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CN203456476U - Crystalline silica solar cell front electrode - Google Patents

Crystalline silica solar cell front electrode Download PDF

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Publication number
CN203456476U
CN203456476U CN201320596139.8U CN201320596139U CN203456476U CN 203456476 U CN203456476 U CN 203456476U CN 201320596139 U CN201320596139 U CN 201320596139U CN 203456476 U CN203456476 U CN 203456476U
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China
Prior art keywords
grid line
line metal
metal electrode
main grid
electrode
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Expired - Lifetime
Application number
CN201320596139.8U
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Chinese (zh)
Inventor
陈奕峰
皮尔·威灵顿
杨阳
徐冠超
张舒
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Trina Solar Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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Priority to CN201320596139.8U priority Critical patent/CN203456476U/en
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Abstract

The utility model relates to a crystalline silica solar cell front electrode. The crystalline silica solar cell front electrode comprises multiple parallel fine grid line metal electrodes and multiple lines of parallel main grid line metal electrodes perpendicular to the fine grid line metal electrodes. Each line of the main grid line metal electrodes is composed of multiple main grid line metal electrode segments. The disconnected portion between every two main grid line metal segments in each line of the main grid line metal electrodes is located in a blank zone between two adjacent fine grid line metal electrodes. By employing the crystalline silica solar cell front electrode, the metal slurry consumption of main grids is effectively reduced, and the distance of the fine grid line metal electrodes converging to the main grid line metal electrodes is not increased, so that the series resistance of a cell is likely to be reduced, and the cell efficiency is improved.

Description

Electrode before a kind of crystal-silicon solar cell
Technical field
The utility model relates to the front electrode of a kind of crystal-silicon solar cell.
Background technology
At present, the front electrode of crystal-silicon solar cell generally has many thin grid line metal electrodes, for collecting the photogenerated current of solar cell.Perpendicular to thin grid line metal electrode direction, be generally also provided with 2~3 main grid line metal electrodes, the electric current that this main grid line metal electrode is collected thin grid line metal electrode confluxes, and can be used for welding and is welded to connect, and carries out assembly preparation.Yet also there are at present several problems in the design of main grid line metal electrode: 1, front surface metal electrode has occupied approximately 5~7% area, and solar cell front surface has been formed and blocked; 2, front surface metal electrode region footprint area means more greatly larger silver slurry consumption; 3, the spacing between main grid line metal electrode is larger, is unfavorable for reducing the serial loss of battery; The reason of these several respects has restricted the lifting of current commercialization efficiency of solar cell and the control of cost.
Utility model content
Technical problem to be solved in the utility model is: provide a kind of crystal-silicon solar cell front electrode, reduce front surface metal electrode blocking battery, reduce front surface metal electrode silver slurry consumption, for reducing the series resistance of battery, provide possibility simultaneously, improve battery efficiency.
The utility model solves the technical scheme that its technical problem adopts: electrode before a kind of crystal-silicon solar cell, comprise the many thin grid line metal electrodes that are parallel to each other and the main grid line metal electrode being parallel to each other perpendicular to the multiple row of thin grid line metal electrode, the main grid line metal electrode of every row consists of the main grid line metal electrode segmentation of multistage, the white space of the breaking part between the main grid line metal electrode segmentation in the main grid line metal electrode of every row between two adjacent thin grid line metal electrodes.Both effectively reduced the metal paste consumption of main grid, and do not increased again thin grid line metal electrode and conflux to the distance of main grid line metal electrode.
Main grid line metal electrode is segmented into complete interstitital texture, or is engraved structure.Engraved structure can further reduce the consumption of metal paste.
Be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes.
In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in the main grid line metal electrode of every row equidistantly distributes.
Be parallel to the direction of thin grid line metal electrode, the breaking part between main grid line metal electrode segmentation is interspersed or is regularly multiple row and distributes.
The columns of main grid line metal electrode is greater than 4, and the radical of thin grid line metal electrode is greater than 30, and the hop count of the main grid line metal electrode of every row is greater than 2.By increasing the radical of main grid line metal electrode, dwindle the spacing between main grid line metal electrode, reduce electric current and from thin grid line, flow to the series resistance loss of main grid line, improve the conversion efficiency of battery, the spacing simultaneously reducing between main grid line metal electrode can also reduce optimized thin grid line number, reduces the consumption of the metal paste of thin grid line.
Be parallel to the direction of thin grid line metal electrode, the spacing 0.1~200mm between main grid line metal electrode, the width of main grid line metal electrode is 0.1mm~3mm.
Thin grid line metal electrode equidistantly distributes, and the width of thin grid line metal electrode is 1~100 μ m, and the spacing between thin grid line metal electrode is 0.1~10mm.
Before this crystal-silicon solar cell, one of them prioritization scheme of battery is: the columns of main grid line metal electrode is 5, the hop count of the main grid line metal electrode of every row is 3, be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes, and the breaking part between main grid line metal electrode segmentation is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in the main grid line metal electrode of every row equidistantly distributes.
Before this crystal-silicon solar cell, another prioritization scheme of battery is: the columns of main grid line metal electrode is 6, the hop count of the main grid line metal electrode of every row is 3, be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes, and the breaking part between main grid line metal electrode segmentation is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in the main grid line metal electrode of every row equidistantly distributes.
The beneficial effects of the utility model are: contrast conventional solar cell front surface patterns,
1, be parallel to the direction of thin grid line metal electrode, by increasing the hop count of main grid line metal electrode, dwindle the spacing between main grid line metal electrode, reduce electric current and from thin grid line, flow to the series resistance loss of main grid line, improve the conversion efficiency of battery, reduce simultaneously and can also reduce optimized thin grid line number between the main grid line metal electrode of this direction, reduce the consumption of the metal paste of thin grid line;
2, perpendicular to thin grid line direction, adopt the main grid line metal electrode of segmentation to replace whole main grid line metal electrode of tradition, and the white space of the breaking part between main grid line metal electrode segmentation between two adjacent thin grid line metal electrodes, both effectively reduced the metal paste consumption of main grid, and do not increased again thin grid line metal electrode and conflux to the distance of main grid line metal electrode.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is further illustrated;
Fig. 1 is the structural representation of electrode before current conventional solar cell;
Fig. 2 is the structural representation of the main grid line metal electrode of array of embodiment 1 of the present utility model;
Fig. 3 is the structural representation of the main grid line metal electrode of array of embodiment 2 of the present utility model;
Fig. 4 is the structural representation of the main grid line metal electrode of alternating expression of embodiment 3 of the present utility model;
Fig. 5 is the structural representation of the main grid line metal electrode of hollow out form of the present utility model;
Wherein, 1. main grid line metal electrode, the main grid line metal electrode segmentation of 1-1., 1-2. hollow dots, 2. thin grid line metal electrode, 3. thin grid line central point.
Embodiment
Electrode before a kind of crystal-silicon solar cell, comprise the many thin grid line metal electrodes that are parallel to each other 2 and the main grid line metal electrode 1 being parallel to each other perpendicular to the multiple row of thin grid line metal electrode 2, the main grid line metal electrode 1 of every row consists of the main grid line metal electrode segmentation of multistage, the white space of breaking part between main grid line metal electrode segmentation 1-1 in the main grid line metal electrode 1 of every row between two adjacent thin grid line metal electrodes 2, between main grid line metal electrode segmentation without any connection.
Main grid line metal electrode is segmented into complete interstitital texture, or is engraved structure.Engraved structure can further reduce the consumption of metal paste.The structure of the main grid line metal electrode of hollow out form as shown in Figure 5, a plurality of hollow dots 1-2 of regular distribution on main grid line metal electrode.
In the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is interspersed or is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, the breaking part between the main grid line metal electrode segmentation 1-1 in the main grid line metal electrode 1 of every row is generally equidistant distribution, but do not get rid of non-equidistance, does not distribute.
In the direction that is parallel to thin grid line metal electrode 2, the spacing 0.1~200mm between main grid line metal electrode 1.The width of main grid line metal electrode 1 is 0.1mm~3mm.Thin grid line metal electrode 2 equidistantly distributes, and the width of thin grid line metal electrode 2 is 1~100 μ m, and the spacing between thin grid line metal electrode 2 is 0.1~10mm.
The columns of main grid line metal electrode 1 is greater than 4, and the hop count of the main grid line metal electrode 1 of every row is greater than 2, and the total number of all main grid line metal electrode segmentation 1-1 is for being greater than 11 sections; The radical of thin grid line metal electrode 2 is for being greater than 30.
The front electrode of conventional silk screen printing as shown in Figure 1, is provided with the main grid line metal electrode 1 of 3 row on 156mm * 156mm silicon chip, and 85 thin grid line metal electrodes 2.Wherein, the width of main grid line metal electrode 1 is 1.8mm, and the spacing between main grid line metal electrode 1 is 51mm, for thin grid line central point 3, the thin grid line metal electrode 2 that electric current need to flow through 25.5mm could be collected by main grid line metal electrode 1, and the series resistance of battery is 2.93m Ω .cm.
Embodiment 1: (this Fig. 2 is only signal, and for avoiding grid line too intensive, part grid line does not show) as shown in Figure 2, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, is provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, breaking part between main grid line metal electrode segmentation 1-1 in the main grid line metal electrode 1 of every row equidistantly distributes, have the main grid line metal electrode 1 of 5 row, the hop count of the main grid line metal electrode 1 of every row is 3 sections, have 15 sections of main grid line metal electrode segmentation 1-1, main grid line metal electrode 1 is 5 * 3 rectangular array formulas and distributes.The width of main grid line metal electrode 1 is 1.0mm., the spacing between the center line of main grid line metal electrode 1 is 30.6mm, is provided with 80 thin grid line metal electrodes that are parallel to each other 2 simultaneously.
Therefore, the distance that electric current flows to main grid line metal electrode 1 from thin grid line central point 3 is 15.3mm, and much smaller than the 25.5mm of conventional batteries, the series resistance of battery is reduced to 2.4m Ω .cm by 2.9m Ω .cm, with respect to conventional structure, has reduced series resistance.Because the series resistance of thin grid line metal electrode 2 to main grid line metal electrode 1 reduces, therefore the gap variable of thin grid line metal electrode 2 is large, thin grid line metal electrode 2 numbers are 80 in the present embodiment, have saved the metal paste consumption of 5 thin grid line metal electrodes 2 with respect to conventional structure.Meanwhile, for main grid line metal electrode 1, perpendicular to thin grid line metal electrode 2 directions, adopt 3 sections of main grid line metal electrode segmentation 1-1 to replace a complete main grid line metal electrode 1, saved main grid part metals slurry consumption.
Embodiment 2: (this Fig. 3 is only signal, and for avoiding grid line too intensive, part grid line does not show) as shown in Figure 3, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, is provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, breaking part between main grid line metal electrode segmentation 1-1 in the main grid line metal electrode 1 of every row equidistantly distributes, have the main grid line metal electrode 1 of 6 row, the hop count of the main grid line metal electrode 1 of every row is 24 sections, each section of main grid line metal electrode segmentation 1-1 connects 3 thin grid line metal electrodes 2, the width of main grid line metal electrode 1 is 1.0mm, contrast conventional front electrode as shown in Figure 1 can be saved 1/3 metal paste on main grid line metal electrode 1.Spacing between the center line of main grid line metal electrode 1 is 25.5mm, due to the pitch smaller between main grid line metal electrode 1, in the present embodiment, adopt 72 thin grid lines, with respect to conventional structure, saved the metal paste consumption of 13 thin grid lines, adopt this front electrode structure, series resistance is 2.7m Ω .cm, with respect to conventional structure battery, has reduced series resistance.
Embodiment 3: as shown in Figure 4, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, is provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is interspersed.In the direction perpendicular to thin grid line metal electrode 2, the breaking part between the main grid line metal electrode segmentation 1-1 in the main grid line metal electrode 1 of every row equidistantly distributes, and has the main grid line metal electrode 1 of 6 row, and each hop count that is listed as main grid line metal electrode 1 is all different.

Claims (10)

1. electrode before a crystal-silicon solar cell, it is characterized in that: comprise the many thin grid line metal electrodes that are parallel to each other (2) and the main grid line metal electrode (1) being parallel to each other perpendicular to the multiple row of thin grid line metal electrode (2), the main grid line metal electrode of every row (1) consists of the main grid line metal electrode segmentation of multistage, and the breaking part between the main grid line metal electrode segmentation (1-1) in the main grid line metal electrode of every row (1) is positioned at the white space between two adjacent thin grid line metal electrodes (2).
2. electrode before crystal-silicon solar cell according to claim 1, is characterized in that: described main grid line metal electrode segmentation (1-1) is complete interstitital texture, or is engraved structure.
3. electrode before crystal-silicon solar cell according to claim 1, is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), between main grid line metal electrode (1), equidistantly distribute.
4. electrode before crystal-silicon solar cell according to claim 1, is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), the breaking part between main grid line metal electrode segmentation (1-1) is interspersed or is regularly multiple row and distributes.
5. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: in the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in the main grid line metal electrode of every row (1) equidistantly distributes.
6. electrode before crystal-silicon solar cell according to claim 1, is characterized in that: the columns of main grid line metal electrode (1) is greater than 4, and the radical of thin grid line metal electrode (2) is greater than 30, and the hop count of the main grid line metal electrode of every row (1) is for being greater than 2.
7. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), spacing 0.1~200mm between main grid line metal electrode (1), the width of main grid line metal electrode (1) is 0.1mm~3mm.
8. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: thin grid line metal electrode (2) equidistantly distributes, the width of thin grid line metal electrode (2) is 1~100 μ m, and the spacing between thin grid line metal electrode (2) is 0.1~10mm.
9. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: the columns of main grid line metal electrode (1) is 5, the hop count of the main grid line metal electrode of every row (1) is 3, in the direction that is parallel to thin grid line metal electrode (2), main grid line metal electrode (1) equidistantly distributes, and the breaking part between main grid line metal electrode segmentation (1-1) is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in the main grid line metal electrode of every row (1) equidistantly distributes.
10. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: the columns of main grid line metal electrode (1) is 6, the hop count of the main grid line metal electrode of every row (1) is 3, in the direction that is parallel to thin grid line metal electrode (2), main grid line metal electrode (1) equidistantly distributes, and the breaking part between main grid line metal electrode segmentation (1-1) is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in the main grid line metal electrode of every row (1) equidistantly distributes.
CN201320596139.8U 2013-09-23 2013-09-23 Crystalline silica solar cell front electrode Expired - Lifetime CN203456476U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015039500A1 (en) * 2013-09-23 2015-03-26 常州天合光能有限公司 Front electrode of crystal silicon solar cell
CN111640818A (en) * 2020-04-29 2020-09-08 常州比太黑硅科技有限公司 Distribution and manufacturing method of solar cell conductive electrode wires
WO2022052692A1 (en) * 2020-09-08 2022-03-17 东方日升(常州)新能源有限公司 Solar battery metal electrode structure and battery assembly

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015039500A1 (en) * 2013-09-23 2015-03-26 常州天合光能有限公司 Front electrode of crystal silicon solar cell
CN111640818A (en) * 2020-04-29 2020-09-08 常州比太黑硅科技有限公司 Distribution and manufacturing method of solar cell conductive electrode wires
CN111640818B (en) * 2020-04-29 2022-04-22 常州比太黑硅科技有限公司 Distribution and manufacturing method of solar cell conductive electrode wires
WO2022052692A1 (en) * 2020-09-08 2022-03-17 东方日升(常州)新能源有限公司 Solar battery metal electrode structure and battery assembly

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C14 Grant of patent or utility model
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CP01 Change in the name or title of a patent holder

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: trina solar Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd.

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: TRINASOLAR Co.,Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: trina solar Ltd.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20140226

CX01 Expiry of patent term