WO2024236862A1 - Light detection device and electronic equipment - Google Patents

Abstract

A light detection device according to one embodiment of the present disclosure comprises: a photoelectric conversion element having a first electrode, a second electrode disposed so as to face the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode; and a light-shielding member provided above the first electrode and having an opening through which light enters.

Description

Photodetection devices and electronic equipment

This disclosure relates to a light detection device and electronic equipment.

An imaging device has been proposed that includes multiple pixels, each of which includes a light-shielding film with a pinhole (hole) and a photodiode that is provided on a silicon substrate and photoelectrically converts light that passes through the pinhole (Patent Document 1).

International Publication No. 2022/153583

In devices that detect light, it is desirable to improve the detection performance.

It is desirable to provide an optical detection device with good detection performance.

An optical detection device according to one embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode arranged opposite the first electrode, and a photoelectric conversion film arranged between the first electrode and the second electrode, and a light-shielding member arranged above the first electrode and having an opening through which light is incident.
According to an embodiment of the present disclosure, an electronic device includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector includes a photoelectric conversion element having a first electrode, a second electrode disposed opposite the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode, and a light shielding member disposed above the first electrode and having an opening through which light is incident.
An optical detection device according to one embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode arranged opposite the first electrode, and a photoelectric conversion film arranged between the first electrode and the second electrode, and a separation portion arranged between adjacent photoelectric conversion elements.
According to an embodiment of the present disclosure, an electronic device includes an optical system and a light detection device that receives light transmitted through the optical system. The light detection device includes a photoelectric conversion element having a first electrode, a second electrode provided opposite to the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode, and a separator provided between adjacent photoelectric conversion elements.
A light detection device according to an embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode provided so as to face the first electrode, a photoelectric conversion film provided between the first electrode and the second electrode, and a light shielding member provided above the first electrode and having an opening through which light is incident. The second electrode is provided for a plurality of pixels each including a photoelectric conversion film.
According to an embodiment of the present disclosure, an electronic device includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector includes a photoelectric conversion element having a first electrode, a second electrode disposed opposite the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode, and a light shielding member disposed above the first electrode and having an opening through which light is incident. The second electrode is provided for a plurality of pixels each including a photoelectric conversion film.

FIG. 1 is a block diagram illustrating an example of a schematic configuration of an imaging device which is an example of a light detection device according to a first embodiment of the present disclosure. FIG. 2 is a diagram for explaining an example of the configuration of a pixel of the imaging device according to the first embodiment of the present disclosure. FIG. 3 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. FIG. 4 is a diagram for explaining an example of a planar configuration of the imaging device according to the first embodiment of the present disclosure. FIG. 5 is a diagram for explaining an example of a planar configuration of the imaging device according to the first embodiment of the present disclosure. FIG. 6 is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. FIG. 7 is a diagram for explaining a configuration example of the imaging device according to the first embodiment of the present disclosure. FIG. 8 is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. FIG. 9 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. FIG. 10A is a diagram for explaining an example of a manufacturing method for an imaging device according to the first embodiment of the present disclosure. FIG. 10B is a diagram for explaining an example of a manufacturing method for the imaging device according to the first embodiment of the present disclosure. FIG. 10C is a diagram for explaining an example of a manufacturing method for the imaging device according to the first embodiment of the present disclosure. FIG. 10D is a diagram for explaining an example of a manufacturing method for the imaging device according to the first embodiment of the present disclosure. FIG. 10E is a diagram for explaining an example of a manufacturing method for the imaging device according to the first embodiment of the present disclosure. FIG. 10F is a diagram for explaining an example of a manufacturing method for the imaging device according to the first embodiment of the present disclosure. FIG. 10G is a diagram for explaining an example of a manufacturing method of the imaging device according to the first embodiment of the present disclosure. FIG. 11A is a diagram for explaining a configuration example of an imaging device according to Modification 1 of the present disclosure. FIG. 11B is a diagram for explaining a configuration example of an imaging device according to Modification 1 of the present disclosure. FIG. 11C is a diagram for explaining a configuration example of an imaging device according to Modification 1 of the present disclosure. FIG. 12A is a diagram for explaining a configuration example of an imaging device according to Modification 2 of the present disclosure. FIG. 12B is a diagram for explaining a configuration example of an imaging device according to Modification 2 of the present disclosure. FIG. 12C is a diagram for explaining a configuration example of an imaging device according to Modification 2 of the present disclosure. FIG. 13 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification 3 of the present disclosure. FIG. 14 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the fourth modification of the present disclosure. FIG. 15 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the fifth modification of the present disclosure. FIG. 16 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the sixth modification of the present disclosure. FIG. 17 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the seventh modification of the present disclosure. FIG. 18 is a diagram showing another example of the cross-sectional configuration of an imaging device according to the seventh modification of the present disclosure. FIG. 19 is a diagram for explaining a configuration example of an imaging device according to Modification 8 of the present disclosure. FIG. 20 is a diagram for explaining another example configuration of an imaging device according to the eighth modification of the present disclosure. In FIG. FIG. 21 is a diagram for explaining another example configuration of an imaging device according to the eighth modification of the present disclosure. In FIG. FIG. 22 is a diagram for explaining another example configuration of an imaging device according to the eighth modification of the present disclosure. In FIG. FIG. 23 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the second embodiment of the present disclosure. FIG. 24 is a diagram illustrating an example of a planar configuration of an imaging device according to the second embodiment of the present disclosure. FIG. 25 is a diagram illustrating an example of a planar configuration of an imaging device according to the second embodiment of the present disclosure. FIG. 26A is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26B is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26C is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26D is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26E is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26F is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26G is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26H is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26I is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26J is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26K is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 26L is a diagram for explaining an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. FIG. 27 is a diagram for explaining another configuration example of the imaging device according to the second embodiment of the present disclosure. In FIG. FIG. 28A is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28B is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28C is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28D is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28E is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28F is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28G is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28H is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28I is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28J is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28K is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 28L is a diagram for explaining another example of the manufacturing method of the imaging device according to the second embodiment of the present disclosure. FIG. 29 is a diagram for explaining a configuration example of an imaging device according to Modification 9 of the present disclosure. FIG. 30 is a diagram for explaining a configuration example of an imaging device according to Modification 9 of the present disclosure. FIG. 31 is a diagram for explaining a configuration example of an imaging device according to a tenth modification of the present disclosure. FIG. 32 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to an eleventh modification of the present disclosure. FIG. 33 is a diagram for explaining an example of a planar configuration of an imaging device according to Modification 11 of the present disclosure. FIG. 34 is a diagram for explaining an example of a planar configuration of an imaging device according to Modification 11 of the present disclosure. FIG. 35 is a diagram for explaining another configuration example of an imaging device according to the eleventh modification of the present disclosure. FIG. 36 is a diagram for explaining a configuration example of an imaging device according to a twelfth modification of the present disclosure. FIG. 37 is a diagram for explaining a configuration example of an imaging device according to a twelfth modification of the present disclosure. FIG. 38 is a diagram for explaining a configuration example of an imaging device according to a twelfth modification of the present disclosure. FIG. 39 is a block diagram showing an example of the configuration of an electronic device. FIG. 40A is a schematic diagram showing an example of the overall configuration of a light detection system. FIG. 40B is a schematic diagram showing an example of the overall configuration of the light detection system. FIG. 41 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 42 is an explanatory diagram showing an example of the installation positions of the outside-vehicle information detection unit and the imaging unit. FIG. 43 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. FIG. 44 is a block diagram showing an example of the functional configuration of the camera head and the CCU.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order.
1. First embodiment 2. Modification 3. Second embodiment 4. Modification 5. Application example 6. Application example

1. First embodiment
1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a light detection device according to a first embodiment of the present disclosure. The light detection device is a device capable of detecting incident light. The imaging device 1 which is a light detection device can receive light transmitted through an optical system and generate a signal. The imaging device 1 (light detection device) has a plurality of pixels P having a photoelectric conversion unit (photoelectric conversion element) and is configured to perform photoelectric conversion of the incident light to generate a signal.

The photoelectric conversion unit of each pixel P is, for example, a photodiode, and is configured to be capable of photoelectrically converting light. The imaging device 1 has an imaging area in which a plurality of pixels P are arranged two-dimensionally in a matrix (pixel unit 100). The pixel unit 100 can also be considered a pixel array in which a plurality of pixels P are arranged.

The imaging device 1 captures incident light (image light) from a subject through an optical system (not shown) that includes an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 photoelectrically converts the received light to generate a pixel signal. The imaging device 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The imaging device 1 can be used in electronic devices such as digital still cameras, video cameras, and mobile phones.

As shown in the example of FIG. 1, the imaging device 1 has, for example, a vertical drive circuit 111, a signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and an input/output terminal 116 in the peripheral area of the pixel section 100 (pixel array). The imaging device 1 also has a plurality of pixel drive lines Lread and a plurality of vertical signal lines VSL.

In the example shown in FIG. 1, a plurality of pixel drive lines Lread are wired to the pixel section 100 for each pixel row made up of a plurality of pixels P arranged in the horizontal direction (row direction). The pixel drive lines Lread are signal lines capable of transmitting signals that drive the pixels P. The pixel drive lines Lread are configured to transmit drive signals for reading out signals from the pixels P.

In addition, in the pixel section 100, a vertical signal line VSL is wired for each pixel column composed of a plurality of pixels P arranged in the vertical direction (column direction). The vertical signal line VSL is a signal line capable of transmitting a signal from the pixel P. The vertical signal line VSL is configured to transmit a signal output from the pixel P.

The vertical drive circuit 111 is composed of, for example, a buffer, a shift register, an address decoder, etc. The vertical drive circuit 111 is configured to be able to drive each pixel P of the pixel section 100. The vertical drive circuit 111 generates signals for driving the pixels P and outputs them to each pixel P of the pixel section 100 via pixel drive lines Lread. The vertical drive circuit 111 generates, for example, signals for controlling selection transistors, signals for controlling reset transistors, etc., and supplies them to each pixel P via the pixel drive lines Lread.

The signal processing circuit 112 is configured to be able to perform signal processing of the input pixel signal. The signal processing circuit 112 has, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. As an example, the load circuit is configured by a current source capable of supplying current to the amplification transistor of the pixel P. The load circuit, together with the amplification transistor of the pixel P, forms, for example, a source follower circuit.

The signal processing circuit 112 may have an amplifier circuit configured to amplify signals read from the pixels P via the vertical signal lines VSL. A load circuit, an AD conversion circuit, etc. are provided for each of the multiple vertical signal lines VSL, for example. A load circuit, an AD conversion circuit, etc. may be provided for each pixel column of the pixel section 100.

The signal output from each pixel P selected and scanned by the vertical drive circuit 111 is input to the signal processing circuit 112 via the vertical signal line VSL. The signal processing circuit 112 performs signal processing such as AD conversion of the pixel P signal and CDS (Correlated Double Sampling).

The horizontal drive circuit 113 is composed of, for example, a buffer, a shift register, an address decoder, etc. The horizontal drive circuit 113 is configured to be able to drive the horizontal selection switches of the signal processing circuit 112. The horizontal drive circuit 113 drives each horizontal selection switch of the signal processing circuit 112 in sequence while scanning them. The signals of each pixel P transmitted through each vertical signal line VSL are subjected to signal processing by the signal processing circuit 112, and are output to the horizontal signal line 121 in sequence by selective scanning by the horizontal drive circuit 113.

The output circuit 114 is configured to perform signal processing on the input signal and output the signal. The output circuit 114 performs signal processing on pixel signals input sequentially from the signal processing circuit 112 via the horizontal signal line 121, and outputs the processed pixel signals. The output circuit 114 can perform, for example, buffering, black level adjustment, column variation correction, various types of digital signal processing, etc.

The control circuit 115 is configured to be able to control each part of the imaging device 1. The control circuit 115 receives a clock, data instructing the operating mode, and the like, provided from outside the semiconductor substrate 120, and can also output data such as internal information of the imaging device 1.

The control circuit 115 has, for example, a timing generator configured to generate various timing signals. Based on the various timing signals generated by the timing generator, the control circuit 115 controls the driving of peripheral circuits such as the vertical drive circuit 111, the signal processing circuit 112, and the horizontal drive circuit 113. The input/output terminals 116 exchange signals with the outside.

The vertical drive circuit 111, the signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, the output circuit 114, the control circuit 115, etc. may be provided on the semiconductor substrate 120 or on another substrate. The imaging device 1 may have a structure (a laminated structure) formed by stacking multiple substrates.

FIG. 2 is a diagram for explaining an example of the configuration of a pixel of the imaging device according to the first embodiment. The pixel P has a photoelectric conversion unit 11 (photoelectric conversion element) and a readout circuit 15. The photoelectric conversion unit 11 is configured to receive light and generate a signal. The readout circuit 15 is configured to be capable of outputting a signal based on the charge generated by photoelectric conversion.

The photoelectric conversion unit 11 is configured to be able to generate electric charges by photoelectric conversion. The photoelectric conversion unit 11 includes a photoelectric conversion film 21, an upper electrode 22, and a lower electrode 23. In the example shown in FIG. 2, the photoelectric conversion unit 11 has a photoelectric conversion film 21 and converts incident light into electric charges. The photoelectric conversion unit 11 performs photoelectric conversion to generate electric charges according to the amount of light received. The electric charges photoelectrically converted and accumulated in the photoelectric conversion unit 11 are transferred by the lower electrode 23 to the floating diffusion FD of the readout circuit 15.

The read circuit 15, for example, includes a floating diffusion FD, a transistor AMP, a transistor SEL, and a transistor RST. The transistors AMP, SEL, and RST are each MOS transistors (MOSFETs) having gate, source, and drain terminals.

In the example shown in FIG. 2, the transistors AMP, SEL, and RST are each composed of an NMOS transistor. The transistor of pixel P may also be composed of a PMOS transistor.

The floating diffusion FD is an accumulation section and is configured to be able to accumulate the transferred charge. The floating diffusion FD can accumulate the charge photoelectrically converted by the photoelectric conversion section 11. The floating diffusion FD can also be considered a retention section capable of retaining the transferred charge. The floating diffusion FD accumulates the transferred charge and converts it into a voltage according to the capacity of the floating diffusion FD.

The transistor AMP is configured to generate and output a signal based on the charge stored in the floating diffusion FD. As shown in FIG. 2, the gate of the transistor AMP is electrically connected to the floating diffusion FD, and the voltage converted by the floating diffusion FD is input to the gate.

The drain of the transistor AMP is connected to a power supply line to which a power supply voltage VDD is supplied, and the source of the transistor AMP is connected to a vertical signal line VSL via a transistor SEL. The transistor AMP is an amplifying transistor, and can generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output it to the vertical signal line VSL.

The transistor SEL is configured to be capable of controlling the output of a pixel signal. The transistor SEL is controlled by a signal SSEL, and is configured to be capable of outputting a signal from the transistor AMP to a vertical signal line VSL. The transistor SEL can control the output timing of the pixel signal. The transistor SEL may be provided between the power supply line to which the power supply voltage VDD is applied and the transistor AMP. Furthermore, the transistor SEL may be omitted as necessary.

The transistor RST is configured to be able to reset the voltage of the floating diffusion FD. In the example shown in FIG. 2, the transistor RST is electrically connected to a power supply line to which a power supply voltage VDD is applied, and is configured to reset the charge of the pixel P. The transistor RST is controlled by a signal SRST, and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. The transistor RST is a reset transistor.

The configuration of the readout circuit 15 may be changed as appropriate, for example, so that the conversion efficiency (gain) when converting charge to voltage can be changed. For example, the readout circuit 15 may have a switching transistor, a capacitive element, etc., used to set the conversion efficiency.

The vertical drive circuit 111 (see FIG. 1) supplies control signals to the gates of the transistors SEL, RST, etc. of each pixel P via the pixel drive line Lread described above, turning the transistors on (conducting state) or off (non-conducting state). The multiple pixel drive lines Lread of the imaging device 1 include wiring that transmits a signal SSEL that controls the transistor SEL, wiring that transmits a signal SRST that controls the transistor RST, etc.

Transistors SEL, RST, etc. are controlled to be turned on and off by a vertical drive circuit 111. The vertical drive circuit 111 controls the readout circuit 15 of each pixel P to output a pixel signal from each pixel P to a vertical signal line VSL. The vertical drive circuit 111 can control the reading out of the pixel signal of each pixel P to the vertical signal line VSL.

FIG. 3 is a diagram showing an example of a cross-sectional configuration of an imaging device according to a first embodiment. The imaging device 1 has, for example, a lens 90, a protective layer 80, a light receiving layer 10, a multilayer wiring layer 130, and a semiconductor substrate 120. As shown in FIG. 3, the incident direction of light from the subject is the Z-axis direction, the left-right direction on the paper perpendicular to the Z-axis direction is the X-axis direction, and the direction perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in FIG. 3.

The imaging device 1 has a configuration in which a lens 90, a protective layer 80, a light receiving layer 10, a multi-layer wiring layer 130, and a semiconductor substrate 120 are stacked in the Z-axis direction. From the side where light is incident, the lens 90, the protective layer 80, the light receiving layer 10, the multi-layer wiring layer 130, and the semiconductor substrate 120 are provided.

The lens 90 is a lens that collects light and guides light incident from above toward the light receiving layer 10. The lens 90 (lens section) is an optical component also known as an on-chip lens. The lens 90 is provided above the light receiving layer 10, for example, for each pixel P or for each set of pixels P. Light from a subject to be measured enters the lens 90 via an optical system such as an imaging lens. The photoelectric conversion section 11 of the pixel P photoelectrically converts the light incident through the lens 90.

The lens 90 is made of, for example, amorphous silicon (a-Si). In this case, it is possible to efficiently focus the incident infrared light onto the photoelectric conversion unit 11. The lens 90 may also be made of silicon nitride (SiN), a resin material, or the like. The lens 90 may also be formed of another material that has a higher refractive index than the protective layer 80.

The imaging device 1 may have a filter that selectively transmits light. The filter is configured to selectively transmit light of a specific wavelength range from among the incident light. The filter may be an RGB color filter, a complementary color filter, a filter that transmits infrared light, or the like, and is provided above the light receiving layer 10. For example, the filter may be provided between the lens 90 and the protective layer 80 or within the protective layer 80 for each pixel P or for each set of pixels P.

The protective layer 80 is a passivation layer (protective film) and is formed so as to cover the entire light blocking member 60 described below. The protective layer 80 is made of, for example, amorphous silicon (a-Si), silicon nitride (SiN), aluminum oxide (Al ₂ O ₃ ), a resin material, or the like. The protective layer 80 may be made of other insulating materials. The protective layer 80 can also be called a planarization layer (planarization film).

The light receiving layer 10 has a plurality of photoelectric conversion sections 11. The photoelectric conversion section 11 of each pixel P can absorb incident light and generate electric charges. As shown in the example of FIG. 3, the photoelectric conversion section 11 (photoelectric conversion element) of each pixel P includes a photoelectric conversion film 21, an upper electrode 22, and a lower electrode 23. The photoelectric conversion section 11 also has a buffer layer 25.

The photoelectric conversion film 21 is configured to be capable of generating electric charges through photoelectric conversion. The photoelectric conversion film 21 can perform photoelectric conversion of incident light and generate electric charges according to the amount of light received. The photoelectric conversion film 21 can also be called a photoelectric conversion layer. The photoelectric conversion film 21 (photoelectric conversion layer) has, for example, quantum dots, and is configured to receive infrared light and generate electric charges. The photoelectric conversion film 21 can also be called a quantum dot layer (QD layer).

In the imaging device 1, as an example, a photoelectric conversion film 21 formed using quantum dots is provided in each pixel P. For example, the photoelectric conversion film 21 may be formed including an aggregate of nanoparticles. Examples of nanoparticles include PbS, PbSe, PbTe, InP, InAs, InSb, CdS, CdSe, and CdTe.

The photoelectric conversion film 21 is configured to perform photoelectric conversion on light in wavelength ranges such as near infrared (NIR) and shortwave infrared (SWIR) to generate electric charges. The photoelectric conversion film 21 may also be configured to receive visible light and generate electric charges. The photoelectric conversion film 21 may be configured using inorganic materials or organic materials.

The photoelectric conversion film 21 may be made of an organic material. Alternatively, the photoelectric conversion film 21 may be made of an inorganic material. The photoelectric conversion film 21 may be made of, for example, an organic semiconductor film or an amorphous silicon film. The material of the photoelectric conversion film 21 may be selected according to, for example, the wavelength range of the incident light to be measured.

The upper electrode 22 is an electrode common to the photoelectric conversion film 21 of multiple pixels P, and is provided, for example, on one side of the photoelectric conversion film 21. The lower electrode 23 is provided on the other side of the photoelectric conversion film 21 for each pixel P or for each set of multiple pixels P. The upper electrode 22 and the lower electrode 23 can be provided so as to face each other.

The upper electrode 22 and the lower electrode 23 are arranged with the photoelectric conversion film 21 in between. In the example shown in FIG. 3, the lower electrode 23 is provided opposite the upper electrode 22, with a part of the buffer layer 25 and a part of the photoelectric conversion film 21 in between. The upper electrode 22 is an electrode on the upper side of the photoelectric conversion film 21, and the lower electrode 23 is an electrode on the lower side of the photoelectric conversion film 21.

The upper electrode 22 is an electrode common to multiple pixels P and can also be called a common electrode. The lower electrode 23 is an electrode used to read out the electric charges converted by the photoelectric conversion film 21 and can also be called a readout electrode. An insulating film 131 of the multilayer wiring layer 130 is provided around the lower electrode 23. The upper electrode 22 and the lower electrode 23 are electrically connected to, for example, a circuit provided on the semiconductor substrate 120 via different wiring, electrodes, etc.

The upper electrode 22 and the lower electrode 23 are each made of, for example, ITO (indium tin oxide), IZO (indium zinc oxide), or the like. The upper electrode 22 and the lower electrode 23 may be made of other tin oxide-based materials, zinc oxide-based materials, or other transparent conductive materials. The lower electrode 23 may be made of other metal materials that reflect light.

The buffer layer 25 is provided between the photoelectric conversion film 21 and the lower electrode 23. The buffer layer 25 is made of, for example, an oxide semiconductor, and is arranged to face the photoelectric conversion film 21. The buffer layer 25 is bonded to the photoelectric conversion film 21 and the lower electrode 23. The lower electrode 23 is electrically connected to the buffer layer 25. A portion of the buffer layer 25 is provided on the insulating film 131 of the multilayer wiring layer 130. The buffer layer 25 is a layer used for storing and transporting (transferring) charges photoelectrically converted by the photoelectric conversion film 21, and is also called a carrier transport layer (or charge transport layer).

The buffer layer 25 may be formed using an organic semiconductor material. The buffer layer 25 may also be configured using quantum dots (nanoparticles). The material of the buffer layer 25 may be selected depending on, for example, the material of the photoelectric conversion film 21, the material of the lower electrode 23, the carrier (signal charge), etc. A buffer layer may be provided between the photoelectric conversion film 21 and the upper electrode 22. The buffer layer may be omitted as necessary.

As shown in Fig. 3, the imaging device 1 has a protective film 85. The protective film 85 is provided on the upper electrode 22. The protective film 85 is a passivation film, and can be formed so as to cover the entire surface of the upper electrode 22. The protective film 85 can be made of, for example, aluminum oxide ( _{Al2O3 )} , silicon oxide ( _SiO2 ), or the like. The protective film 85 may be made of other insulating materials. The protective film 85 can also be said to be a sealing member (sealing portion) that covers the photoelectric conversion unit 11.

The multilayer wiring layer 130 includes, for example, a conductor film and an insulating film, and has a plurality of wirings and vias (VIAs), etc. The multilayer wiring layer 130 is provided by stacking on the semiconductor substrate 120. The multilayer wiring layer 130 has a configuration in which a plurality of wirings are stacked with insulating films between them. In the example shown in FIG. 3, the multilayer wiring layer 130 includes insulating films 131 and 132. The insulating films of the multilayer wiring layer 130 can also be called interlayer insulating films (interlayer insulating layers).

The wiring of the multi-layer wiring layer 130 is formed using, for example, a metal material such as aluminum (Al), copper (Cu), or tungsten (W). The wiring of the multi-layer wiring layer 130 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

The semiconductor substrate 120 is, for example, a Si (silicon) substrate. The semiconductor substrate 120 can also be referred to as a semiconductor layer. The semiconductor substrate 120 may be an SOI (silicon on insulator) substrate, a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, or the like, or may be formed using other semiconductor materials.

The semiconductor substrate 120 and the multi-layer wiring layer 130 are provided with, for example, the above-mentioned readout circuit 15 for each pixel P or for each set of pixels P. The above-mentioned vertical drive circuit 111, signal processing circuit 112, horizontal drive circuit 113, output circuit 114, control circuit 115, etc. may be provided on the semiconductor substrate 120 and the multi-layer wiring layer 130, or on a substrate other than the semiconductor substrate 120. The semiconductor substrate 120 and part or all of the multi-layer wiring layer 130 may be collectively referred to as the semiconductor substrate 120.

The pixel P of the imaging device 1 has a wiring 31 and an electrode 32. The wiring 31 and the electrode 32 are used to read out the electric charge converted by the photoelectric conversion unit 11. The wiring 31 is made of a metal material such as copper (Cu) or tungsten (W). An insulating film 131 of the multi-layer wiring layer 130 is provided around the wiring 31. In the example shown in FIG. 3, the insulating film 131 is formed so as to cover the lower electrode 23.

The wiring 31 is electrically connected to the lower electrode 23 in the insulating film 131, and is electrically connected to the electrode 32 in the insulating film 132. The electrode 32 is made of a metal material such as copper or aluminum. The insulating film 132 of the multilayer wiring layer 130 is provided around the electrode 32. In the example shown in FIG. 3, the insulating film 132 is formed so as to cover the electrode 32. The lower electrode 23 is electrically connected to the electrode 32 via the wiring 31 provided in the insulating film 131 and the insulating film 132.

In the imaging device 1, the lower electrode 23 of the photoelectric conversion unit 11 is electrically connected to the readout circuit 15 provided on the semiconductor substrate 120 by wiring 31, electrodes 32, etc. The electric charge photoelectrically converted and accumulated in the photoelectric conversion unit 11 is transferred to the floating diffusion FD of the readout circuit 15 via wiring 31, electrodes 32, etc.

The imaging device 1 is provided with a separation section 50, as in the example shown in FIG. 3. The separation section 50 is formed between a plurality of adjacent photoelectric conversion sections 11, and separates the photoelectric conversion sections 11. The separation section 50 is formed, for example, using a trench (groove section) provided at the boundary between a plurality of adjacent pixels P. The separation section 50 can also be referred to as a pixel separation wall (or a light guide wall).

The separation section 50 is provided, for example, so as to penetrate the upper electrode 22, the photoelectric conversion film 21, and the buffer layer 25. By providing the separation section 50, the charge photoelectrically converted in the photoelectric conversion section 11 of the pixel P is prevented from leaking to the surrounding pixels P. In addition, it is possible to prevent light from leaking to the surrounding pixels P.

As an example, an insulating film, such as an aluminum oxide film (Al ₂ O ₃ ), a silicon oxide film (SiO ₂ ), or the like, is provided in the trench of the separation unit 50. The separation unit 50 may also be formed using other insulating materials having a low refractive index. The separation unit 50 may be configured by stacking a plurality of films. A gap (cavity) may be provided in the trench of the separation unit 50. By providing a low refractive index material or the like in the trench of the separation unit 50, it is possible to effectively suppress light leakage to the surrounding pixels P.

FIG. 4 is a diagram for explaining an example of the planar configuration of the imaging device according to the first embodiment. In the imaging device 1, as shown in FIG. 4, a plurality of separation sections 50 may be formed so as to surround the photoelectric conversion section 11 of each pixel P in a planar view. As in the example shown in FIG. 4, a plurality of separation sections 50 are provided discretely around the photoelectric conversion section 11. This makes it possible to prevent the upper electrode 22, which serves as a common electrode for each pixel P, from being separated (divided). By providing the separation sections 50, it becomes possible to suppress light leaking to surrounding pixels.

The imaging device 1 is also provided with a light-shielding member 60, as in the example shown in FIG. 3. The imaging device 1 has a light-shielding member 60 with a plurality of openings 65. The openings 65 are openings (holes) through which light from the lens 90 enters. In the example shown in FIG. 3, it can be said that a light-shielding member 60 with one opening 65 is disposed above the photoelectric conversion unit 11 for each pixel P.

The light-shielding member 60 is a light-shielding portion (light-shielding film) made of a material that blocks light, and is provided above the upper electrode 22. In the example shown in FIG. 3, the light-shielding member 60 is provided in the protective layer 80 and is located above the upper electrode 22. It can also be said that the light-shielding member 60 is disposed by replacing a part of the protective layer 80. The protective layer 80 is formed so as to cover the light-shielding member 60, and is provided so as to fill the opening 65.

As an example, the opening 65 of the light blocking member 60 may have a quadrilateral (e.g., a square) shape in a plan view, as shown in FIG. 5. Also, for example, the opening 65 may have a circular shape in a plan view. Note that the shape of the opening 65 can be changed as appropriate, and may be a rectangle, an ellipse, or another shape.

In this embodiment, the light blocking member 60 is composed of a reflecting member 61 that reflects incident light and an absorbing member 62 that absorbs the incident light. The light blocking member 60 has a configuration in which the reflecting member 61 and the absorbing member 62 are stacked. The reflecting member 61 is located above the upper electrode 22 in the direction in which the light is incident. The absorbing member 62 is stacked above the reflecting member 61.

The reflective member 61 reflects light that passes through the opening 65 from the lens 90 and is reflected by the photoelectric conversion unit 11 and enters the reflective member 61. The reflective member 61 is made of a metal material such as aluminum (Al) or tantalum (Ta). The reflective member 61 reflects the incident light that passes through the opening 65 and is reflected by the photoelectric conversion unit 11 toward the photoelectric conversion unit 11. The reflective member 61 may be formed using other materials that have a low refractive index.

In this way, in each pixel P of the imaging device 1, a reflective member 61 having an opening 65 is provided on the upper electrode 22 of the photoelectric conversion section 11. Therefore, a portion of the light reflected by the lower electrode 23 is reflected by the reflective member 61 and can be made to enter (re-enter) the photoelectric conversion section 11. Light can be efficiently guided to the photoelectric conversion section 11, improving quantum efficiency (QE). It becomes possible to improve sensitivity to incident light.

The absorbing member 62 is made of a material that absorbs light, and absorbs the incident light. The absorbing member 62 is made of, for example, tungsten (W), a black filter, etc. The absorbing member 62 absorbs unnecessary light that is incident around the opening 65. The absorbing member 62 may be formed using other metal materials that absorb light, or may be made using other color filters.

If the imaging device 1 did not have an absorbing member 62, some of the light that passed through the lens 90 would be reflected by a pixel P, reflected again by the lens 90, etc., and would potentially enter a pixel P surrounding that pixel P. Unwanted light would leak into the photoelectric conversion unit 11 of the surrounding pixels P, causing color mixing. Noise caused by the reflected light would be mixed into the pixel signal, and defects caused by the reflected light would occur in the image. Such noise and defects in the image are also known as flare.

In this embodiment, an absorbing member 62 having an opening 65 is provided above the photoelectric conversion unit 11. This makes it possible to suppress the occurrence of unnecessary reflected light and to suppress the occurrence of color mixing. It is also possible to suppress the occurrence of flare and prevent a decrease in image quality.

As described above, in each pixel P of the imaging device 1, for example, a light-shielding member 60 is provided above the photoelectric conversion unit 11, and separation units 50 are provided on all four sides of the photoelectric conversion unit 11. The pixel P has a light confinement structure including the light-shielding member 60 and the separation units 50. The light-shielding member 60 is located above the photoelectric conversion unit 11, and can also be considered a lid.

By pixel P having a light confinement structure, as shown diagrammatically by the arrow in FIG. 6, the light reflected by the lower electrode 23 can be reflected by the reflecting member 61 or the separating portion 50, thereby lengthening the optical path length of the incident light. This makes it possible to increase the amount of light absorbed by the photoelectric conversion film 21 and improve the quantum efficiency.

In this manner, in this embodiment, the photoelectric conversion unit 11 of the pixel P can efficiently absorb the light incident from the lens 90 through the opening 65 and perform photoelectric conversion. This makes it possible to improve the quantum efficiency of the pixel P. Furthermore, in this embodiment, it is possible to suppress the occurrence of color mixing between pixels.

The insulating film 131 around the lower electrode 23 may be made of a material having a lower refractive index than the buffer layer 25. The insulating film 131 may be made of, for example, TEOS, a resin material containing fluorine, or a material containing a filler. The insulating film 131 may be formed of a material containing fluorine with a low refractive index, or may be made of a material containing a filler with a low refractive index. The insulating film 131 may also be made of other resin materials with low refractive index that have electrical insulation properties.

In the imaging device 1, by providing the insulating film 131 having a low refractive index, for example, light that has passed through the opening 65 and traveled toward the insulating film 131 can be reflected by the insulating film 131 toward the photoelectric conversion section 11. It is also possible for light that is incident on the outside of the lower electrode 23 to be re-incident on the photoelectric conversion film 21. This makes it possible to improve the light confinement performance and improve quantum efficiency.

FIG. 7 is a diagram for explaining an example of the configuration of an imaging device according to the first embodiment. If the opening 65 of the light-shielding member 60 is small, the amount of light incident on the photoelectric conversion unit 11 decreases due to vignetting, etc., and if the opening 65 is large, the desired light trapping performance tends not to be obtained. Therefore, as shown in FIG. 7, for example, the width W1 of the opening 65 may be in the range of 30% to 75% of the width W2 of the pixel P. Also, for example, the width W1 of the opening 65 may be in the range of 35% to 70% of the width W2 of the pixel P.

The area of the opening 65 in a direction perpendicular to the stacking direction (Z-axis direction in FIG. 7) of the lens 90, the light shielding member 60, the photoelectric conversion unit 11, etc. may be within a range of 4% to 56% of the area of the pixel P. Also, for example, the area of the opening 65 may be within a range of 10% to 50% of the area of the pixel P. By configuring the imaging device 1 in this manner, it is possible to improve the light confinement performance and improve the quantum efficiency.

FIG. 8 shows an example of the cross-sectional configuration in the area where the image height is high, i.e., the distance from the center of the pixel section 100 (pixel array) of the imaging device 1. For example, light from an optical lens is incident almost perpendicularly on the central part of the pixel section 100 of the imaging device 1. On the other hand, light is incident obliquely on the peripheral part located outside the central part, i.e., on the area away from the center of the pixel section 100, as shown by the example arrow in FIG. 8.

In the imaging device 1, the positions of the lens 90 and the opening 65 of the light blocking member 60 in each pixel P may be configured to differ depending on the distance from the center of the pixel unit 100, i.e., the image height. As shown in FIG. 8, the lens 90 of the pixel P is, for example, arranged offset toward the center of the pixel unit 100 with respect to the photoelectric conversion unit 11 of the pixel P. The opening 65 of the light blocking member 60 of the pixel P may also be arranged offset toward the center of the pixel unit 100 with respect to the photoelectric conversion unit 11 of the pixel P. In the example shown in FIG. 8, the lens 90 and opening 65 can be said to be shifted to the right on the page with respect to the photoelectric conversion unit 11 of the pixel P.

In a direction perpendicular to the stacking direction (Z-axis direction) of the lens 90 and the light-shielding member 60, the center position of the lens 90 is different from the center position of the opening 65. The center of the opening 65 of the light-shielding member 60 is closer to the center of the pixel unit 100 than the center of the photoelectric conversion unit 11 of that pixel P. In addition, the center of the lens 90 is closer to the center of the pixel unit 100 than the center of the opening 65 of that pixel P. In the central region of the pixel unit 100, the pixel P is configured, for example, as shown in FIG. 3 above.

In this way, in the imaging device 1, the positions of the lens 90 and the opening 65 are adjusted according to the image height, making it possible to perform appropriate pupil correction. This makes it possible to suppress a decrease in the amount of light incident on the photoelectric conversion unit 11 and to suppress a decrease in sensitivity to the incident light. Even when light is incident at an angle, it is possible to properly propagate the incident light to the photoelectric conversion unit 11.

FIG. 9 is a diagram showing an example of a cross-sectional configuration of an imaging device according to the first embodiment. As shown in FIG. 9, the imaging device 1 includes the above-mentioned semiconductor substrate 120. The semiconductor substrate 120 has a first surface 11S1 and a second surface 11S2 that face each other. The second surface 11S2 is the surface opposite to the first surface 11S1. The semiconductor substrate 120 is formed, for example, from a silicon substrate.

The semiconductor substrate 120 is provided with the readout circuit 15 described above with reference to FIG. 2. The lower electrode 23 of the photoelectric conversion unit 11 is electrically connected to the floating diffusion FD and the gate portion of the transistor AMP. The photoelectric conversion unit 11 is disposed above the semiconductor substrate 120. Here, the light incident surface of the semiconductor substrate 120 is referred to as the upper side, and the opposite side of the semiconductor substrate 120 is referred to as the lower side.

The lower electrode 23 of the photoelectric conversion section 11 is formed on the insulating film 131 of the multi-layer wiring layer 130. A buffer layer 25, a photoelectric conversion film 21, an upper electrode 22, and a light-shielding member 60 are formed on the lower electrode 23. A protective layer 80 is formed on the entire surface including the upper electrode 22 and the light-shielding member 60. A lens 90 is provided on the protective layer 80.

An element isolation region 75 and an oxide film 76 are formed on the first surface 11S1 side of the semiconductor substrate 120. In addition, the transistor RST, transistor AMP, transistor SEL, floating diffusion FD, etc. of the read circuit 15 are provided on the first surface 11S1 side of the semiconductor substrate 120.

Transistor RST has a gate portion 71, a channel formation region 71A, and source/drain regions 71B and 71C. The source/drain region 71C of transistor RST also serves as a floating diffusion FD. The other source/drain region 71B is electrically connected to a power supply line that supplies a power supply voltage VDD.

The lower electrode 23 of the photoelectric conversion unit 11 is electrically connected to one of the source/drain regions 71C (floating diffusion FD) of the transistor RST via wiring 31, electrode 32, and wiring 35.

Transistor AMP has a gate portion 72, a channel formation region 72A, and source/drain regions 72B, 72C. The gate portion 72 is connected to the lower electrode 23 and one of the source/drain regions 71C (floating diffusion FD) of the transistor RST via wiring 35. In addition, one of the source/drain regions 72B shares an area with the other of the source/drain regions 71B constituting the transistor RST, and is connected to a power supply line through which the power supply voltage VDD is supplied.

Transistor SEL has a gate portion 73, a channel formation region 73A, and source/drain regions 73B and 73C. One source/drain region 73B shares an area with the other source/drain region 72C constituting transistor AMP, and the other source/drain region 73C is connected to the vertical signal line VSL.

FIGS. 10A to 10G are diagrams for explaining an example of a method for manufacturing an imaging device according to the first embodiment. First, as shown in FIG. 10A, a photoelectric conversion film 21, an upper electrode 22, etc. are formed, and a protective film 85 is formed on the upper electrode 22 by ALD (Atomic Layer Deposition), sputtering, etc.

Next, as shown in FIG. 10B, the upper electrode 22, the photoelectric conversion film 21, the buffer layer 25, etc. are selectively removed by lithography and EB (Electron Beam), etc. Then, as shown in FIG. 10C, the isolation section 50 is embedded and formed in the selectively removed portion by, for example, ALD.

Next, as shown in FIG. 10D, a protective film 85 is formed to cover the isolation portion 50, and unnecessary portions of the protective film 85 are then removed by CMP (Chemical Mechanical Polishing). Then, as shown in FIG. 10E, a reflective member 61 (e.g., an aluminum film) and an absorbing member 62 (e.g., a tungsten film) are formed on the protective film 85.

Next, as shown in FIG. 10F, an opening 65 is formed in the light-shielding member 60 by lithography and dry etching. Then, as shown in FIG. 10G, a protective layer 80 is formed on the light-shielding member 60, and a CMP process is performed. After that, a lens 90 and the like are formed. By the manufacturing method described above, the imaging device 1 shown in FIG. 3 and the like can be manufactured. Note that the manufacturing method described above is merely one example, and other manufacturing methods may be adopted.

[Action and Effects]
The photodetection device of this embodiment includes a photoelectric conversion element (photoelectric conversion section 11) having a first electrode (upper electrode 22), a second electrode (lower electrode 23) arranged opposite the first electrode, and a photoelectric conversion film (photoelectric conversion film 21) arranged between the first electrode and the second electrode, and a light-shielding member (light-shielding member 60) arranged above the first electrode and having an opening (opening 65) through which light is incident.

In the photodetector (imaging device 1) according to this embodiment, a light-shielding member 60 having an opening 65 is provided above the upper electrode 22 of the photoelectric conversion unit 11. This allows light from the measurement target to be appropriately guided to the photoelectric conversion unit 11. It is possible to realize a photodetector with good detection performance.

Next, a modified example of the present disclosure will be described. In the following, components similar to those in the above embodiment will be given the same reference numerals, and descriptions will be omitted as appropriate.

2. Modifications
(2-1. Modification 1)
In the above-described embodiment, an example of the arrangement of the separator 50 has been described, but the arrangement of the separator 50 is not limited to the above-described example. Figures 11A to 11C are diagrams for explaining an example of the configuration of an imaging device according to the first modification of the present disclosure. Figures 11A to 11C show an example of the layout of the separator 50.

As in the example shown in FIG. 11A, FIG. 11B, or FIG. 11C, a plurality of separation sections 50 may be formed discretely so as to surround the photoelectric conversion section 11 of each pixel P. In the examples shown in FIG. 11A to FIG. 11C, a plurality of separation sections 50 are provided so as to surround the periphery of the photoelectric conversion section 11. The plurality of separation sections 50 are arranged apart from each other around the periphery of the photoelectric conversion section 11. In the case of this modified example, the same effect as in the above-described embodiment can be obtained.

(2-2. Modification 2)
12A to 12C are diagrams for explaining an example of the configuration of a light blocking member of an imaging device according to Modification 2. The shape of the opening 65 of the light blocking member 60 is not limited to the example shown in Fig. 5 and can be modified as appropriate. For example, as shown in Fig. 12A, the opening 65 of the light blocking member 60 may have a circular shape in a plan view.

The opening 65 of the light blocking member 60 may be polygonal, elliptical, or another shape. For example, the opening 65 may have a hexagonal shape as shown in FIG. 12B. Also, for example, the opening 65 may have an octagonal shape as shown in FIG. 12C.

(2-3. Modification 3)
Fig. 13 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 3. As in the example shown in Fig. 13, a plurality of films may be embedded in the trench of the isolation unit 50. In the example shown in Fig. 13, the isolation unit 50 has an insulating film 51a and an insulating film 51b provided within the insulating film 51a.

The insulating film 51b has, for example, a refractive index lower than that of the insulating film 51a. The insulating film 51b can be made of a material having a refractive index lower than that of the insulating film 51a (for example, an aluminum oxide (Al ₂ O ₃ ) film). The insulating film 51b is made of, for example, silicon oxide (SiO ₂ ), a resin material, or the like. The insulating film 51b may be made using an air gap (void).

In this modified example, the separation section 50 (light-guiding wall) having the insulating films 51a and 51b is provided, which makes it possible to efficiently re-enter light into the photoelectric conversion section 11. This improves the light confinement performance and makes it possible to increase quantum efficiency.

(2-4. Modification 4)
14 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 4. The separation unit 50 may be provided from below the light blocking member 60 to below the lower electrode 23. For example, the separation unit 50 may be formed so as to reach the insulating film 132 of the multilayer wiring layer 130. In the example shown in FIG. 14, the separation unit 50 extends in the Z-axis direction and is provided into the insulating film 132. The separation unit 50 is provided so as to penetrate the photoelectric conversion unit 11 and the insulating film 131.

The imaging device 1 according to this modified example can also have a light confinement structure in the region below the lower electrode 23. Therefore, as shown diagrammatically by the arrows in FIG. 14, light that passes through the lower electrode 23 and insulating film 131 without being reflected can be reflected toward the photoelectric conversion section 11 by the separator 50 in the insulating film 132 and the electrode 32. Light that travels below the lower electrode 23 can also be made to re-enter the photoelectric conversion film 21, making it possible to improve quantum efficiency. In addition, it is possible to suppress light leakage into surrounding pixels P and effectively reduce color mixing.

(2-5. Modification 5)
Fig. 15 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 5. The absorbing member 62 of the light blocking member 60 may be configured by laminating a plurality of films as shown typically in Fig. 15. The absorbing member 62 may be configured by a plurality of film layers having different refractive indices corresponding to the wavelength bands of the incident light.

The absorbing member 62 may be, for example, a multi-layer interference film including a silicon oxide film (SiO ₂ ) and a titanium oxide film (TiO ₂ ). The light blocking member 60 may have a moth-eye structure. The absorbing member 62 may have, for example, a structure in which fine irregularities are formed. In the case of this modified example, the same effects as those of the above-mentioned embodiment can be obtained.

(2-6. Modification 6)
Fig. 16 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification Example 6. The light blocking member 60 may be configured to have different opening widths in the reflecting member 61 and the absorbing member 62. As in the example shown in Fig. 16, the opening 65 (opening 65a) in the reflecting member 61 and the opening 65 (opening 65b) in the absorbing member 62 may have different sizes.

The opening 65b of the absorbing member 62 is configured to be larger than the width of the opening 65a of the reflecting member 61, for example. In this case, it is possible to suppress a decrease in quantum efficiency caused by manufacturing variations in the lens 90 (such as the thickness of the lens 90 and the position of the lens 90). In addition, by ensuring the area of the opening 65a of the reflecting member 61, it is possible to suppress a decrease in light confinement performance and a decrease in quantum efficiency.

The light blocking member 60 may have a trapezoidal shape, as in the example shown in FIG. 16. The light blocking member 60 has a taper (inclined portion) and can also be said to have a tapered shape. The light blocking member 60 may be formed in a stepped shape by a reflecting member 61 and an absorbing member 62 having different sizes.

(2-7. Modification 7)
17 and 18 are diagrams for explaining a configuration example of an imaging device according to Modification 7. The light blocking member 60 may be configured to have only one of a reflecting member 61 and an absorbing member 62. For example, as in the example shown in Fig. 17, only the reflecting member 61 may be disposed, and the absorbing member 62 may not be disposed. As in the example shown in Fig. 18, only the absorbing member 62 may be disposed, and the reflecting member 61 may not be disposed.

(2-8. Modification 8)
Fig. 19 is a diagram for explaining a configuration example of an imaging device according to Modification 8. As in the example shown in Fig. 19, the imaging device 1 does not need to have a light blocking member 60. In each pixel P of the imaging device 1, a separator 50 is provided around the photoelectric conversion unit 11. For example, as in the examples shown in Figs. 4, 11A to 11C, etc., a plurality of separators 50 are provided discretely so as to surround the photoelectric conversion unit 11 of each pixel P.

In the imaging device 1, light reflected by the lower electrode 23 or the insulating film 131, etc., can be reflected by the separation section 50 and re-entered into the photoelectric conversion section 11. This makes it possible to increase the amount of light absorbed by the photoelectric conversion film 21 and improve quantum efficiency. In addition, color mixing between pixels P can be suppressed.

20 to 22 are diagrams for explaining another example configuration of an imaging device according to Modification 8. The separation section 50 may be provided, for example, from the upper electrode 22 to below the lower electrode 23. As in the example shown in FIG. 20, the separation section 50 may be formed to reach the insulating film 132 of the multilayer wiring layer 130.

The trench of the separation unit 50 may be filled with a plurality of films. In the example shown in FIG. 21 or FIG. 22, the separation unit 50 has an insulating film 51a and an insulating film 51b provided within the insulating film 51a. The insulating film 51b may be made of a material having a refractive index lower than that of the insulating film 51a.

The light detection device according to this modified example includes a photoelectric conversion element (photoelectric conversion section 11) having a first electrode (upper electrode 22), a second electrode (lower electrode 23) arranged opposite the first electrode, and a photoelectric conversion film (photoelectric conversion film 21) arranged between the first electrode and the second electrode, and a separation section (separation section 50) arranged between adjacent photoelectric conversion elements.

In the light detection device (imaging device 1) according to this modified example, a separator 50 is provided between adjacent photoelectric conversion units 11. This allows light from the measurement target to be appropriately guided to the photoelectric conversion units 11. It is possible to realize a light detection device with good detection performance.

3. Second embodiment
Next, a second embodiment of the present disclosure will be described. In the following, components similar to those in the above-described embodiment will be denoted by the same reference numerals, and descriptions thereof will be omitted as appropriate.

FIG. 23 is a diagram showing an example of a cross-sectional configuration of an imaging device according to a second embodiment of the present disclosure. Also, FIGS. 24 and 25 are diagrams for explaining an example of a planar configuration of an imaging device. The photoelectric conversion unit 11 (photoelectric conversion element) of each pixel P includes a photoelectric conversion film 21, an upper electrode 22, and a lower electrode 23. The imaging device 1 may also have the buffer layer 25 and protective film 85 described above.

In this embodiment, the upper electrode 22 is provided on one side of the photoelectric conversion film 21 for each pixel P, as in the example shown in FIG. 23 etc. The lower electrode 23 is an electrode common to the photoelectric conversion films 21 of multiple pixels P, and is provided, for example, on the other side of the photoelectric conversion film 21. The upper electrode 22 and the lower electrode 23 can be provided so as to face each other.

The lower electrode 23 is provided for multiple pixels P, as in the examples shown in Figures 23 and 25. The imaging device 1 has a configuration in which multiple pixels P share the lower electrode 23. For example, in the imaging device 1, the lower electrode 23 may be provided for all pixels P, and all pixels P may share one lower electrode 23.

The imaging device 1 may have a configuration in which, for example, any number of pixels P arranged in the row direction (horizontal direction) and column direction (vertical direction) share a lower electrode 23. For example, a lower electrode 23 is arranged for each set of pixels P (for example, in 2×2 pixel units, 3×3 pixel units, etc.), and the multiple pixels P share one lower electrode 23.

The lower electrode 23 is made of a metal material such as titanium (Ti) or copper (Cu). The lower electrode 23 may be made of a conductive material such as aluminum (Al) or tantalum (Ta), or may be made of other metal materials that reflect light.

In the example shown in FIG. 23 etc., the lower electrode 23 is an electrode common to multiple pixels P, and can also be called a common electrode. The upper electrode 22 is an electrode used to read out the electric charges converted by the photoelectric conversion film 21, and can also be called a readout electrode. The upper electrode 22 and the lower electrode 23 are each electrically connected to, for example, a circuit provided on the semiconductor substrate 120 via different wiring, electrodes, etc.

The pixel P of the imaging device 1 has a wiring 36 and an electrode 32. The wiring 36 and the electrode 32 are used to read out the electric charge converted by the photoelectric conversion unit 11. The wiring 36 is electrically connected to the upper electrode 22, and is electrically connected to the electrode 32, for example, within the insulating film 132.

The wiring 36 is provided, for example, so as to penetrate the photoelectric conversion film 21 and the lower electrode 23, and electrically connects the upper electrode 22 and the electrode 32. In the example shown in FIG. 23, the wiring 36 is arranged so as to penetrate the photoelectric conversion film 21, the lower electrode 23, and the insulating film 131, and reach the electrode 32 in the insulating film 132.

The wiring 36 is made of a metal material such as tungsten (W) or copper (Cu). As an example, the wiring 36 is provided away from the opening 65 in the pixel P and is located on the end side of the photoelectric conversion section 11. The wiring 36 is formed in a pillar shape and can be said to be a pillar-shaped wiring. The upper electrode 22 is electrically connected to the electrode 32 via the wiring 36, which is a pillar-shaped wiring. An insulating film 37 is provided around the wiring 36.

The insulating film 37 is made of, for example, silicon oxide, and is provided on the side (side portion) of the wiring 36. The insulating film 37 is arranged, for example, so as to follow the side of the wiring 36. As in the example shown in FIG. 23, the insulating film 37 can be formed so as to cover the side (side wall) of the wiring 36.

The insulating film 37 may be made of an insulating material such as silicon oxynitride or aluminum oxide, or may be made of other materials. In the imaging device 1, the insulating film 37 is provided to suppress the generation of dark current around the wiring 36.

In the imaging device 1, the upper electrode 22 of the photoelectric conversion unit 11 is electrically connected to the readout circuit 15 provided on the semiconductor substrate 120 by wiring 36, electrodes 32, etc. The electric charge photoelectrically converted and accumulated in the photoelectric conversion unit 11 is transferred to the floating diffusion FD of the readout circuit 15 via wiring 36, electrodes 32, etc.

In the imaging device 1 according to this embodiment, as described above, the lower electrodes 23 are provided for a plurality of pixels P. Therefore, compared to a case where a separate lower electrode 23 is provided for each pixel P, it is possible to prevent light from the measurement target (subject) from leaking below the lower electrode 23. The lower electrode 23 can also cause light that has traveled to the end side of the photoelectric conversion unit 11 to be re-entered into the photoelectric conversion unit 11. It is also possible to prevent light from leaking into surrounding pixels P, thereby reducing color mixing.

In this embodiment, the light that passes through the opening 65 is reflected by the lower electrode 23 toward the photoelectric conversion unit 11, making it possible to efficiently guide the light to the photoelectric conversion unit 11. This makes it possible to improve the light confinement performance and improve the quantum efficiency (QE). It is also possible to improve the sensitivity to incident light.

Figures 26A to 26L are diagrams for explaining an example of a manufacturing method for an imaging device according to the second embodiment. First, as shown in Figure 26A, an electrode 32 and insulating films 132, 131, etc. are formed, and a lower electrode 23 made of copper (Cu) is formed on the insulating film 131. Then, as shown in Figure 26B, a photoelectric conversion film 21 is formed on the lower electrode 23.

Next, as shown in FIG. 26C, a portion of the photoelectric conversion film 21 is selectively removed by lithography and dry etching. Then, as shown in FIG. 26D, an isolation portion 50 (e.g., an aluminum oxide film) is formed, for example, by ALD (Atomic Layer Deposition).

Next, as shown in FIG. 26E, the photoelectric conversion film 21, the insulating film 131, and the insulating film 132 are selectively removed by lithography and dry etching. Then, as shown in FIG. 26F, an insulating film 37 (e.g., a silicon oxide film) is formed by ALD in the selectively removed portions. Furthermore, as shown in FIG. 26G, wiring 36 (e.g., a tungsten film) is embedded and formed.

Next, as shown in FIG. 26H, an upper electrode 22 (e.g., an ITO film) is formed on the photoelectric conversion film 21. Then, as shown in FIG. 26I, a silicon nitride film is formed as a protective layer 80 so as to cover the upper electrode 22, and a planarization process is performed on the silicon nitride film. Furthermore, as shown in FIG. 26J, a light-shielding member 60 including a reflective member 61 and an absorbing member 62 is formed on the protective film 85.

Next, as shown in FIG. 26K, a silicon nitride film is formed as a protective layer 80 so as to cover the light shielding member 60, and a planarization process is performed on the protective layer 80. Then, as shown in FIG. 26L, a lens 90 is formed on the protective layer 80. By the manufacturing method described above, the imaging device 1 shown in FIG. 23 etc. can be manufactured.

FIG. 27 is a diagram for explaining another example configuration of an imaging device according to the second embodiment. As in the example shown in FIG. 27, the separation section 50 may be provided between adjacent upper electrodes 22 and up to the lower electrode 23. The upper electrodes 22 of each pixel P may be provided so as to sandwich a part of the separation section 50.

Figures 28A to 28L are diagrams for explaining another example of a method for manufacturing an imaging device according to the second embodiment. First, as shown in Figure 28A, an electrode 32 and insulating films 132, 131, etc. are formed, and a lower electrode 23 is formed on the insulating film 131. Then, as shown in Figure 28B, a photoelectric conversion film 21 is formed on the lower electrode 23.

Next, as shown in FIG. 28C, a portion of each of the photoelectric conversion film 21, the insulating film 131, and the insulating film 132 is removed by lithography and dry etching. Then, as shown in FIG. 28D, an insulating film 37 is formed by, for example, ALD. Furthermore, as shown in FIG. 28E, wiring 36 is embedded and formed.

Next, as shown in FIG. 28F, an ITO film 24 is formed as the upper electrode 22 on the photoelectric conversion film 21. Then, as shown in FIG. 28G, a portion of each of the ITO film 24 and the photoelectric conversion film 21 is removed by lithography and dry etching. The upper electrode 22 of each pixel P is formed by selectively removing the ITO film 24.

Next, as shown in FIG. 28H, the separation section 50 is formed by, for example, ALD. Then, as shown in FIG. 28I, a protective layer 80 is formed so as to cover the upper electrode 22. Furthermore, as shown in FIG. 28J, a light-shielding member 60 is formed on the protective layer 80.

Next, as shown in FIG. 28K, a protective layer 80 is formed to cover the light blocking member 60, and a planarization process is performed on the protective layer 80. Then, as shown in FIG. 28L, a lens 90 is formed on the protective layer 80. By using the manufacturing method described above, the imaging device 1 shown in FIG. 27 etc. can be manufactured. Note that the manufacturing method described above is merely one example, and other manufacturing methods may be adopted.

[Action and Effects]
The photodetector according to this embodiment includes a photoelectric conversion element (photoelectric conversion unit 11) having a first electrode (upper electrode 22), a second electrode (lower electrode 23) provided so as to face the first electrode, and a photoelectric conversion film (photoelectric conversion film 21) provided between the first electrode and the second electrode, and a light shielding member (light shielding member 60) provided above the first electrode and having an opening (opening 65) through which light is incident. The second electrode is provided for a plurality of pixels each including a photoelectric conversion film.

In the photodetection device (imaging device 1) according to this embodiment, the lower electrode 23 is provided for a plurality of pixels P. This makes it possible to prevent light from leaking below the lower electrode 23. It is possible to realize a photodetection device with good detection performance.

Next, a modified example of the present disclosure will be described. In the following, components similar to those in the above embodiment will be given the same reference numerals, and descriptions will be omitted as appropriate.

4. Modifications
(4-1. Modification 9)
In the above-described embodiment, a configuration example of the imaging device 1 has been described, but the configuration of the imaging device 1 is not limited to the above-described example. For example, the arrangement of the wiring 36 is not limited to the above-described example, and can be set arbitrarily. Figures 29 and 30 are diagrams for explaining a configuration example of an imaging device according to a ninth modification of the present disclosure. Figures 29 and 30 show an example of the planar configuration of the imaging device 1.

In the imaging device 1, the wiring 36 of each of the multiple pixels P may be arranged adjacent to one another. For example, as shown in the example of Figures 29 and 30, the wiring 36 (columnar wiring) of four adjacent pixels P may be arranged adjacent to one another. By arranging (laying out) the wiring 36 of each pixel P symmetrically, it is expected that the light utilization efficiency will be improved.

(4-2. Modification 10)
Fig. 31 is a diagram for explaining a configuration example of an imaging device according to Modification 10. The imaging device 1 may have a lens 95 as in the example shown in Fig. 31. The lens 95 is provided, for example, between the lens 90 and the protective layer 80. The lens 95 (lens portion) is an optical member also called an inner lens.

Lens 95, for example, has a shape different from that of lens 90 and is located between lens 90 and protective layer 80. In the example shown in FIG. 31, lens 90 is a convex lens and lens 95 is a concave lens. Lens 95 is made of a material having a refractive index different from that of each of lens 90 and protective layer 80, for example.

If the refractive index of lens 90 is n1, the refractive index of protective layer 80 is n2, and the refractive index of lens 95 is n3, then lens 90, lens 95, and protective layer 80 can be formed to satisfy n1>n3>n2. By configuring imaging device 1 in this way, light can be efficiently focused onto photoelectric conversion unit 11. It is possible to improve quantum efficiency.

(4-3. Modification 11)
Fig. 32 is a diagram showing an example of a cross-sectional configuration of an imaging device according to Modification 11. Fig. 33 and Fig. 34 are diagrams for explaining an example of a planar configuration of an imaging device according to Modification 11. The imaging device 1 may have a configuration in which two or more photoelectric conversion units (photoelectric conversion elements) are stacked.

As an example, the imaging device 1 has a structure in which a photoelectric conversion unit 11 and a photoelectric conversion unit 211 are stacked as shown in FIG. 32. From the light incident side, a light receiving layer 210 having a plurality of photoelectric conversion units 211 and a light receiving layer 10 having a plurality of photoelectric conversion units 11 are provided.

The photoelectric conversion unit 11 includes, for example, the photoelectric conversion film 21, the upper electrode 22, and the lower electrode 23 described above. In addition, a separation unit 50, wiring 36, and an electrode 32 are provided for the photoelectric conversion unit 11. The photoelectric conversion unit 211 is provided so as to be stacked on the photoelectric conversion unit 11. The photoelectric conversion unit 211 may have the same configuration as the photoelectric conversion unit 11.

The photoelectric conversion unit 211 includes, for example, a photoelectric conversion film 221, an upper electrode 222, and a lower electrode 223. The photoelectric conversion film 221, the upper electrode 222, and the lower electrode 223 of the photoelectric conversion unit 211 correspond to the photoelectric conversion film 21, the upper electrode 22, and the lower electrode 23 of the photoelectric conversion unit 11, respectively.

In addition, a separator 250, wiring 236, and electrode 232 are provided for the photoelectric conversion unit 211. The separator 250, wiring 236, and electrode 232 may have the same configuration as the separator 50, wiring 36, and electrode 32. The separator 250 is formed between adjacent photoelectric conversion units 211, and separates the photoelectric conversion units 211 from each other.

The wiring 236 and the electrode 232 are used to read out the electric charge converted by the photoelectric conversion unit 211. The wiring 236 is electrically connected to the upper electrode 222, and is electrically connected to the electrode 232, for example, within the insulating film 132. The wiring 236 is formed in a pillar shape, and can be called a pillar wiring.

The wiring 236 is provided, for example, so as to penetrate the photoelectric conversion film 221, the lower electrode 223, and the photoelectric conversion unit 11, and electrically connects the upper electrode 222 and the electrode 232. In the example shown in FIG. 32, the wiring 236 is arranged so as to penetrate the photoelectric conversion film 221, the lower electrode 223, the photoelectric conversion unit 11, and the insulating film 131, and reach the electrode 232 in the insulating film 132.

The photoelectric conversion unit 11 and the photoelectric conversion unit 211 can be configured to perform photoelectric conversion on light in different wavelength ranges. The photoelectric conversion unit 11 and the photoelectric conversion unit 211 selectively receive light in a specific wavelength range and perform photoelectric conversion depending on, for example, the constituent material of the photoelectric conversion films 21, 221 and the particle size (diameter) of the quantum dots. In the example shown in FIG. 32, the photoelectric conversion unit 11 is located below the photoelectric conversion unit 211 and can perform photoelectric conversion on light passing through the photoelectric conversion unit 211 to generate electric charge.

The imaging device 1 can obtain a pixel signal based on the charge converted by the photoelectric conversion unit 11 and a pixel signal based on the charge converted by the photoelectric conversion unit 211. Each of the photoelectric conversion unit 11 and the photoelectric conversion unit 211 may be configured to receive infrared light and perform photoelectric conversion, or may be configured to receive visible light and perform photoelectric conversion.

FIG. 35 is a diagram for explaining another example configuration of an imaging device according to Modification 11. The wiring 236 may be provided so as to penetrate the upper electrode 22 of the photoelectric conversion section 11. In the example shown in FIG. 35, the wiring 236 is provided so as to penetrate the photoelectric conversion film 221, the lower electrode 223, the upper electrode 22, the photoelectric conversion film 21, the lower electrode 23, and the insulating film 131, and electrically connects the upper electrode 222 and the electrode 232.

(4-4. Modification 12)
36 to 38 are diagrams for explaining configuration examples of an imaging device according to Modification 12. The light blocking member 60 may be configured to have only one of a reflecting member 61 and an absorbing member 62. For example, as in the example shown in FIG. 36, only the reflecting member 61 may be disposed, and the absorbing member 62 may not be disposed. Also, as in the example shown in FIG. 37, only the absorbing member 62 may be disposed, and the reflecting member 61 may not be disposed. As in the example shown in FIG. 38, the imaging device 1 may be configured not to have a light blocking member 60.

5. Application Examples
(Application Example 1)
The above-described light detection device (imaging device 1) can be applied to various electronic devices, such as imaging systems such as digital still cameras and digital video cameras, mobile phones with imaging functions, or other devices with imaging functions.

FIG. 39 is a block diagram showing an example of the configuration of an electronic device.

As shown in FIG. 39, the electronic device 101 includes an optical system 102, a photodetector 103, and a DSP (Digital Signal Processor) 104. The DSP 104, display device 105, operation system 106, memory 108, recording device 109, and power supply system 110 are connected via a bus 107, and the electronic device 101 is capable of capturing still and moving images.

The optical system 102 is composed of one or more lenses, and guides image light (incident light) from the subject to the light detection device 103, forming an image on the light receiving surface (sensor section) of the light detection device 103.

The above-mentioned photodetection device (imaging device 1) can be used as the photodetection device 103. Electrons are accumulated in the photodetection device 103 for a certain period of time according to the image formed on the light receiving surface via the optical system 102. Then, a signal according to the electrons accumulated in the photodetection device 103 is supplied to the DSP 104.

The DSP 104 performs various signal processing on the signal from the light detection device 103 to obtain an image, and temporarily stores the image data in the memory 108. The image data stored in the memory 108 is recorded in the recording device 109 or supplied to the display device 105 to display the image. The operation system 106 also accepts various operations by the user and supplies operation signals to each block of the electronic device 101. The power supply system 110 supplies the power necessary to drive each block of the electronic device 101.

(Application Example 2)
Fig. 40A is a schematic diagram showing an example of the overall configuration of a light detection system 2000 including a light detection device (imaging device 1). Fig. 40B is a schematic diagram showing an example of the circuit configuration of the light detection system 2000. The light detection system 2000 includes a light emitting device 2001 as a light source unit that emits light L2, and a light detection device 2002 as a light receiving unit having a photoelectric conversion element.

The above-mentioned light detection device (imaging device 1) can be used as the light detection device 2002. The light detection system 2000 may further include a system control unit 2003, a light source driving unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

The light detection device 2002 can detect light L1 and light L2. Light L1 is external ambient light reflected by the subject 2100 (object to be measured) (see FIG. 40A). Light L2 is light emitted by the light emitting device 2001 that is reflected by the subject 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light.

Light L1 can be detected by a photoelectric conversion unit in the light detection device 2002, and light L2 can be detected by a photoelectric conversion unit in the light detection device 2002. Image information of the subject 2100 can be obtained from the light L1, and distance information between the subject 2100 and the light detection system 2000 can be obtained from the light L2.

The optical detection system 2000 can be mounted on, for example, an electronic device such as a smartphone or a mobile object such as a car. The light emitting device 2001 can be configured, for example, with a semiconductor laser, a surface emitting semiconductor laser, or a vertical cavity surface emitting laser (VCSEL).

The method of detection by the light detection device 2002 of the light L2 emitted from the light emitting device 2001 can be, for example, the iTOF method, but is not limited to this. In the iTOF method, the photoelectric conversion unit can measure the distance to the subject 2100, for example, by the time-of-flight (TOF).

As a method for detecting the light L2 emitted from the light emitting device 2001 by the light detecting device 2002, for example, a structured light method or a stereo vision method can be adopted. For example, in the structured light method, a predetermined pattern of light is projected onto the subject 2100, and the degree of distortion of the pattern is analyzed to measure the distance between the light detecting system 2000 and the subject 2100.

In addition, in the stereo vision method, for example, two or more cameras are used to acquire two or more images of the subject 2100 viewed from two or more different viewpoints, thereby making it possible to measure the distance between the light detection system 2000 and the subject. Note that the light emitting device 2001 and the light detection device 2002 can be synchronously controlled by the system control unit 2003.

＜6. Application Examples＞
(Example of application to moving objects)
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

FIG. 41 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology disclosed herein can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in FIG. 41, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (interface) 12053.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device for generating the drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force for the vehicle.

The body system control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, tail lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals from various switches transmitted from a portable device that replaces a key can be input to the body system control unit 12020. The body system control unit 12020 accepts the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the image capturing unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the image capturing unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects information inside the vehicle. To the in-vehicle information detection unit 12040, for example, a driver state detection unit 12041 that detects the state of the driver is connected. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's degree of fatigue or concentration based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

The microcomputer 12051 can calculate the control target values of the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating vehicle collisions, following based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

The microcomputer 12051 can also perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

The microcomputer 12051 can also output control commands to the body system control unit 12020 based on information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

The audio/image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information. In the example of FIG. 41, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

FIG. 42 shows an example of the installation position of the imaging unit 12031.

In FIG. 42, the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

Note that FIG. 42 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple imaging elements, or an imaging element having pixels for phase difference detection.

For example, the microcomputer 12051 can obtain the distance to each solid object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, and can extract as a preceding vehicle, in particular, the closest solid object on the path of the vehicle 12100 that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km/h or faster). Furthermore, the microcomputer 12051 can set the inter-vehicle distance that should be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on the driver's operation.

For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects, such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, based on the distance information obtained from the imaging units 12101 to 12104, and can use the data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, it can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the image captured by the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the image captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the image captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio/image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio/image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

Above, an example of a mobile object control system to which the technology according to the present disclosure can be applied has been described. Of the configurations described above, the technology according to the present disclosure can be applied to, for example, the imaging unit 12031. Specifically, for example, the imaging device 1 or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to obtain a high-definition captured image. It becomes possible to perform high-precision control using the captured image in the mobile object control system.

(Application example to endoscopic surgery system)
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

FIG. 43 is a diagram showing an example of the general configuration of an endoscopic surgery system to which the technology disclosed herein (the present technology) can be applied.

In FIG. 43, an operator (doctor) 11131 is shown using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a patient bed 11133. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

The endoscope 11100 is composed of a lens barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 at a predetermined length, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

The tip of the tube 11101 has an opening into which an objective lens is fitted. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the tube by a light guide extending inside the tube 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

An optical system and an image sensor are provided inside the camera head 11102, and the reflected light (observation light) from the object of observation is focused on the image sensor by the optical system. The image sensor converts the observation light photoelectrically to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.

The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and controls the overall operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), in order to display an image based on the image signal.

The display device 11202, under the control of the CCU 11201, displays an image based on the image signal that has been subjected to image processing by the CCU 11201.

The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode) and supplies irradiation light to the endoscope 11100 when photographing the surgical site, etc.

The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

The treatment tool control device 11205 controls the operation of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity in order to ensure a clear field of view for the endoscope 11100 and to ensure a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the object of observation with laser light from each of the RGB laser light sources in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The image sensor of the camera head 11102 may be controlled to acquire images in a time-division manner in synchronization with the timing of the change in the light intensity, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band of light is irradiated compared to the light irradiated during normal observation (i.e., white light), and a specific tissue such as blood vessels on the surface of the mucosa is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating excitation light. In fluorescence observation, excitation light is irradiated to body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated to the body tissue to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and/or excitation light corresponding to such special light observation.

FIG. 44 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in FIG. 43.

The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

The lens unit 11401 is an optical system provided at the connection with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

The driving unit 11403 is composed of an actuator, and moves the zoom lens and focus lens of the lens unit 11401 a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

The communication unit 11404 is configured with a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

The communication unit 11404 also receives control signals for controlling the operation of the camera head 11102 from the CCU 11201, and supplies them to the camera head control unit 11405. The control signals include information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value during imaging, and/or information specifying the magnification and focus of the captured image.

The above-mentioned frame rate, exposure value, magnification, focus, and other imaging conditions may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

The camera head control unit 11405 controls the operation of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.

The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

The communication unit 11411 also transmits to the camera head 11102 a control signal for controlling the operation of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, etc.

The image processing unit 11412 performs various image processing operations on the image signal, which is the RAW data transmitted from the camera head 11102.

The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100, and the display of the captured images obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

The control unit 11413 also causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific body parts, bleeding, mist generated when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

The transmission cable 11400 that connects the camera head 11102 and the CCU 11201 is an electrical signal cable that supports electrical signal communication, an optical fiber that supports optical communication, or a composite cable of these.

In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

Above, an example of an endoscopic surgery system to which the technology of the present disclosure can be applied has been described. Of the configurations described above, the technology of the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology of the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.

The present disclosure has been described above by giving embodiments, modifications, and examples of application and application, but the present technology is not limited to the above embodiments, and various modifications are possible. For example, the modifications described above have been described as modifications of the above embodiments, but the configurations of each modification can be combined as appropriate.

In the above embodiments, an imaging device has been described as an example, but the light detection device disclosed herein may be, for example, a device that receives incident light and converts the light into an electric charge. The output signal may be a signal of image information or a signal of distance measurement information. The light detection device (imaging device) may be applied to an image sensor, a distance measurement sensor, etc.

The optical detection device disclosed herein may also be applied as a distance measurement sensor capable of measuring distance using the Time Of Flight (TOF) method. The optical detection device (imaging device) may also be applied as a sensor capable of detecting events, for example, an event-driven sensor (called an Event Vision Sensor (EVS), Event Driven Sensor (EDS), Dynamic Vision Sensor (DVS), etc.).

The photodetector of one embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode, and a photoelectric conversion film provided between the first electrode and the second electrode, and a light-shielding member provided above the first electrode and having an opening through which light is incident. This makes it possible to realize a photodetector with good detection performance.

The photodetector of one embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode, and a photoelectric conversion film provided between the first electrode and the second electrode, and a separator provided between adjacent photoelectric conversion elements. This makes it possible to realize a photodetector with good detection performance.

The photodetector of one embodiment of the present disclosure includes a photoelectric conversion element having a first electrode, a second electrode disposed opposite the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The second electrode is provided for a plurality of pixels each including a photoelectric conversion film. This makes it possible to realize a photodetector with good detection performance.

In addition, the effects described in this specification are merely examples and are not limited to the description, and other effects may be obtained. In addition, the present disclosure may have the following configurations.
(1)
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
a light-shielding member provided above the first electrode and having an opening through which light is incident.
(2)
The light detection device according to (1), wherein the light blocking member is a reflective member that reflects incident light that has passed through the opening and is reflected by the photoelectric conversion element.
(3)
The light detection device according to (1) or (2), wherein the light blocking member is an absorbing member that absorbs incident light.
(4)
The light detection device according to any one of (1) to (3), wherein the light blocking member has a reflective member provided above the first electrode and an absorbing member stacked above the reflective member.
(5)
The light detection device according to (4), wherein a width of the opening in the absorbing member is larger than a width of the opening in the reflecting member.
(6)
The photodetector according to any one of (1) to (5), further comprising a separator provided between adjacent ones of the photoelectric conversion elements.
(7)
The light-detecting device according to (6), wherein the separator is provided so as to penetrate the first electrode and the photoelectric conversion film.
(8)
the isolation portion includes a first insulating film and a second insulating film provided within the first insulating film;
The photodetector according to any one of (6) to (7), wherein the refractive index of the second insulating film is lower than the refractive index of the first insulating film.
(9)
The photodetector according to any one of (6) to (8), wherein the separation portion is provided from below the light blocking member to below the second electrode.
(10)
The photodetector according to any one of (6) to (9), wherein a plurality of the separation portions are discretely provided around the photoelectric conversion element in a plan view.
(11)
A pixel including the photoelectric conversion element is provided,
The photodetector according to any one of (6) to (10), wherein the pixel has a light confinement structure including the light blocking member and the separation portion.
(12)
The photodetector according to any one of (1) to (11), wherein a width of the opening is within a range of 30% to 75% of a width of a pixel including the photoelectric conversion element.
(13)
The light detection device according to any one of (1) to (12), wherein an area of the opening is within a range of 4% to 56% of an area of a pixel including the photoelectric conversion element.
(14)
a lens provided above the light blocking member and into which light is incident;
The photodetector according to any one of (1) to (13), wherein the photoelectric conversion film photoelectrically converts light incident through the lens and the opening.
(15)
The light detection device according to (14), wherein a center position of the lens is different from a center position of the opening in a direction perpendicular to a stacking direction of the lens and the light blocking member.
(16)
A buffer layer is further provided between the photoelectric conversion film and the second electrode,
The photodetector according to any one of (1) to (15), wherein the second electrode is electrically connected to the buffer layer.
(17)
A third insulating film is provided around the second electrode.
The photodetector according to (16), wherein the refractive index of the third insulating film is lower than the refractive index of the buffer layer.
(18)
The photodetector according to any one of (1) to (17), wherein the photoelectric conversion film has quantum dots.
(19)
The photodetector according to any one of (1) to (18), wherein the second electrode is provided for a plurality of pixels each including the photoelectric conversion film.
(20)
The photodetector according to (19), wherein the first electrode is provided for each of the pixels.
(21)
The photodetector according to (19) or (20), further comprising a wiring that penetrates the second electrode and the photoelectric conversion film and is electrically connected to the first electrode.
(22)
The light detection device according to (21), further comprising an electrode provided below the second electrode and electrically connected to the wiring.
(23)
An optical system;
a light detection device that receives light transmitted through the optical system;
The light detection device includes:
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
a light blocking member provided above the first electrode and having an opening through which light is incident.
(24)
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
and a separator provided between adjacent ones of the photoelectric conversion elements.
(25)
The light-detecting device according to (24), wherein the separation portion is provided so as to penetrate the first electrode and the photoelectric conversion film.
(26)
the isolation portion includes a first insulating film and a second insulating film provided within the first insulating film;
The photodetector according to any one of (24) to (25), wherein the refractive index of the second insulating film is lower than the refractive index of the first insulating film.
(27)
The photodetector according to any one of (24) to (26), wherein a plurality of the separation portions are discretely provided around the photoelectric conversion element in a plan view.
(28)
A buffer layer is further provided between the photoelectric conversion film and the second electrode,
The photodetector according to any one of (24) to (27), wherein the second electrode is electrically connected to the buffer layer.
(29)
A third insulating film is provided around the second electrode.
The photodetector according to any one of the preceding claims, wherein the third insulating film has a refractive index lower than a refractive index of the buffer layer.
(30)
The photodetector according to any one of (24) to (29), wherein the photoelectric conversion film has quantum dots.
(31)
The photodetector according to any one of (24) to (30), wherein the second electrode is provided for a plurality of pixels each including the photoelectric conversion film.
(32)
The photodetector according to any one of (31) to (34), wherein the first electrode is provided for each of the pixels.
(33)
The photodetector according to any one of (31) to (32), further comprising a wiring that penetrates the second electrode and the photoelectric conversion film and is electrically connected to the first electrode.
(34)
The light detection device according to (33), further comprising an electrode provided below the second electrode and electrically connected to the wiring.
(35)
An optical system;
a light detection device that receives light transmitted through the optical system;
The light detection device includes:
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
and a separator provided between adjacent ones of the photoelectric conversion elements.
(36)
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
a light-shielding member provided above the first electrode and having an opening through which light is incident;
The second electrode is provided for a plurality of pixels each including the photoelectric conversion film.
(37)
The photodetector according to (36), wherein the first electrode is provided for each of the pixels.
(38)
The photodetector according to any one of (36) to (37), further comprising a separator provided between adjacent ones of the photoelectric conversion elements.
(39)
The light detection device according to (38), wherein the pixel has a light confinement structure including the light blocking member and the separation portion.
(40)
The photodetector according to any one of (36) to (39), wherein the photoelectric conversion film has quantum dots.
(41)
The photodetector according to any one of (36) to (40), wherein the second electrode is made of a metal material.
(42)
The photodetector according to any one of (36) to (41), further comprising a wiring that penetrates the second electrode and the photoelectric conversion film and is electrically connected to the first electrode.
(43)
The light detection device according to (42), further comprising an electrode provided below the second electrode and electrically connected to the wiring.
(44)
An optical system;
a light detection device that receives light transmitted through the optical system;
The light detection device includes:
a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
a light-shielding member provided above the first electrode and having an opening through which light is incident;
The second electrode is provided for a plurality of pixels each including the photoelectric conversion film.

This application claims priority based on Japanese Patent Application No. 2023-079920, filed on May 15, 2023, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

Those skilled in the art may conceive of various modifications, combinations, subcombinations, and variations depending on design requirements and other factors, and it is understood that these are within the scope of the appended claims and their equivalents.

Claims (31)

a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
a light-shielding member provided above the first electrode and having an opening through which light is incident. The light detection device according to claim 1 , wherein the light blocking member is a reflecting member that reflects incident light that has passed through the opening and is reflected by the photoelectric conversion element. The light detection device according to claim 1 , wherein the light blocking member is an absorptive member that absorbs incident light. The photodetector according to claim 1 , wherein the light blocking member includes a reflective member provided above the first electrode, and an absorbing member laminated above the reflective member. The light detection device according to claim 4 , wherein a width of the opening in the absorbing member is greater than a width of the opening in the reflecting member. The photodetector according to claim 1 , further comprising a separator provided between adjacent ones of the photoelectric conversion elements. The light-detecting device according to claim 6 , wherein the separator is provided so as to penetrate the first electrode and the photoelectric conversion film. the isolation portion includes a first insulating film and a second insulating film provided within the first insulating film;
The photodetector according to claim 6 , wherein the second insulating film has a refractive index lower than a refractive index of the first insulating film. The light detection device according to claim 6 , wherein the separation portion is provided from below the light blocking member to below the second electrode. The light detection device according to claim 6 , wherein a plurality of the separation portions are provided discretely around the photoelectric conversion element in a plan view. A pixel including the photoelectric conversion element is provided,
The photodetector according to claim 6 , wherein the pixel has a light confinement structure including the light blocking member and the separation portion. The photodetector according to claim 1 , wherein the width of the opening is within a range of 30% to 75% of the width of a pixel including the photoelectric conversion element. The photodetector according to claim 1 , wherein an area of the opening is within a range of 4% to 56% of an area of a pixel including the photoelectric conversion element. a lens provided above the light blocking member and into which light is incident;
The light detection device according to claim 1 , wherein the photoelectric conversion film photoelectrically converts light incident through the lens and the opening. The light detection device according to claim 14 , wherein a center position of the lens is different from a center position of the opening in a direction perpendicular to a stacking direction of the lens and the light blocking member. A buffer layer is further provided between the photoelectric conversion film and the second electrode,
The photodetector device according to claim 1 , wherein the second electrode is electrically connected to the buffer layer. A third insulating film is provided around the second electrode.
The photodetector according to claim 16 , wherein the third insulating film has a refractive index lower than a refractive index of the buffer layer. The photodetector according to claim 1 , wherein the photoelectric conversion film includes quantum dots. The photodetector according to claim 1 , wherein the second electrode is provided for a plurality of pixels each including the photoelectric conversion film. The photodetection device according to claim 19 , wherein the first electrode is provided for each of the pixels. The light detection device according to claim 19 , further comprising a wiring that penetrates the second electrode and the photoelectric conversion film and is electrically connected to the first electrode. The light detection device according to claim 21 , further comprising an electrode provided below the second electrode and electrically connected to the wiring. a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
and a separator provided between adjacent ones of the photoelectric conversion elements. The light-detecting device according to claim 23 , wherein the separator is provided so as to penetrate the first electrode and the photoelectric conversion film. the isolation portion includes a first insulating film and a second insulating film provided within the first insulating film;
The photodetector according to claim 23 , wherein the second insulating film has a refractive index lower than a refractive index of the first insulating film. The light detection device according to claim 23 , wherein a plurality of the separation portions are provided discretely around the photoelectric conversion element in a plan view. a photoelectric conversion element including a first electrode, a second electrode provided so as to face the first electrode, and a photoelectric conversion film provided between the first electrode and the second electrode;
The second electrode is provided for a plurality of pixels each including the photoelectric conversion film. The photodetection device according to claim 27 , wherein the first electrode is provided for each of the pixels. The light detection device according to claim 28 , wherein the second electrode is made of a metal material. The light detection device according to claim 28 , further comprising a wiring that penetrates the second electrode and the photoelectric conversion film and is electrically connected to the first electrode. The light detection device according to claim 30 , further comprising an electrode provided below the second electrode and electrically connected to the wiring.