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Park et al., 2018 - Google Patents

In-Line Tunnel

Park et al., 2018

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Document ID
10142772072448694887
Author
Park W
Hanna A
Kutbee A
Hussain M
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Snippet

ABSTRACT A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold …
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