Thermal characteristics analysis of Ga2O3 and GaN devices on different substrates
As third-generation semiconductors, GaN and Ga2O3 have attracted wide attentions because their unique advantages in large-power and high-frequency fields. However, due to the self-heating effect, the device performance is lower than the ...
A FI-SPDT with high isolation based on design method of transfer function
This paper presents a design method for a Filter-Integrated Single Pole Double Throw (FI-SPDT) switch based on transfer function analysis. Combining the equivalent model of pseudomorphic High Electron Mobility Transistor (pHEMT) and its parasitic ...
Design and application of germanium based complementary TFET devices with step tunneling paths
Expanding tunneling has consistently been one of the approaches to enhance the on-state current (I o n) and performance of Tunnel Field-Effect Transistor (TFET). This paper proposes a novel structure for TFET called Step Tunneling Path TFET (STP ...
Highlights
- By incorporating a pocket,the conventional point tunneling is enhanced to step tunneling.The on-state current of the TFETs is boosted.
- The partially depleted operation mechanism enables STP-TFETs to obtain larger currents at lower gate ...
Investigation of performance dependence on transduction diaphragm design for piezoelectric micromachined ultrasonic transducers
One of the most important performance metrics for piezoelectric micromachined ultrasonic transducers (PMUTs) is their transmitting sensitivity, which is significantly dependent on the design of the transduction diaphragm. In this work, a ...
A fast-response RBCOT buck converter with second-order differential and integrator compensation based on FVF
A second-order differential and integration circuit based on a flipped voltage follower (SDI-FVF) is proposed in the paper, providing compensation ripple for the buck convert with ripple-based constant on-time (RBCOT). Additionally, an adaptive ...
A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor
This paper proposes a novel SPICE model for capturing the I–V and C–V characteristics and the switching waveforms of shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT). Due to the absence of the description of the shorted-anode ...
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques
In this article, a novel high-k and equivalent variable lateral doping 4H-SiC lateral double-diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed and calibrated by numerical simulation. The ...
Highlights
- The VLD technique combined with the high-k dielectric in the drift region, not only increases the doping concentration of the N-drift region, but also optimizes the electric field distribution in the drift region.
- The left side of the ...
A 94.5-dB SNDR 96.5-dB DR discrete-time delta-sigma modulator using FIA assisted OTA and FIR DAC feedback
This paper presents a cascode OTA assisted by a floating inverter amplifier, which offers high gain with reduced power consumption and excellent linearity. In comparison to conventional cascode OTA, it achieves approximately 30 % power savings ...
A 12-bit 2.5-bit/phase two-stage cyclic ADC with phase scaling and low-power Sub-ADC for CMOS image sensor
This paper proposed a 12-bit 2.5-bit/phase two-stage cyclic Analog-to-Digital Converter (ADC) with phase scaling and low-power Sub-ADC for CMOS image sensors. The phase scaling technique reduces the performance requirements of operational ...
A wideband inductorless LNA utilizing common-source noise-canceling and cascode configuration
The common-source noise-canceling (CSNC) and the gyrator are known for alleviating the trade-off between NF and S11 in wideband LNAs. Moreover, the departure of the input-matching stage and signal-amplifying stage in CSNC facilitates the design ...
Compact high attenuation wide rejection bandwidth 5-pole Butterworth LPF using transmission zeros in GaAs process
In this work, a systematic design method for a compact 5-pole Butterworth transverse resonance low pass filter (TR-LPF), in 0.15 μm Gallium Arsenide process, with wide rejection bandwidth (RBW), is presented. The circuit model of TR-LPF and ...
16.2-μW Super Class-AB OTA with current-reuse technique achieving 130.3-μA/μA FoM
In this paper, a single-stage Super Class-AB operational transconductance amplifier (OTA) using current reuse technique is presented. It is based on two scaled current mirrors located at the tail current nodes of input pairs, reusing the current ...
Highlights
- Transconductance is enhanced through current reuse by a factor of (1+α).
- Slew rate, open loop gain and gain-bandwidth of the OTA are simulated and analyzed.
- Adaptive biasing and local common mode feedback are utilized.
A 65-nm duty-cycle corrector achieving 10% to 90% duty-correction range with <0.86% duty-cycle error
This brief introduces a dual-loop analog duty-cycle corrector (DCC) designed to enhance the in-band phase noise performance of phase-locked loops (PLLs) by achieving precise duty cycle correction over a wide input duty cycle range. The proposed ...
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination
A high breakdown voltage (BV) β-Ga2O3 Schottky barrier diode (SBD) with fluorine ion (F−) implanted termination (FT-SBD) is proposed. Its electrical characteristics are investigated by Sentaurus TCAD. The FT-SBD features F− implantation into the ...
Highlights
- Propose a high BV β-Ga2O3 SBD with fluorine ions implanted trench termination.
- The impact of varying doses and depths of fluoride ions implantation on device performance was investigated.
- The fabrication process is simple and holds ...
A 275 pW, 0.5 V supply insensitive gate-leakage based current/voltage reference circuit for a wide temperature range of −55 to 100 °C without using amplifiers and resistors
The paper presents a 0.5 V, ultra-low power current, and voltage reference circuit in a single block, giving reference values of 90.7 pA and 288 mV. The proposed block uses proper addition of CTAT and PTAT curves, resulting in an excellent ...
A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration
In this paper, A bandgap circuit that combines the capacitively-biased diode (CBD) structure and the switch capacitor (SC) amplifier structure has been proposed. Thanks to the CBD technique, the proposed circuit achieves a relatively simple but ...
Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate
Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in ...
Efficient architecture for ocular artifacts removal from EEG: A Novel approach based on DWT-LMM
Medical practitioners use portable electroencephalogram (EEG) headset to identify Neuro Developmental Disorders (NDD). However, the analysis of EEG signals gets affected as the recorded electrical activity always contaminated with artifacts. A ...
A hybrid SAR ADC with input range extension
—This paper proposes a differential 10-bit 1 MS/s successive approximation register (SAR) analog to digital converter (ADC) with input range (IR) extension. Employing 512 capacitor units and a reference voltage V REF , it attains a ±1.875V REF ...
A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model
In this work, two-dimensional electron gas of the dual material gate Fe doped AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density model is demonstrated. The model is constructed by considering the electron charge ...
A low-light-level CMOS image sensor with a novel correlated double sampling based on CTIA
This paper presents a low-light-level CMOS image sensor featuring a novel correlated double sampling (CDS) technique based on the capacitive transimpedance amplifier (CTIA) pixel circuit. In order to achieve high sensitivity for low-light-level ...
High-performance convolutional neural network emulation via FPGA-integrated memristive circuitry
Although memristors address the potential data flow and memory access bottlenecks in traditional von Neumann architectures by moving computational operations into the storage elements, thereby improving computational efficiency and reducing ...
Analysis and design of a 0.9 V 1 GHz-BW 14.6 dBm-OIP3 broadband receiver with current-mode analog baseband in 12 nm FinFET CMOS
This study introduces a wideband LNTA-based receiver employing full current mode (FCM) signal transmission, leveraging a broadband and highly linear current-mode analog baseband (CMAB). The CMAB module comprises a shunt feedback low pass filter ...
A power-efficient CMOS image sensor with current-mode 1-bit log-gradient feature extractor for always-on object detection
This paper presents a power-efficient CMOS image sensor (CIS) for always-on object detection by using 1-bit log-gradient feature extraction in analog current domain. Compared with traditional image sensors with high-resolution ADCs, the proposed ...
Design and preparation of L-band multilayer low-group delay filter based on inner sputtering
Article propose a design for an L-band multi-layer MEMS cross-finger filter based on pore interior wall sputtering. Article analyze the structural parameters, such as resonator thickness and TSV structure, using HFSS simulation software. Findings ...
Analysis of source second-harmonic-controlled wideband extended series of continuous modes power amplifiers
In this article, an in-depth analysis is presented for the first time by considering the impact of the input nonlinearity caused by gate-source capacitance (Cgs) on the performance and broadband design of extended series of continuous modes (...