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Sönmezoğlu et al., 2012 - Google Patents

High performance GaAs metal-insulator–semiconductor devices using TiO2 as insulator layer

Sönmezoğlu et al., 2012

Document ID
3053087886043075637
Author
Sönmezoğlu S
Akın S
Publication year
Publication venue
Current applied physics

External Links

Snippet

In the present study, Cu/TiO2/n-GaAs Metal-Insulator–Semiconductor (MIS) structure was fabricated and the variation in electrical characteristics of this structure have been analyzed as a function of temperature using current–voltage (I–V) measurements in the temperature …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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