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Häusler et al., 2003 - Google Patents

TEM investigations of Ga (Sb, As) quantum dots grown on a seed layer of (In, Ga) As quantum dots

Häusler et al., 2003

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Document ID
2603511927145478792
Author
Häusler I
Kirmse H
Otto R
Neumann W
Müller-Kirsch L
Bimberg D
Lentzen M
Urban K
Publication year

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Snippet

Quantum dots have a lateral size of a few nanometers. Hence, quantum mechanical effects have a great influence on their optical and electronic properties. Self-organized quantum dots (QDs) form due to the relaxation of the strain field caused by the lattice mismatch …
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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