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Lattanzio et al., 2011 - Google Patents

Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation

Lattanzio et al., 2011

Document ID
6905258587177900107
Author
Lattanzio L
De Michielis L
Ionescu A
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the …
Continue reading at ieeexplore.ieee.org (other versions)

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