Sato et al., 2002 - Google Patents
Preparation of Bi3. 25+ xLa0. 75Ti3O12+ y films on ruthenium electrodesSato et al., 2002
- Document ID
- 16766701834467952248
- Author
- Sato T
- Kuroiwa T
- Sugahara K
- Ishiwara H
- Publication year
- Publication venue
- Japanese journal of applied physics
External Links
Snippet
Abstract Bi 3.25+ x La 0.75 Ti 3 O 12+ y (BLT) films were prepared on Ru electrodes by the sol–gel spin-coating method. The samples crystallized at 650 C in O 2 atmosphere and showed ferroelectric properties. It was found that the ferroelectric properties were very …
- 229910052707 ruthenium 0 title description 8
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes; Multistep manufacturing processes therefor
- H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/14—Selection of switching materials
- H01L45/145—Oxides or nitrides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/12—Details
- H01L45/122—Device geometry
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/16—Manufacturing
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L49/00—Solid state devices not provided for in groups H01L27/00 - H01L47/00 and H01L51/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bharadwaja et al. | Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation | |
Celinska et al. | Effects of scaling the film thickness on the ferroelectric properties of SrBi 2 Ta 2 O 9 ultra thin films | |
US7071007B2 (en) | Method of forming a low voltage drive ferroelectric capacitor | |
Lee et al. | Highly c-axis oriented Pb (Zr, Ti) O 3 thin films grown on Ir electrode barrier and their electrical properties | |
Bhattacharyya et al. | Alternating current conduction behavior of excimer laser ablated SrBi 2 Nb 2 O 9 thin films | |
Sun et al. | Effect of annealing temperature on physical and electrical properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films on Al 2 O 3-buffered Si | |
Sato et al. | Preparation of Bi3. 25+ xLa0. 75Ti3O12+ y films on ruthenium electrodes | |
Park et al. | Characterization of Ferroelectric SrBi2Ta2 O 9 Thin Films Deposited by a Radio Frequency Magnetron Sputtering Technique | |
Cho et al. | Ferroelectric properties of sol–gel deposited Pb (Zr, Ti) O3/LaNiO3 thin films on single crystal and platinized-Si substrates | |
Roy et al. | Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films | |
Chou et al. | Electrical and dielectric properties of low-temperature crystallized Sr0. 8Bi2. 6Ta2O9+ x thin films on Ir/SiO2/Si substrates | |
Bag et al. | Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb (ZrxTi1− x) O3/RuO2 | |
Bozgeyik | Frequency dependent ferroelectric properties of BaZrO3 modified Sr0. 8Bi2. 2Ta2O9 thin films | |
Shye et al. | Effects of post-oxygen plasma treatment on Pt/(Ba, Sr) TiO3/Pt capacitors at low substrate temperatures | |
Yan et al. | Pulsed laser deposition and characterization of Bi3. 25Nd0. 75Ti3O12 thin films buffered with La0. 7Sr0. 3MnO3 electrode | |
Kim et al. | The low temperature processing for removal of metallic bismuth in ferroelectric SrBi2Ta2O9 thin films | |
Han et al. | Hydrogen post-annealing effect of the ferroelectric properties of (Pb0. 72La0. 28) Ti0. 93O3 films fabricated by pulsed laser deposition | |
Liu et al. | Microstructure and electrical properties of ferroelectric Pb (Zr0. 53Ti0. 47) O3 films on Si with TiO2 buffer layers | |
Kim et al. | Effect of bismuth excess on the crystallization of Bi3. 25La0. 75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates | |
Wu et al. | Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La 0.7 Sr 0.3 MnO 3/Pb (Zr 0.52 Ti 0.48) O 3/La 0.7 Sr 0.3 MnO 3 thin-film capacitors | |
Zanetti et al. | Ferroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential process | |
Yoon et al. | Investigation of Ta–RuO 2 diffusion barrier for high density memory capacitor applications | |
Park et al. | Preparation of semiconductive La0. 6Sr0. 4MnO3 thin films for electrode applications by using metal-organic decomposition | |
Sakamoto et al. | Synthesis and properties of intergrown Bi4Ti3O12-SrBi4Ti4O15 ferroelectric thin films by chemical solution deposition | |
Bozgeyik et al. | Ferroelectric properties of BaZrO3 doped Sr0. 8Bi2. 2Ta2O9 thin films |