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Zeyrek et al., 2006 - Google Patents

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Zeyrek et al., 2006

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Document ID
11960080286830289028
Author
Zeyrek S
Altındal Ĺ
YĂĽzer H
BĂĽlbĂĽl M
Publication year
Publication venue
Applied Surface Science

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The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator– semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80–300K. By using the thermionic emission (TE) theory, the zero-bias …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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