[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Weinreb et al., 1999 - Google Patents

W-band InP wideband MMIC LNA with 30 K noise temperature

Weinreb et al., 1999

View PDF
Document ID
5426808457883522300
Author
Weinreb S
Lai R
Erickson N
Gaier T
Wielgus J
Publication year
Publication venue
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 99CH36282)

External Links

Snippet

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range. These results are achieved utilizing state-of- the-art InP HEMTs coupled with CPW circuit design. The paper describes the transistor …
Continue reading at ntrs.nasa.gov (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/74—Systems using reradiation of radio waves, e.g. secondary radar systems; Analogous systems
    • G01S13/76—Systems using reradiation of radio waves, e.g. secondary radar systems; Analogous systems wherein pulse-type signals are transmitted
    • G01S13/767—Responders; Transponders
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance

Similar Documents

Publication Publication Date Title
Weinreb et al. W-band InP wideband MMIC LNA with 30 K noise temperature
Leong et al. A 0.85 THz low noise amplifier using InP HEMT transistors
Deal et al. Low noise amplification at 0.67 THz using 30 nm InP HEMTs
Kangaslahti et al. Low noise amplifier for 180 GHz frequency band
Aja et al. Very low-noise differential radiometer at 30 GHz for the PLANCK LFI
Tang et al. Full Ka-band high performance InP MMIC LNA module
Forstén et al. Millimeter-wave amplifier-based noise sources in SiGe BiCMOS technology
Tang et al. Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K
May et al. High-performance W-band SiGe RFICs for passive millimeter-wave imaging
Schlechtweg et al. Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models
Pobanz et al. A high-gain monolithic D-band InP HEMT amplifier
Kallfass et al. A 300 GHz active frequency-doubler and integrated resistive mixer MMIC
Sato et al. 94-GHz band high-gain and low-noise amplifier using InP-HEMTs for passive millimeter wave imager
Wang et al. An ultra low noise W-band monolithic three-stage amplifier using 0.1-mu m pseudomorphic InGaAs/GaAs HEMT technology
Buhles et al. Design and characterization of MMIC active cold loads
Kangaslahti et al. Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer
Pospieszalski et al. Ultra-low-noise, InP field effect transistor radio astronomy receivers: State-of-the-art
Samoska et al. Cryogenic low noise MMIC amplifiers for U-Band (40–60 GHz)
Haydl et al. Compact monolithic coplanar 94 GHz front ends
Tanahashi et al. A W-band ultra low noise amplifier MMIC using GaAs pHEMT
Ma et al. A 220-GHz 110-mW Solid-State Power Combining Amplifier Based on Novel E-Plane Waveguide Magic-T
Müller et al. A novel unit cell for active switches in the millimeter-wave frequency range
Orzati et al. A V-band up-converting InP HEMT active mixer with low LO-power requirements
Yao et al. A 183-GHz FMCW Transceiver Module for Wireless Fuse Applications
Zamora et al. Advances in InP HEMT WR1. 5 Amplifier MMICs