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Walke et al., 2013 - Google Patents

Part I: Impact of field-induced quantum confinement on the subthreshold swing behavior of line TFETs

Walke et al., 2013

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Document ID
1758376831807354741
Author
Walke A
Verhulst A
Vandooren A
Verreck D
Simoen E
Rao V
Groeseneken G
Collaert N
Thean A
Publication year
Publication venue
IEEE transactions on electron devices

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Snippet

Trap-assisted tunneling (TAT) is a major hurdle in achieving a sub-60-mV/decade subthreshold swing (SS) in tunnel field-effect transistors (TFETs). This paper presents an insight into the TAT process in the presence of field-induced quantum confinement (FIQC) in …
Continue reading at www.academia.edu (PDF) (other versions)

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