Forstén et al., 2021 - Google Patents
Millimeter-wave amplifier-based noise sources in SiGe BiCMOS technologyForstén et al., 2021
View PDF- Document ID
- 5566477739998243315
- Author
- Forstén H
- Saijets J
- Kantanen M
- Varonen M
- Kaynak M
- Piironen P
- Publication year
- Publication venue
- IEEE Transactions on Microwave Theory and Techniques
External Links
Snippet
This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier- based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 …
- 229910000577 Silicon-germanium 0 title abstract description 13
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Varonen et al. | An MMIC low-noise amplifier design technique | |
Forstén et al. | Millimeter-wave amplifier-based noise sources in SiGe BiCMOS technology | |
Varonen et al. | A 75–116-GHz LNA with 23-K noise temperature at 108 GHz | |
Aja et al. | Very low-noise differential radiometer at 30 GHz for the PLANCK LFI | |
Bi et al. | A Low Switching-Loss W-Band Radiometer Utilizing a Single-Pole-Double-Throw Distributed Amplifier in 0.13-$\mu {\hbox {m}} $ SiGe BiCMOS | |
Plouchart et al. | A 18mw, 3.3 db nf, 60ghz lna in 32nm soi cmos technology with autonomic nf calibration | |
Ramírez et al. | Cryogenic operation of a millimeter-wave SiGe BiCMOS low-noise amplifier | |
Plouchart et al. | A 2.57 mW 5.9-8.4 GHz cryogenic FinFET LNA for qubit readout | |
Diebold et al. | A $ W $-Band Monolithic Integrated Active Hot and Cold Noise Source | |
Frounchi et al. | Millimeter-wave SiGe radiometer front end with transformer-based Dicke switch and on-chip calibration noise source | |
Tang et al. | Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K | |
Schleeh et al. | Cryogenic LNAs for SKA band 2 to 5 | |
Hur et al. | Tunable broadband MMIC active directional coupler | |
Abbasi et al. | A Low-Loss Passive $ D $-Band Phase Shifter for Calibration-Free, Precise Phase Control | |
Ehsan et al. | A robust waveguide millimeter-wave noise source | |
Bi et al. | An L-and C-band radiometer utilizing distributed active hot and cold loads with 156% fractional bandwidth | |
Pobanz et al. | A high-gain monolithic D-band InP HEMT amplifier | |
Laemmle et al. | A 62 GHz reflectometer for biomedical sensor readout in SiGe BiCMOS technology | |
Montazeri et al. | A 2–4 GHz silicon germanium cryogenic low noise amplifier MMIC | |
Frounchi et al. | A SiGe millimeter-wave front-end for remote sensing and imaging | |
May et al. | A W-band SiGe 1.5 V LNA for imaging applications | |
Kangaslahti et al. | Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer | |
Samoska et al. | Cryogenic low noise MMIC amplifiers for U-Band (40–60 GHz) | |
Russell et al. | Cryogenic self-calibrating noise parameter measurement system | |
Kettle et al. | A lattice matched InP chip set for a Ka band radiometer |