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WO2023277197A1 - Lame de cuivre pour usinage par cintrage sur chant, composant pour appareil électronique/électrique, et barre omnibus - Google Patents

Lame de cuivre pour usinage par cintrage sur chant, composant pour appareil électronique/électrique, et barre omnibus Download PDF

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Publication number
WO2023277197A1
WO2023277197A1 PCT/JP2022/026572 JP2022026572W WO2023277197A1 WO 2023277197 A1 WO2023277197 A1 WO 2023277197A1 JP 2022026572 W JP2022026572 W JP 2022026572W WO 2023277197 A1 WO2023277197 A1 WO 2023277197A1
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Prior art keywords
copper strip
edgewise bending
less
edgewise
mass
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PCT/JP2022/026572
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English (en)
Japanese (ja)
Inventor
航世 福岡
優樹 伊藤
健一郎 川▲崎▼
一誠 牧
Original Assignee
三菱マテリアル株式会社
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Priority claimed from JP2022106849A external-priority patent/JP7243904B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Publication of WO2023277197A1 publication Critical patent/WO2023277197A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/02—Single bars, rods, wires, or strips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

Definitions

  • the present invention provides a copper strip for edgewise bending suitable as a material for parts for electronic and electrical equipment such as busbars formed by edgewise bending, and an electronic/electronic device manufactured using this copper strip for edgewise bending. It relates to electrical equipment parts and bus bars.
  • This application is based on Japanese Patent Application No. 2021-110693 filed in Japan on July 2, 2021, Japanese Patent Application No. 2022-060504 filed in Japan on March 31, 2022, and Japanese Patent Application No. 2022 on July 1, 2022.
  • a priority is claimed based on Japanese Patent Application No. 2022-106849 filed, the content of which is incorporated herein.
  • Patent Literature 1 discloses an insulated rectangular copper wire that is made of oxygen-free copper and has a 0.2% yield strength of 150 MPa or less.
  • the 0.2% proof stress is suppressed to 150 MPa or less, it is possible to suppress the deterioration of the withstand voltage characteristics in the bent portion when edgewise bending is performed. It was possible.
  • Patent Document 2 in order to maintain the surface insulating film, the corners formed at the four corners of the cross section are chamfered with a radius of curvature of 0.05 to 0.6 mm, and the arithmetic mean roughness Ra is 0.05 mm. 05 to 0.3 ⁇ m, the maximum height Rz is 0.5 to 2.5 ⁇ m, and the ratio of the root mean square roughness Rq to the maximum height Rz (Rq/Rz) is 0.06 to 1.1.
  • a rectangular insulated conductor material for a coil is disclosed.
  • the present invention has been made in view of the above-mentioned circumstances, and provides an edgewise bending copper strip capable of edgewise bending under severe conditions, and an electronic device manufactured using the edgewise bending copper strip. ⁇ The purpose is to provide parts for electrical equipment and bus bars.
  • a copper strip for edgewise bending is edgewise bent at a ratio R/W of bending radius R to width W of 5.0 or less.
  • the copper strip has a thickness t in the range of 1 mm or more and 10 mm or less, and the burr dimension a ( ⁇ m) on at least one end face extending in the longitudinal direction is equal to the average crystal grain size D at the center of the plate thickness. It is characterized by a ⁇ (100 ⁇ D/2) with respect to ( ⁇ m).
  • the plate thickness center portion is defined as a region from 25% to 75% of the total thickness from the surface in the plate thickness direction.
  • the burr dimension a ( ⁇ m) on at least one end face extending in the longitudinal direction is greater than the average crystal grain size D ( ⁇ m) at the center of the plate thickness. , a ⁇ (100 ⁇ D/2), and the ratio R/W between the bending radius R and the width W is 5.0 by setting the end face where the dimension a of the burr is limited as the outer side of the edgewise bending. Even when severe edgewise processing of 0 or less is applied, stress concentration on the end face is suppressed, stress spreads evenly over the bent end face, and cracking and breakage can be suppressed. In addition, when subjected to edgewise bending, the interior is less likely to wrinkle and a uniform shape can be obtained.
  • the end surface of the present invention is a surface extending in the longitudinal direction and parallel to the plate thickness direction.
  • the thickness t is in the range of 1 mm or more and 10 mm or less, it is possible to sufficiently realize a reduction in current density and diffusion of heat due to Joule heat generation.
  • the copper strip for edgewise bending it is preferable that at least one end face extending in the longitudinal direction is free of burrs, and that the dimension a ( ⁇ m) of the burrs is 0. .
  • the dimension a ( ⁇ m) of the burr is set to 0, and the end face without burrs is positioned outside the edgewise bending, so that the ratio R/W between the bending radius R and the width W is 5.0 or less. Even when processed, the occurrence of cracks and breakage can be reliably suppressed, and wrinkles are less likely to occur inside, and a uniform shape can be obtained.
  • the Cu content is preferably 99.90 mass % or more.
  • the Cu content is set to 99.90 mass % or more, the amount of impurities is small, and it becomes possible to secure conductivity.
  • the copper strip for edgewise bending preferably contains one or more selected from Mg, Ca, and Zr in a total amount of more than 10 ppm by mass and less than 100 ppm by mass.
  • Mg dissolves in the matrix of copper, resulting in a large reduction in electrical conductivity. It is possible to improve strength, heat resistance, and edgewise bending workability without reducing , it is possible to improve edgewise bending workability.
  • the electrical conductivity is 97.0%IACS or higher.
  • the electrical conductivity is set to 97.0% IACS or more, heat generation during energization can be suppressed, and it is particularly suitable for parts for electronic/electrical equipment and bus bars.
  • the ratio W/t between the width W and the thickness t is preferably 2 or more.
  • the ratio W/t of the width W to the thickness t is 2 or more, it is particularly suitable as a material for electronic/electrical equipment parts and bus bars.
  • the average crystal grain size at the central portion of the plate thickness is 50 ⁇ m or less.
  • the average crystal grain size at the central portion of the plate thickness is set to 50 ⁇ m or less, the bending workability is further improved.
  • it is possible to suppress the generation of burrs during shaping processing it is also possible to suppress cracks that occur starting from burrs during edgewise bending processing.
  • the Ag concentration is preferably in the range of 5 ppm by mass or more and 20 ppm by mass or less.
  • the added Ag segregates in the vicinity of the grain boundary, hinders the movement of atoms at the grain boundary, and makes it possible to refine the crystal grain size. Therefore, it is possible to obtain better edgewise bending workability.
  • the H concentration is 10 mass ppm or less
  • the O concentration is 500 mass ppm or less
  • the C concentration is 10 mass ppm or less
  • the S concentration is 10 mass ppm or less.
  • the H concentration, O concentration, C concentration, and S concentration are regulated as described above, it is possible to suppress the occurrence of defects and to suppress deterioration in workability and electrical conductivity.
  • the end surface is a slit member having a slit surface.
  • the end face is a slit surface formed by slitting, and the burr size a ( ⁇ m) on the slit surface is a ⁇ (100 -D/2), by making this slit surface the outside of the edgewise bending, severe edgewise processing with a ratio R/W of bending radius R and width W of 5.0 or less was performed. Even in this case, the stress concentration on the end face is suppressed, the stress spreads evenly over the bent end face, and the occurrence of cracks and breaks can be sufficiently suppressed.
  • the edge faces are free of burrs by pulling out the slit member.
  • the ratio of the bending radius R to the width W is Even when severe edgewise processing with R/W of 5.0 or less is applied, stress concentration on the end face is suppressed, stress spreads evenly over the bent end face, and cracking and breakage can be suppressed.
  • a component for an electronic/electrical device is characterized by being manufactured using the copper strip for edgewise bending described above. Since the electronic/electrical device parts having this configuration are manufactured using the copper strip for edgewise bending which has excellent bending workability as described above, the occurrence of cracks and the like is suppressed, and the quality is excellent. ing.
  • a bus bar according to an aspect of the present invention is characterized by being manufactured using the copper strip for edgewise bending described above. Since the bus bar of this configuration is manufactured using the copper strip for edgewise bending which is excellent in bending workability as described above, the occurrence of cracks and the like is suppressed and the quality is excellent.
  • a plating layer may be formed on the current-carrying portion.
  • the plating layer since the plating layer is formed on the current-carrying portion that is in contact with another member and is energized, oxidation and the like can be suppressed, and the contact resistance with the other member can be kept low.
  • the busbar according to the aspect of the present invention includes an edgewise bent portion and an insulating coating portion.
  • the dimension a ( ⁇ m) of the burr on the end face is a ⁇ (100 ⁇ D/2) with respect to the average crystal grain size D ( ⁇ m) at the center of the plate thickness, edgewise bending The occurrence of defects such as cracks in the portion is suppressed, and damage to the insulating coating portion can be suppressed.
  • a copper strip for edgewise bending capable of edgewise bending under severe conditions, an electronic/electric device part manufactured using the copper strip for edgewise bending, and a bus bar are provided. can be provided.
  • FIG. 1B is an explanatory view showing an example of a busbar manufactured using the copper strip for edgewise bending according to the present embodiment, and shows a cross-sectional view taken along line XX of FIG. 1A.
  • 1 is an enlarged explanatory view showing an example of a cross section of a copper strip for edgewise bending according to the present embodiment;
  • FIG. 1 is an enlarged explanatory view showing an example of a cross section of a copper strip for edgewise bending according to the present embodiment;
  • FIG. 1 is an enlarged explanatory view showing an example of a cross section of a copper strip for edgewise bending according to the present embodiment;
  • FIG. 1 is an enlarged explanatory view showing an example of a cross section of a copper strip for edgewise bending according to the present embodiment;
  • FIG. 1 is a flowchart of a method for manufacturing a copper strip for edgewise bending according to the present embodiment
  • FIG. It is explanatory drawing which shows the result of an Example, and shows a comparative example. It is explanatory drawing which shows the result of an Example, and shows a comparative example. It is explanatory drawing which shows the result of an Example, and shows an example of this invention. It is explanatory drawing which shows the result of an Example, and shows an example of this invention.
  • a copper strip for edgewise bending and a component for electronic/electrical equipment (bus bar), which is one embodiment of the present invention, will be described below.
  • the busbar 10 which is this embodiment is demonstrated.
  • the bus bar 10 of this embodiment is provided with an edgewise bent portion 13 .
  • the busbar 10 of the present embodiment includes a copper strip 20 for edgewise bending, a plating layer 15 formed on the surface of the copper strip 20 for edgewise bending, and an edgewise bending copper strip 20. and an insulating covering portion 17 covering the copper strip 20 for bending.
  • the busbar 10 of the present embodiment is manufactured by subjecting a copper strip 20 for edgewise bending, which will be described later, to edgewise bending.
  • the conditions for edgewise bending are that the ratio R/W between the bending radius R and the width W is 5.0 or less.
  • the ratio R/W between the bending radius R and the width W may be 0.05 or more.
  • the edgewise bending copper strip 20 of the present embodiment has a thickness t in the range of 1 mm or more and 10 mm or less. With respect to the average crystal grain size D ( ⁇ m) at the center of the plate thickness, a ⁇ (100-D/2).
  • the plate thickness central portion is defined as a region from 25% to 75% of the total thickness from the surface in the plate thickness direction.
  • the edgewise bending copper strip 20 is slit, and the end faces thereof are slit surfaces. Moreover, in the edgewise bending copper strip 20 of the present embodiment, it is preferable that the ratio W/t between the width W and the thickness t is 2 or more.
  • the Cu content is preferably 99.90 mass % or more.
  • the edgewise bending copper strip 20 of the present embodiment may contain one or more selected from Mg, Ca, and Zr in a total content of more than 10 ppm by mass and less than 100 ppm by mass.
  • the Ag concentration may be in the range of 5 ppm by mass or more and 20 ppm by mass or less.
  • the H concentration is 10 mass ppm or less
  • the O concentration is 500 mass ppm or less
  • the C concentration is 10 mass ppm or less
  • the S concentration is 10 mass ppm or less.
  • the electrical conductivity is 97.0% IACS or more.
  • the average crystal grain size at the central portion of the plate thickness is 50 ⁇ m or less.
  • a slope may be formed at the corner between the surface and the end face.
  • a curved surface may be formed at the corner between the front surface and the end surface.
  • the thickness t of the edgewise bending copper strip 20 is preferably 1.2 mm or more, more preferably 1.5 mm or more.
  • the upper limit of the thickness t of the edgewise bending copper strip 20 is preferably 9.0 mm or less, more preferably 8.0 mm or less.
  • width W width W
  • the width W of the edgewise bending copper strip 20 is preferably 10 mm or more, more preferably 15 mm or more, and more preferably 20 mm or more.
  • the width W of the edgewise bending copper strip 20 may be 60 mm or less.
  • the burr dimension a ( ⁇ m) on at least one end face extending in the longitudinal direction is 25 mm from the center of the plate thickness (from the surface in the plate thickness direction to the entire thickness). % to 75%), if a ⁇ (100 ⁇ D/2) with respect to the average crystal grain size D ( ⁇ m), the burr dimension a ( ⁇ m) is limited as described above.
  • the burr dimension a ( ⁇ m) is measured by the method specified in JIS B 0051. Further, when the average crystal grain size D at the thickness center is less than 200 ⁇ m, it is preferable to satisfy a ⁇ (100 ⁇ D/2). As will be described later, by performing chamfering, drawing, extrusion, forging, cutting, polishing, etc., it is possible to remove burrs on the end face generated during slitting, for example.
  • the burr dimension a is preferably 100 ⁇ m or less, more preferably 90 ⁇ m or less, more preferably 80 ⁇ m or less, and most preferably 0 ⁇ m (that is, no burrs). .
  • ratio W/t of width W and thickness t In the edgewise bending copper strip 20 of the present embodiment, when the ratio W/t of the width W to the thickness t is 2 or more, it is particularly suitable as a material for electronic/electrical device parts and bus bars. ing.
  • the lower limit of the ratio W/t between the width W and the thickness t is preferably 3 or more, and more preferably 4 or more.
  • the upper limit of the ratio W/t of the width W to the thickness t is not particularly limited, but is preferably 50 or less, more preferably 40 or less.
  • the Cu content is preferably 99.90 mass % or more.
  • the Cu content is more preferably 99.93 mass% or more, more preferably 99.95 mass% or more. is more preferable.
  • Mg is an element that has the function and effect of improving the strength without significantly lowering the electrical conductivity by forming a solid solution in the matrix of copper. Further, by dissolving Mg in the matrix phase, strength and heat resistance are improved. Furthermore, by adding Mg, uniformity of structure and improvement of work hardening ability are obtained, and workability of edgewise bending is improved. Therefore, Mg may be added in order to improve strength, heat resistance, edgewise bending workability, and the like. In addition, when Ca or Zr is added, copper and intermetallic compounds are generated in the matrix phase, and the structure is homogenized, the work hardening ability, and the crystal grain size are refined without significantly decreasing the electrical conductivity. Edgewise bending workability can be further improved. Therefore, Ca and Zr may be added in order to improve the edgewise bending workability.
  • the total content of one or more selected from Mg, Ca, and Zr is made more than 10 ppm by mass, it is possible to achieve the above effects.
  • the total content of one or more selected from Mg, Ca, and Zr is set to less than 100 ppm by mass, a decrease in conductivity can be suppressed. Therefore, in the present embodiment, when one or more selected from Mg, Ca and Zr is added, the total content of one or more selected from Mg, Ca and Zr is It is preferably more than 10 mass ppm and less than 100 mass ppm.
  • the lower limit of the total content of one or more selected from Mg, Ca, and Zr is set to 20 mass ppm or more. It is preferably 30 mass ppm or more, more preferably 40 mass ppm or more.
  • the upper limit of the total content of one or more selected from Mg, Ca, and Zr is more preferably less than 90 mass ppm, and less than 80 mass ppm. is more preferable, and less than 70 ppm by mass is even more preferable.
  • the Ag concentration to 5 mass ppm or more, it is possible to obtain the above-described effects.
  • the Ag content to 20 ppm by mass or less, it is possible to suppress a decrease in conductivity and an increase in manufacturing cost. Therefore, in the present embodiment, when Ag is contained, it is preferable to set the Ag concentration to 5 mass ppm or more and 20 mass ppm or less.
  • the lower limit of the Ag concentration is more preferably 6 mass ppm or more, more preferably 7 mass ppm or more, and even more preferably 8 mass ppm or more.
  • the upper limit of the Ag concentration is more preferably 18 massppm or less, more preferably 16 massppm or less, and even more preferably 14 massppm or less.
  • H hydrogen
  • O oxygen
  • H hydrogen
  • the H concentration is more preferably 4 ppm by mass or less, more preferably 2 ppm by mass or less.
  • O oxygen
  • the O concentration is more preferably 400 mass ppm or less, more preferably 200 mass ppm or less, even more preferably 100 mass ppm or less, further preferably 50 mass ppm or less, and most preferably 20 mass ppm or less. is.
  • (C) C (carbon) is used to coat the surface of the molten metal in melting and casting for the purpose of deoxidizing the molten metal, and is an element that may inevitably be mixed.
  • the C concentration increases as the amount of C involved during casting increases. The segregation of these C, composite carbides, and C solid solution deteriorates cold workability. Therefore, in the edgewise bending copper strip 20 of the present embodiment, it is preferable to set the C concentration to 10 mass ppm or less.
  • the C concentration is more preferably 5 mass ppm or less, more preferably 1 mass ppm or less.
  • S sulfur
  • S concentration is more preferably 5 mass ppm or less, more preferably 1 mass ppm or less.
  • unavoidable impurities include Al, As, B, Ba, Be, Bi, Cd, Cr, Sc, rare earth elements, V, Nb, Ta, Mo, Ni, W, Mn, Re, Ru, Sr, Ti, Os, P, Co, Rh, Ir, Pb, Pd, Pt, Au, Zn, Hf, Hg, Ga, In, Ge, Y, Tl, N, S, Sb, Se, Si, Sn, Te, Li, etc. are mentioned. These unavoidable impurities may be contained as long as they do not affect the properties. Here, since these inevitable impurities may lower the electrical conductivity, it is preferable to reduce the content of the inevitable impurities.
  • the edgewise bending copper strip 20 of the present embodiment if the electrical conductivity is sufficiently high, heat generation during energization can be suppressed, so that the copper strip 20 is particularly suitable for bus bars. For this reason, it is preferable that the edgewise bending copper strip 20 of the present embodiment have a conductivity of 97.0% IACS or more.
  • the electrical conductivity is more preferably 97.5% IACS or more, more preferably 98.0% IACS or more, further preferably 98.5% IACS or more, and 99.0% IACS or better is most preferred.
  • the average crystal grain size at center of plate thickness In the copper strip 20 for edgewise bending according to the present embodiment, it is excellent if the average crystal grain size in the central part of the plate thickness (region from 25% to 75% of the total thickness from the surface in the plate thickness direction) is fine. It is possible to obtain excellent bending workability. Therefore, in the edgewise bending copper strip 20 of the present embodiment, it is preferable to set the average crystal grain size at the central portion of the plate thickness to 50 ⁇ m or less.
  • the average crystal grain size in the central portion of the plate thickness is more preferably 40 ⁇ m or less, more preferably 30 ⁇ m or less. More preferably, it is 25 ⁇ m or less.
  • the lower limit of the average crystal grain size at the central portion of the plate thickness is not particularly limited, but is substantially 1 ⁇ m or more.
  • a copper raw material is melted to obtain molten copper. If necessary, one or more selected from Mg, Ca and Zr and Ag are added to adjust the composition. When one or two or more selected from Mg, Ca, and Zr, or Ag is added, a single element, a mother alloy, or the like can be used. Also, a raw material containing the above elements may be melted together with the copper raw material. Recycled and scrap materials may also be used.
  • the copper raw material is preferably so-called 4NCu with a Cu content of 99.99 mass% or more, or so-called 5NCu with a Cu content of 99.999 mass% or more.
  • atmosphere melting in order to reduce the hydrogen concentration, it is preferable to perform atmosphere melting in an inert gas atmosphere (for example, Ar gas) having a low vapor pressure of H 2 O and keep the holding time at the time of melting to a minimum. Then, the molten copper whose composition has been adjusted is poured into a mold to produce an ingot.
  • atmosphere melting in an inert gas atmosphere (for example, Ar gas) having a low vapor pressure of H 2 O and keep the holding time at the time of melting to a minimum.
  • an inert gas atmosphere for example, Ar gas
  • the obtained ingot is subjected to heat treatment for homogenization and solutionization.
  • Intermetallic compounds and the like may exist inside the ingot, which are generated by concentrating impurities by segregation during the solidification process. Therefore, in order to eliminate or reduce these segregations, intermetallic compounds, etc., the ingot is heated to 300° C. or higher and 1080° C. or lower, thereby uniformly diffusing the impurities in the ingot.
  • the homogenization/solution treatment step S02 is preferably performed in a non-oxidizing or reducing atmosphere.
  • the heating temperature is set in the range of 300° C. or higher and 1080° C. or lower.
  • hot rolling may be performed after the homogenization/solution treatment step S02 described above in order to improve the efficiency of rough rolling and homogenize the structure, which will be described later.
  • the hot working temperature is preferably in the range of 300°C or higher and 1080°C or lower.
  • Rough rolling step S03 Rough rolling is performed in order to process it into a predetermined shape.
  • the temperature conditions in this rough rolling step S03 are not particularly limited, but in order to suppress recrystallization or to improve dimensional accuracy, cold or warm rolling is performed within the range of -200 ° C. to 200 ° C. It is preferable to set it as, and especially normal temperature is preferable.
  • the total processing rate (area reduction rate) is preferably 50% or more, more preferably 60% or more, and even more preferably 70% or more.
  • the processing rate (area reduction rate) per pass is preferably 10% or more, more preferably 15% or more, and even more preferably 20% or more.
  • Intermediate heat treatment step S04 After the rough rolling step S03, a heat treatment is performed to obtain a recrystallized structure. Note that the rough rolling step S03 and the intermediate heat treatment step S04 may be repeated.
  • this intermediate heat treatment step S04 is substantially the final recrystallization heat treatment, the crystal grain size of the recrystallized structure obtained in this step is almost equal to the final crystal grain size. Therefore, in this intermediate heat treatment step S04, it is preferable to appropriately select the heat treatment conditions so that the average crystal grain size at the center of the plate thickness is 50 ⁇ m or less.
  • top and front rolling In order to process the copper material into a predetermined shape after the intermediate heat treatment step S04, top and front rolling may be performed.
  • the temperature condition in this pre-rolling step S05 is preferably in the range of -200 ° C. to 200 ° C., which is cold or warm working, in order to suppress recrystallization during rolling. is preferred.
  • the rolling reduction is appropriately selected so as to approximate the final shape, and is preferably within the range of 1% or more and 30% or less.
  • Mechanical surface treatment step S06 After the pre-processing step S05, a mechanical surface treatment is performed.
  • Mechanical surface treatment is a treatment that applies compressive stress to the vicinity of the surface, and has the effect of suppressing cracking that occurs during flatwise bending due to the compressive stress in the vicinity of the surface, thereby improving bending workability.
  • Mechanical surface treatments include shot peening, blasting, lapping, polishing, buffing, grinder polishing, sandpaper polishing, tension leveler treatment, light rolling with low rolling reduction per pass (rolling reduction per pass 1 to 10% and repeated three times or more), various commonly used methods can be used.
  • the copper material obtained by the mechanical surface treatment step S06 may be subjected to finishing heat treatment in order to remove the segregation of contained elements to grain boundaries and residual strain.
  • This heat treatment is preferably performed in a non-oxidizing atmosphere or a reducing atmosphere.
  • the heat treatment temperature is preferably in the range of 100° C. or higher and 500° C. or lower.
  • This heat treatment is preferably performed in a non-oxidizing atmosphere or a reducing atmosphere.
  • the method of heat treatment is not particularly limited, but short-time heat treatment in a continuous annealing furnace is preferable from the viewpoint of reducing manufacturing costs.
  • the above-described pre-rolling step S05, mechanical surface treatment step S06, and finishing heat treatment step S07 may be repeated.
  • metal plating Sn plating, Ni plating, Ag plating, etc.
  • the copper material that has undergone the finishing heat treatment step S07 or the finishing processing step S08 is subjected to shape imparting processing as necessary in order to be processed into a desired shape.
  • shape imparting processing as necessary in order to be processed into a desired shape.
  • Various commonly used methods such as slitting, pushback, punching, drawing, swaging, and conforming can be used for shaping.
  • various commonly used methods can be used, such as counter-cutting for separating materials by half-shearing and reverse-shearing, and roll-slitting for separating materials by half-shearing and pressing with rolls.
  • burr treatment is performed as necessary so that the dimension a ( ⁇ m) of the burr becomes a ⁇ (100-D/2).
  • Various commonly used methods such as sandpaper, abrasive sheet, rotary bar, abrasive disk, abrasive belt, blasting, chamfering, extrusion, forging, cutting, and polishing can be used for deburring.
  • the processing rate (area reduction rate) is preferably in the range of 1% or more and 30% or less.
  • edgewise bending copper strip 20 of the present embodiment is produced.
  • the burr dimension a ( ⁇ m) on at least one end face extending in the longitudinal direction is the average Since a ⁇ (100-D/2) with respect to the crystal grain size D ( ⁇ m), the end face where the dimension a ( ⁇ m) of this burr is limited is outside the edgewise bending.
  • the burr dimension a ( ⁇ m) on at least one end face extending in the longitudinal direction is the average Since a ⁇ (100-D/2) with respect to the crystal grain size D ( ⁇ m), the end face where the dimension a ( ⁇ m) of this burr is limited is outside the edgewise bending.
  • the thickness t is in the range of 1 mm or more and 10 mm or less, so that the current density can be reduced and heat diffusion due to Joule heating can be sufficiently realized. be able to.
  • the interior is less likely to wrinkle and a uniform shape can be obtained.
  • the burr when there is no burr on at least one end surface extending in the longitudinal direction and the burr dimension a ( ⁇ m) is 0, the burr is formed.
  • the dimension a ( ⁇ m) is set to 0, and the burr-free end face is the outside of the edgewise bending, so that the ratio R/W between the bending radius R and the width W is 5.0 or less, and severe edgewise processing is performed.
  • the edgewise bending copper strip 20 of the present embodiment when the ratio W/t of the width W to the thickness t is 2 or more, it is particularly suitable as a material for busbars.
  • the edgewise bending copper strip 20 of the present embodiment when the Cu content is 99.90 mass% or more, the amount of impurities is small, and it is possible to ensure electrical conductivity.
  • edgewise bending copper strip 20 of the present embodiment contains one or more selected from Mg, Ca, and Zr in a total of more than 10 ppm by mass and less than 100 ppm by mass, By dissolving Mg in the matrix, it is possible to improve strength, heat resistance, and edgewise bending workability without significantly reducing electrical conductivity.
  • Ca and Zr are intermetallic compounds with Cu. By generating, it is possible to refine the crystal grain size and improve the edgewise bending workability without significantly reducing the conductivity.
  • the edgewise bending copper strip 20 of the present embodiment when the Ag concentration is within the range of 5 ppm by mass or more and 20 ppm by mass or less, the added Ag segregates in the vicinity of the grain boundary, and atoms at the grain boundary movement is hindered, and the crystal grain size can be refined.
  • the H concentration is 10 mass ppm or less
  • the O concentration is 500 mass ppm or less
  • the C concentration is 10 mass ppm or less
  • the S concentration is 10 mass ppm or less
  • the electrical conductivity is 97.0% IACS or higher, the electrical conductivity is sufficiently excellent, and heat generation during energization can be suppressed. and is particularly suitable for busbars.
  • the copper strip 20 for edgewise bending when the average crystal grain size at the central portion of the sheet thickness is 50 ⁇ m or less, the bending workability is further excellent.
  • the bending workability is further excellent.
  • it is possible to suppress the generation of burrs during shaping processing it is also possible to suppress cracks that occur starting from burrs during edgewise bending processing.
  • the dimension a ( ⁇ m) of the burr on the slit surface is the thickness center part With respect to the average crystal grain size D ( ⁇ m), a ⁇ (100-D / 2), so by making such an end face (slit face) the outside of the edgewise bending, the bending radius Even when severe edgewise processing with a ratio R/W of R to width W of 5.0 or less is applied, stress concentration on the end face is suppressed, stress spreads evenly on the bent end face, and cracking and breakage are suppressed. be able to.
  • the electronic/electrical device component (bus bar 10) according to the present embodiment is manufactured using the edgewise bending copper strip 20 according to the present embodiment, the occurrence of cracks and the like is suppressed. and is of excellent quality.
  • the edgewise bending copper strip 20 is prevented from being oxidized or the like. and the contact resistance with other members can be kept low.
  • the insulation coating portion 17 may be made of a commonly used insulation coating material.
  • commonly used insulating coating materials include resins having excellent electrical insulating properties, such as polyamideimide, polyimide, polyesterimide, polyurethane, and polyester.
  • the copper raw material described above was charged into a high-purity graphite crucible and was melted by high frequency in an atmosphere furnace with an Ar gas atmosphere.
  • the obtained molten copper was poured into a heat insulating material (isowool) mold to produce an ingot having the chemical composition shown in Tables 1 and 2.
  • the size of the ingot was about 80 mm thick ⁇ about 500 mm wide.
  • the obtained ingot was heated at 900° C. for 1 hour in an Ar gas atmosphere, then subjected to surface grinding to remove the oxide film, and cut into a predetermined size. After that, the thickness was appropriately adjusted so as to obtain the final thickness, and cutting was performed. Each cut sample was subjected to rough rolling under the conditions shown in Tables 1 and 2. Then, an intermediate heat treatment was performed so that the crystal grain sizes shown in Tables 3 and 4 were obtained. Next, the upper front rolling process was performed under the conditions described in Tables 1 and 2. Next, a mechanical surface treatment process was performed under the conditions described in Tables 1 and 2. Next, a finishing heat treatment was performed under the condition of holding at 250° C. for 1 minute.
  • the finishing process was performed so that the thickness t shown in Tables 3 and 4 was obtained. Further, a shaping step and corner processing were performed so that the plate widths W shown in Tables 3 and 4 were obtained. Moreover, the length was set to 200 mm to 600 mm.
  • composition analysis Measurement samples were collected from the obtained ingots, and Mg, Ca, and Zr were measured by inductively coupled plasma atomic emission spectrometry, and other elements were measured by glow discharge mass spectrometry (GD-MS).
  • the analysis of H was performed by the thermal conductivity method, and the analysis of O, S and C was performed by the infrared absorption method.
  • the amount of Cu was measured using the copper electrogravimetric method (JIS H 1051). In addition, the measurement was performed at two points, the central portion and the end portion in the width direction of the sample, and the larger content was taken as the content of the sample.
  • test piece having a width of 10 mm and a length of 60 mm was taken from the copper strip for edgewise bending, and the electrical resistance was determined by the four-probe method. Also, the dimensions of the test piece were measured using a micrometer, and the volume of the test piece was calculated. Then, the electrical conductivity was calculated from the measured electrical resistance value and volume. The test piece was taken so that its longitudinal direction was parallel to the rolling direction of the copper strip for edgewise bending.
  • a sample of width 20 mm ⁇ length 20 mm was cut from the obtained copper strip for edgewise bending, and the average crystal grain size at the center of the plate thickness was measured by an SEM-EBSD (Electron Backscatter Diffraction Patterns) measuring device.
  • SEM-EBSD Electro Backscatter Diffraction Patterns
  • a surface perpendicular to the width direction of rolling, ie, the TD surface (transverse direction) was used as an observation surface, and mechanical polishing was performed using water-resistant abrasive paper and diamond abrasive grains. Then, final polishing was performed using a colloidal silica solution to obtain a sample for measurement.
  • an EBSD measurement device Quanta FEG 450 manufactured by FEI, OIM Data Collection manufactured by EDAX/TSL (currently AMETEK)
  • analysis software manufactured by EDAX/TSL (currently AMETEK) OIM Data Analysis ver.7.3 .1
  • the observation surface was measured by the EBSD method at an acceleration voltage of an electron beam of 15 kV, a measurement area of 10000 ⁇ m 2 or more, and a measurement interval of 0.25 ⁇ m.
  • the measurement results were analyzed with the data analysis software OIM to obtain the CI value for each measurement point.
  • the misorientation of each crystal grain was analyzed using the data analysis software OIM, except for the measurement points where the CI value was 0.1 or less.
  • a boundary between measurement points where the orientation difference between adjacent measurement points is 15° or more is defined as a large-angle grain boundary, and a boundary between measurement points where the orientation difference between adjacent measurement points is less than 15° is defined as a small-angle grain boundary. and At this time, the twin boundary was also a large-angle grain boundary.
  • the measurement range was adjusted so that each sample contained 100 or more crystal grains.
  • a grain boundary map was created using the large-angle grain boundaries from the results of the obtained orientation analysis.
  • the thickness center is a region from 25% to 75% of the total thickness from the surface in the thickness direction.
  • burr dimension a ( ⁇ m) defined in JIS B 0051 was measured by SEM observation. In addition, each dimension is the maximum value of 1 mm length (total 5 mm) measured at any 5 points. From the obtained burr dimension a and the average crystal grain size D at the center of the plate thickness, those that satisfy a ⁇ (100-D/2) are marked as "O", and those that do not satisfy a ⁇ (100-D/2) was set to "x".
  • Edgewise bending was performed so that the ratio R/W between the bending radius R and the plate width W shown in Tables 3 and 4 was obtained. Those with no wrinkles on the outer end face of edgewise bending are evaluated as "A” (excellent), and those with wrinkles on the outer end face of edgewise bending are evaluated as “B” (good). Those with small cracks on the outer end face were evaluated as “C” (fair), and those in which the outer end face of edgewise bending was broken and edgewise bending was not possible were evaluated as "D” (poor). did. The evaluation results A to C were judged to be "possible to bend edgewise even under severe conditions”.
  • the burr dimension a ( ⁇ m) on at least one side end surface extending in the longitudinal direction is greater than the average crystal grain size D ( ⁇ m) at the center of the sheet thickness.
  • edgewise bending copper strips that are capable of edgewise bending under severe conditions, electronic and electrical equipment parts, and bus bars manufactured using this edgewise bending copper strips.

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Abstract

L'invention concerne une lame de cuivre pour usinage par cintrage sur chant qui présente un rapport R/W de rayon de cintrage (R) et de largeur (W) inférieur ou égal à 5,0, et qui est destinée à un usinage par cintrage sur chant. Cette lame de cuivre pour usinage par cintrage sur chant est caractéristique en ce que son épaisseur (t) se trouve à l'intérieur d'une plage supérieure ou égale à 1mm et inférieure ou égale à 10mm, et la dimension (ａ)（μｍ） de bavures au niveau d'une face extrémité d'au moins un côté se prolongeant dans une direction longitudinale, est telle que ａ＜（１００－Ｄ／２） par rapport au diamètre (Ｄ)（μｍ） particulaire moyen de cristaux liquides d'une partie centre d'épaisseur.
PCT/JP2022/026572 2021-07-02 2022-07-04 Lame de cuivre pour usinage par cintrage sur chant, composant pour appareil électronique/électrique, et barre omnibus WO2023277197A1 (fr)

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JP2021110693 2021-07-02
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JP2022106849A JP7243904B2 (ja) 2021-07-02 2022-07-01 エッジワイズ曲げ加工用銅条、および、電子・電気機器用部品、バスバー
JP2022-106849 2022-07-01

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466404A (en) * 1977-11-07 1979-05-29 Hitachi Ltd Preparing field coil
WO2020122230A1 (fr) * 2018-12-13 2020-06-18 三菱マテリアル株式会社 Plaque de cuivre pur, élément pour appareil électronique/électrique, et élément pour dissipation de chaleur
WO2020122112A1 (fr) * 2018-12-13 2020-06-18 三菱マテリアル株式会社 Plaque de cuivre pur
WO2021060023A1 (fr) * 2019-09-27 2021-04-01 三菱マテリアル株式会社 Plaque de cuivre pur
WO2022085723A1 (fr) * 2020-10-23 2022-04-28 三菱マテリアル株式会社 Matériau de cuivre fendu, composant pour appareil électronique ou électrique, barre omnibus, et substrat de dissipation de chaleur
WO2022085718A1 (fr) * 2020-10-23 2022-04-28 三菱マテリアル株式会社 Matériau de cuivre fendu, composant pour appareil électronique ou électrique, barre omnibus, et substrat de dissipation de chaleur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466404A (en) * 1977-11-07 1979-05-29 Hitachi Ltd Preparing field coil
WO2020122230A1 (fr) * 2018-12-13 2020-06-18 三菱マテリアル株式会社 Plaque de cuivre pur, élément pour appareil électronique/électrique, et élément pour dissipation de chaleur
WO2020122112A1 (fr) * 2018-12-13 2020-06-18 三菱マテリアル株式会社 Plaque de cuivre pur
WO2021060023A1 (fr) * 2019-09-27 2021-04-01 三菱マテリアル株式会社 Plaque de cuivre pur
WO2022085723A1 (fr) * 2020-10-23 2022-04-28 三菱マテリアル株式会社 Matériau de cuivre fendu, composant pour appareil électronique ou électrique, barre omnibus, et substrat de dissipation de chaleur
WO2022085718A1 (fr) * 2020-10-23 2022-04-28 三菱マテリアル株式会社 Matériau de cuivre fendu, composant pour appareil électronique ou électrique, barre omnibus, et substrat de dissipation de chaleur

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