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WO2016078102A1 - 白光oled显示屏及其串联式白光有机发光二极管 - Google Patents

白光oled显示屏及其串联式白光有机发光二极管 Download PDF

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WO2016078102A1
WO2016078102A1 PCT/CN2014/092126 CN2014092126W WO2016078102A1 WO 2016078102 A1 WO2016078102 A1 WO 2016078102A1 CN 2014092126 W CN2014092126 W CN 2014092126W WO 2016078102 A1 WO2016078102 A1 WO 2016078102A1
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thickness
transport layer
light emitting
electron transport
layer
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PCT/CN2014/092126
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French (fr)
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李先杰
邹清华
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深圳市华星光电技术有限公司
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Priority to US14/404,709 priority Critical patent/US20160351809A1/en
Publication of WO2016078102A1 publication Critical patent/WO2016078102A1/zh

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    • H—ELECTRICITY
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene

Definitions

  • the present invention relates to the technical field of liquid crystal displays, and in particular to a tandem white organic light emitting diode and a white light OLED display using the tandem white organic light emitting diode.
  • OLED is an Organic Light-Emitting Diode with self-illumination, high color saturation and high contrast. It is the core of next-generation flat panel display technology and flexible display technology. Small-size OLED displays are currently used in mobile phones and tablets, and their cost is close to that of liquid crystal displays. However, large-size OLED displays also have prominent problems such as high cost and short life, which affect the competition with large-size liquid crystal displays.
  • WOLED white OLED + CF substrate
  • WOLEDs usually use series WOLEDs.
  • the series WOLED can double the component efficiency and life, and is the core technology of the large-size OLED display. How to enhance the blue light of the series WOLED to achieve cool white light is an urgent problem to be solved.
  • the embodiment of the invention provides a white light OLED display pole and a series white light organic light emitting diode thereof to solve the technical problem of how to enhance the blue light of the tandem WOLED in the prior art.
  • an embodiment of the present invention provides a tandem white light organic light emitting diode including an anode, a first light emitting unit, an intermediate electron transport layer, a connection layer, an intermediate hole transport layer, and a second light emitting unit.
  • the first light emitting unit emits blue light, the second light emitting layer emits yellow light; or the first light emitting unit emits white light, and the second light emitting layer emits white light; and the intermediate electron transport layer adopts Bphen doping to have a work function of less than 3 eV
  • An active metal to absorb an electron transporting material having a peak position in the intermediate electron transporting layer greater than 490 nm or less than 440 nm
  • the first light emitting unit comprises: a first hole transporting layer, a first light emitting layer, a first electron transporting layer;
  • the unit includes: a second hole transport layer, a second light emitting layer, and a second electron transport layer;
  • the anode is made of indium tin oxide ITO and has a thickness of 70 nm;
  • the first hole transport layer is made of NPB and has a thickness of 60 nm; and the first light emitting layer Using DPVBi, the thickness is 25nm;
  • the first electron transport layer is B
  • another technical solution of the present invention is to provide a tandem white light organic light emitting diode comprising an anode stacked in sequence, a first light emitting unit, an intermediate electron transport layer, a connecting layer, an intermediate hole transport layer, and a second light emitting layer.
  • the intermediate electron transport layer adopts Bphen doping to have low work function
  • An active metal at 3 eV to absorb an electron transporting material having a peak position in the intermediate electron transporting layer of greater than 490 nm or less than 440 nm.
  • a white light OLED display panel comprising a series white light organic light emitting diode stacked on a CF substrate, the series white light organic light emitting diode comprising an anode stacked in sequence, first a light emitting unit, an intermediate electron transport layer, a connection layer, an intermediate hole transport layer, a second light emitting unit, and a cathode; wherein the first light emitting unit emits blue light, the second light emitting layer emits yellow light; or the first The light emitting unit emits white light, and the second light emitting layer emits white light; the intermediate electron transport layer is doped with Bphen with an active metal having a work function of less than 3 eV to absorb a peak position in the intermediate electron transport layer of greater than 490 nm or An electron transport material of less than 440 nm.
  • the present invention provides a white light OLED display pole and its series white
  • the intermediate electron transport layer of the photo-organic light-emitting diode is doped with Bphen (4.7-diphenyl-1,10-phenanthroline) with an active metal having a work function of less than 3 eV (electron volts) to absorb the intermediate electron transport layer.
  • Bphen 4.7-diphenyl-1,10-phenanthroline
  • active metal having a work function of less than 3 eV (electron volts) to absorb the intermediate electron transport layer.
  • the electron transporting material having a peak position greater than 490 nm or less than 440 nm, that is, avoiding the absorption of blue light, achieves the enhancement of the blue light of the tandem white light organic light emitting diode, thereby achieving the purpose of emitting cold white light.
  • FIG. 1 is a schematic structural view of a tandem white light organic light emitting diode according to the present invention.
  • FIG. 2 is a white light spectrum diagram of a tandem white light organic light emitting diode in a preferred embodiment of the present invention
  • FIG. 3 is a schematic structural view of a white light OLED display screen of the present invention.
  • FIG. 1 is a schematic structural view of a tandem white light organic light emitting diode according to the present invention.
  • the tandem white light organic light emitting diode 100 of the present invention includes an anode 1, a first light emitting unit 2, an intermediate charge generating layer 3, a second light emitting unit 4, and a cathode 5 which are sequentially stacked in series.
  • the connecting layer of the present invention has the lowest unoccupied molecular orbital, electrons can transition from the highest occupied molecular orbital of the intermediate hole transporting layer to the lowest unoccupied molecular orbital of the connecting layer to form a dipole, and the anode 1 and the cathode 5 are added with a forward voltage. After that, the dipole dissociates into holes and electrons under the action of an external electric field, and the holes are transmitted to the second light-emitting unit 4 under the electric field, and the electricity injected from the cathode 5. Sub-composite luminescence, similarly, electrons are transmitted to the first illuminating unit 2 under the action of an electric field, and illuminate with the holes injected from the anode 1.
  • the first light emitting unit 2 includes a first hole transporting layer 21, a first light emitting layer 22, and a first electron transporting layer 23, and the intermediate charge generating layer 3 includes an intermediate electron transporting layer 31, a connecting layer 32, and an intermediate hole transporting layer 33,
  • the second light emitting unit 4 includes a second hole transporting layer 41, a second light emitting layer 42 and a second electron transporting layer 43.
  • the cathode 5 includes a first cathode layer 51 and a second cathode layer 52. In a practical embodiment, the cathode 5 It may also be the first cathode layer 51 and the second cathode layer 52.
  • the first illuminating unit 2 of the present invention emits blue light, and the second illuminating layer 42 emits yellow light.
  • the first illuminating unit 2 and the second illuminating layer 42 may all emit white light, which may be according to actual needs.
  • the outgoing light is made of materials.
  • the intermediate electron transport layer 31 of the present invention is doped with Bphen (4.7-diphenyl-1,10-phenanthroline) with an active metal having a work function of less than 3 eV (electron volts) to absorb the intermediate electron transport layer 31.
  • An electron transporting material having a peak position greater than 490 nm or less than 440 nm.
  • each layer of the tandem white light organic light emitting diode of the present invention are as follows: the anode 1 can be made of indium tin oxide ITO, the thickness is 60-80 nm, and the first hole transport layer 21 is NPB (N, N'- Bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine) having a thickness of 50-70 nm; the first luminescent layer 22 is made of DPVBi [4, 4'-bis(2,2-diphenylvinyl)biphenyl] having a thickness of 20-30 nm, the first electron transport layer 23 is Bphen, the thickness is 8-12 nm, and the intermediate electron transport layer 31 is Bphen-doped Li , Na, K, Ru or Cs, the thickness is 8-12 nm, the connection layer 32 is HATCN (hexaonitrile hexaazabenzophenanthrene),
  • the anode 1 of the tandem white light organic light emitting diode is made of indium tin oxide ITO, the thickness is 70 nm, the first hole transport layer 21 is NPB, and the thickness is 60 nm; the first light emitting layer 22 is made of DPVBi, thickness. 25 nm; the first electron transport layer 23 is Bphen, the thickness is 10 nm, the intermediate electron transport layer 31 is doped with Li, Na, K, Ru or Cs with a thickness of 10 nm, and the connection layer 32 is HATCN with a thickness of 20 nm.
  • the hole transport layer 33 is NPB, the thickness is 20 nm, the second hole transport layer 41 is TCTA, and the thickness is 10 nm; the second light-emitting layer 42 is 45% TCTA: 45% Bphen: 10% Ir(ppy) 2 tmd: 0.2 %Ir(mphmq) 2 (tmd), thickness 25nm, second electron transport layer 43 using Bphen, thickness 40nm, first cathode 5 layer using Al, thickness 100nm, using the above scheme, can effectively absorb intermediate electron transport
  • FIG. 2 The electron transporting material in the layer 31 having a peak position greater than 490 nm and less than 440 nm, that is, reducing the absorption of blue light, achieving cool white light, please refer to FIG. 2.
  • FIG. 2 is a white light spectrum of the tandem white light organic light emitting diode in a preferred embodiment of the present invention.
  • Figure, the picture shows the power after
  • the wavelength and intensity map of the white light spectrum of the white light-emitting organic light-emitting diode, specifically the components and parameters as described above, differ only in the thickness of the first hole transport layer 21, specifically 60 nm and 80 nm, respectively, as shown in the figure.
  • the intermediate electron transport layer 31 can absorb the electron transport material having a peak position greater than 490 nm and less than 440 nm in the intermediate electron transport layer 31 by Bphen doping Li, Na, K, Ru or Cs, thereby avoiding the absorption of blue light, thereby enhancing
  • the series white light organic light emitting diode blue light achieves the purpose of cool white light.
  • the intermediate electron transport layer 31 of the present invention may also employ an alkaline earth metal and a rare earth metal, the alkaline earth metal including Ca, Sr or Ba; the rare earth metal including Ce, Pr, Sm, Eu, Tb or Yb, and the connection layer 32 may also be MoO 3 , One or more of WO 3 , V 2 O 5 , and ReO 3 , the cathode 5 further includes a second cathode layer 52 which is made of LiF and has a thickness of 1 nm.
  • FIG. 3 is a schematic structural diagram of a white light OLED display screen according to the present invention.
  • the white light OLED display 200 of the present invention includes a power source 201, a CF substrate 202, and the above-mentioned series white light organic light emitting diode 100, and a series white light organic light emitting diode.
  • the white light emitted by 100 emits light of different colors through the CF substrate 202.
  • the intermediate electron transport layer 31 is doped with Bphen (4.7-diphenyl-1,10-phenanthroline) with an active metal having a work function of less than 3 eV (electron volts) to absorb the peaks in the intermediate electron transport layer 31.

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Abstract

一种串联式白光有机发光二极管（100），其包括依次层叠串联的阳极（1）、第一发光单元（2）、中间电子传输层（31）、连接层（32）、中间空穴传输层（33）、第二发光单元（4）以及阴极（5）；其中，第一发光单元（2）出射蓝光，第二发光单元（4）出射黄光；或者第一发光单元（2）出射白光，第二发光单元（4）出射白光；以及中间电子传输层（31）采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。

Description

白光OLED显示屏及其串联式白光有机发光二极管 【技术领域】
本发明涉及液晶显示器的技术领域，具体是涉及一种串联式白光有机发光二极管以及使用该串联式白光有机发光二极管的白光OLED显示屏。
【背景技术】
OLED即有机发光二极管(Organic Light-Emitting Diode)，具有自发光，高色饱和度，高对比度等优点，是下一代平板显示技术和柔性显示技术的核心。目前小尺寸OLED显示屏已经用于手机和平板电脑中，其成本已经接近液晶显示屏。然而大尺寸OLED显示屏还存在成本过高，寿命短等突出问题，影响了与大尺寸液晶显示屏的竞争。
目前最有希望应用于大尺寸OLED显示屏的技术路线是WOLED(白光OLED)+CF基板，它具有大幅提高产品良率的潜力，其中WOLED通常采用串联式WOLED。
串联式WOLED可以成倍的提高元件效率和寿命，是大尺寸OLED显示屏的核心技术。如何增强串联式WOLED的蓝光实现冷白光，是目前亟待解决的问题。
【发明内容】
本发明实施例提供一种白光OLED显示屏极及其串联式白光有机发光二极管，以解决现有技术中如何增强串联式WOLED的蓝光实现冷白光的技术问题。
为解决上述问题，本发明实施例提供了一种串联式白光有机发光二极管，包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，第一发光单元出射蓝光，第二发光层出射黄光；或者第一发光单元出射白光，第二发光层出 射白光；中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料；第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层；阳极采用铟锡氧化物ITO，厚度为70nm；第一空穴传输层采用NPB，厚度为60nm；第一发光层采用DPVBi，厚度为25nm；第一电子传输层采用Bphen，厚度为10nm；中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为10nm；连接层采用MoO3、WO3、V2O5、ReO3中的一种或多种，厚度为20nm；中间空穴传输层采用NPB，厚度为20nm；第二空穴传输层采用TCTA，厚度为10nm；第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm；第二电子传输层采用Bphen，厚度为40nm；阴极采用LiF层，厚度为1nm。
为解决上述问题，本发明另一技术方案是提供一种串联式白光有机发光二极管，包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，第一发光单元出射蓝光，第二发光层出射黄光；或者第一发光单元出射白光，第二发光层出射白光；中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料。
为解决上述问题，本发明另一技术方案是提供一种白光OLED显示屏，包括层叠于CF基板上的串联式白光有机发光二极管，所述串联式白光有机发光二极管包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，所述第一发光单元出射蓝光，所述第二发光层出射黄光；或者所述第一发光单元出射白光，所述第二发光层出射白光；所述中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收所述中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料。
相对于现有技术，本发明提供的白光OLED显示屏极及其串联式白 光有机发光二极管的中间电子传输层采用Bphen(4.7-二苯基-1，10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属以吸收中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明串联式白光有机发光二极管的结构示意图；
图2是本发明优选实施例中串联式白光有机发光二极管的白光光谱图；
图3是本发明白光OLED显示屏的结构示意图。
【具体实施方式】
下面结合附图和实施例，对本发明作进一步的详细描述。特别指出的是，以下实施例仅用于说明本发明，但不对本发明的范围进行限定。同样的，以下实施例仅为本发明的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1，图1是本发明串联式白光有机发光二极管的结构简图。本发明的串联式白光有机发光二极管100包括依次层叠串联的阳极1、第一发光单元2、中间电荷产生层3、第二发光单元4以及阴极5。
本发明的连接层具有最低未占分子轨道，电子可以从中间空穴传输层的最高占有分子轨道跃迁到连接层的最低未占分子轨道形成偶极子，阳极1与阴极5加上正向电压后，偶极子在外电场作用下解离成空穴和电子，空穴在电场作用下传输至第二发光单元4，与从阴极5注入的电 子复合发光，同理，电子在电场作用下传输至第一发光单元2，与从阳极1注入的空穴复合发光。
第一发光单元2包括第一空穴传输层21、第一发光层22以及第一电子传输层23，中间电荷产生层3包括中间电子传输层31、连接层32以及中间空穴传输层33，第二发光单元4包括第二空穴传输层41、第二发光层42以及第二电子传输层43，阴极5包括第一阴极层51，第二阴极层52，在其实实施例中，阴极5也可以为第一阴极层51，不包含第二阴极层52。
本发明的第一发光单元2出射蓝光，第二发光层42出射黄光，当然在其它实施例中，也可以是第一发光单元2、第二发光层42均出射白光，其可根据实际需要的出射光选用材料。
本发明的中间电子传输层31采用Bphen(4.7-二苯基-1，10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属以吸收中间电子传输层31中的峰位大于490nm或小于440nm的电子传输材料。
本发明的串联式白光有机发光二极管各层的材料成分及厚度范围为：阳极1可采用铟锡氧化物ITO，厚度为60-80nm，第一空穴传输层21采用NPB(N，N’-二(1-萘基)-N，N’-二苯基-1，1’-联苯-4,4’-二胺)，厚度为50-70nm；第一发光层22采用DPVBi[4，4’-双(2，2-二苯基乙烯基)联苯]，厚度为20-30nm，第一电子传输层23采用Bphen，厚度为8-12nm，中间电子传输层31采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为8-12nm，连接层32采用HATCN(六腈六氮杂苯并菲)，厚度为15-25nm，中间空穴传输层33采用NPB，厚度为15-25nm，第二空穴传输层41采用TCTA(4，4′，4"-三(N-咔唑基)苯胺)，厚度为8-12nm；第二发光层42采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd[iridium(III)bis(2phenylquinoline)tetramethylheptadionate]：0.2％Ir(mphmq)2(tmd)[Iridium(III)bis(4-methyl-2-(3，5-dimethylphenyl)quinolinato-N,C2′)tetra-me thylheptadionate]，厚度为20-30nm，第二电子传输层43采用Bphen，厚度为35-45nm，第一阴极层51采用Al，厚度为90-110nm，采用上述方案，只要中间电子传输层31中Bphen掺杂有逸出功为低于3eV的活 泼金属以，则会吸收中间电子传输层31中的峰位大于490nm或小于440nm的电子传输材料，即减少对蓝光的吸收，实现冷白光。
在优选的实施例中，串联式白光有机发光二极管的阳极1采用铟锡氧化物ITO，厚度为70nm，第一空穴传输层21采用NPB，厚度为60nm；第一发光层22采用DPVBi，厚度为25nm；第一电子传输层23采用Bphen，厚度为10nm，中间电子传输层31采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为10nm，连接层32采用HATCN，厚度为20nm，中间空穴传输层33采用NPB，厚度为20nm，第二空穴传输层41采用TCTA，厚度为10nm；第二发光层42采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm，第二电子传输层43采用Bphen，厚度为40nm，第一阴极5层采用Al，厚度为100nm，采用上述方案，能有效地吸收中间电子传输层31中的峰位大于490nm以及小于440nm的电子传输材料，即减少对蓝光的吸收，实现冷白光，请参阅图2，图2是本发明优选实施例中串联式白光有机发光二极管的白光光谱图，图为通电后的串联式白光有机发光二极管的白光光谱的波长与强度图，具体地在各成份以及参数如上述，不同的仅是第一空穴传输层21的厚度，具体分别为60nm、80nm，由图可知，中间电子传输层31采用Bphen掺杂Li、Na、K、Ru或Cs能有效地吸收中间电子传输层31中的峰位大于490nm以及小于440nm的电子传输材料，即避开蓝光的吸收，从而增强串联式白光有机发光二极管蓝光实现冷白光的目的。
本发明的中间电子传输层31还可采用碱土金属和稀土金属，碱土金属包括Ca、Sr或Ba；稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb，连接层32还可采用MoO3、WO3、V2O5、ReO3中的一种或多种，阴极5进一步包括第二阴极层52，其所述采用的材料为LiF，厚度为1nm。
请参阅图3，图3是本发明白光OLED显示屏的结构示意图，本发明的白光OLED显示屏200包括电源201、CF基板202以及上述的串联式白光有机发光二极管100，串联式白光有机发光二极管100发出的白光通过CF基板202出射不同颜色的光。
本发明提供的白光OLED显示屏极及其串联式白光有机发光二极管 的中间电子传输层31采用Bphen(4.7-二苯基-1，10-菲咯啉)掺杂有逸出功为低于3eV(电子伏特)的活泼金属以吸收中间电子传输层31中的峰位大于490nm或小于440nm的电子传输材料，即避开蓝光的吸收，达到增强串联式白光有机发光二极管的蓝光，从而实现出射冷白光的目的。
以上仅为本发明的一种实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种串联式白光有机发光二极管，其特征在于，包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，
    所述第一发光单元出射蓝光，所述第二发光层出射黄光；或者所述第一发光单元出射白光，所述第二发光层出射白光；
    所述中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收所述中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料；
    所述第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；
    所述第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层；
    所述阳极采用铟锡氧化物ITO，厚度为70nm；
    所述第一空穴传输层采用NPB，厚度为60nm；
    所述第一发光层采用DPVBi，厚度为25nm；
    所述第一电子传输层采用Bphen，厚度为10nm；
    所述中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为10nm；
    所述连接层采用MoO3、WO3、V2O5、ReO3中的一种或多种，厚度为20nm；
    所述中间空穴传输层采用NPB，厚度为20nm；
    所述第二空穴传输层采用TCTA，厚度为10nm；
    所述第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm；
    所述第二电子传输层采用Bphen，厚度为40nm；
    所述阴极采用LiF层，厚度为1nm。
  2. 一种串联式白光有机发光二极管，其特征在于，包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，
    所述第一发光单元出射蓝光，所述第二发光层出射黄光；或者所述第一发光单元出射白光，所述第二发光层出射白光；
    所述中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收所述中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料。
  3. 根据权利要求2串联式白光有机发光二极管，其特征在于，
    所述第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；
    所述第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层。
  4. 根据权利要求3串联式白光有机发光二极管，其特征在于，
    所述阳极采用铟锡氧化物ITO，厚度为60-80nm；
    所述第一空穴传输层采用NPB，厚度为50-70nm；
    所述第一发光层采用DPVBi，厚度为20-30nm；
    所述第一电子传输层采用Bphen，厚度为8-12nm；
    所述中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为8-12nm；
    所述连接层采用HATCN，厚度为15-25nm；
    所述中间空穴传输层采用NPB，厚度为15-25nm；
    所述第二空穴传输层采用TCTA，厚度为8-12nm；
    所述第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为20-30nm；
    所述第二电子传输层采用Bphen，厚度为35-45nm；
    所述阴极采用Al，厚度为90-110nm。
  5. 根据权利要求3串联式白光有机发光二极管，其特征在于，
    所述阳极采用铟锡氧化物ITO，厚度为70nm；
    所述第一空穴传输层采用NPB，厚度为60nm；
    所述第一发光层采用DPVBi，厚度为25nm；
    所述第一电子传输层采用Bphen，厚度为10nm；
    所述中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为10nm；
    所述连接层采用HATCN，厚度为20nm；
    所述中间空穴传输层采用NPB，厚度为20nm；
    所述第二空穴传输层采用TCTA，厚度为10nm；
    所述第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm；
    所述第二电子传输层采用Bphen，厚度为40nm；
    所述阴极采用Al，厚度为100nm。
  6. 根据权利要求4串联式白光有机发光二极管，其特征在于，所述中间电 子传输层还可采用碱土金属和稀土金属，所述碱土金属包括Ca、Sr或Ba；所述稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb。
  7. 根据权利要求5串联式白光有机发光二极管，其特征在于，所述中间电子传输层还可采用碱土金属和稀土金属，所述碱土金属包括Ca、Sr或Ba；所述稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb。
  8. 根据权利要求4串联式白光有机发光二极管，其特征在于，所述连接层还可采用MoO3、WO3、V2O5、ReO3中的一种或多种。
  9. 根据权利要求5串联式白光有机发光二极管，其特征在于，所述连接层还可采用MoO3、WO3、V2O5、ReO3中的一种或多种。
  10. 根据权利要求5串联式白光有机发光二极管，其特征在于，所述阴极还包括LiF层，厚度为1nm。
  11. 一种白光OLED显示屏，其特征在于，包括层叠于CF基板上的串联式白光有机发光二极管，所述串联式白光有机发光二极管包括依次层叠的阳极、第一发光单元、中间电子传输层、连接层、中间空穴传输层、第二发光单元以及阴极；其中，
    所述第一发光单元出射蓝光，所述第二发光层出射黄光；或者所述第一发光单元出射白光，所述第二发光层出射白光；
    所述中间电子传输层采用Bphen掺杂有逸出功为低于3eV的活泼金属以吸收所述中间电子传输层中的峰位大于490nm或小于440nm的电子传输材料。
  12. 根据权利要求11白光OLED显示屏，其特征在于，
    所述第一发光单元包括：第一空穴传输层、第一发光层、第一电子传输层；
    所述第二发光单元包括：第二空穴传输层、第二发光层、第二电子传输层。
  13. 根据权利要求12白光OLED显示屏，其特征在于，
    所述阳极采用铟锡氧化物ITO，厚度为60-80nm；
    所述第一空穴传输层采用NPB，厚度为50-70nm；
    所述第一发光层采用DPVBi，厚度为20-30nm；
    所述第一电子传输层采用Bphen，厚度为8-12nm；
    所述中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为8-12nm；
    所述连接层采用HATCN，厚度为15-25nm；
    所述中间空穴传输层采用NPB，厚度为15-25nm；
    所述第二空穴传输层采用TCTA，厚度为8-12nm；
    所述第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为20-30nm；
    所述第二电子传输层采用Bphen，厚度为35-45nm；
    所述阴极采用Al，厚度为90-110nm。
  14. 根据权利要求12白光OLED显示屏，其特征在于，
    所述阳极采用铟锡氧化物ITO，厚度为70nm；
    所述第一空穴传输层采用NPB，厚度为60nm；
    所述第一发光层采用DPVBi，厚度为25nm；
    所述第一电子传输层采用Bphen，厚度为10nm；
    所述中间电子传输层采用Bphen掺杂Li、Na、K、Ru或Cs，厚度为10nm；
    所述连接层采用HATCN，厚度为20nm；
    所述中间空穴传输层采用NPB，厚度为20nm；
    所述第二空穴传输层采用TCTA，厚度为10nm；
    所述第二发光层采用45％TCTA：45％Bphen：10％Ir(ppy)2tmd：0.2％Ir(mphmq)2(tmd)，厚度为25nm；
    所述第二电子传输层采用Bphen，厚度为40nm；
    所述阴极采用Al，厚度为100nm。
  15. 根据权利要求13白光OLED显示屏，其特征在于，所述中间电子传输层还可采用碱土金属和稀土金属，所述碱土金属包括Ca、Sr或Ba；所述稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb。
  16. 根据权利要求14白光OLED显示屏，其特征在于，所述中间电子传输层还可采用碱土金属和稀土金属，所述碱土金属包括Ca、Sr或Ba；所述稀土金属包括Ce、Pr、Sm、Eu、Tb或Yb。
  17. 根据权利要求13白光OLED显示屏，其特征在于，所述连接层还可采用MoO3、WO3、V2O5、ReO3中的一种或多种。
  18. 根据权利要求14白光OLED显示屏，其特征在于，所述连接层还可采用MoO3、WO3、V2O5、ReO中的一种或多种3。
  19. 根据权利要求14白光OLED显示屏，其特征在于，所述阴极还包括LiF层，厚度为1nm。
PCT/CN2014/092126 2014-11-18 2014-11-25 白光oled显示屏及其串联式白光有机发光二极管 WO2016078102A1 (zh)

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