间。像素阵列10形成在液晶显示面板上。像素阵列10包括根据数据线与选通线的交叉结构按照矩阵格式排列的液晶单元,并且显示数据。数据线、选通线、薄膜晶体管TFT、连接到薄膜晶体管的液晶单元的像素电极以及连接到液晶单元的像素电极的存储电容器Cst形成在像素阵列的下玻璃基板上。像素阵列10的各个液晶单元通过被充入有数据电压的像素电极与被施加有公共电压的公共电极之间的电压差来驱动,并且通过调节透光率来显示数据。将参照图4详细描述像素阵列10的详细结构。
黑色基底、滤色器和公共电极形成在液晶显示面板的上玻璃基板上。在垂直电场驱动方式(例如,扭曲向列(TN)模式和垂直取向(VA)模式)中,公共电极形成在上玻璃基板上。在水平电场驱动方式(例如,面内切换(IPS)模式和边缘场开关(FFS)模式)中,公共电极2和像素电极1形成在下玻璃基板上。
偏振器分别附接到液晶显示面板的上玻璃基板和下玻璃基板。用于设定液晶的预倾角的取向层分别形成在上玻璃基板和下玻璃基板上。
除了TN模式、VA模式、IPS模式和FFS模式以外,本发明的液晶显示器还可按照任何液晶模式来实现。本发明的液晶显示器可按照包括透射型液晶显示器、折射-透射型液晶显示器和反射型液晶显示器的任何形式来实现。透射型液晶显示器和折射-透射型液晶显示器需要背光单元。背光单元可为直下型背光单元或边缘型背光单元。
源驱动IC12安装在TCP(载带封装)15上,通过TAB(载带自动结合)工艺结合到液晶显示面板的下玻璃基板,并连接到源PCB(印刷电路板)14。源驱动IC12可通过COG(玻璃上芯片)工艺附接到液晶显示面板的下玻璃基板上。源驱动IC12的各个数据输出通道一对一连接到像素阵列10的数据线。
各个源驱动IC12从定时控制器11接收数字视频数据。源驱动IC12响应于来自定时控制器11的源定时控制信号将数字视频数据转换为正/负数据电压,并通过输出通道将其供应给像素阵列10的数据线DL。源驱动IC12在定时控制器11的控制下将相反极性的数据电压供应给相邻数据线DL,并且对于一帧周期使供应给数据线DL的数据电压的极性保持相同。因此,如图4所示,源驱动IC12输出按照列反转方式反转极性的数据电压。
选通驱动电路13响应于来自定时控制器11的选通定时控制信号将选通脉冲(或扫描脉冲)顺序地供应给像素阵列的数据线GL。选通驱动电路13可安装在TCP上并通过TAB工艺结合到液晶显示面板的下玻璃基板,或者通过GIP(板内栅极)工艺与像素阵列10同时地直接形成在下玻璃基板上。选通驱动电路13可如图2所示设置在像素阵列10的两侧,或者设置在像素阵列10的一侧。
定时控制器11将从外部系统板接收的数字视频数据供应给源驱动器IC12。定时控制器11生成用于控制源驱动器IC12的操作定时的源定时控制信号以及用于控制选通驱动电路13的操作定时的选通定时控制信号。定时控制器11安装在控制PCB16上。控制PCB16通过诸如柔性印刷电路(FPC)或柔性扁平线缆(FFC)的柔性电路板17连接到源PCB14。
接下来,将参照图4描述根据本发明的示例性实施方式的液晶显示器的像素阵列。图4是示出根据本发明的示例性实施方式的液晶显示器的像素阵列10的一个示例的电路图。
参照图4,像素阵列10包括被布置为彼此交叉的m条数据线D1至Dm(其中m是正整数)和n条选通线G1至Gn、通过数据线D1至Dm与选通线G1至Gn的交叉设置的薄膜晶体管T11、T12、T13、…、T21、T22、T23、...以及包括像素电极P11、P12、P13、…、P21、P22、P23、…的液晶单元。薄膜晶体管T11、T12、T13、…、T21、T22、T23、...响应于选通脉冲将来自数据线D1至Dm的像素信号供应给液晶单元的像素电极P11、P12、P13、…、P21、P22、P23、…。
薄膜晶体管T11、T12、T13、…、T21、T22、T23、...和像素电极P11、P12、P13、…、P21、P22、P23、…沿着各条数据线D1至Dm按照锯齿形图案交替地布置在各条数据线的左侧和右侧。即,对于水平行LINE#1至LINE#n,设置在同一列中的薄膜晶体管和像素电极交替地连接到不同的相邻数据线。
例如,包括在第一列的第一水平行LINE#1中的薄膜晶体管T11和像素电极P11连接到数据线D1,包括在第一列的第二水平行LINE#2中的薄膜晶体管T21和像素电极P21连接到数据线D2,包括在第一列的第三水平行LINE#3中的薄膜晶体管T31和像素电极P31连接到数据线D1。
包括在第二列的第一水平行LINE#1中的薄膜晶体管T12和像素电极P12连接到数据线D2,包括在第二列的第二水平行LINE#2中的薄膜晶体管T22和像素电极P22连接到数据线D3,包括在第二列的第三水平行LINE#3中的薄膜晶体管T32和像素电极P32连接到数据线D2。
这样,连接到奇数选通线G1、G3、…的奇数水平行的薄膜晶体管T11、T12、T13、…、T31、T32、T33、…和像素电极P11、P12、P13、…、P31、P32、P33、…连接到左侧相邻数据线D1、D2和D3,连接到偶数选通线G2、G4、…的偶数水平行的薄膜晶体管T21、T22、T23、…和像素电极P21、P22、P23、…连接到右侧相邻数据线D2、D3和D4。
因此,奇数水平行LINE#1、LINE#3、…的像素电极P11、P12、P13、…、P31、P32、P33、…通过薄膜晶体管T11、T12、T13、…、T31、T32、T33、…从左侧相邻数据线D1、D2和D3充入像素信号。另一方面,偶数水平行LINE#2、LINE#4、…的像素电极P21、P22、P23、…通过薄膜晶体管T21、T22、T23、…从右侧相邻数据线D2、D3和D4充入像素信号。
如上所述,在根据本发明的示例性实施方式的液晶显示器中,相反极性的像素信号分别被输入到奇数数据线和偶数数据线中,并且它们的极性每一帧按照列反转方式反转。由于像素电极沿着被供应有像素信号的数据线通过列反转按照锯齿形图案设置,所以按照点反转方式驱动包括像素电极的液晶单元。
因此,根据本发明的示例性实施方式的液晶显示器可通过以点反转方式驱动液晶单元来实现改进的画面质量,并且通过以列反转方式将像素信号供应给数据线,与以点反转方式供应像素信号相比降低了功耗。
在根据本发明的示例性实施方式的液晶显示器中,覆盖数据线的补偿图案形成在各条数据线上距像素电极预定距离处,或者与像素电极部分地交叠的补偿图案形成在距数据线预定距离处。因此,即使数据线距一侧的像素电极的距离与数据线距另一侧的像素电极的距离之间存在差异,这也不会生成寄生电容的差异。
以下,将参照图5和图6更详细地描述被配置为不生成寄生电容的差异的根据本发明的第一示例性实施方式的液晶显示器。图5是示出根据本发明的第一示例性实施方式的液晶显示器的一个像素的俯视平面图。图6是沿图5的线I-I’截取的截面图。
参照图5和图6,根据本发明的第一示例性实施方式的液晶显示器包括形成在基板SUB上的选通线G1、与选通线G1交叉的数据线D2和D3、分别覆盖数据线D2和D3的补偿图案CP2和CP3、设置在由选通线G1与数据线D2和D3的交叉限定的各个单元区域中的薄膜晶体管T、连接到薄膜晶体管T的像素电极P12以及被设置为与像素电极P12交叠使得钝化膜PAS1插置在二者间的公共电极COM。
薄膜晶体管T包括从形成在基板SUB上的选通线G1延伸的栅电极G、形成在覆盖栅电极G的栅绝缘膜GI上的半导体有源层A以及形成在半导体有源层A上并且分离开以彼此面对以便暴露半导体层A的一部分的源电极S和漏电极D。
数据线D2和D3以及像素电极P11、P12和P13形成在栅绝缘膜GI上。
补偿图案CP2和CP3被形成为覆盖数据线D2和D3。各个补偿图案CP2或CP3距像素电极P11和P12以及P12和P13的距离相等。如图5和图6所示,补偿图案CP2和CP3以及像素电极P11、P12和P13利用诸如ITO(铟锡氧化物)、IZO(铟锌氧化物)或GZO(掺镓锌氧化物)的透明导电材料在同一工艺中形成。
在数据线形成工艺之后,即使像素电极由于像素电极形成工艺中的工艺偏差而偏移,由于补偿图案覆盖数据线(即,补偿图案和数据线电连接)并且像素电极和补偿图案同时形成,所以补偿图案与设置在补偿图案两侧的像素电极之间的距离保持恒定。
如上所述,由于即使发生工艺偏差,数据线与布置在数据线两侧的像素电极之间的距离也保持恒定,所以根据本发明的第一示例性实施方式的液晶显示器没有寄生电容的偏差,因此防止了诸如残像或闪烁的画面质量下降。
接下来,将参照图7和图8更详细地描述被配置为不生成寄生电容的差异的根据本发明的第二示例性实施方式的液晶显示器。图7是示出根据本发明的第二示例性实施方式的液晶显示器的一个像素的俯视平面图。图8是沿图7的线I-I’截取的截面图。
参照图7和图8,根据本发明的第二示例性实施方式的液晶显示器包括形成在基板SUB上的选通线G1、与选通线G1交叉的数据线D2和D3、形成在由选通线G1与数据线D2和D3的交叉限定的各个单元区域中的薄膜晶体管T、分别与数据线D2和D3间隔开并且布置在数据线D2和D3的两侧的两对补偿图案CP2a和CP2b以及CP3a和CP3b、连接到薄膜晶体管T的像素电极P12以及被设置为与像素电极P12交叠的公共电极COM。
薄膜晶体管T包括从形成在基板SUB上的选通线G1延伸的栅电极G、形成在覆盖栅电极G的栅绝缘膜GI上的半导体有源层A以及形成在半导体有源层A上并且分离开以彼此面对以暴露半导体层A的一部分的源电极S和漏电极D。
数据线D2和D3以及布置在数据线D2和D3的两侧的两对补偿图案CP2a和CP2b以及CP3a和CP3b形成在栅绝缘膜GI上。各条数据线D2或D3距一对补偿图案CP2a和CP2b或者CP3a和CP3b的距离相等。
布置在数据线D2两侧的像素电极P11和P12中的每一个被形成为覆盖布置在数据线D2两侧的一对补偿图案CP2a和CP2b的至少一部分。
各条数据线D2或D3距一对补偿图案CP2a和CP2b或者CP3a和CP3b的距离相等。如图7和图8所示,补偿图案CP2和CP2b以及CP3a和CP3b以及数据线D2和D3利用导电金属材料在同一工艺中形成。
在形成数据线D2和D3以及补偿图案CP2a和CP2b以及CP3a和CP3b的工艺之后,即使像素电极由于像素电极形成工艺中的工艺偏差而偏移,由于像素电极覆盖补偿图案(即,像素电极和补偿图案电连接)并且数据线和补偿图案同时形成,所以数据线与设置在数据线两侧的补偿图案之间的距离保持恒定。
因此,由于即使发生工艺偏差,数据线与连接到布置在数据线两侧的像素电极的补偿图案之间的距离也保持恒定,所以根据本发明的第二示例性实施方式的液晶显示器没有寄生电容的偏差,因此防止了诸如残像或闪烁的画面质量下降。
从以上描述,本领域技术人员将容易理解,在不脱离本发明的技术构思的情况下可进行各种改变和修改。例如,尽管以具有特定像素阵列结构的Z反转型液晶显示器为例描述了本发明的示例性实施方式,本发明适用于由于工艺偏差而在数据线与像素电极之间的寄生电容中可能具有偏差的所有类型的液晶显示器。
Claims (6)
1.一种液晶显示器,该液晶显示器包括:
彼此交叉地布置的多条数据线和多条选通线;
多个补偿图案,其分别覆盖所述多条数据线;
多个薄膜晶体管,其被设置在与所述数据线和所述选通线的交叉相邻的区域处;
多个像素电极,其被设置在由所述选通线与所述数据线的所述交叉限定的像素区域中并且分别连接到所述多个薄膜晶体管;以及
公共电极,其被设置为与所述像素电极交叠,并且钝化膜插置在所述公共电极与所述像素电极之间,
其中,各个所述补偿图案的一个边缘与所述像素电极间隔开预定距离。
2.根据权利要求1所述的液晶显示器,其中,所述补偿图案和所述像素电极由相同的材料制成。
3.根据权利要求1所述的液晶显示器,其中,所述数据线被设置在覆盖所述薄膜晶体管的栅电极的栅绝缘膜上,所述像素电极被设置在所述栅绝缘膜上,各个所述补偿图案与设置在其两侧的所述像素电极的距离相等。
4.一种液晶显示器,该液晶显示器包括:
彼此交叉地布置的多条数据线和多条选通线;
多个薄膜晶体管,其被设置在与所述数据线和所述选通线的交叉相邻的区域处;
一对补偿图案,其与各条所述数据线间隔开并且被布置在所述数据线的两侧;
多个像素电极,其被设置在由所述选通线与所述数据线的所述交叉限定的像素区域中并且分别连接到所述薄膜晶体管;以及
公共电极,其被设置为与所述像素电极交叠,并且钝化膜插置在所述公共电极与所述像素电极之间,
其中,各个所述像素电极被形成为部分地覆盖所述一对补偿图案中的一个。
5.根据权利要求4所述的液晶显示器,其中,所述补偿图案和所述像素电极由相同的材料制成。
6.根据权利要求4所述的液晶显示器,其中,所述数据线被设置在覆盖所述薄膜晶体管的栅电极的栅绝缘膜上,所述数据线和所述一对补偿图案被设置在所述栅绝缘膜上,各条所述数据线与设置在其两侧的所述补偿图案的距离相等。
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