CN104282789A - Solar cell of multi-main-grid structure - Google Patents
Solar cell of multi-main-grid structure Download PDFInfo
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- CN104282789A CN104282789A CN201410536518.7A CN201410536518A CN104282789A CN 104282789 A CN104282789 A CN 104282789A CN 201410536518 A CN201410536518 A CN 201410536518A CN 104282789 A CN104282789 A CN 104282789A
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- 230000005684 electric field Effects 0.000 claims abstract description 18
- 230000003139 buffering effect Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005856 abnormality Effects 0.000 abstract 1
- 230000002146 bilateral effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000027950 fever generation Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell of a multi-main-grid structure. The solar cell comprises a front electrode, a back electrode and a back electric field. The front electrode comprises four or more main grid lines, auxiliary grid lines, thin grid lines and a front electrode frame; the main grid lines are parallel to one another and distributed in the middle in a bilateral symmetry mode; the distance D between every two adjacent main grid lines is equal to L/N1 +/-10 mm, wherein L stands for the side length of the front electrode frame, and N1 stands for the number of the main grid lines; a sectional type or straight-through type is adopted for the main grid lines, and sectional type or straight-through type main grid line areas are each provided with a hollowed-out portion; a buffer section is further arranged at the top end of each main grid line; main grid lines of the back electrode correspond to the main grid lines of the front electrode in number and position. Thus, series resistance of the cell can be reduced, photo-generated carriers generated from the surface of the cell are better collected, the conversion efficiency of the cell is improved, module risk caused by printing quality abnormality such as grid blocking of the cell is reduced, the number of paths through which photo-generated currents are transmitted to the main grid lines is reduced, and module power is promoted.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of solar cell of many main grids structure.
Background technology
The Making programme of conventional structure crystal silicon solar batteries comprises making herbs into wool, diffusion, back-etching, nitride deposition, silk screen printing, sintering.Conventional crystal silicon solar batteries generally adopts the design of two main grids or three main grids, and the grid line design of front electrode affects following several respects: 1, the grid line design of front electrode affects the lifting of battery efficiency.Along with the progress of diffusion technology and the raising of slurry level, diffused sheet resistance progressively increases, if still adopt two main grids or the design of three main grid positive electrodes, the series resistance of cell piece and power loss can increase, thus affect battery efficiency; The object of thin grid line is to collect photogenerated current to greatest extent to main gate line, if empty print, disconnected grid phenomenon appear in thin grid line, then can affect the collection of photogenerated current, affect battery efficiency.Many main grids structure is adopted to improve battery efficiency.2, the grid line design of front electrode affects assembly life-span and component power.If adopt the cell piece of disconnected grid to make assembly, to the hot spot phenomenon of local pyrexia be there is in disconnected grid place, affect assembly life-span, adopt many main grids structure one can reduce thin grid line to break the risk that grid bring, two can reduce the path that photogenerated current transfers to main gate line, are conducive to the lifting of component power.3, when each photovoltaic enterprise product more and more duplicates, realizing product detail differencesization just becomes the sharp weapon of winning victory, and adopts many main grids that battery and assembly can be made to have a distinctive style.Therefore, need to adopt many main grids structure to optimize front electrode.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of solar cell of many main grids structure, reduce the series resistance of cell piece, the photo-generated carrier that better collection battery surface produces, improve battery conversion efficiency, the component risk that the press quality exceptions such as grid of breaking minimizing battery cause, reduce the path that photogenerated current transfers to main gate line, lifting subassembly power.
The technical scheme that technical solution problem of the present invention adopts is: a kind of solar cell of many main grids structure, comprise front electrode, backplate and back of the body electric field, it is characterized in that: described front electrode comprises the main gate line of more than 4 or 4, secondary grid line, thin grid line and front electrode frame, be parallel to each other between described main gate line, and symmetrical distribution placed in the middle, the space D of described adjacent main grid line is front electrode frame length of side L/ N1(main gate line number) ± 10mm; Described main gate line adopts segmented or through type, and described segmented or through type main gate line region are equipped with hollow out, and described main gate line top is also provided with breeze way; The direction that described main gate line is perpendicular is provided with the secondary grid line of some, between described adjacent pair grid line, is connected with some and the thin grid line paralleled with main gate line; Number, the position of described backplate main gate line and front electrode main gate line are corresponding.
Preferred as one, described segmented main gate line comprises openwork part and non-openwork part, and the hop count of described openwork part is 4 ~ 10 sections, every segment length L1 is 5 ~ 30mm, width D 1 is 0.2 ~ 2.0mm, and the every segment length L2 of non-openwork part is 4 ~ 20mm, and width D 2 is 0.15 ~ 0.5mm.
Preferred as one, described through type main gate line is full hollow out, and length L3 is greater than 3/4 of the silicon chip length of side, and width D 3 is 0.2 ~ 1.5mm.
Preferred as one, the pierced pattern in described segmented or through type main gate line region is circular, square, rhombus, ellipse, line strip or irregular shape.
Preferred as one, described breeze way is continuous gradation formula or ladder gradual change type, described breeze way includes the buffering lines of more than 1 or 1, described every bar buffering line length L4 is 0 ~ 20mm, the width D 41 connecting main gate line place is 0.03 ~ 1.5mm, and the width D 42 connecting positive electrode frame place is 0.02 ~ 1.5mm.
Preferred as one, described secondary grid line and main gate line coupling part are gradual change type or non-gradual change type, the width D 5 of described gradual change type tie point is 1 ~ 4 times of secondary grid line width, the length L5 of described transition be 0.02mm to 1/2 of main gate line spacing, described gradual change type adopts continuous gradation linkage section and/or staged gradual change linkage section to connect.
Preferred as one, described front electrode frame is that square closes frame, and the length of side L of described front electrode frame is the Lc(cell piece length of side)-0.5 ~ Lc-6mm, the live width of described positive electrode frame is identical with secondary grid line live width; Described positive electrode frame is provided with chamfering, and described chamfering distance is 0.5 ~ 2mm, and described each chamfering distance is equal or unequal.
Preferred as one, described secondary grid line quantity is 50 ~ 150, and width is 0.02 ~ 0.12mm.
Preferred as one, described every bar back electrode main gate line hop count is 1 ~ 6 section, and every segment length L6 is 6mm ~ Lc, and width D 6 is 0.8 ~ 3.0mm, and described every bar back electrode main gate line edge is provided with the sawtooth being uniformly distributed and putting, the high 0.2 ~ 1mm of described sawtooth.
Preferred as one, be provided with the occlusion area identical with back electrode position in described back of the body electric field, described occlusion area length L7 is identical with back electrode length L6, and described occlusion area width D 7 is D6 ~ D6-0.5mm, and described back of the body electric field length of side L8 is Lc ~ Lc-4mm; Described back of the body electric field four drift angles are provided with chamfering, and described chamfer angle is 45 °, and chamfering distance L9 is 0.5 ~ 2.5mm.
The invention has the beneficial effects as follows: the main gate line adopting more than 4 or 4, the series resistance of cell piece can be reduced, better collect the photo-generated carrier that battery surface produces, improve battery conversion efficiency; The component risk that the press quality exceptions such as grid of breaking minimizing battery cause; Reduce the path that photogenerated current transfers to main gate line, lifting subassembly power, realizes the variation of battery and subassembly product outward appearance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the embodiment of the present invention 1 electrode structure at right side.
Fig. 2 is the schematic diagram of the circular hollow out main gate line of the embodiment of the present invention 1 segmented.
Fig. 3 is the schematic diagram of the embodiment of the present invention 1 main gate line and positive electrode frame junction breeze way structure.
Fig. 4 be the gradual change type syndeton of the embodiment of the present invention 1 segmented main gate line and secondary grid junction schematic diagram.
Fig. 5 is the schematic diagram of the embodiment of the present invention 1 back electrode structure.
Fig. 6 is the schematic diagram that the embodiment of the present invention 1 carries on the back electric field structure.
Fig. 7 is the A place enlarged drawing of the embodiment of the present invention 1 Fig. 7.
Fig. 8 is the embodiment of the present invention 2 through type circular hollow out main grid structure.
Below in conjunction with accompanying drawing, the present invention will be further described.
Embodiment
Embodiment 1: shown in each accompanying drawing, a kind of solar cell of many main grids structure, comprise front electrode, backplate and back of the body electric field, described front electrode comprises 4 main gate line 1, secondary grid line 2, thin grid line 3 and front electrode frame 4, be parallel to each other between described main gate line 1, and symmetrical distribution placed in the middle, the space D of adjacent main grid line 1 is 39mm; The direction that main gate line 1 is perpendicular is provided with 92 secondary grid lines 2, between described adjacent pair grid line 2, is connected with 46 and the thin grid line 3 paralleled with main gate line 1.Main gate line 1 adopts segmented, described segmented main gate line comprises openwork part 5 and non-openwork part 6, the pierced pattern of openwork part 5 is circular, the hop count of described openwork part is 8 sections, every segment length L1 is 7mm, width D 1 is 1.0mm, and the every segment length L2 of non-openwork part is 12mm, and width D 2 is 0.3mm.Described main gate line 1 top is also provided with breeze way, described breeze way is continuous gradation formula, and described breeze way includes 1 buffering lines, and described every bar buffering line length L4 is 3.4mm, the width D 41 connecting main gate line 1 place is 0.04mm, and the width D 42 connecting positive electrode frame 4 place is 0.06mm.Described secondary grid line 2 is gradual change type with main gate line 1 coupling part, the width D 5 of described gradual change type tie point is 1.2 times of secondary grid line width, the length L5 of described transition is 3mm, and described gradual change type adopts continuous gradation linkage section 7 to be connected with staged gradual change linkage section 8.Described front electrode frame 4 is that square closes frame, and the length of side L of front electrode frame 4 is 153mm, and the live width of described front electrode frame 4 is identical with secondary grid line 2 live width; Described front electrode frame 4 is provided with chamfering, and described chamfering distance is 1mm, and described each chamfering is apart from equal.Number, the position of described backplate main gate line and front electrode main gate line are corresponding, described every bar back electrode main gate line hop count is 3 sections, and every segment length L6 is 20mm, and width D 6 is 2.5mm, described every bar back electrode main gate line edge is provided with the sawtooth being uniformly distributed and putting, described sawtooth height 0.5mm.In back of the body electric field, be also provided with the occlusion area identical with back electrode position, described occlusion area length L7 is identical with back electrode length L6, and described occlusion area width D 7 is 2.5mm, and described back of the body electric field length of side L8 is 155mm; Described back of the body electric field four drift angles are provided with chamfering, and described chamfer angle is 45 °, and chamfering distance L9 is 1.5mm.
Embodiment 2: the solar cell of another kind of many main grids structure, comprise front electrode, backplate and back of the body electric field, described front electrode comprises 4 main gate line 1, secondary grid line 2, thin grid line 3 and front electrode frame 4, be parallel to each other between described main gate line 1, and symmetrical distribution placed in the middle, the space D of adjacent main grid line 1 is 39mm; The direction that main gate line 1 is perpendicular is provided with 92 secondary grid lines 2, between described adjacent pair grid line 2, is connected with 46 and the thin grid line 3 paralleled with main gate line 1.Main gate line 1 adopts through type, and described through type main gate line is full hollow out, and pierced pattern is square, and length L3 is 145 mm, and width D 3 is 0.2 ~ 1.5mm.Described main gate line 1 top is also provided with breeze way, described breeze way is ladder gradual change type, and described breeze way includes 1 buffering lines, and described every bar buffering line length L4 is 4mm, the width D 41 connecting main gate line 1 place is 1.2mm, and the width D 42 connecting front electrode frame 4 place is 0.04mm.Described secondary grid line 2 is non-gradual change type with main gate line 1 coupling part, and the width of described non-gradual change type tie point is 0.035mm.Described front electrode frame 4 is that square closes frame, and the length of side L of front electrode frame 4 is 153mm, and the live width of described front electrode frame 4 is identical with secondary grid line 2 live width; Described front electrode frame 4 is provided with chamfering, and described chamfering distance is 1mm, and described each chamfering is apart from equal.Number, the position of described backplate main gate line and front electrode main gate line are corresponding, described every bar back electrode main gate line hop count is 3 sections, and every segment length L6 is 20mm, and width D 6 is 2.0mm, described every bar back electrode main gate line edge is provided with the sawtooth being uniformly distributed and putting, described sawtooth height 0.5mm.In back of the body electric field, be also provided with the occlusion area identical with back electrode position, described occlusion area length L7 is identical with back electrode length L6, and described occlusion area width D 7 is 2.0mm, and described back of the body electric field length of side L8 is 155mm; Described back of the body electric field four drift angles are provided with chamfering, and described chamfer angle is 45 °, and chamfering distance L9 is 1.5mm.
Claims (10)
1. the solar cell of main grid structure more than a kind, comprise front electrode, backplate and back of the body electric field, it is characterized in that: described front electrode comprises the main gate line (1) of more than 4 or 4, secondary grid line (2), thin grid line (3) and front electrode frame (4), described main gate line is parallel to each other between (1), and symmetrical distribution placed in the middle, the space D of described adjacent main grid line (1) is front electrode frame (4) length of side L/ N1(main gate line number) ± 10mm; Described main gate line (1) adopts segmented or through type, and described segmented or through type main gate line region are equipped with hollow out, and described main gate line (1) top is also provided with breeze way; The direction that described main gate line (1) is perpendicular is provided with the secondary grid line (2) of some, between described adjacent pair grid line (2), is connected with some and the thin grid line (3) paralleled with main gate line (1); Number, the position of described backplate main gate line and front electrode main gate line are corresponding.
2. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: described segmented main gate line comprises openwork part (5) and non-openwork part (6), the hop count of described openwork part is 4 ~ 10 sections, every segment length L1 is 5 ~ 30mm, width D 1 is 0.2 ~ 2.0mm, the every segment length L2 of non-openwork part is 4 ~ 20mm, and width D 2 is 0.15 ~ 0.5mm.
3. the solar cell of many main grids structure as claimed in claim 1, is characterized in that: described through type main gate line is full hollow out, and length L3 is greater than 3/4 of the silicon chip length of side, and width D 3 is 0.2 ~ 1.5mm.
4. the solar cell of the many main grids structure as described in claim 1,2 or 3, is characterized in that: the pierced pattern in described segmented or through type main gate line region is circular, square, rhombus, ellipse, line strip or irregular shape.
5. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: described breeze way is continuous gradation formula or ladder gradual change type, described breeze way includes the buffering lines of more than 1 or 1, described every bar buffering line length L4 is 0 ~ 20mm, the width D 41 connecting main gate line (1) place is 0.03 ~ 1.5mm, and the width D 42 connecting front electrode frame (4) place is 0.02 ~ 1.5mm.
6. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: described secondary grid line (2) and main gate line (1) coupling part are gradual change type or non-gradual change type, the width D 5 of described gradual change type tie point is 1 ~ 4 times of secondary grid line width, the length L5 of described transition be 0.02mm to 1/2 of main gate line spacing, described gradual change type adopts continuous gradation linkage section (7) and/or staged gradual change linkage section (8) to connect.
7. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: described front electrode frame (4) is the closed frame of square, the length of side L of described front electrode frame (4) is the Lc(cell piece length of side)-0.5 ~ Lc-6mm, the live width of described positive electrode frame (4) is identical with secondary grid line (2) live width; Described positive electrode frame (4) is provided with chamfering, and described chamfering distance is 0.5 ~ 2mm, and described each chamfering distance is equal or unequal.
8. the solar cell of many main grids structure as claimed in claim 1, is characterized in that: described secondary grid line quantity is 50 ~ 150, and width is 0.02 ~ 0.12mm.
9. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: described every bar back electrode main gate line hop count is 1 ~ 6 section, every segment length L6 is 6mm ~ Lc, width D 6 is 0.8 ~ 3.0mm, described every bar back electrode main gate line edge is provided with the sawtooth being uniformly distributed and putting, the high 0.2 ~ 1mm of described sawtooth.
10. the solar cell of many main grids structure as claimed in claim 1, it is characterized in that: in described back of the body electric field, be provided with the occlusion area identical with back electrode position, described occlusion area length L7 is identical with back electrode length L6, described occlusion area width D 7 is D6 ~ D6-0.5mm, and described back of the body electric field length of side L8 is Lc ~ Lc-4mm; Described back of the body electric field four drift angles are provided with chamfering, and described chamfer angle is 45 °, and chamfering distance L9 is 0.5 ~ 2.5mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410536518.7A CN104282789A (en) | 2014-10-13 | 2014-10-13 | Solar cell of multi-main-grid structure |
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| CN201410536518.7A CN104282789A (en) | 2014-10-13 | 2014-10-13 | Solar cell of multi-main-grid structure |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679852B (en) * | 2016-03-25 | 2017-03-08 | 常州天合光能有限公司 | A kind of solar cell main grid patterning for being suitable for MBB technology |
| CN107910384A (en) * | 2017-11-29 | 2018-04-13 | 江苏彩虹永能新能源有限公司 | A kind of more main grid solar cells |
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| CN110030899A (en) * | 2019-05-17 | 2019-07-19 | 东莞市特马电子有限公司 | A kind of rapid sorting digital display calliper gauge and quick sorting method |
| CN110707161A (en) * | 2019-11-20 | 2020-01-17 | 通威太阳能(眉山)有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
| CN111276549A (en) * | 2018-11-20 | 2020-06-12 | 成都晔凡科技有限公司 | Battery piece for laminated assembly, laminated assembly and method for preparing battery piece |
| CN113594273A (en) * | 2021-08-27 | 2021-11-02 | 浙江晶科能源有限公司 | Battery piece and photovoltaic module |
| CN113782425A (en) * | 2021-09-01 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Solar cell and manufacturing method thereof |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679852B (en) * | 2016-03-25 | 2017-03-08 | 常州天合光能有限公司 | A kind of solar cell main grid patterning for being suitable for MBB technology |
| CN107910384A (en) * | 2017-11-29 | 2018-04-13 | 江苏彩虹永能新能源有限公司 | A kind of more main grid solar cells |
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| US11018267B2 (en) | 2018-11-20 | 2021-05-25 | Chengdu Yefan Science And Technology Co., Ltd. | Solar cells for shingled solar cell module, shingled solar cell module, and method of making solar cells |
| CN111276549A (en) * | 2018-11-20 | 2020-06-12 | 成都晔凡科技有限公司 | Battery piece for laminated assembly, laminated assembly and method for preparing battery piece |
| CN111276549B (en) * | 2018-11-20 | 2021-03-09 | 成都晔凡科技有限公司 | Battery piece for laminated assembly, laminated assembly and method for preparing battery piece |
| US10998453B2 (en) | 2018-11-20 | 2021-05-04 | Chengdu Yefan Science And Technology Co., Ltd. | Solar cells for shingled solar cell module, shingled solar cell module, and method of making solar cells |
| US10998454B2 (en) | 2018-11-20 | 2021-05-04 | Chengdu Yefan Science And Technology Co., Ltd. | Solar cells for shingled solar cell module, shingled solar cell module, and method of making solar cells |
| US11018268B2 (en) | 2018-11-20 | 2021-05-25 | Chengdu Yefan Science And Technology Co., Ltd. | Solar cells for shingled solar cell module, shingled solar cell module, and method of making solar cells |
| CN110030899A (en) * | 2019-05-17 | 2019-07-19 | 东莞市特马电子有限公司 | A kind of rapid sorting digital display calliper gauge and quick sorting method |
| CN110707161A (en) * | 2019-11-20 | 2020-01-17 | 通威太阳能(眉山)有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
| CN113594273A (en) * | 2021-08-27 | 2021-11-02 | 浙江晶科能源有限公司 | Battery piece and photovoltaic module |
| CN113594273B (en) * | 2021-08-27 | 2023-08-15 | 浙江晶科能源有限公司 | Battery piece and photovoltaic module |
| CN113782425A (en) * | 2021-09-01 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Solar cell and manufacturing method thereof |
| CN113782425B (en) * | 2021-09-01 | 2024-06-11 | 浙江爱旭太阳能科技有限公司 | Solar cell manufacturing method and solar cell |
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Application publication date: 20150114 |