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Kale et al., 2017 - Google Patents

Design and investigation of dielectric engineered dopant segregated Schottky barrier MOSFET with NiSi source/drain

Kale et al., 2017

Document ID
2693498587719169341
Author
Kale S
Kondekar P
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this paper, to solve an important issue of low ON-state current in the nickel silicide (NiSi) metal source/drain Schottky barrier (SB) MOSFET (SBMOS), we have reported a novel dielectric engineered (DE) dopant segregated (DS) SBMOS structure using gate dielectric …
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