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Saito et al., 2006 - Google Patents

Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications

Saito et al., 2006

Document ID
11122374731364246913
Author
Saito W
Takada Y
Kuraguchi M
Tsuda K
Omura I
Publication year
Publication venue
IEEE Transactions on electron devices

External Links

Snippet

A recessed-gate structure has been studied with a view to realizing normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications. The recessed-gate structure is very attractive for realizing normally off high …
Continue reading at ieeexplore.ieee.org (other versions)

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