WO2023160809A1

WO2023160809A1 - Deposition apparatus, substrate processing system and method for processing a substrate

Info

Publication number: WO2023160809A1
Application number: PCT/EP2022/054861
Authority: WO
Inventors: Wolfgang Klein; Ralph Lindenberg; Klaus SCHÜHLER
Original assignee: Applied Materials, Inc.
Priority date: 2022-02-25
Filing date: 2022-02-25
Publication date: 2023-08-31
Also published as: KR20240154608A; CN118804994A

Abstract

44019242 29475P-WO 23 ABSTRACT A deposition apparatus (110) for processing a substrate supported on a substrate support is provided. The deposition apparatus includes a vacuum chamber (112) having a lid assembly (114), one or more pump ports arranged at a first side wall of the vacuum chamber, the one or more pump ports being asymmetrically arranged with respect to the substrate support and configured to connect one or more vacuum pumps to the vacuum chamber and a processing compartment (120) having a first lateral wall (122) and an upper wall (124), the first lateral wall (122) being adjacent to the first side wall of the vacuum chamber. The processing compartment (120) is surrounded by the vacuum chamber providing a pumping channel surrounding the processing compartment. The upper wall (124) is configured for allowing a gas flow to flow from the processing compartment to the vacuum chamber via the upper wall. The pumping channel includes a first cross-section having a first area (117) extending from the first lateral wall (122) to the first side wall of the vacuum chamber (112); and a second cross-section having a second area (118) extending from the upper wall (124) to the lid assembly (114). The second area (118) is substantially equal to or larger than the first area (117). (FIG. 1A)

Description

DEPOSITION APPARATUS, SUBSTRATE PROCESSING SYSTEM AND METHOD FOR PROCESSING A SUBSTRATE

FIELD OF INVENTION

[0001] Embodiments of the present disclosure relate to a substrate processing apparatus, such as a deposition apparatus, a substrate processing system and methods for processing a substrate. Particularly, embodiments relate to deposition apparatuses for horizontal material deposition.

BACKGROUND

[0002] A vacuum processing system is a system that includes at least a vacuum chamber with a processing area wherein a substrate can be positioned relative to the processing area for processing of the substrate. Several methods are known for the deposition of a material on a substrate. For example, a substrate may be coated by using a physical vapor deposition (PVD) process, such as a sputtering process or an evaporation process, a spraying process, etc., or a chemical vapor deposition (CVD) process. A substrate on which material is deposited, i.e. a substrate to be coated, is introduced into a vacuum chamber of a vacuum processing system and positioned relative to a processing area of the vacuum chamber of the vacuum processing system.

[0003] For example, a coating process can take place in the vacuum chamber. For a sputter deposition process, material is ejected from a target positioned in the vacuum chamber. The material is deposited onto the substrate. The material ejection from the target can be provided in the vacuum chamber by bombarding the target with ions generated in a plasma region. The target typically forms a sputter cathode with the application of an electric potential difference, such that in the presence of the resulting electric field, ions generated in the plasma region accelerate/move towards the electrically charged sputter cathode and impact on said sputter cathode such that atoms from the cathode are dislodged. The sputter cathode thus provides the material for the material deposition and thus forms a material source.

[0004] Coating processes, e.g. sputter deposition processes, involve the provision of processing gas into the vacuum chamber. Thus, vacuum conditions are negatively affected. Vacuum pumps are used to compensate the input of gases to maintain the vacuum conditions during deposition. The use of vacuum pumps, however, may lead to an unequal pressure distribution in the vacuum chamber.

[0005] In light of the above, it is beneficial to provide improved deposition apparatuses and systems.

SUMMARY

[0006] In light of the above, a deposition apparatus, a substrate processing system and a method for processing a substrate according to the independent claims are provided. Further features, details, aspects, implementation and embodiments are shown in the dependent claims, the description and the drawings.

[0007] According to embodiments, a deposition apparatus for processing a substrate supported on a substrate support is provided. The deposition apparatus includes a vacuum chamber having a lid assembly, one or more pump ports arranged at a first side wall of the vacuum chamber, the one or more pump ports being asymmetrically arranged with respect to the substrate support and configured to connect one or more vacuum pumps to the vacuum chamber, and a processing compartment having a first lateral wall and an upper wall, the first lateral wall being adjacent to the first side wall of the vacuum chamber. The processing compartment is surrounded by the vacuum chamber providing a pumping channel surrounding the processing compartment and the upper wall is configured for allowing a gas flow to flow from the processing compartment to the vacuum chamber via the upper wall. The pumping channel includes a first cross-section having a first area extending from the first lateral wall to the first side wall of the vacuum chamber and a second cross-section having a second area extending from the upper wall to the lid assembly. The second area is substantially equal to or larger than the first area.

[0008] According to embodiments, substrate processing system is provided. The substrate processing system includes a transfer chamber, one or more deposition apparatuses according to any of the embodiments described herein and coupled to the transfer chamber, and one or more load lock chambers coupled to the transfer chamber. [0009] According to embodiments, a method of processing a substrate is provided. The method includes providing a substrate to a processing compartment of a deposition apparatus according to any of the embodiments described herein, applying a vacuum to the deposition apparatus with one or more vacuum pumps, the vacuum pumps being asymmetrically arranged with respect to the substrate, and depositing a material onto the substrate.

[0010] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the present disclosure are also directed at methods for operating the described apparatus. It includes method aspects for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:

Fig. 1 A shows a top view of a deposition apparatus according to embodiments described herein;

Fig. IB shows a cross-sectional view of a deposition apparatus according to embodiments described herein;

Fig. 2A shows a side view of a deposition apparatus according to embodiments described herein;

Fig. 2B shows a cross-sectional view of a deposition apparatus according to embodiments described herein;

Fig. 2C shows a side view of a deposition apparatus according to embodiments described herein; Fig. 3 shows a processing system according to embodiments described herein; and

Fig. 4 shows a flow diagram of a method according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[0012] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0013] Within the following description of the drawings, the same reference numbers refer to the same or similar components. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one applies to a corresponding part or aspect in another embodiment as well.

[0014] Vacuum pumping, especially symmetric pumping, may lead to pressure gradients within a vacuum chamber that, in the end, are displayed on the substrate to be deposited with material, e.g. by non-uniform deposition of material onto the substrate. Accordingly, yield of the deposition process may be decreased. Further, high capacity vacuum pumps are used to provide the vacuum conditions for deposition which, in turn, results in high costs.

[0015] According to embodiments that can be combined with any other embodiment described herein, a deposition apparatus for processing a substrate supported on a substrate support is provided. The deposition apparatus includes a vacuum chamber having a lid assembly and one or more pump ports arranged at a first side wall of the vacuum chamber, the one or more pump ports being asymmetrically arranged with respect to the substrate support and configured to connect one or more vacuum pumps to the vacuum chamber. The deposition apparatus may be configured for horizontal material deposition. [0016] The term “asymmetrically” or “asymmetric” as used herein may be understood in that the one or more pump ports, i.e. one or more vacuum pumps, are arranged offset the substrate support and/or a substrate that may be provided inside the deposition apparatus. In other words, the one or more vacuum pumps are arranged in no specific relation to the substrate support and/or the substrate that may be provided inside the deposition apparatus. In contrast, a “symmetric” pump arrangement may be understood as one or more pump ports and/or one or more vacuum pumps being arranged in a specific relation to the substrate support and/or the substrate that may be provided inside the deposition apparatus, e.g. in a specific pattern above and/or below the substrate support and/or the substrate that may be provided inside the deposition apparatus.

[0017] According to embodiments that can be combined with any other embodiments described herein, one or more vacuum pumps may be connected to the one or more pump ports. Particularly, the deposition apparatus may include two pump ports having two vacuum pumps connected thereto. The one or more vacuum pumps may be configured to provide vacuum conditions to the vacuum chamber. Particularly, the one or more vacuum pumps may equalize a pressure of a processing gas that may be provided inside the vacuum chamber. The deposition apparatus may include a gas supply for supplying processing gas to the vacuum chamber, particularly to a processing compartment.

[0018] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus includes a processing compartment having a first lateral wall and an upper wall. The first lateral wall is adjacent to the first side wall of the vacuum chamber. The vacuum chamber may have a drive unit port configured to connect a drive unit for driving a deposition source. For example, the deposition source may include one or more cathodes for sputter deposition, i.e. sputter cathodes. Particularly, the deposition source may include two cathodes, more particularly four cathodes, even more particularly six cathodes for sputter deposition.

[0019] According to embodiments that can be combined with any other embodiments described herein, the processing compartment is surrounded by the vacuum chamber providing a pumping channel surrounding the processing compartment. The processing compartment may be configured to house the deposition source. For example, the deposition source may be arranged within the processing compartment. The deposition source, i.e. the two or more cathodes, may be rotatable within the processing compartment. Rotation of the deposition source may be provided by one or more drive units that may be connected via the drive unit port to the deposition source. Deposition of material from the deposition source to a substratemay occur in the processing compartment. Particularly, the substrate may be arranged vertically below the deposition source.

[0020] According to embodiments that can be combined with any other embodiments described herein, the upper wall is configured for allowing a gas flow to flow from the processing compartment to the vacuum chamber via the upper wall. For example, the upper wall may include a shield assembly positioned between the lid assembly and the processing compartment for allowing the gas flow to flow from the processing compartment to the vacuum chamber surrounding the processing compartment.

[0021] According to embodiments that can be combined with any other embodiments described herein, the pumping channel surrounding the processing compartment includes a first cross-section having a first area extending from the first lateral wall to the first side wall of the vacuum chamber and a second cross-section having a second area extending from the upper wall to the lid assembly. The second area is substantially equal or larger than the first area. Thus, the gas flow from the processing compartment to the vacuum chamber, i.e. towards the lid assembly, may be more uniform. Further, pressure conditions at the substrate provided at the processing compartment may be beneficial for material deposition. Particularly, the pressure at the substrate may be distributed more uniformly over a substrate surface, i.e. over a total area of the substrate.

[0022] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to the top view shown in Figs. 1A and IB, a deposition apparatus 110 is provided. The deposition apparatus includes a vacuum chamber 112 and a processing compartment 120 according to any of the embodiments described herein. The processing compartment may include a deposition source 250. As exemplarily shown in Fig. 1 A, the deposition source may include one or more cathodes. Additionally or alternatively, the deposition apparatus may include two cathodes, particularly four cathodes, more particularly six cathodes, even more particularly eight cathodes. Further, the deposition apparatus or the processing compartment may include a respective number of anodes, particularly arranged between the cathodes. Particularly, the one or more cathodes may be in a horizontal orientation. [0023] According to embodiments that can be combined with any other embodiments described herein, the vacuum chamber may include a first side wall and a second side wall opposite the first side wall. The first side wall may include the one or more pump ports 130 and one or more drive unit ports. The vacuum chamber may further include a third side wall and a fourth side wall, the third side wall and the fourth side wall being opposite to each other. The first, second, third and fourth side wall may substantially be arranged in the shape of a rectangle. Accordingly, the first side wall and the second side wall may be of similar dimensions and the third side wall and the fourth side wall may be of similar dimensions. The first side wall and the second side wall may have a length Wl. The third side wall and the fourth side wall may have a length LI. The length LI may exceed the length WL For example, the length Wl of the first side wall and the second side wall may be similar and the length LI of the third side wall and the fourth side wall may be similar. The deposition source may extend in a length direction along the length LI of the third side wall and/or the fourth side wall. The vacuum chamber may include a base wall. The base wall may include one or more pedestals. The base wall may be opposite to the lid assembly and may be parallel to the lid assembly.

[0024] According to embodiments that can be combined with any other embodiments described herein, the vacuum chamber has a lid assembly 114. The lid assembly 114 may be provided vertically on top of the vacuum chamber. The lid assembly may be detachable. The lid assembly 114 may include one or more outwardly directed ribs for providing stability. The one or more ribs may be arranged outside, i.e. on top of the lid assembly.

[0025] According to embodiments that can be combined with any other embodiments described herein, the vacuum chamber may include a processing compartment 120. The processing compartment includes a first lateral wall 122 and an upper wall 124. The first lateral wall may have a length W2. The length W2 may be shorter than the length Wl of the first side wall of the vacuum chamber. Further, the processing compartment may include a second lateral wall 126 and a bottom wall 128. The second lateral wall may have the length W2, particularly wherein the length W2 is shorter than the length Wl of the first side wall and/or the second side wall of the vacuum chamber. For example, a ratio of lengths LI to L2 may be substantially equal to a ratio of widths Wl to W2. The bottom wall may be configured to receive a substrate to deposit a material onto the substrate. For example, the vacuum chamber may include a substrate handling segment to provide a substrate to the bottom wall of the processing compartment. The substrate handling segment may include a substrate support. The substrate support may be movable to provide the substrate to the bottom wall of the processing compartment. Additionally, the processing compartment may include a third lateral wall and a fourth lateral wall. The third and fourth lateral walls may be parallel to the third and fourth side walls of the vacuum chamber.

[0026] According to embodiments that can be combined with any other embodiments described herein, the vacuum chamber may surround the processing compartment. The processing compartment may be at a center position with respect to the vacuum chamber in the paper plane of Fig. 1A. In other words, the third lateral wall and the fourth lateral wall of the processing compartment may substantially have the same distance to the third side wall and the fourth side wall of the vacuum chamber, respectively. Further, the first lateral wall and the second lateral wall of the processing compartment may substantially have the same distance to the first side wall and the second side wall of the vacuum chamber, respectively. It is to be understood that the respective distances may be constant along the respective lengths of the walls, i.e. along the lenghts LI and/or L2. The first lateral wall 122 of the processing compartment may be aligned with the first side wall of the vacuum chamber, i.e. the first lateral wall may be parallel to the first side wall. The first lateral wall may be adjacent to the first side wall. Additionally, the second lateral wall 126 of the processing compartment may be aligned with the second side wall of the vacuum chamber, i.e. the second lateral wall 126 may be parallel to the second side wall.

[0027] According to embodiments that can be combined with any other embodiments described herein, the pumping channel surrounding the processing compartment may include the area and/or volume provided by the distances between the first side wall and the first lateral wall 122, the second side wall and the second lateral wall 126, the third side wall and the third lateral wall and the fourth side wall and the fourth lateral wall, respectively. In other words, the first side wall, the second side wall, the third side wall and the fourth side wall of the vacuum chamber may provide a uniform ring or frame around the processing compartment.

[0028] According to embodiments that can be combined with any other embodiments described herein, the deposition source may extend in length from the first lateral wall 122 to the second lateral wall 126. The length of the deposition source may be parallel to the length LI of the third and fourth side walls of the vacuum chamber and/or the length L2 of the third and fourth lateral sides of the processing compartment. The length of the deposition source may correspond to a length of the processing compartment L2, such that the deposition source may fit inside the processing compartment.

[0029] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus may include one or more drive units. The one or more drive units may be connected to the deposition source for driving the deposition source. For example, the deposition source may include one or more cathodes, e.g. sputter cathodes. The one or more drive units may be connected via the one or more drive unit ports to the deposition source. The one or more drive units may span the first area. The deposition source may include an array of sputter sources. The deposition apparatus may include more than one drive units. For example, the deposition apparatus may include a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the processing compartment, e.g. to the first lateral wall of the processing compartment. The deposition apparatus further may include a substrate support within the substrate handling segment and an actuator coupled to the substrate support to vertically move the substrate support.

[0030] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus includes a first cross-section having a first area 117. The first crosssection, i.e. the first area 117, may extend from the first lateral wall 122 of the processing compartment to the first side wall of the vacuum chamber as depicted by the dotted lines in Fig. 1 A. Further, the first area 117 may extend along the length W2 of the processing compartment, i.e. along the length of the first lateral wall and/or the second lateral wall. For example, the first area 117 may be seen as an area in a horizontal plane of the deposition apparatus.

[0031] According to embodiments that can be combined with any other embodiments described herein and as exemplarily shown in Fig. IB, the deposition apparatus includes a second crosssection having a second area 118. The second area 118 is substantially equal to or larger than the first area 117. In other words, the first area 117 may have similar dimensions or smaller dimensions with respect to the second area 118. The second area may extend from the upper wall of the processing compartment to the lid assembly, i.e. to a top wall of the vacuum chamber and/or the lid assembly. The second area may extend along the length W2 of the processing compartment.

Thus, a uniform gas flow may be allowed between the second area and the first area.

[0032] According to embodiments that can be combined with any other embodiments described herein, a gas flow from inside the processing compartment, i.e. from the substrate, towards the lid assembly may be provided. The gas flow may exit the processing compartment at the upper wall 124 and enter the vacuum chamber. In the vacuum chamber (and outside the processing compartment), the gas flow may spread in any direction around the processing compartment. A suction of the gas flow may occur towards the one or more pump ports, i.e. towards the one or more vacuum pumps. According to embodiments, the one or more pump ports 130 may be arranged vertically below the drive unit port, i.e. at the substrate handling segment. The gas flow may be directed from the lid assembly towards the substrate handling segment, i.e. from a top of the vacuum chamber towards a bottom of the vacuum chamber. The substrate handling segment may have a fourth cross-section having a fourth area 119 being substantially equal to or larger than the second area 118. The fourth cross-section having the fourth area 119 may be provided between the bottom wall of the processing compartment and the base wall of the vacuum chamber. Accordingly, a volume for providing and/or enhancing a gas flow in the vacuum chamber and/or around the processing compartment may be provided. The fourth area 119 may be 1 ,5x larger than the second area 118, particularly 2x larger than the second area.

[0033] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus may include one or more vacuum pumps connected to the one or more pump ports. The one or more vacuum pumps may be selected from the group of turbo molecular pumps, cryo pumps and/or combinations thereof.

[0034] For material deposition, a process gas or process gases may be provided to the vacuum chamber, particularly to the processing compartment, for generating respective deposition conditions. Since, however, a vacuum is to be provided for deposition, an inflow of gases into the vacuum chamber or the processing compartment may be equalized by pumping gas out of the vacuum chamber or processing compartment to maintain a vacuum inside the chamber. It is beneficial to regulate the flow of gas within the vacuum chamber and/or the processing compartment, especially the flow of gas away from the substrate, to achieve beneficial pressure conditions at the substrate where deposition occurs to obtain a more uniform and high-quality deposition of material onto the substrate.

[0035] Accordingly, it is beneficial to provide a deposition apparatus where the second area of the second cross-section is equal to or larger than the first area of the first cross-section. Since the gas flow may exit the processing compartment at the upper wall, it is beneficial to enhance a gas flow around the processing chamber (and/or away from the lid assembly or the second area). Compared to the prior art, by increasing the area and/or a volume around the processing chamber, i.e. a free volume of the vacuum chamber, especially by providing a greater distance between the first side wall of the vacuum chamber and the first lateral wall of the processing chamber, the gas flow around the processing compartment away from the substrate can be enhanced. Further, by providing a substantially similar area at opposing sides of the processing compartment, i.e. between the first side wall and the first lateral wall as well as between the second side wall and the second lateral wall, the gas flow can further be enhanced and may be more uniform within the vacuum chamber. Thus, gas conductance in the vacuum chamber can be improved while providing an asymmetric pump arrangement. Further beneficially, a pressure gradient at the substrate is effectively prevented or avoided. As an example, when providing a processing gas with a flow rate of e.g. 150 sccm/cm² to 250 sccm/cm², e.g. argon, the pressure gradient at or over the substrate may be less than 2 %.

[0036] Further beneficially, pump capacity can effectively be used due to the increase in gas conductance. Accordingly, the provision of the vacuum inside the vacuum chamber is more effective, less energy-consuming and less cost-intensive.

[0037] According to embodiments that can be combined with any other embodiments described herein, a pump capacity at the first cross-sectional area, the second cross-sectional area, the third cross-sectional area and/or the fourth cross-sectional area is at least 0.25 times of an applied pump capacity. For example, the applied pump capacity may be 535001/sec and the pump capacity at the first, second, third and/or fourth area may be at least 13375 1/sec.

[0038] According to embodiments that can be combined with any other embodiments described herein, the processing compartment 120 may have the second lateral wall 126 opposite the first lateral wall 122 and a third cross-section having a third area 116 between the second lateral wall and the second side wall the vacuum chamber 112 opposite the first side wall of the vacuum chamber. The third area 116 may be substantially equal to or smaller than the second area 118. Particularly, the first area 117 and the third area 116 may be substantially equal. In other words, the first area and the third area may allow for a substantially similar gas flow therethrough. Accordingly, a gas flow between the first side wall and the first lateral wall and a gas flow between the second side wall and the second lateral wall may be substantially equal. Thus, a low gas pressure at the substrate in the processing compartment may be stabilized or enhanced. Furthermore, uniformity of the gas pressure at and/or over a top side of the substrate in the processing compartment may be increased.

[0039] According to embodiments that can be combined with any other embodiments described herein, a fifth cross-section having a fifth area between the third side wall and the third lateral wall may be provided and a sixth cross-section having a sixth area between the fourth side wall and the fourth lateral wall may be provided. The first area 117, the thrid area 116, the fifth area and the sixth area may provide the pumping channel surrounding the processing compartment. The first area 117, the third area 116, the fifth area and the sixth area may provide a ring or frame with a uniform cross-section around the processing compartment. Thus, a uniform conductance of gas may be provided around the processing compartment. Uniform conductance may further be enhanced by expanding the fourth area 119 below the processing compartment according to embodiments described herein.

[0040] Accordingly, an overall area surrounding the processing compartment that is constant may be provided. In other words, the vaccum chamber may provide a constant circumferential area around the processing compartment. For example, a distance of the side walls of the vacuum chamber to the lateral walls of the processing compartment may be constant for the circumferential area.

[0041] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to Fig. 2A, at the first side wall, a drive unit 260 may be arranged for providing power to the deposition source 250.

[0042] According to embodiments that can be combined with any other embodiments described herein, beneficially, the lid assembly 114 may provide the second area 118 or a lid volume for allowing the gas flow to exit the processing compartment and to spread in the vacuum chamber. The second area may bay adapted by providing enlarged first, second, third and fourth side walls of the vacuum chamber, i.e. by extending the side walls of the vacuum chamber in a vertical direction. Accordingly, the gas flow through the lid assembly may be enhanced.

[0043] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus may include a substrate handling segment 240. The substrate handling segment 240 may include or may house components for substrate handling, substrate alignment, substrate masking, substrate support, or the like. The substrate handling segment may have a first horizontal slit opening configured to load and unload substrates into the vacuum chamber 112.

[0044] According to embodiments that can be combined with any other embodiments described herein, the substrate handling segment 240 may include a substrate support 242. The substrate support 242 may include a substrate support body 244 and substrate support pins 246. Figs. 2A and 2B exemplarily show the substrate support 242 and an actuator 222 coupled to the substrate support 242, particularly to the substrate support body 244. The actuator 222 can be a linear actuator or drive configured to move the substrate support body 244 vertically. For example, Fig. 2B shows the substrate support body 244 in a first position below the upper ends of the substrate support pins 246. The actuator 222 may move the support body 244 to a second position, i.e. an upper position, wherein the substrate support body is positioned above the upper ends of the substrate support pins 246. In the second position, the substrate support body may provide the substrate to the bottom wall of the processing compartment.

[0045] Substrate supports can be used in a processing system, such as a vacuum deposition system, or a deposition apparatus 110 as exemplarily shown in FIGS. 1A, IB, 2A, 2B and 2C. A substrate support can be provided for holding substrates within the vacuum chamber of the deposition apparatus. As an example, one or more material layers can be deposited on the substrate while the substrate is supported by the substrate support. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, a substrate support can be a support table, e.g. a substrate support table, or a pedestal, e.g. a substrate support pedestal provided in the vacuum chamber of deposition apparatus. A support table may particularly be configured for horizontal substrate processing or essentially horizontal substrate processing. For example, the deposition apparatus, i.e. the vacuum chamber, including the substrate support may be provided in a cluster processing system.

[0046] According to embodiments that can be combined with any other embodiments described herein, the deposition apparatus may include one or more flow limiters 234. The one or more flow limiters 234 may be arranged in the substrate handling segment and/or between the processing compartment and the substrate handling segment for adjusting a flow of gas through the first area and/or the third area. Particularly, the one or more flow limiters may be provided at the first side wall and the second side wall of the vacuum chamber. Further, the flow limiters may be arranged at the third side wall and the fourth side wall of the vacuum chamber. The one or more flow limiters may be a (horizontally arranged) plate having openings (extending in a vertical direction) therethrough. The one or more flow limiters may include a shutter, particularly for dynamically adjusting the flow of gas. Accordingly, the gas pressure within the vacuum chamber and/or the processing compartment may be regulated. For example, depending on the process conditions, the gas flow around the processing compartment may be adapted. Advantageously, the gas flow through the first area and the third area may be equalized such that a uniform gas pressure may be provided at the substrate.

[0047] According to embodiments that can be combined with any other embodiments described herein, the upper wall of the processing compartment may include a shield assembly 252. The shield assembly 252 may be configured to delimit the processing compartment with respect to the vacuum chamber. The shield assembly may be provided between the lid assembly and the processing compartment. The shield assembly may include a first material shield 254 and a second material shield 256. The first material shield and the second material shield may be shifted with respect to each other in a vertical direction and/or a horizontal direction. Between the first material shield and the second material shield may be a space for allowing the gas flow to pass from the processing compartment to the vacuum chamber. In other words, the shield assembly may provide an opening at the upper wall of the processing compartment to allow for gas exchange between the processing compartment and the vacuum chamber.

[0048] According to embodiments that can be combined with any other embodiments described herein, the shield assembly may be configured to prevent (solid) material from exiting the processing compartment. Accordingly, the shield assembly may be configured to prevent contamination of the vacuum chamber while allowing a gas exchange to provide uniform gas conditions and/or reducing a pressure gradient over the substrate.

[0049] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to Fig. 2B, the first material shield and the second material shield may be U-shaped shields. The first material shield and/or the second material shield may be bent or curved. For example, the first material shield and the second material shield may be bent or curved in opposing directions. The first material shield may be positioned vertically above the second material shield.

[0050] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to Fig. 2C, the substrate handling segment 240 may include a cold trap 232. The cold trap may be configured to remove condensable gases or gas components from the vacuum chamber. For example, water vapor that may enter the vacuum chamber and/or the processing compartment may be removed. Accordingly, the cold trap may enhance vacuum conditions within the vacuum chamber and/or the processing compartment. Further, the cold trap may prevent contamination of the one or more vacuum pumps with condensable gases and/or gas components.

[0051] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to FIG. 3, a substrate processing system 300 is provided. The substrate processing system includes a transfer chamber, one or more deposition apparatuses according to any of the embodiments described herein and one or more load lock chambers coupled to the transfer chamber. The substrate processing system 300 can be a cluster system having the transfer chamber 380. The transfer chamber 380 can be a central transfer chamber. A robot 382 can at least be partially disposed within the transfer chamber 380. The robot 382 can have a robot arm 394. The robot 382 can transfer substrates between the chambers coupled to the transfer chamber 380. At least one load lock chamber 365 can be coupled to the transfer chamber 380. FIG. 3 shows two load lock chambers 365 coupled to the transfer chamber 380. One or more deposition apparatuses 110 can be coupled to the transfer chamber 380. The robot 382 can transfer the substrate between a load lock chamber and a deposition chamber and vice versa or between different deposition chambers attached to the transfer chamber 380. [0052] According to embodiments, the deposition apparatus 110 includes a vacuum chamber. Further, the transfer chamber 380 can be a vacuum transfer chamber. Accordingly, a substrate can be handled under vacuum from the load lock chamber to the transfer chamber, from the transfer chamber to a vacuum chamber of a deposition apparatus 110 and from a vacuum chamber of the first deposition apparatus to a vacuum chamber of a further deposition apparatus.

[0053] The apparatuses and systems described herein can be configured in order to move and process large area substrates that may in particular have a surface of 1 m² or above. The term “substrate” may particularly embrace substrates like glass substrates, for example, a glass plate. Further, a substrate may include wafers, slices of transparent crystal such as sapphire or the like. However, the term “substrate” may embrace other substrates that can be inflexible or flexible, like e.g. a foil or a web. The substrate may be formed by any material suitable for material deposition. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the substrate is configured for display manufacturing and may in particular be a large area substrate.

[0054] Embodiments described herein particularly relate to deposition of materials, e.g. for display manufacturing on large area substrates. According to some embodiments, large area substrates or supports supporting one or more substrates may have a size of at least 0.5 m² For instance, the deposition system may be adapted for processing large area substrates, such as substrates of GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.85 m x 3.05 _m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. According to yet further implementations, half sizes of the above-mentioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers may be processed and coated in deposition systems according to the present disclosure.

[0055] FIG. 3 schematically shows a substrate processing system 100 including one or more deposition apparatuses 110 according to the present disclosure. The one or more deposition apparatuses 110 are intended for the deposition of material on a substrate and include a vacuum chamber and a deposition source such as a sputter source according to embodiments of the present disclosure. An array of deposition sources configured to deposit material on the substrate at a processing area in a horizontal orientation can be provided. The substrate processing system 300 further includes a transfer chamber 380, particularly a vacuum transfer chamber coupled to the one or more deposition apparatuses.

[0056] FIG. 3 further shows load lock chambers 365. The vacuum transfer chamber 380 may be coupled to the one or more deposition apparatuses 110. The vacuum transfer chamber can move substrates to the one or more vacuum chambers through openings, particularly horizontal slit openings.

[0057] In the operating conditions of a substrate processing system 300, a vacuum condition V may be maintained inside the substrate processing system 300 with the exception of load lock chambers 365, wherein, within the load lock chambers, a change from vacuum conditions V to atmospheric conditions or non-vacuum conditions A and vice versa is possible in order to insert and/or remove the substrate before or after processing without affecting the vacuum V in other parts of the substrate processing system 300 and in particular in the vacuum chambers, in the vacuum transfer chamber 380 and/or in the support chambers of the substrate processing system 300.

[0058] For transfer between the transfer chamber 380 and the adjacent vacuum chambers, for example, vacuum chambers of a load lock chamber 365 or vacuum chambers of a deposition apparatus 110, slit openings, particularly horizontal slit openings can be provided in the transfer chamber and the adjacent vacuum chambers. As exemplarily shown in FIG. 3, maintenance area 375 may be provided on one side of the deposition apparatus 110. The maintenance area may be on a side of the deposition apparatus opposite the slit opening facing the transfer chamber 380. Accordingly, the maintenance area 375 can be provided radially outward from the central transfer chamber. Transport path 390, for example, rails, guiding rails, guiding paths, can be provided from a first position at a deposition apparatus 110 to the second position at the maintenance area 375. One or more components of the deposition apparatus 110 can be moved along the transport path 390 between the deposition apparatus 110 and the maintenance area 375. As indicated by the dotted circle 362, the substrate processing system 300 can have a footprint for manufacturing within the circle. Further, as indicated by the dotted circle 364, the surrounding area for maintenance can be provided between the dotted circle 362 and the dotted circle 364. [0059] According to embodiments that can be combined with any other embodiments described herein and with exemplary reference to Fig. 4, a method for processing a substrate supported on a substrate support is provided. The method includes providing (indicated by box 402 in Fig. 4) a substrate to a processing compartment of a deposition apparatus according to any of the embodiments described herein. Further, the method includes applying (indicated by box 404 in Fig. 4) a vacuum to the deposition apparatus with one or more vacuum pumps, the vacuum pumps being asymmetrically arranged with respect to the substrate and depositing (indicated by box 406 in Fig. 4) a material onto the substrate.

[0060] According to embodiments that can be combined with any other embodiments described herein, the material may be a metallic material. For example, the material may be copper, aluminum, titanium, molybdenum, and tungsten and/or combinations thereof. Further, oxides, nitrides or oxynitrides of the above-mentioned materials may be provided, e.g. by reactive sputtering.

[0061] According to embodiments that can be combined with any other embodiments described herein, a mean pressure in the process compartment may be between 0.01 mbar and 0.08 mbar,. For example, a processing gas, e.g. an inert gas such as argon, may be provided to the vacuum chamber and/or the processing compartment with a flow rate of 150 sccm/cm² or more for material deposition. In the deposition apparatus according to any of the embodiments herein, a pressure gradient of less than 1% may be reached at and/or over the substrate.

[0062] In light of the above, one or more of the following advantages can be provided by embodiments of the present disclosure. A deposition apparatus with improved pressure conditions during material deposition, e.g. by the use of rotatable sputter cathodes sputtering down on a substrate, can be provided. Particularly, pressure conditions can be dynamically adapted and material deposition can be provided more uniformly to the substrate. Accordingly, a more efficient deposition process can be provided, yielding a high-quality deposition of substrates.

[0063] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A deposition apparatus (110) for processing a substrate supported on a substrate support, the deposition apparatus comprising: a vacuum chamber (112) having a lid assembly (114); one or more pump ports (130) arranged at a first side wall of the vacuum chamber, the one or more pump ports being asymmetrically arranged with respect to the substrate support and configured to connect one or more vacuum pumps to the vacuum chamber; a processing compartment (120) having a first lateral wall (122) and an upper wall (124), the first lateral wall (122) being adjacent to the first side wall of the vacuum chamber; wherein the processing compartment (120) is surrounded by the vacuum chamber providing a pumping channel surrounding the processing compartment; and wherein the upper wall (124) is configured for allowing a gas flow to flow from the processing compartment to the vacuum chamber via the upper wall; the pumping channel having: a first cross-section having a first area (117) extending from the first lateral wall (122) to the first side wall of the vacuum chamber (112); and a second cross-section having a second area (118) extending from the upper wall (124) to the lid assembly (114), wherein the second area (118) is substantially equal to or larger than the first area (H7).

2. The deposition apparatus (110) according to claim 1, wherein the upper wall (124) of the processing compartment comprises a shield assembly (252) positioned between the lid assembly (114) and the processing compartment (120).

3. The deposition apparatus (110) according to claim 2, wherein the shield assembly (252) comprises a first material shield (254) and a second material shield (256), the first material shield and the second material shield being shifted with respect to each other in a vertical direction and/or a horizontal direction.

4. The deposition apparatus (110) according to any of claims 1 to 3, wherein the one or more pump ports (130) are arranged vertically below a drive unit port.

5. The deposition apparatus (110) according to any of claims 1 to 4, wherein the processing compartment (120) has a second lateral wall (126) opposing the first lateral wall (122) and a third cross-section having a third area (116) between the second lateral wall and a second side wall of the vacuum chamber (112) opposite the first side wall of the vacuum chamber, the third area (116) being substantially equal to or smaller than the second area (118), particularly wherein the first area (117) and the third area (116) are substantially equal.

6. The deposition apparatus (110) according to any of claims 1 to 5, the deposition apparatus further comprising a substrate handling segment (240) below the processing compartment, the substrate handling segment having a fourth cross-section having a fourth area (119) being substantially equal to or larger than the second area (118).

7. The deposition apparatus (110) according to claim 6, wherein the substrate handling segment (240) comprises a cold trap (232).

8. The deposition apparatus (110) according to any of claims 6 to 7, wherein the deposition apparatus comprises one or more flow limiters (234), particularly wherein the one or more flow limiters are arranged at the substrate handling segment and/or between the processing compartment and the substrate handling segment for adjusting a flow of gas through the first area and/or a third area.

9. The deposition apparatus (110) according to claim 8, wherein the one or more flow limiters (234) comprise a shutter, particularly for dynamically adjusting the flow of gas.

10. The deposition apparatus (110) according to any of claims 1 to 9, wherein the deposition apparatus (110) comprises one or more vacuum pumps connected to the one or more pump ports, particularly wherein the one or more vacuum pumps are selected from the group of: turbo molecular pumps, cryo pumps and/or combinations thereof.

11. The deposition apparatus (110) according to any of claims 1 to 10, wherein a pump capacity at the first area (116), the second area (118), the third area (117) and/or the fourth area (119) is at least 0.25 times of an applied pump capacity.

12. The deposition apparatus (110) according to any of claims 1 to 11, wherein the processing compartment comprises a deposition source (250), particularly an array of sputter cathodes.

13. A substrate processing system (300) comprising: a transfer chamber (380); one or more deposition apparatuses (110) according to any of claims 1 to 12 and coupled to the transfer chamber; and one or more load lock chambers (365) coupled to the transfer chamber.

14. A method (400) of processing a substrate supported on a substrate support, the method comprising: providing (402) a substrate to a processing compartment of a deposition apparatus according to any of claims 1 to 12; and applying (404) a vacuum to the deposition apparatus with one or more vacuum pumps, the vacuum pumps being asymmetrically arranged with respect to the substrate; and depositing (406) a material onto the substrate.

15. The method (400) according to claim 14, wherein a mean pressure in the process compartment is between 0.01 mbar and 0.08 mbar, particularly between 0.03 mbar and 0.06 mbar.