CN110707161A - Screen printing plate structure of monocrystalline silicon solar cell - Google Patents
Screen printing plate structure of monocrystalline silicon solar cell Download PDFInfo
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- CN110707161A CN110707161A CN201911145069.2A CN201911145069A CN110707161A CN 110707161 A CN110707161 A CN 110707161A CN 201911145069 A CN201911145069 A CN 201911145069A CN 110707161 A CN110707161 A CN 110707161A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000007650 screen-printing Methods 0.000 title abstract description 11
- 238000005192 partition Methods 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 description 16
- 238000003466 welding Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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Abstract
The invention discloses a screen printing plate structure of a monocrystalline silicon solar cell, which relates to the technical field of solar cells and comprises a cell, wherein the front surface of the cell is provided with a plurality of front electrode areas, main grid lines are arranged between every two adjacent front electrode areas, partition areas are arranged in the middle parts of the main grid lines, the main grid lines are vertically connected with a plurality of auxiliary grid lines positioned on the front electrode areas, two tail ends of each main grid line are connected with the most marginal auxiliary grid line, and anti-breaking grid lines are connected between every two adjacent auxiliary grid lines.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a screen printing plate structure of a monocrystalline silicon solar cell.
Background
With the rapid development of crystalline silicon photovoltaic technology, the expansion of the production scale of solar cells and the drive of the intrinsic quality benefit, how to reduce the cost and improve the efficiency becomes the central importance of the large-scale production of the cells. Currently, the most common crystalline silicon cells include single crystal silicon solar cells, polycrystalline silicon solar cells and amorphous silicon solar cells, and quasi-single crystal or quasi-single crystal solar cells are solar cells on a common substrate of single crystal silicon and polycrystalline silicon. More than 90% of the crystalline silicon solar cells adopt a screen printing technology to enable the metal paste to be in contact with the silicon substrate, and therefore the photoproduction current of the solar cell is led out.
In the existing monocrystalline silicon solar cell technology, a screen printing positive electrode screen printing plate structure is adopted on the front surface of a cell, metal Ag slurry is extruded and printed on the front surface of a cell piece from a non-photosensitive adhesive film area, and the metal Ag slurry is dried, sintered and then reacts with a solar cell substrate to be fused into a whole. If the coverage of the Ag paste is too small, the metal conduction resistance of the positive electrode increases, and the current collection rate is low. Although the incident light and the conduction resistance are balanced as much as possible in the currently commonly used 5BB solid main grid line structure, the solid area in the middle of the main grid line does not play a leading role in collecting photon-generated carriers, and meanwhile, the shading area and the Ag slurry consumption are increased. The other connecting position is a plurality of auxiliary grid line regions vertically connected with the main grid line, the conduction current collected in the region is converged to the maximum value, the metal conduction resistance of the positive electrode is required to be the lowest, but the conventional auxiliary grid line with uniform cross section area is difficult to meet the requirement of reducing the resistance value. With the development of the trend of improving efficiency, the main grid lines and the auxiliary grid lines of the positive electrode on the front side of the battery are gradually narrowed and thinned to reduce the use amount of shading and Ag paste, but the defects of net blocking, virtual grid printing and grid breaking and the like easily occur in the excessively-thin grid line structure, and particularly for the auxiliary grid lines only with the width of about 1/20 mm of the main grid lines, the risk of virtual grid printing and grid breaking in the middle is remarkably improved.
Secondly, the monocrystalline silicon solar cell technology adopts a screen printing back electrode screen plate overprinting structure on the back surface of the cell, metal Al slurry is extruded and printed on the back surface of the cell piece in a leaking mode to form a large-area aluminum back electric field structure, an electric field with the same direction as the original built-in electric field is formed, a high-low junction electric field is formed to block photon-generated minority carriers from moving to the back surface, open-circuit voltage is improved to improve the effect, long-wave (more than 1000nm) light can be reflected to increase short-circuit current to improve the effect, and photon-generated carriers on the back surface are collected. The back of the monocrystalline silicon solar cell is also required to be provided with a back converging electrode part which is beneficial to welding of a welding strip, and in consideration of the conductivity of metal and the weldability of forming slurry, Ag slurry or Ag-Al mixed slurry is usually selected to be embedded in an aluminum back electric field structure through screen printing, and then is dried and sintered. And the overlapped printing positions of the Al back electric field and the back Ag or Ag-Al collecting electrode are easy to generate the phenomenon of overlapping bubbling after slurry sintering at the overlapped part close to the back collecting electrode under the control of the same drying and sintering process temperature and atmosphere because organic solvent is not smoothly discharged after slurry overlapping. Therefore, a cell structure is urgently needed to cope with the above front and back electrodes of the single crystalline silicon solar cell.
Therefore, it is a realistic meaning for those skilled in the art how to solve the above technical problems.
Disclosure of Invention
The invention aims to: the invention provides a screen printing plate structure of a monocrystalline silicon solar cell, which aims to solve the technical problems that the efficiency is low due to the fact that the shading area of a positive electrode of the existing monocrystalline silicon solar cell is too large, the edges of the cell are prone to crack and break after two ends of a main grid line of the positive electrode are welded, and the current conduction of the positive electrode of the whole cell is influenced due to the broken auxiliary grid line.
The invention specifically adopts the following technical scheme for realizing the purpose:
the utility model provides a half tone structure of monocrystalline silicon solar cell, includes the battery piece, and the battery piece openly is provided with a plurality of front electrode regions, all is provided with the main grid line between the adjacent front electrode region, and the main grid line middle part all is provided with cuts off the district, and the main grid line is connected with a plurality of vice grid lines that are located the front electrode region perpendicularly, and two ends of main grid line all are connected with the vice grid line at most marginal, all are connected with between the adjacent vice grid line and prevent disconnected grid line.
Further, adjacent anti-breaking grid lines are arranged in a staggered mode.
Further, the width of the partition area is 0.04-0.36 mm.
Furthermore, a contact extension section is connected between the main grid line and the auxiliary grid line, the height of the contact extension section is larger than that of the auxiliary grid line, and the contact extension section gradually narrows from one end close to the main grid line to one end far away from the main grid line.
Further, the length of the contact extension section is 0.3-0.7mm, the width of one end, close to the main grid line, of the contact extension section is 0.6mm, and the width of one end, far away from the main grid line, of the contact extension section is 0.3 mm.
Furthermore, a plurality of strip-shaped hollow-out areas which are longitudinally arranged are arranged on the back surface of the battery piece at positions corresponding to the front electrode area, hollow-out electrodes are embedded in the strip-shaped hollow-out areas, and a plurality of strip-shaped pins which are arranged at equal intervals are perpendicularly connected to the two side ends of each hollow-out electrode.
Furthermore, the length of the strip-shaped hollow-out area is 9-18mm, and the width of the strip-shaped hollow-out area is 1.1-2.2 mm.
Furthermore, the distance between two adjacent strip-shaped hollow-out areas in the vertical direction is 17.40-31.25 mm.
Further, the length of the strip-shaped pin is 0.2-0.4mm, and the width of the strip-shaped pin is 0.1-0.2 mm.
Furthermore, the area of each strip-shaped hollow-out area is larger than the total area of the corresponding hollow-out electrodes and the strip-shaped pins.
The invention has the following beneficial effects:
1. according to the invention, the front side (namely a positive electrode) of the cell is in a partition structure, and the middle part of the main grid line is provided with the partition region, on the basis of ensuring the photo-generated carrier collection and the welding reliability of the assembly welding strip, the solid region in the middle part of the main grid line is removed, the shading area and the consumption of Ag slurry are reduced, meanwhile, in the region where the two tail ends of the main grid line are respectively in contact connection with the edge-most auxiliary grid line, the welding strip welding region for welding high temperature, high pressure and acceleration is reduced, so that the damage probability of the edge lattice structure is reduced, and the problem that the edge of the cell is easy to crack and break is avoided.
2. The contact extension section is arranged between the auxiliary grid line and the main grid line, the contact extension section can prevent the joint position of the auxiliary grid line and the main grid line from being broken, and in addition, when the conduction current collected in the region is converged to the maximum, the slurry of the contact extension section is overlapped towards the height direction to enlarge the conduction cross section area, so that the purpose of reducing the metal conduction resistance of the positive electrode is achieved, and meanwhile, the condition that the traditional auxiliary grid with uniform cross section area or the slurry of the contact extension section is singly extended towards the width direction to enlarge the shading area is avoided.
3. A plurality of strip hollow areas are formed in the back surface of the battery piece, the hollow electrodes are printed in a nested mode, a plurality of strip pins are arranged on the edges of the hollow electrodes, the slurry overlapping area is reduced on the basis that the back surface (namely a back electric field) of the battery piece and the hollow electrodes are in lap joint, and the problem that slurry sintering overlapping bubbling is easily caused when the back electrodes are close to the hollow electrodes is solved.
Drawings
Fig. 1 is a schematic front structure diagram of a screen structure of a monocrystalline silicon solar cell according to the invention;
FIG. 2 is a schematic view of a portion of the enlarged structure at A in FIG. 1;
FIG. 3 is a schematic view of the structure of a contact extension;
FIG. 4 is a schematic structural view of the top view of FIG. 3;
fig. 5 is a schematic diagram of a back structure of a screen structure of a monocrystalline silicon solar cell according to the invention;
fig. 6 is a schematic structural diagram of a strip-shaped hollow-out area.
Reference numerals: the solar cell comprises a cell 1, a main grid line 2, a partition area 3, an auxiliary grid line 4, a breakage-proof grid line 5, a contact extension section 6, a strip-shaped hollow-out area 7, a hollow-out electrode 8 and a strip-shaped pin 9.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
As shown in fig. 1 to 2, the embodiment provides a screen printing plate structure of a monocrystalline silicon solar cell, which includes a cell 1, wherein a plurality of front electrode regions are arranged on the front surface of the cell 1, main grid lines 2 are arranged between adjacent front electrode regions, partition regions 3 are arranged in the middle of the main grid lines 2, the main grid lines 2 are vertically connected with a plurality of sub-grid lines 4 located on the front electrode regions, two ends of the main grid lines 2 are connected with the sub-grid lines 4 at the outermost edge, and anti-breaking grid lines 5 are connected between adjacent sub-grid lines 4.
In the embodiment, the front side (i.e. the positive electrode) of the cell is of a partition structure, which can be generally divided into 5 front electrode regions, and the middle part of the main grid line is provided with a partition region, on the basis of ensuring the reliability of photo-generated carrier collection and assembly welding strip welding, part of the solid region in the middle part of the main grid line is removed, so that the shading area and the consumption of Ag slurry are reduced, meanwhile, in the region where the two tail ends of the main grid line are respectively in contact connection with the edge secondary grid line, the welding strip welding region for welding high temperature, high pressure and acceleration is reduced, so that the damage probability of the edge lattice structure is reduced, and the problem that the edge of the cell is easily hidden and broken is avoided.
As a preferred technical solution of this embodiment:
the adjacent anti-breaking grid lines 5 are arranged in a staggered mode. Along with the development of the trend of improving efficiency, the main grid lines and the auxiliary grid lines on the front side of the battery are gradually narrowed and thinned to reduce the use amount of shading and Ag paste, but the defects of net blocking, virtual printing and grid breaking and the like are easily caused by the excessively-thin grid line structure, so that the problem of current conduction of the positive electrode during virtual printing and grid breaking in the middle of the positive electrode partition structure is solved by the staggered anti-breaking grid line 5 structure.
As a preferred technical solution of this embodiment:
the width of the partition area 3 is 0.04-0.36mm, the design is reasonable, and the technical specification is met.
Example 2
As shown in fig. 1 to 4, this embodiment is further optimized on the basis of embodiment 1, specifically, contact extension sections 6 are connected between the main gate line 2 and the sub-gate lines 4, the height of each contact extension section 6 is greater than that of the sub-gate line 4, and the contact extension sections 6 gradually narrow from one end close to the main gate line 2 to one end far from the main gate line 2.
The length of the contact extension section 6 is 0.3-0.7mm, the width of the end of the contact extension section 6 close to the main grid line 2 is 0.6mm, and the width of the end of the contact extension section 6 far away from the main grid line 2 is 0.3 mm.
In this embodiment, the contact extension section can prevent the joint position of the secondary grid line and the main grid line from being broken, and when the collected conduction current in the region is converged to the maximum, the slurry of the contact extension section is overlapped towards the height direction to enlarge the conduction cross-sectional area, so that the purpose of reducing the metal conduction resistance of the positive electrode is achieved, and meanwhile, the situation that the traditional secondary grid with uniform cross-sectional area or the slurry of the contact extension section singly extends towards the width direction to enlarge the shading area is avoided.
Example 3
As shown in fig. 5 to 6, the present embodiment is further optimized on the basis of embodiment 1, specifically, the back of the battery piece 1 is provided with a plurality of longitudinally arranged bar-shaped hollow-out areas 7 at positions corresponding to the front electrode area, where each column of the bar-shaped hollow-out areas 7 can be set to 4, so that the bar-shaped hollow-out areas 7 arranged in a square array of 4X5 are integrally formed, the hollow-out electrodes 8 are embedded in the bar-shaped hollow-out areas 7, and two side ends of the hollow-out electrodes 8 are vertically connected with a plurality of bar-shaped pins 9 arranged at equal intervals.
In this embodiment, a plurality of strip-shaped hollow areas are formed in the back surface of the battery piece, the hollow electrodes are printed in a nested manner, and a plurality of strip-shaped pins are arranged at the edges of the hollow electrodes, so that the overlapping area of the paste is reduced on the basis of ensuring the lapping of the back surface (namely a back electric field) of the battery piece and the hollow electrodes, the overlapping printing area of the Al paste and the Ag/Ag-Al paste is reduced, and the problem that the back electrode is close to the hollow electrodes and the paste is easy to sinter, overlap and bubble is solved.
As a preferred technical solution of this embodiment:
the length of each strip-shaped hollow-out area 7 is 9-18mm, the width of each strip-shaped hollow-out area 7 is 1.1-2.2mm, the distance between every two adjacent strip-shaped hollow-out areas 7 in the vertical direction is 17.40-31.25mm, the length of each strip-shaped pin 9 is 0.2-0.4mm, the width of each strip-shaped pin 9 is 0.1-0.2mm, the area of each strip-shaped hollow-out area 7 is larger than the total area of the corresponding hollow-out electrode 8 and the strip-shaped pin 9, the position relation and the size structure of each strip-shaped hollow-out area, each hollow-out electrode and each strip-shaped pin are optimized, the reliability of practical application is enhanced.
The above description is only a preferred embodiment of the present invention, and not intended to limit the present invention, the scope of the present invention is defined by the appended claims, and all structural changes that can be made by using the contents of the description and the drawings of the present invention are intended to be embraced therein.
Claims (10)
1. The utility model provides a half tone structure of monocrystalline silicon solar cell, includes battery piece (1), battery piece (1) openly is provided with a plurality of front electrode regions, all is provided with main grid line (2) between the adjacent front electrode region, its characterized in that, main grid line (2) middle part all is provided with cuts off district (3), main grid line (2) are connected with a plurality of vice grid lines (4) that are located the front electrode region perpendicularly, two ends of main grid line (2) all are connected with vice grid line (4) at most marginal, all be connected with between adjacent vice grid line (4) and prevent disconnected grid line (5).
2. The screen structure of the monocrystalline silicon solar cell according to claim 1, wherein adjacent breakage-proof grid lines (5) are arranged in a staggered manner.
3. The screen structure of a monocrystalline silicon solar cell according to claim 1, characterized in that the width of the partition regions (3) is 0.04-0.36 mm.
4. The screen structure of the monocrystalline silicon solar cell of claim 1 or 2, wherein a contact extension section (6) is connected between the main grid line (2) and the secondary grid line (4), the height of the contact extension section (6) is greater than that of the secondary grid line (4), and the contact extension section (6) is gradually narrowed from one end close to the main grid line (2) to one end far away from the main grid line (2).
5. The screen structure of the monocrystalline silicon solar cell of claim 4, wherein the length of the contact extension section (6) is 0.3-0.7mm, the width of the end of the contact extension section (6) close to the main grid line (2) is 0.6mm, and the width of the end of the contact extension section (6) far away from the main grid line (2) is 0.3 mm.
6. The screen structure of the monocrystalline silicon solar cell according to claim 1, wherein a plurality of strip-shaped hollow-out areas (7) arranged longitudinally are formed on the back surface of the cell piece (1) at positions corresponding to the front electrode areas, hollow-out electrodes (8) are embedded in the strip-shaped hollow-out areas (7), and a plurality of strip-shaped pins (9) arranged at equal intervals are vertically connected to both side ends of the hollow-out electrodes (8).
7. The screen structure of the monocrystalline silicon solar cell according to claim 6, wherein the length of the strip-shaped hollow-out areas (7) is 9-18mm, and the width of the strip-shaped hollow-out areas (7) is 1.1-2.2 mm.
8. The screen structure of the monocrystalline silicon solar cell according to claim 6, wherein the distance between two adjacent strip-shaped hollow-out areas (7) in the vertical direction is 17.40-31.25 mm.
9. The screen structure of a monocrystalline silicon solar cell according to claim 6, characterized in that the length of the strip-shaped leads (9) is 0.2-0.4mm and the width of the strip-shaped leads (9) is 0.1-0.2 mm.
10. The screen structure of monocrystalline silicon solar cells according to any one of claims 6 to 9, characterized in that the area of each strip-shaped hollow-out area (7) is larger than the total area of the corresponding hollow-out electrode (8) plus the strip-shaped lead (9).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911145069.2A CN110707161A (en) | 2019-11-20 | 2019-11-20 | Screen printing plate structure of monocrystalline silicon solar cell |
| PCT/CN2020/108875 WO2021098295A1 (en) | 2019-11-20 | 2020-08-13 | Screen printing plate structure of monocrystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911145069.2A CN110707161A (en) | 2019-11-20 | 2019-11-20 | Screen printing plate structure of monocrystalline silicon solar cell |
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| CN110707161A true CN110707161A (en) | 2020-01-17 |
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| WO (1) | WO2021098295A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021098295A1 (en) * | 2019-11-20 | 2021-05-27 | 通威太阳能（成都）有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
| CN114122167A (en) * | 2021-12-14 | 2022-03-01 | 苏州腾晖光伏技术有限公司 | MWT battery positive pole structure |
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| CN117790596A (en) * | 2021-08-27 | 2024-03-29 | 晶科能源股份有限公司 | Photovoltaic cell piece Battery assembly and preparation process |
| CN114361291B (en) * | 2021-12-24 | 2023-12-01 | 通威太阳能（安徽）有限公司 | Heavily doped silicon wafer, crystalline silicon solar cell and preparation method thereof |
| CN116061548B (en) * | 2022-11-29 | 2024-06-14 | 浙江微铸科技有限公司 | Composite screen printing plate |
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| CN114122167A (en) * | 2021-12-14 | 2022-03-01 | 苏州腾晖光伏技术有限公司 | MWT battery positive pole structure |
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| WO2021098295A1 (en) | 2021-05-27 |
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