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Chattopadhyay et al., 2011 - Google Patents

Impact of a spacer dielectric and a gate overlap/underlap on the device performance of a tunnel field-effect transistor

Chattopadhyay et al., 2011

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Document ID
4322813391202567940
Author
Chattopadhyay A
Mallik A
Publication year
Publication venue
IEEE Transactions on Electron Devices

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Snippet

A tunnel field-effect transistor (TFET) for which the device operation is based upon a band-to- band tunneling mechanism is very attractive for low-power ultralarge-scale integration circuits. A detailed investigation, with the help of extensive device simulations, of the effects …
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