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Rudenko et al., 2019 - Google Patents

Monte Carlo simulation of defects of a trench profile in the process of deep reactive ion etching of silicon

Rudenko et al., 2019

Document ID
1580071460946134289
Author
Rudenko M
Myakon’kikh A
Lukichev V
Publication year
Publication venue
Russian Microelectronics

External Links

Snippet

A numerical model of the evolution of a 2D profile during cryogenic etching of Si in SF 6/O 2 plasma is proposed and implemented. To calculate the fluxes of species a Monte Carlo method is used. The etch profile is presented with the help of square cells. The model is …
Continue reading at link.springer.com (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
    • G06F17/30286—Information retrieval; Database structures therefor; File system structures therefor in structured data stores
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T17/00—Three dimensional [3D] modelling, e.g. data description of 3D objects
    • G06T17/05—Geographic models
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations

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