Kangaslahti et al., 2008 - Google Patents
Low noise amplifier for 180 GHz frequency bandKangaslahti et al., 2008
- Document ID
- 12228652571270054189
- Author
- Kangaslahti P
- Pukala D
- Gaier T
- Deal W
- Mei X
- Lai R
- Publication year
- Publication venue
- 2008 IEEE MTT-S International Microwave Symposium Digest
External Links
Snippet
Measurement of the humidity profile of the atmosphere is highly important for atmospheric science and weather forecasting. This sounding measurement is obtained at frequencies close to the resonance frequency of water molecules (183 GHz). We have designed and …
- 238000005259 measurement 0 abstract description 11
Classifications
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- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01Q—AERIALS
- H01Q1/00—Details of, or arrangements associated with, aerials
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. supraconductor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01Q—AERIALS
- H01Q23/00—Aerials with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01Q—AERIALS
- H01Q21/00—Aerial arrays or systems
- H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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