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Convertino et al., 2018 - Google Patents

InGaAs-on-insulator FinFETs with reduced off-current and record performance

Convertino et al., 2018

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Document ID
4166007123002157112
Author
Convertino C
Zota C
Sant S
Eltes F
Sousa M
Caimi D
Schenk A
Czornomaz L
Publication year
Publication venue
2018 IEEE International Electron Devices Meeting (IEDM)

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In this work, we demonstrate InGaAs-on-lnsulator FinFETs on silicon with optimized on/off trade-off showing record performance. This is achieved by using carefully designed source/drain spacers and doped extensions to mitigate the off-current, typically high in …
Continue reading at iis-people.ee.ethz.ch (PDF) (other versions)

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