[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Neumann, 2003 - Google Patents

Electron microscopy of nanostructured semiconductor materials

Neumann, 2003

Document ID
13204815139326593431
Author
Neumann W
Publication year
Publication venue
Materials chemistry and physics

External Links

Snippet

For various material systems of low dimensions, including multilayers, islands, and quantum dots, the potential applicability of transmission electron microscopy (TEM) is demonstrated. Conventional TEM is applied to elucidate size, shape, and arrangement of nanostructures …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00Nano-optics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Teichert Self-organization of nanostructures in semiconductor heteroepitaxy
Besombes et al. Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface
Joyce et al. III–V semiconductor nanowires for optoelectronic device applications
Han et al. Electronic substrate-mediated interactions
Porsche et al. Size control of self-assembled InP/GaInP quantum islands
Steele et al. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
Altfeder et al. Imaging subsurface reflection phase with quantized electrons
Eymery et al. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques
Lewis et al. Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
Gajjela et al. Atomic-scale characterization of droplet epitaxy quantum dots
Kettler et al. Single-photon and photon pair emission from MOVPE-grown In (Ga) As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm
Di Russo et al. Super-resolution optical spectroscopy of nanoscale emitters within a photonic atom probe
Shen et al. X-ray-diffraction study of size-dependent strain in quantum-wire structures
Neumann Electron microscopy of nanostructured semiconductor materials
Schuck et al. Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs (111) A quantum dots
Lewis et al. Bismuth-surfactant-induced growth and structure of InAs/GaAs (110) quantum dots
Aladyshkin et al. Observation of hidden parts of dislocation loops in thin Pb films by means of scanning tunneling spectroscopy
Owschimikow et al. Submonolayer quantum dots
Dialynas et al. Piezoelectric InAs (211) B quantum dots grown by molecular beam epitaxy: Structural and optical properties
Mintairov et al. Molecular states of electrons: emission of single molecules in self-organized InP/GaInP quantum dots
Tongbram et al. Metamorphosis of self-assembled InAs quantum dot through variation of growth rates
Drakopoulos et al. GaN polarity domains spatially resolved by x-ray standing wave microscopy
Koivusalo et al. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires
Nasi et al. Defects in nanostructures with ripened InAs/GaAs quantum dots
Ponomaryov et al. Direct determination of 3D distribution of elemental composition in single semiconductor nanoislands by scanning Auger microscopy