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Kumawat et al., 2023 - Google Patents

Tunnel field effect transistor device structures: A comprehensive review

Kumawat et al., 2023

Document ID
11894606959969264457
Author
Kumawat P
Birla S
Singh N
Publication year
Publication venue
Materials Today: Proceedings

External Links

Snippet

Downscaling of metal oxide semiconductor field effect transistors (MOSFET) has resulted in increased short channel effects (SCEs), off-leakage current and subthreshold swing. At room temperature, the minimum subthreshold swing for MOSFETs is 60 mV/dec. So, MOSFET is …
Continue reading at www.sciencedirect.com (other versions)

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