[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Timm, 2008 - Google Patents

Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

Timm, 2008

View PDF
Document ID
7025665540409108595
Author
Timm R
Publication year

External Links

Snippet

GaSb quantum dots (QDs) in a GaAs matrix exhibit a type-II band alignment with a strong hole localization and only weakly Coulomb-bound electrons, making these structures very promising for application in optoelectronic and especially charge storage devices. However …
Continue reading at depositonce.tu-berlin.de (PDF) (other versions)

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00—Manufacture or treatment of nano-structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nano-structures

Similar Documents

Publication Publication Date Title
Kiravittaya et al. Advanced quantum dot configurations
Mancini et al. Carrier localization in GaN/AlN quantum dots as revealed by three-dimensional multimicroscopy
Henini Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
Timm Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs
Ries Optical analysis of InN and InGaN nanostructures
Ranasinghe Arachchige Luminescence of droplet-etched GaAs quantum dots at varied temperature and in electric and magnetic fields
Arachchige Luminescence of droplet-etched GaAs quantum dots at varied temperature and in electric and magnetic fields
Lenz Atomic structure of capped In (Ga) As and GaAs quantum dots for optoelectronic devices
Bertram et al. Optical and Structural Properties of Nitride Based Nanostructures
Chellu Optical properties of close-to-surface self-assembled InAs/GaAs quantum dots
Chen Optoelectronic, vibrational and transport properties of III-V/Si antiphase boundaries for photonics and solar energy harvesting
Urban Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy: A versatile approach towards semipolar GaN and the characterization of single nanocolumns
Moret Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates
Greenhill Influence of Composition and Morphology on the Electronic Properties of Semiconductor Nanostructures and Alloys
Pūkienė Growth and characterization of bismide alloys for infrared sensors
Hatami Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P
박석인 Growth and Characterization of Position Controlled Droplet Epitaxy Quantum Dots
Ajay GaN/AlGaN nanowires for quantum devices
Bruls Direct profiling of III/V semiconductor nanostructures at the atomic level by cross-sectional Scanning Tunneling Microscopy
Katmis Growth and characterization of InP/In0. 48Ga0. 52P quantum dots optimized for single-photon emission
Ma Self-organized quantum wires on patterned GaAs (311) A and on unpatterned GaAs (100)
Heun et al. Photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs (001)
Frey Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures
Chellu et al. PETER THE GREAT ST. PETERSBURG POLYTECHNIC UNIVERSITY
Dais Templated self-assembly of SiGe quantum dots