[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN104357784A - Method for preparing thick nickel coating on surface of semiconductor material - Google Patents

Method for preparing thick nickel coating on surface of semiconductor material Download PDF

Info

Publication number
CN104357784A
CN104357784A CN201410689817.4A CN201410689817A CN104357784A CN 104357784 A CN104357784 A CN 104357784A CN 201410689817 A CN201410689817 A CN 201410689817A CN 104357784 A CN104357784 A CN 104357784A
Authority
CN
China
Prior art keywords
coating
semiconductor material
nickel coating
nickel
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410689817.4A
Other languages
Chinese (zh)
Other versions
CN104357784B (en
Inventor
张吉阜
杨焜
邓春明
邓畅光
刘敏
代明江
周克崧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of New Materials of Guangdong Academy of Sciences
Original Assignee
GUANGDONG RESEARCH INSTITUTE OF INDUSTRIAL TECHNOLOGY (GUANGZHOU RESEARCH INSTITUTE OF NON-FERROUS METALS)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUANGDONG RESEARCH INSTITUTE OF INDUSTRIAL TECHNOLOGY (GUANGZHOU RESEARCH INSTITUTE OF NON-FERROUS METALS) filed Critical GUANGDONG RESEARCH INSTITUTE OF INDUSTRIAL TECHNOLOGY (GUANGZHOU RESEARCH INSTITUTE OF NON-FERROUS METALS)
Priority to CN201410689817.4A priority Critical patent/CN104357784B/en
Publication of CN104357784A publication Critical patent/CN104357784A/en
Application granted granted Critical
Publication of CN104357784B publication Critical patent/CN104357784B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

The invention relates to a method for preparing a thick nickel coating on the surface of a semiconductor material. The method is characterized by comprising the following steps of degreasing an N-type or P-type Bi2Te3 material for removing oil; blowing sand with No. 46 zirconium corundum under the conditions of a sand-blowing pressure of 0.1-0.2MPa, a blowing distance of 150-200mm and an angle of 45-80 degrees; and spraying industrially pure nickel powder of which the purity is equal to or greater than 99% and the grain size is -45+15mu m by virtue of a plasma spray gun of which the current is 500-700A, hydrogen is 5-7L/min and argon is 40-60L/min under the conditions of a power feeding rate of 80-120g/min, a spraying distance of 150-180mm, a gun speed of 800-2000mm/s and the deposit thickness of 10-20mu m for each time to obtain the nickel coating of which the total thickness is 20-80mu m. By the method disclosed by the invention, the thick nickel coating having the thickness greater than 20mu m can be obtained on the surface of the semiconductor material, the method has the advantages of high coating deposition efficiency, high deposition speed, uniform thickness, no high requirement on the spray raw material and excellent bonding force between the coating and the semiconductor material.

Description

A kind of method preparing thick nickel coating at semiconductor material surface
Technical field
The present invention relates to a kind of thick nickel coating preparation method of semiconductor refrigerating wafer, belong to technical field of material surface treatment.
Background technology
Tellurobismuthite (Bi 2te 3) be a kind of good semiconductor material, thermoelectricity merit figue is 1.6 × 10 -3/ K, is thermoelectric material best under the room temperature found at present, is with a wide range of applications in fields such as thermopile, thermal sensor, thermoelectric modules.But Bi 2te 3can not Direct Electroplating tin alloy, need to carry out metalized on its surface in advance.
Electroless plating or electronickelling are the most frequently used semiconductor material surface metallization treating methods.Bi 2te 3crystal nickel plating, not only achieves electroconductibility and the weldability on surface, can also the diffusion of effective blocking material inner element, as infiltration and the loss of stop Cu, Bi, Sn element, prevents resistance and the difference variation of material internal.Common metal material, as Cu, Al, stainless steel etc., is the deposition easily realizing nickel coating by plating or electroless plating, because be combined by interatomic metallic bond between metallic matrix with nickel coating, not only plating is easy, and binding force of cladding material is excellent.And Bi 2te 3this is as semiconductor material, and fragility is large, mechanical strength is low, and the bonding force of material internal is mainly Van der Waals force, if in its surface directly nickel plating, and at all cannot plating.Common way is to Bi 2te 3material pickling is in advance corroded, and to form one deck cavity layer on its surface, nickel realizes coating and Bi by pinning effect after deposition in cavity 2te 3the combination of material.
Think in industry, the thickness of nickel coating generally only has 5 ~ 10 μm, the thickness of nickel coating need be brought up to 20 ~ 80 μm, like this can be better to the performance of product, so thick nickel refers to the nickel coating obtaining and be greater than 20 μm.
Current problem is, due to semi-conductor Bi 2te 3the poorly conductive of material, be difficult to plating thick, the bonding force of coating is also very poor.Adopt general technology to Bi 2te 3electroplating material nickel, when thickness of coating is below 5 μm, nickel dam sticking power is good, and during more than 5 μm, coating unrelieved stress increases, and sticking power significantly declines, and occurs peeling and the peeling phenomenon of nickel dam.The method adopting chemical nickel plating likely forms thick nickel coating, but the general ni-p alloy coating of chemical Ni-plating layer, but not pure-nickel-layer, the blocking effect of degenerating to semiconductor substrate Elements Diffusion is not good.There are some researches show, the thickness of nickel dam increases, and obviously can improve the weldability of cooling piece, refrigeration, work-ing life and safe reliability, urgently find at semi-conductor Bi for this reason 2te 3material surface prepares the method for thick nickel coating.
Summary of the invention
The object of the invention is to exploitation a kind of at semiconductor refrigerating wafer Bi 2te 3thick nickel coating method prepared by material.The present invention adopts air plasma spraying method directly at semi-conductor Bi 2te 3material sprays nickel coating, and concrete technical scheme is as follows:
By N-type or P type Bi 2te 3after material degreasing degreasing; Use 46# zircon corundum, blast pressure 0.1 ~ 0.2MPa, spray distance 150 ~ 200mm, angle 45 ~ 80 ° of blasts; Adopt plasma gun electric current 500 ~ 700A, hydrogen 5 ~ 7L/min, argon gas 40 ~ 60L/min; Dusty spray is the technical pure nickel powder of purity>=99%, granularity-45+15 μm, powder feeding rate 80 ~ 120g/min; Spray, apart from 150 ~ 180mm, walks rifle speed 800 ~ 2000mm/s, often all over deposition 10 ~ 20 μm, obtains the nickel coating of total coating thickness 20 ~ 80 μm.
Compared with electronickelling technology, the present invention has following significant advantage:
1. can obtain at semiconductor material surface the thick nickel coating that thickness is greater than more than 20 μm.
2. the bonding force of coating and semiconductor material is excellent, and the bonding strength of P-type semiconductor surface nickel coating is greater than > 15MPa, the bonding strength > 23MPa of N-type semiconductor top coat.
3. coating sedimentation effect is high, speed fast, and often all over deposition about 10 ~ 20 μm, thickness is even, less demanding to spraying raw material.
Accompanying drawing explanation
The metallographic cross-section photograph of Fig. 1 nickel coating.
Embodiment
Below embodiments of the invention are elaborated, in embodiment, give embodiment and specific operation process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
P type Bi 2te 3monocrystal material cuts into 25.4 × 25.4 × 1.52mm square piece, is installed on fixtures for painting after degreasing degreasing; Use 46# zircon corundum, blast pressure 0.2MPa, spray distance 150mm, angle 80 ° of blasts, specimen surface roughness uniformity after blast; Adopt plasma gun electric current 700A, hydrogen 7L/min, argon gas 60L/min; Dusty spray is the technical pure nickel powder of purity>=99%, granularity-45+15 μm, powder feeding rate 120g/min; Spray, apart from 150 mm, is walked rifle speed 1800mm/s, is sprayed 6 times.
The total coating thickness obtained is 65.4 μm, and the sticking power of hundred lattice testing coatings is 1 grade, and pulling open method testing coating bonding strength is 18.9MPa.
Embodiment 2
N-type Bi 2te 3monocrystal material cuts into φ 25.4 × 1.52mm disk, is installed on fixtures for painting after degreasing degreasing; Use 46# zircon corundum, blast pressure 0.1MPa, spray distance 180mm, angle 45 ° of blasts, specimen surface roughness uniformity after blast; Adopt plasma gun electric current 500A, hydrogen 5L/min, argon gas 40L/min; Dusty spray is the technical pure nickel powder of purity>=99%, granularity-45+15 μm, powder feeding rate 80g/min; Spray, apart from 180mm, is walked rifle speed 800mm/s, is sprayed 2 times.
The total coating thickness obtained is 24.4 μm, and the sticking power of hundred lattice testing coatings is 1 grade, and pulling open method testing coating bonding strength is 24MPa.

Claims (1)

1. prepare a method for thick nickel coating at semiconductor material surface, it is characterized in that N-type or P type Bi 2te 3after material degreasing degreasing; Use 46# zircon corundum, blast pressure 0.1 ~ 0.2MPa, spray distance 150 ~ 200mm, angle 45 ~ 80 ° of blasts; Adopt plasma gun electric current 500 ~ 700A, hydrogen 5 ~ 7L/min, argon gas 40 ~ 60L/min; Dusty spray is the technical pure nickel powder of purity>=99%, granularity-45+15 μm, powder feeding rate 80 ~ 120g/min; Spray, apart from 150 ~ 180mm, walks rifle speed 800 ~ 2000mm/s, often all over deposition 10 ~ 20 μm, obtains the nickel coating of total coating thickness 20 ~ 80 μm.
CN201410689817.4A 2014-11-26 2014-11-26 Method for preparing thick nickel coating on surface of semiconductor material Active CN104357784B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410689817.4A CN104357784B (en) 2014-11-26 2014-11-26 Method for preparing thick nickel coating on surface of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410689817.4A CN104357784B (en) 2014-11-26 2014-11-26 Method for preparing thick nickel coating on surface of semiconductor material

Publications (2)

Publication Number Publication Date
CN104357784A true CN104357784A (en) 2015-02-18
CN104357784B CN104357784B (en) 2017-05-10

Family

ID=52525089

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410689817.4A Active CN104357784B (en) 2014-11-26 2014-11-26 Method for preparing thick nickel coating on surface of semiconductor material

Country Status (1)

Country Link
CN (1) CN104357784B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109722619A (en) * 2019-03-21 2019-05-07 香河汇文节能科技有限公司 A kind of semiconductor cooling element surface spraying method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856210A (en) * 1995-04-06 1999-01-05 Hi-Z Technology, Inc. Method for fabricating a thermoelectric module with gapless eggcrate
US5875098A (en) * 1995-04-06 1999-02-23 Hi-Z Corporation Thermoelectric module with gapless eggcrate
JP2006093329A (en) * 2004-09-22 2006-04-06 Toshiba Corp Electrode formation method of thermoelectric transducer
CN101409324A (en) * 2008-07-24 2009-04-15 中国科学院上海硅酸盐研究所 Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof
CN101847685A (en) * 2010-04-16 2010-09-29 江西纳米克热电电子股份有限公司 Heat-resistant stable bismuth telluride-based thermoelectric semiconductor generator and preparation method thereof
CN102965611A (en) * 2012-12-04 2013-03-13 广州有色金属研究院 Method for spraying barium titanate high-dielectric coating by using plasma
CN103014587A (en) * 2013-01-11 2013-04-03 广州有色金属研究院 Method for thermally spraying molybdenum coating on axial surface of crank shaft

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856210A (en) * 1995-04-06 1999-01-05 Hi-Z Technology, Inc. Method for fabricating a thermoelectric module with gapless eggcrate
US5875098A (en) * 1995-04-06 1999-02-23 Hi-Z Corporation Thermoelectric module with gapless eggcrate
JP2006093329A (en) * 2004-09-22 2006-04-06 Toshiba Corp Electrode formation method of thermoelectric transducer
CN101409324A (en) * 2008-07-24 2009-04-15 中国科学院上海硅酸盐研究所 Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof
CN101847685A (en) * 2010-04-16 2010-09-29 江西纳米克热电电子股份有限公司 Heat-resistant stable bismuth telluride-based thermoelectric semiconductor generator and preparation method thereof
CN102965611A (en) * 2012-12-04 2013-03-13 广州有色金属研究院 Method for spraying barium titanate high-dielectric coating by using plasma
CN103014587A (en) * 2013-01-11 2013-04-03 广州有色金属研究院 Method for thermally spraying molybdenum coating on axial surface of crank shaft

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MENG QU，ET AL.: ""On the Role of Bubbles in Metallic Splat Nanopores and Adhesion"", 《JOURNAL OF THERMAL SPRAY TECHNOLOGY》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109722619A (en) * 2019-03-21 2019-05-07 香河汇文节能科技有限公司 A kind of semiconductor cooling element surface spraying method

Also Published As

Publication number Publication date
CN104357784B (en) 2017-05-10

Similar Documents

Publication Publication Date Title
TWI526261B (en) Composite material substrate for led luminescent element, method for manufacturing the same and led luminescent element
CN108715988B (en) Thermal barrier coating with thermal barrier and CMAS corrosion adhesion resistance and preparation process thereof
CN102154639B (en) Aluminum-particle-based method for preparing coating by cold spray deposition
EP2461379B1 (en) Wafer for led mounting, method for manufacturing the same, and led-mounted structure using the wafer
CN103733331A (en) Heat dissipating component for semiconductor element
US20140069700A1 (en) Lamination, conductive material, and method for manufacturing lamination
TWI668312B (en) Radiating parts for semiconductor elements
CN103911620A (en) Preparation method for thermal-shock-resistant metal-based coating
CN102191500A (en) Composite coating capable of preventing marine biofouling and spraying method thereof
CN102700014A (en) Diamond micro-powder plated titanium, nickel-phosphorous and nickel composite diamond wire saw as well as preparation method thereof
RU2008138721A (en) METHOD FOR PRODUCING FUNCTIONAL NANOSTRUCTURED COATINGS
MX2015010494A (en) Process for fabricating an aircraft part comprising a substrate and a substrate coating layer.
CN102433527A (en) High-wear-resistance steel roller of belt conveyor and preparation method
CN102418064B (en) Method for preparing TiAl-Nb composite coating with liquid zinc corrosion resistance through supersonic spraying
KR101746974B1 (en) Method for preparing metal-coated steel sheet and metal-coated steel sheet prepared by the same
CN104357784A (en) Method for preparing thick nickel coating on surface of semiconductor material
US20150267732A1 (en) Cold spray nodes, studs, stud assemblies, and methods of manufacture
CN109972020A (en) A kind of high anti-corrosion composite coating and preparation method thereof
Wang et al. Optimization on the bonding strength and microstructure of atmospheric plasma sprayed Y2O3 coatings by response surface methodology
US8551613B2 (en) Coated article and method for manufacturing same
CN101660160A (en) Nitride compound protective coating with high hardness and high thermal shock stability
CN105385987A (en) High-temperature anti-oxidation layer on metal tungsten surface and manufacturing method of high-temperature anti-oxidation layer
KR20160098219A (en) Diffusion bonded copper sputtering target assembly
CN107460424B (en) Wear-resistant corrosion-resistant nano aluminum nitride composite coating
CN102534480A (en) Coating piece and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180103

Address after: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No.

Patentee after: NEW MATERIALS RESEARCH INSTITUTE OF GUANGDONG PROVINCE

Address before: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No.

Patentee before: GUANGDONG RESEARCH INSTITUTE OF INDUSTRIAL TECHNOLOGY (GUANGZHOU RESEARCH INSTITUTE OF NON-FERROUS METALS)

TR01 Transfer of patent right
CP01 Change in the name or title of a patent holder

Address after: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No.

Patentee after: Institute of new materials, Guangdong Academy of Sciences

Address before: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No.

Patentee before: GUANGDONG INSTITUTE OF NEW MATERIALS

CP01 Change in the name or title of a patent holder