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Im et al., 2013 - Google Patents

Heterojunction-free GaN nanochannel FinFETs with high performance

Im et al., 2013

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Document ID
17139193582191100789
Author
Im K
Jo Y
Lee J
Cristoloveanu S
Lee J
Publication year
Publication venue
IEEE electron device letters

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Snippet

Heavily doped GaN nanochannel fin-shaped field-effect transistors (FinFETs) without heterojunction have been fabricated and characterized for the first time. Simplified pragmatical technology for GaN epitaxial growth and FinFET process was used to achieve …
Continue reading at www.researchgate.net (PDF) (other versions)

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