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Guo et al., 2017 - Google Patents

Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

Guo et al., 2017

Document ID
9401540012678088065
Author
Guo J
Yang B
Zheng Z
Jiang J
Publication year
Publication venue
Physica E: Low-dimensional Systems and Nanostructures

External Links

Snippet

Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two …
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    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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