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Wei et al., 2011 - Google Patents

Interfacial and rectifying characteristic of epitaxial SrTiO3-δ/GaAs p–n junctions

Wei et al., 2011

Document ID
15818633627621025461
Author
Wei X
Huang W
Yang Z
Hao J
Publication year
Publication venue
Scripta Materialia

External Links

Snippet

Oxygen-deficient SrTiO 3-δ thin films were grown on p-GaAs substrates to form p–n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions …
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