CN104393184B - 白光oled显示屏及其串联式白光有机发光二极管 - Google Patents
白光oled显示屏及其串联式白光有机发光二极管 Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 230000005525 hole transport Effects 0.000 claims description 26
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 claims description 10
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 claims description 10
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 9
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910002785 ReO3 Inorganic materials 0.000 claims description 3
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- 229910052792 caesium Inorganic materials 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 229910052701 rubidium Inorganic materials 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- FSEXLNMNADBYJU-UHFFFAOYSA-N 2-phenylquinoline Chemical compound C1=CC=CC=C1C1=CC=C(C=CC=C2)C2=N1 FSEXLNMNADBYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- CUVTWRNVGJFVMG-UHFFFAOYSA-N n-phenylcarbazol-9-amine Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1NC1=CC=CC=C1 CUVTWRNVGJFVMG-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供了一种串联式白光有机发光二极管，其包括依次层叠串联的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，第一发光单元出射蓝光，第二发光层出射黄光；或者第一发光单元出射白光；第二发光层出射白光；以及中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属作为电子传输材料以吸收中间电子传输层中的峰位大于490nm或小于440nm的光，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。
Description
技术领域
本发明涉及液晶显示器的技术领域，具体是涉及一种串联式白光有机发光二极管以及使用该串联式白光有机发光二极管的白光OLED显示屏。
背景技术
OLED即有机发光二极管(Organic Light-Emitting Diode)，具有自发光，高色饱和度，高对比度等优点，是下一代平板显示技术和柔性显示技术的核心。目前小尺寸OLED显示屏已经用于手机和平板电脑中，其成本已经接近液晶显示屏。然而大尺寸OLED显示屏还存在成本过高，寿命短等突出问题，影响了与大尺寸液晶显示屏的竞争。
目前最有希望应用于大尺寸OLED显示屏的技术路线是WOLED(白光OLED)+CF基板，它具有大幅提高产品良率的潜力，其中WOLED通常采用串联式WOLED。
串联式WOLED可以成倍的提高元件效率和寿命，是大尺寸OLED显示屏的核心技术。如何增强串联式WOLED的蓝光实现冷白光，是目前亟待解决的问题。
发明内容
本发明实施例提供一种白光OLED显示屏极及其串联式白光有机发光二极管，以解决现有技术中如何增强串联式WOLED的蓝光实现冷白光的技术问题。
为解决上述问题，本发明实施例提供了一种串联式白光有机发光二极管，其包括依次层叠串联的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，第一发光单元出射蓝光，第二发光层出射黄光；或者，第一发光单元出射白光，第二发光层出射白光；以及中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属作为电子传输材料以吸收中间电子传输层中的峰位大于490nm或小于440nm的光。
其中，第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层。
其中，阳极采用铟锡氧化物ITO，厚度为60-80nm；第一空穴传输层采用NPB，厚度为50-70nm；第一发光层采用DPVBi，厚度为20-30nm；第一电子传输层采用Bphen，厚度为8-12nm；中间电子传输层采用Bphen掺杂Li、Na、K、Rb或Cs，厚度为8-12nm；连接层采用HATCN，厚度为15-25nm；中间空穴传输层采用NPB，厚度为15-25nm；第二空穴传输层采用TCTA，厚度为8-12nm；第二发光层采用45％TCTA:45％Bphen:10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为20-30nm；第二电子传输层采用Bphen，厚度为35-45nm；阴极采用Al，厚度为90-110nm。
其中，阳极采用铟锡氧化物ITO，厚度为70nm；第一空穴传输层采用NPB，厚度为60nm；第一发光层采用DPVBi，厚度为25nm；第一电子传输层采用Bphen，厚度为10nm；中间电子传输层采用Bphen掺杂Li、Na、K、Rb或Cs，厚度为10nm；连接层采用HATCN，厚度为20nm；中间空穴传输层采用NPB，厚度为20nm；第二空穴传输层采用TCTA，厚度为10nm；第二发光层采用45％TCTA:45％Bphen:10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm；第二电子传输层采用Bphen，厚度为40nm；阴极采用Al，厚度为100nm。
其中，中间电子传输层还可采用碱土金属和稀土金属，碱土金属包括Ca、Sr或Ba；稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb。
其中，连接层还可采用MoO3、WO3、V2O5、ReO3。
其中，阴极还包括LiF层，厚度为1nm。
为解决上述问题，本发明另一技术方案是提供一种OLED显示屏，其包括多个中联在电路中且层叠于CF基板上的上述串联式白光有机发光二极管。
相对于现有技术，本发明提供的白光OLED显示屏极及其串联式白光有机发光二极管的中间电子传输层采用Bphen(4.7-二苯基-1,10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属作为电子传输材料以吸收中间电子传输层中的峰位大于490nm或小于440nm的光，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明串联式白光有机发光二极管的结构示意图；
图2是本发明优选实施例中串联式白光有机发光二极管的白光光谱图；
图3是本发明白光OLED显示屏的结构示意图。
具体实施方式
下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样的，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1，图1是本发明串联式白光有机发光二极管的结构简图。本发明的串联式白光有机发光二极管100包括依次层叠串联的阳极1、第一发光单元2、中间电荷产生层3、第二发光单元4以及阴极5。
本发明的连接层具有最低未占分子轨道，电子可以从中间空穴传输层的最高占有分子轨道跃迁到连接层的最低未占分子轨道形成偶极子，阳极1与阴极5加上正向电压后，偶极子在外电场作用下解离成空穴和电子，空穴在电场作用下传输至第二发光单元4，与从阴极5注入的电子复合发光，同理，电子在电场作用下传输至第一发光单元2，与从阳极1注入的空穴复合发光。
第一发光单元2包括第一空穴传输层21、第一发光层22以及第一电子传输层23，中间电荷产生层3包括中间电子传输层31、连接层32以及中间空穴传输层33，第二发光单元4包括第二空穴传输层41、第二发光层42以及第二电子传输层43，阴极5包括第一阴极层51，第二阴极层52，在其他实施例中，阴极5也可以为第一阴极层51，不包含第二阴极层52。
本发明的第一发光单元2出射蓝光，第二发光层42出射黄光，当然在其它实施例中，也可以是第一发光单元2、第二发光层42均出射白光，其可根据实际需要的出射光选用材料。
本发明的中间电子传输层31采用Bphen(4.7-二苯基-1,10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属作为电子传输材料以吸收中间电子传输层31中的峰位大于490nm或小于440nm的光。
本发明的串联式白光有机发光二极管各层的材料成分及厚度范围为：阳极1可采用铟锡氧化物ITO，厚度为60-80nm，第一空穴传输层21采用NPB(N,N’-二(1-萘基)-N,N’-二苯基-1,1’-联苯-4,4’-二胺)，厚度为50-70nm；第一发光层22采用DPVBi[4,4’－双(2,2－二苯基乙烯基)联苯]，厚度为20-30nm，第一电子传输层23采用Bphen，厚度为8-12nm，中间电子传输层31采用Bphen掺杂Li、Na、K、Rb或Cs，厚度为8-12nm，连接层32采用HATCN(六腈六氮杂苯并菲)，厚度为15-25nm，中间空穴传输层33采用NPB，厚度为15-25nm，第二空穴传输层41采用TCTA(4，4′，4〃-三(N-咔唑基)苯胺)，厚度为8-12nm；第二发光层42采用45％TCTA:45％Bphen:10％Ir(ppy)2tmd[iridium(III)bis(2phenylquinoline)tetramethylheptadionate]：0.2％Ir(mphmq)2(tmd)[Iridium(III)bis(4-methyl-2-(3,5-dimethylphenyl)quinolinato-N,C2′)tetra-me thylheptadionate]，厚度为20-30nm，第二电子传输层43采用Bphen，厚度为35-45nm，第一阴极层51采用Al，厚度为90-110nm，采用上述方案，只要中间电子传输层31中Bphen掺杂有逸出功为低于3eV的活泼金属作为电子传输材料，则会吸收中间电子传输层31中的峰位大于490nm或小于440nm的光，即减少对蓝光的吸收，实现冷白光。
在优选的实施例中，串联式白光有机发光二极管的阳极1采用铟锡氧化物ITO，厚度为70nm，第一空穴传输层21采用NPB，厚度为60nm；第一发光层22采用DPVBi，厚度为25nm；第一电子传输层23采用Bphen，厚度为10nm，中间电子传输层31采用Bphen掺杂Li、Na、K、Rb或Cs，厚度为10nm，连接层32采用HATCN，厚度为20nm，中间空穴传输层33采用NPB，厚度为20nm，第二空穴传输层41采用TCTA，厚度为10nm；第二发光层42采用45％TCTA:45％Bphen:10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm，第二电子传输层43采用Bphen，厚度为40nm，第一阴极5层采用Al，厚度为100nm，采用上述方案，能有效地吸收中间电子传输层31中的峰位大于490nm以及小于440nm的电子传输材料，即减少对蓝光的吸收，实现冷白光，请参阅图2，图2是本发明优选实施例中串联式白光有机发光二极管的白光光谱图，图为通电后的串联式白光有机发光二极管的白光光谱的波长与强度图，具体地在各成份以及参数如上述，不同的仅是第一空穴传输层21的厚度，具体分别为60nm、80nm，由图可知，中间电子传输层31采用Bphen掺杂Li、Na、K、Rb或Cs能有效地吸收中间电子传输层31中的峰位大于490nm以及小于440nm的电子传输材料，即避开蓝光的吸收，从而增强串联式白光有机发光二极管蓝光实现冷白光的目的。
本发明的中间电子传输层31还可采用碱土金属和稀土金属，碱土金属包括Ca、Sr或Ba；稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb，连接层32还可采用MoO3、WO3、V2O5、ReO3，阴极5进一步包括第二阴极层52，其所述采用的材料为LiF，厚度为1nm。
请参阅图3，图3是本发明白光OLED显示屏的结构示意图，本发明的白光OLED显示屏200包括电源201、CF基板202以及上述的串联式白光有机发光二极管100，串联式白光有机发光二极管100发出的白光通过CF基板202出射不同颜色的光。
本发明提供的白光OLED显示屏极及其串联式白光有机发光二极管的中间电子传输层31采用Bphen(4.7-二苯基-1,10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属作为电子传输材料以吸收中间电子传输层31中的峰位大于490nm或小于440nm的光，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。
以上仅为本发明的一种实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。
Claims (2)
1.一种串联式白光有机发光二极管，其特征在于，包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，
所述第一发光单元出射蓝光，所述第二发光单元出射黄光；
所述中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属作为电子传输材料以吸收所述中间电子传输层中的峰位大于490nm或小于440nm的光，避开蓝光的吸收，增强串联式白光有机发光二极管的蓝光，实现出射冷白光；
所述阴极包括第一阴极层和第二阴极层，所述第二阴极层和所述第一阴极依次层叠在所述第二发光单元上，所述第一阴极层采用Al，所述第二阴极层采用LiF，厚度为1nm；
所述第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；
所述第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层；
所述阳极采用铟锡氧化物ITO，厚度为70nm；
所述第一空穴传输层采用NPB，厚度为60nm；
所述第一发光层采用DPVBi，厚度为25nm；
所述第一电子传输层采用Bphen，厚度为10nm；
所述中间电子传输层采用Bphen掺杂Rb，厚度为10nm；
所述连接层采用HATCN，厚度为20nm；
所述中间空穴传输层采用NPB，厚度为20nm；
所述第二空穴传输层采用TCTA，厚度为10nm；
所述第二发光层采用TCTA:Bphen:Ir(ppy)2tmd：Ir(mphmq)2(tmd)，厚度为25nm；
所述第二电子传输层采用Bphen，厚度为40nm；
所述阴极采用Al，厚度为100nm；
所述连接层还可采用V2O5、ReO3。
2.一种白光OLED显示屏，其特征在于，包括层叠于CF基板上的权利要求1所述的串联式白光有机发光二极管。
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| US14/404,709 US20160351809A1 (en) | 2014-11-18 | 2014-11-25 | White-light oled display panel and the serially-connected white-light oled thereof |
| PCT/CN2014/092126 WO2016078102A1 (zh) | 2014-11-18 | 2014-11-25 | 白光oled显示屏及其串联式白光有机发光二极管 |
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| CN105185917B (zh) * | 2015-08-07 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种有机电致发光显示器件及显示装置 |
| CN107195793A (zh) * | 2017-07-03 | 2017-09-22 | 深圳市华星光电技术有限公司 | 一种白光有机电致发光器件和相应的显示面板 |
| US10411213B2 (en) | 2017-07-03 | 2019-09-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd | White LED with two blue layers and a yellow layer and the display panel thereof |
| CN107863457B (zh) * | 2017-10-18 | 2019-06-25 | 武汉华星光电半导体显示技术有限公司 | 一种oled器件及其制作方法 |
| CN108258156B (zh) * | 2018-01-19 | 2020-04-28 | 深圳市华星光电技术有限公司 | 白光oled器件的制作方法 |
| US10424621B2 (en) | 2018-01-19 | 2019-09-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method for white OLED device |
| CN108807706A (zh) * | 2018-06-05 | 2018-11-13 | 佛山科学技术学院 | 一种白光串联有机电致发光器件 |
| CN110611036A (zh) * | 2018-06-15 | 2019-12-24 | 周卓煇 | 亮度色温可调串联式有机发光二极管及其用途 |
| CN110729336A (zh) * | 2019-10-28 | 2020-01-24 | 昆山国显光电有限公司 | 一种显示面板及显示装置 |
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