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research-article

Hybrid small-signal modeling of GaN HEMTs based on improved genetic algorithm

Authors:

Juwei ZhangAuthors Info & Claims

Volume 127, Issue C

https://doi.org/10.1016/j.mejo.2022.105513

Published: 01 September 2022 Publication History

Abstract

—In this paper, an improved genetic algorithm-based hybrid direct-optimal extraction method for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm and fuzzy adaptive strategy are incorporated into genetic algorithm for model parameter optimization, to overcome the shortcoming of conventional genetic algorithm that tend to fall into local optimum solutions. The validity of proposed algorithm is verified by using a 20-element GaN HEMT small-signal equivalent circuit model under different operating conditions. The results show that the modeled S-parameters agree well with the measured S-parameters in the frequency range of 0.5–20.5 GHz.

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Cited By

Zhang LYang HYang CZhang JWang J(2024)Optimal design of mixed dielectric coaxial-annular TSV using GWO algorithm based on artificial neural networkIntegration, the VLSI Journal10.1016/j.vlsi.2024.10220597:COnline publication date: 1-Jul-2024
https://dl.acm.org/doi/10.1016/j.vlsi.2024.102205
Wei PDeng JZhang WQin J(2024)Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF methodJournal of Computational Electronics10.1007/s10825-024-02168-323:3(516-524)Online publication date: 1-Jun-2024
https://dl.acm.org/doi/10.1007/s10825-024-02168-3

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Hybrid small-signal modeling of GaN HEMTs based on improved genetic algorithm

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Information

Published In

cover image Microelectronics Journal

Microelectronics Journal Volume 127, Issue C

Sep 2022

115 pages

ISSN:0026-2692

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Elsevier Ltd.

Publisher

Elsevier Science Publishers B. V.

Netherlands

Publication History

Published: 01 September 2022

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Cited By

Zhang LYang HYang CZhang JWang J(2024)Optimal design of mixed dielectric coaxial-annular TSV using GWO algorithm based on artificial neural networkIntegration, the VLSI Journal10.1016/j.vlsi.2024.10220597:COnline publication date: 1-Jul-2024
https://dl.acm.org/doi/10.1016/j.vlsi.2024.102205
Wei PDeng JZhang WQin J(2024)Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF methodJournal of Computational Electronics10.1007/s10825-024-02168-323:3(516-524)Online publication date: 1-Jun-2024
https://dl.acm.org/doi/10.1007/s10825-024-02168-3

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