Hashemi et al., 2017 - Google Patents
The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operationHashemi et al., 2017
- Document ID
- 2129539103231667290
- Author
- Hashemi A
- Bahari A
- Ghasemi S
- Publication year
- Publication venue
- Applied Surface Science
External Links
Snippet
In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between …
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide 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O=[Si]=O 0 title abstract description 71
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