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Zhou et al., 2017 - Google Patents

Device technologies of GaN-on-Si for power electronics: Enhancement-mode hybrid MOS-HFET and lateral diode

Zhou et al., 2017

Document ID
9787174772977106223
Author
Zhou Q
Yang Y
Hu K
Zhu R
Chen W
Zhang B
Publication year
Publication venue
IEEE Transactions on Industrial electronics

External Links

Snippet

In this paper, a high performance enhancement-mode (E-mode) Al2O3/GaN hybrid MOS- HFET and a novel AlGaN/GaN lateral diode are experimentally demonstrated. Based on the proposed approach to engineer the dielectric/GaN positive interface fixed charges (Q it+) by …
Continue reading at ieeexplore.ieee.org (other versions)

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