Yan et al., 2004 - Google Patents
Pulsed laser deposition and characterization of Bi3. 25Nd0. 75Ti3O12 thin films buffered with La0. 7Sr0. 3MnO3 electrodeYan et al., 2004
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- 13051296944549450603
- Author
- Yan L
- Kong L
- Ong C
- Publication year
- Publication venue
- Materials Letters
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Bi3. 25Nd0. 75Ti3O12 (BNT) ferroelectric thin films with a thickness of∼ 0.5 μm, on substrates of Pt/Ti/SiO2/Si,(100) SrTiO3 and (100) MgO, with a 0.4-μm-thick La0. 7Sr0. 3MnO3 (LSMO) layer as bottom electrode, were deposited via pulsed laser deposition. The …
- 239000010409 thin film 0 title abstract description 48
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- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/112—Read-only memory structures [ROM] and multistep manufacturing processes therefor
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- H01L27/11502—Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes; Multistep manufacturing processes therefor
- H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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