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Waldron et al., 2014 - Google Patents

InGaAs gate-all-around nanowire devices on 300mm Si substrates

Waldron et al., 2014

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Document ID
433407754525378459
Author
Waldron N
Merckling C
Teugels L
Ong P
Ibrahim S
Sebaai F
Pourghaderi A
Barla K
Collaert N
Thean A
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This …
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