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CH656021A5 - Procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile. - Google Patents

Procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile. Download PDF

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Publication number
CH656021A5
CH656021A5 CH5786/83A CH578683A CH656021A5 CH 656021 A5 CH656021 A5 CH 656021A5 CH 5786/83 A CH5786/83 A CH 5786/83A CH 578683 A CH578683 A CH 578683A CH 656021 A5 CH656021 A5 CH 656021A5
Authority
CH
Switzerland
Prior art keywords
pellet
welding
flame
noble metal
semiconductor
Prior art date
Application number
CH5786/83A
Other languages
English (en)
Inventor
Luciano Gandolfi
Antonio Grasso
Antonio Perniciaro
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of CH656021A5 publication Critical patent/CH656021A5/it

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01059—Praseodymium [Pr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

656 021
2

Claims (4)

RIVENDICAZIONI
1. Procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile, comprendente l'applicazione di una pastiglia di materiale saldante su un supporto di metallo non nobile preriscaldato alla temperatura di fusione di detta pastiglia e la successiva deposizione della piastrina di semiconduttore sulla pastiglia medesima, caratterizzato dal fatto che, subito prima e durante l'applicazione della pastiglia di materiale saldante, detto supporto metallico è investito con una fiamma di gas riducente.
2. Procedimento secondo la rivendicazione 1, caratterizzato dal fatto che detta fiamma è mantenuta ad una temperatura inferiore a 570°C.
3. Procedimento secondo la rivendicazione 1, caratterizzato dal fatto che detto gas riducente è a base di idrogeno.
4. Procedimento secondo la rivendicazione 3, caratterizzato dal fatto che detto gas riducente è formato dal 20% di idrogeno e dall'80% di azoto.
La presente invenzione concerne un procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile secondo il preambolo della rivendicazione 1.
Un metodo attualmente di largo impiego nel campo dei semiconduttori prevede che un supporto metallico di materiale non nobile (preferibilmente rame o sue leghe) sia sottoposto ad una placcatura di metallo nobile (oro o argento) prima dell'applicazione del cosiddetto «preform», ossia di una pastiglia di materiale metallico saldante che è sovrapposta al supporto metallico dopo suo riscaldamento fino alla temperatura di fusione del «preform» ed è a sua volta destinata a ricevere la piastrina dì semiconduttore.
La placcatura di metallo nobile, indispensabile per evitare che l'ossidazione del sottostante metallo non nobile impedisca l'ottenimento di una buona saldatura, rappresenta un costo non indifferente, che si riflette inevitabilmente sul costo del componente finito.
Scopo della presente invenzione è quello di realizzare un procedimento di saldatura per l'impiego suddetto, che eviti il ricorso alla suddetta placcatura di metallo nobile, garantendo nel contempo una saldatura di ottima qualità.
In accordo con l'invenzione tale scopo è raggiunto attraver-5 so un procedimento di saldatura, comprendente l'applicazione di una pastiglia di materiale saldante su un supporto di metallo non nobile preriscaldato alla temperatura di fusione di detta pastiglia e la successiva deposizione della piastrina di semiconduttore sulla pastiglia medesima, caratterizzato dal fatto che, io subito prima e durante l'applicazione della pastiglia di materiale saldante, detto supporto metallico è investito con una fiamma di gas riducente.
Detto in altre parole, il procedimento secondo l'invenzione prevede che la funzione anti-ossido finora svolta dalla placcatu-ìs ra di metallo nobile sia ora affidata ad una fiamma di gas riducente che, investendo l'area di saldatura prima e durante l'applicazione del «preform», provoca l'eliminazione degli eventuali prodotti di ossidazione e garantisce così l'ottenimento di una perfetta saldatura. Il risultato tecnico finale resta quindi inalte-20 rato, ma, essendo evitato l'impiego di un costoso metallo nobile, il costo del processo è evidentemente ridotto e con esso il costo del componente finito.
Naturalmente occorre scegliere con oculatezza sia il tipo di gas che la temperatura della fiamma, il primo in modo da ga-2s rantire il migliore effetto riducente, la seconda in modo da evitare possibili contaminazioni della piastrina di semiconduttore. In tal senso è attualmente previsto l'impiego preferito di un gas a base di idrogeno (per esempio, 20% di idrogeno e 80% di azoto) ad una temperatura di fiamma inferiore a 570°C. 30 Una volta effettuata la scelta più giusta, il metodo secondo l'invenzione può comunque essere considerato applicabile a piastrine di semiconduttore di vario genere, sia di tipo integrato che discreto, quale ad esempio un transistore.
Inoltre esso può essere impiegato per la produzione sia di 35 componenti singoli che di strisce di componenti separabili tra loro a fine processo.
Infine non è da escludere il suo impiego per la saldatura dei fili metallici della piastrina ai contatti metallici che servono per il collegamento esterno del componente.
v
CH5786/83A 1982-11-19 1983-10-25 Procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile. CH656021A5 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8224328A IT1210953B (it) 1982-11-19 1982-11-19 Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.

Publications (1)

Publication Number Publication Date
CH656021A5 true CH656021A5 (it) 1986-05-30

Family

ID=11213116

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5786/83A CH656021A5 (it) 1982-11-19 1983-10-25 Procedimento per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.

Country Status (9)

Country Link
US (1) US4615478A (it)
JP (1) JPS5994568A (it)
CH (1) CH656021A5 (it)
DE (1) DE3326322A1 (it)
FR (1) FR2536585B1 (it)
GB (1) GB2130946B (it)
IT (1) IT1210953B (it)
NL (1) NL190035C (it)
SG (1) SG89288G (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3905690A1 (de) * 1989-02-24 1990-08-30 Forschungszentrum Juelich Gmbh Verfahren zum flussmittelfreien beschichten, traenken und loeten
US6267782B1 (en) * 1997-11-20 2001-07-31 St. Jude Medical, Inc. Medical article with adhered antimicrobial metal

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB424370A (en) * 1934-01-04 1935-02-20 Carl Banscher Improvements relating to the soldering of aluminium or aluminium alloys
GB891398A (en) * 1957-09-20 1962-03-14 Western Electric Co Improvements in or relating to methods of tinning and soldering zinc-containing surfaces and to solder joints including such surfaces
US3132419A (en) * 1959-06-06 1964-05-12 Takikawa Teizo Method for soldering silicon or a silicon alloy to a diefferent metal
NL271535A (it) * 1960-11-21 1900-01-01
NL260810A (it) * 1961-02-03
US3217401A (en) * 1962-06-08 1965-11-16 Transitron Electronic Corp Method of attaching metallic heads to silicon layers of semiconductor devices
US3378361A (en) * 1965-01-29 1968-04-16 Dexco Corp Method of making a tool for removing material from workpieces and product thereof
US3555669A (en) * 1967-12-15 1971-01-19 Int Rectifier Corp Process for soldering silicon wafers to contacts
DE1803489A1 (de) * 1968-10-17 1970-05-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes
US3665590A (en) * 1970-01-19 1972-05-30 Ncr Co Semiconductor flip-chip soldering method
US3680196A (en) * 1970-05-08 1972-08-01 Us Navy Process for bonding chip devices to hybrid circuitry
US3744121A (en) * 1970-08-15 1973-07-10 Asahi Glass Co Ltd Process for soldering difficultly solderable metals, such as si, ge, al, ti, zr and ta
US3735911A (en) * 1971-04-30 1973-05-29 Ibm Integrated circuit chip repair tool
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
JPS4962345A (it) * 1972-10-18 1974-06-17
US3923609A (en) * 1973-12-19 1975-12-02 Ppg Industries Inc Method of joining silicon metal
DE2511210C3 (de) * 1975-03-14 1980-03-06 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und Vorrichtung zum Tauchlöten von Halbleiterbauelementen
US4278195A (en) * 1978-12-01 1981-07-14 Honeywell Inc. Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique
DE2923440A1 (de) * 1979-06-09 1980-12-11 Itt Ind Gmbh Deutsche Verfahren zum befestigen und/oder elektrischen verbinden von halbleiterkoerpern und/oder von deren elektrisch leitenden metallteilen
DE2939666C2 (de) * 1979-09-29 1982-07-15 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur lunkerfreien Verlötung eines metallisierten Halbleiterplättchens mit einem Träger
JPS5666374A (en) * 1979-10-31 1981-06-04 Matsushita Electric Ind Co Ltd Soldering method
JPS6133262Y2 (it) * 1980-08-14 1986-09-29
JPS5747579A (en) * 1980-09-02 1982-03-18 Mitsubishi Electric Corp Solder dipping method

Also Published As

Publication number Publication date
IT8224328A0 (it) 1982-11-19
SG89288G (en) 1989-11-17
US4615478A (en) 1986-10-07
GB2130946A (en) 1984-06-13
DE3326322C2 (it) 1989-12-21
NL8302820A (nl) 1984-06-18
FR2536585B1 (fr) 1988-09-23
DE3326322A1 (de) 1984-05-24
FR2536585A1 (fr) 1984-05-25
NL190035C (nl) 1993-10-01
GB2130946B (en) 1986-03-12
IT1210953B (it) 1989-09-29
GB8320040D0 (en) 1983-08-24
NL190035B (nl) 1993-05-03
JPS5994568A (ja) 1984-05-31

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