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WO2021244738A1 - Deposition apparatus, processing system, method of maintaining a deposition apparatus, and method of manufacturing a layer of an optoelectronic device - Google Patents

Deposition apparatus, processing system, method of maintaining a deposition apparatus, and method of manufacturing a layer of an optoelectronic device Download PDF

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Publication number
WO2021244738A1
WO2021244738A1 PCT/EP2020/065359 EP2020065359W WO2021244738A1 WO 2021244738 A1 WO2021244738 A1 WO 2021244738A1 EP 2020065359 W EP2020065359 W EP 2020065359W WO 2021244738 A1 WO2021244738 A1 WO 2021244738A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
deposition apparatus
segment
source frame
frame segment
Prior art date
Application number
PCT/EP2020/065359
Other languages
French (fr)
Inventor
Klaus SCHÜHLER
Ralph Lindenberg
Wolfgang Klein
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2020/065359 priority Critical patent/WO2021244738A1/en
Priority to KR1020227038145A priority patent/KR20220163422A/en
Priority to CN202180036943.8A priority patent/CN115885057A/en
Priority to PCT/EP2021/064831 priority patent/WO2021245154A1/en
Publication of WO2021244738A1 publication Critical patent/WO2021244738A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • Embodiments of the present disclosure relate to substrate processing, for example, in a cluster tool, particularly in a cluster tool with horizontal substrate handling.
  • a substrate processing apparatus such as a deposition apparatus, particularly for static deposition.
  • Embodiments may also relate to a horizontally orientated rotary cathode array, for example, straight or bowed, in a static deposition application, particularly for a cluster system layout.
  • embodiments relate to a deposition apparatus for large area substrate processing in a substrate processing system such as a cluster processing system, a substrate processing system for a large area substrate, a method of maintaining a deposition apparatus for large area substrate processing, and method of manufacturing a layer of an optoelectronic device.
  • a vacuum processing system is a system that includes at least a vacuum chamber with a processing area wherein a substrate can be positioned relative to the processing area for processing of a substrate.
  • a substrate may be coated by using a physical vapor deposition (PVD) process, such as a sputtering process or an evaporation process, a spraying process, etc., or a chemical vapor deposition (CVD) process.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a coating process can take place in the vacuum chamber.
  • material is ejected from a target positioned in the vacuum chamber.
  • the material is deposited onto the substrate.
  • the material ejection from the target can be provided in the vacuum chamber by bombarding the target with ions generated in a plasma region.
  • the target typically forms a sputter cathode with the application of an electric potential difference, such that in the presence of the resulting electric field, ions generated in the plasma region accelerate/move towards the electrically charged sputter cathode and impact on said sputter cathode such that atoms from the cathode are dislodged.
  • the sputter cathode thus provides the material for the material deposition and thus forms a material source.
  • Coating processes i.e. material deposition processes
  • large area substrates e.g. in display manufacturing technology.
  • Coated substrates can be used further in several technical fields with applications e.g. in microelectronics, in the production of semiconductor devices, for substrates with thin film transistors, but also for insulating panels, etc.
  • the tendency towards larger substrates, e.g. in manufacturing larger displays results in larger vacuum processing systems.
  • Sputtering can be conducted as magnetron sputtering, wherein a magnet assembly is utilized to confine the plasma for improved sputtering conditions.
  • the plasma confinement can also be utilized for adjusting the participle distribution of the material to be deposited on the substrate. For example, a uniform layer with defined layer properties is beneficial. This is particularly true for large area deposition, e.g. for manufacturing displays on large area substrates. Further, uniformity and process stability can be particularly difficult to achieve for static deposition processes, wherein the substrate is not moved continuously through a deposition zone.
  • the flexibility of the manufacturing system, the cost of ownership, and the footprint may be considered.
  • substrates are handled horizontally.
  • a vertical processing system a plurality of moving components is utilized to move the substrate from the horizontal orientation to a vertical orientation.
  • a horizontal processing system i.e. a processing system in which the substrate is maintained in a horizontal orientation can be beneficial.
  • a cluster system may increase the flexibility of manufacturing applications, since a central vacuum transfer chamber may flexibly move a substrate to various processing chambers.
  • Improvement of product maintenance cycles improves the throughput of a substrate processing apparatus or a substrate processing system, respectively.
  • an improved deposition apparatus, an improved processing system, an improved method of maintaining a deposition apparatus for display manufacturing, and an improved method for manufacturing a layer of an optoelectronic device are beneficial.
  • a deposition apparatus for large area substrate processing in a substrate processing system.
  • the deposition apparatus includes a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly provided within the source frame segment; a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to move the substrate support towards the source frame segment or the upper lid assembly, wherein the substrate handling segment comprises: one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and a bottom lid assembly detachable from the one or more side walls.
  • a deposition apparatus for large area substrate processing in a substrate processing system.
  • the deposition apparatus includes a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly comprising: a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode; and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment
  • a substrate processing system for a large area substrate includes a transfer chamber; one or more deposition apparatuses according to embodiments of the present disclosure coupled to the transfer chamber; and one or more load lock chambers coupled to the transfer chamber.
  • a method of maintaining a deposition apparatus for large area substrate processing the deposition apparatus having a vacuum chamber with a first slit opening facing a transfer chamber.
  • the method includes moving a substrate mask and at least one shielding towards a side of the vacuum chamber opposite the first slit opening; conducting maintenance of the substrate mask and the at least one shielding; and moving the substrate mask and the at least one shielding towards the first slit opening.
  • a method of manufacturing a layer of an optoelectronic device includes loading a large area substrate on a robot arm of a robot at least partially disposed in a central transfer chamber; transferring the large area substrate into a deposition apparatus according to any of embodiments described herein and sputtering a layer of material on the large area substrate.
  • FIG. 1 schematically shows a processing system having at least a deposition apparatus for horizontal sputtering from rotatable, cylindrical targets or cathodes according to embodiments of the present disclosure
  • FIG. 2 shows a schematic sectional view of a deposition apparatus including an array of horizontal sputter cathodes according to embodiments described herein;
  • FIG. 3 shows a schematic sectional view of a deposition apparatus including an array of horizontal sputter cathodes according to embodiments described herein;
  • FIG. 4 schematically shows a perspective view of a processing system containing at least a deposition apparatus for horizontal sputtering from rotatable, cylindrical targets according to embodiments of the present disclosure
  • FIG. 5 shows a portion of a deposition apparatus according to embodiments of the present disclosure illustrating cathode drive units and corresponding power supplies;
  • FIG. 6 shows a schematic view of a deposition apparatus including a vacuum chamber having three segments according to embodiments of the present disclosure
  • FIGS. 7A and 7B show schematic side views of a deposition apparatus and illustrate concepts of maintenance according to embodiments of the present disclosure
  • FIGS. 8 A and 8B show schematic side views of a deposition apparatus and illustrate concepts of maintenance according to embodiments of the present disclosure; and [0023] FIG. 9 shows a flow chart illustrating methods of maintaining a deposition apparatus for large area substrate processing according to embodiments of the present disclosure.
  • Embodiments of the present disclosure relate to a substrate processing system for a large area substrate.
  • the substrate processing system can be a cluster processing system with deposition apparatuses according to embodiments of the present disclosure, wherein the deposition apparatuses include an array of cylindrical sputter cathodes for deposition in a horizontal substrate orientation.
  • the cylindrical sputter cathodes may also be referred to as rotatable sputter cathodes, wherein a cylindrical target is rotated around an axis to improve material utilization.
  • a horizontal orientation is to be understood to distinguish from a vertical orientation.
  • a horizontal orientation of slit opening, of a substrate, of a sputter cathode, or of a sputter cathode array is understood to be horizontal +- 20°.
  • Embodiments further relate to a deposition apparatus with a horizontal array of sputter cathodes, particularly rotatable sputter cathodes having, for example, cylindrical targets.
  • the array of sputter cathodes may sputter down on a substrate in a stationary deposition process.
  • the array of sputter cathodes may be disposed above a substrate on which a material layer is deposited.
  • Embodiments may further relate to deposition apparatuses with an improved maintenance concept and methods of maintaining deposition apparatuses, particularly in a substrate processing system for large area substrates. Yet further, additionally or alternatively, embodiments may relate to methods of manufacturing a layer of an optoelectronic device with a deposition apparatus having a sputter cathode array depositing material on a horizontally oriented substrate.
  • an array of rotatable cathodes having cylindrical targets may be utilized. Rotatable cathodes having cylindrical targets can be beneficial due to the improved material utilization of the target. The improved material utilization may result in a maintenance cycle for target exchange that is comparably long.
  • a longer maintenance cycle of a cylindrical target and maintenance of other components having a shorter maintenance cycle may conflict.
  • a deposition apparatus and/or a processing system and improve maintenance concept according to embodiments of the present disclosure is beneficial. Further, easy and convenient access to components for maintenance may reduce the cost of ownership, particularly in light of the ergonomic access for maintenance.
  • FIG. 1 shows a substrate processing system 100.
  • the substrate processing system 100 can be a cluster system having a transfer chamber 120.
  • the transfer chamber 120 can be a central transfer chamber.
  • a robot 122 can at least be partially disposed within the transfer chamber 120.
  • the robot 122 can have a robot arm 154.
  • the robot 122 can transfer substrates between the chambers coupled to the transfer chamber 120.
  • At least one load lock chamber 105 can be coupled to the transfer chamber 120.
  • FIG. 1 shows two load lock chambers 105 coupled to the transfer chamber 120.
  • One or more deposition apparatuses 110 can be coupled to the transfer chamber 120.
  • the robot 122 can transfer the substrate between a load lock chamber and a deposition chamber and vice versa or between different deposition chambers attached to the transfer chamber 120.
  • a deposition apparatus 110 includes a vacuum chamber. Further, the transfer chamber 120 can be a vacuum transfer chamber. Accordingly, a substrate can be handled under vacuum from the load lock chamber to the transfer chamber, from the transfer chamber to a vacuum chamber of a deposition apparatus 110 and from a vacuum chamber of the first deposition apparatus to a vacuum chamber of a further deposition apparatus.
  • the apparatuses and systems described herein are configured in order to move and process large area substrates that may in particular have a surface of 1 m 2 or above.
  • substrate may particularly embrace substrates like glass substrates, for example, a glass plate.
  • a substrate may include wafers, slices of transparent crystal such as sapphire or the like.
  • substrate may embrace other substrates that can be inflexible or flexible, like e.g. a foil or a web.
  • the substrate may be formed by any material suitable for material deposition.
  • FIG. 1 schematically shows a substrate processing system 100 including one or more deposition apparatuses 110 according to the present disclosure.
  • the one or more deposition apparatuses 110 are intended for the deposition of material on a substrate and include a vacuum chamber and/or a sputter source area according to embodiments of the present disclosure.
  • An array of deposition sources configured to deposit material on the substrate at a processing area in a horizontal orientation can be provided.
  • the substrate processing system 100 further includes a transfer chamber 120, particularly a vacuum transfer chamber coupled to the one or more deposition apparatuses.
  • FIG. 1 further shows load lock chambers 105.
  • the vacuum transfer chamber 120 is coupled to the one or more deposition apparatuses.
  • the vacuum transfer chamber can move substrates to the one or more vacuum chambers through openings, particularly horizontal slit openings.
  • the substrate processing system 100 may include one or more support chambers arranged to perform specific additional functions like storage of substrates.
  • the processing system may include one or more load lock chambers 105 that are configured to receive a substrate under atmospheric pressure or not under vacuum conditions A and then to transfer the substrate into the vacuum transfer chamber under vacuum conditions V.
  • the load chamber may also receive a substrate from the transfer chamber under a vacuum condition V and provide said substrate under atmospheric pressure or not under vacuum conditions A.
  • a mechanism such as a robot, is configured to transfer the substrate to vacuum chambers adjacent to the vacuum transfer chamber 120, e.g. for processing.
  • the substrate is transferred from the vacuum transfer chamber 120 to vacuum chambers 210 and/or to other support chambers (not shown) through openings with a robot 122 or the like.
  • a vacuum condition V is maintained inside the substrate processing system 100 with the exception of load lock chambers 105, wherein a change from vacuum conditions V to atmospheric conditions or non-vacuum conditions A and vice versa is possible in order to insert and/or remove the substrate before or after processing without affecting the vacuum V in other parts of the substrate processing system 100 and in particular in the vacuum chambers, in the vacuum transfer chamber 120 and/or in the support chambers of the substrate processing system 100.
  • slit openings For transfer between the transfer chamber 120 and the adjacent vacuum chambers, for example, vacuum chambers of a load lock chamber 105 or vacuum chambers of a deposition apparatus 110, slit openings, particularly horizontal slit openings can be provided in the transfer chamber and the adjacent vacuum chambers.
  • maintenance area 115 is provided on one side of the deposition apparatus 110.
  • the maintenance area is on a side of the deposition apparatus opposite the slit opening facing the transfer chamber 120. Accordingly, the maintenance area 115 can be provided radially outward from the central transfer chamber.
  • Transport path 130 for example, rails, guiding rails, guiding paths, can be provided from a first position at a deposition apparatus 110 to the second position at the maintenance area 115.
  • One or more components of the deposition apparatus 110 can be moved along the transport path 130 between the deposition apparatus 110 and the maintenance area 115.
  • the substrate processing system 100 can have a footprint for manufacturing within the circle.
  • the surrounding area for maintenance can be provided between the dotted circle 102 and the dotted circle 104.
  • a substrate processing system for a large area substrate includes a transfer chamber and one or more deposition apparatuses according to embodiments of the present disclosure.
  • the one or more deposition apparatuses are coupled to the transfer chamber.
  • one or more load lock chambers are coupled to the transfer chamber.
  • the transfer chamber has a rectangular, a pentagonal or a hexagonal shape.
  • the transfer chamber can be a central transfer chamber.
  • the transfer chamber can have a longitudinal layout as compared to a concentric layout shown in the figures.
  • the transfer chamber has 2 or more horizontal slit openings, particularly 4 or more horizontal slit openings.
  • the processing apparatus may further include a robot disposed at least partially with the transfer chamber, the robot having a robot arm being movable into an adjacent chamber.
  • one or more further processing chambers may be coupled to the vacuum transfer chamber, for example, a central transfer chamber.
  • the one or more further processing chambers may be selected from a heating chamber coupled to the transfer chamber, a cooling chamber coupled to the transfer chamber, a pre-cleaning chamber coupled to the transfer chamber, a storage chamber coupled to the transfer chamber, an examination chamber coupled to the transfer chamber, and a CVD chamber coupled to the transfer chamber.
  • One or more of the above chambers, of the same type and/or different type may be coupled to a central transfer chamber.
  • the examination chamber may, for example, measure the thickness of a layer deposited in a previous deposition process or may control one or more layer thicknesses before the substrate is unloaded from a processing system. A control of layer thickness can be provided.
  • the cleaning or precleaning chamber may remove oxides from, for example, metal layers, or may remove photoresist residuals from a previous manufacturing operation.
  • a cluster processing system allows for flexible adaptation of various processes by having different processing systems and by the ability to move flexibly between different deposition apparatuses.
  • multiple metal deposition apparatuses can be provided.
  • the metals can be the same metal or can be different metals.
  • deposition apparatuses depositing the same metal may be utilized to increase the layer thickness of a specific material layer while maintaining the tech time of the processing system.
  • different processes may be provided in different deposition apparatuses, i.e. production modules.
  • a first deposition apparatus and a second deposition apparatus are configured to deposit a layer of a first metal in both the first deposition apparatus and the second deposition apparatus, to deposit a layer of a first metal and a layer of a second metal, to deposit layers with two reactive process, to deposit layers with two non-reactive processes, or to deposit layers with a reactive process and a non-reactive process.
  • FIG. 2 shows a deposition apparatus 110.
  • the deposition apparatus 110 includes a vacuum chamber 210.
  • the vacuum chamber 210 can include three segments.
  • the three segments can be defined by the functionality of the segments, i.e. some segments or a portion of the segment and an adjacent segment may be fixedly connected or integrally formed. Separating the vacuum chamber into segments allows for reduced cost of ownership. Particularly, maintenance of a deposition apparatus can be improved by segmentation according to embodiments of the present disclosure.
  • the vacuum chamber 210 as exemplarily shown in FIG. 2 includes a source frame segment 212.
  • the source frame segment can be a fixed segment that is at a fixed position relative to the processing system, for example, relative to the central transfer chamber.
  • the source frame segment is configured to support the source assembly and/or a source support assembly, respectively.
  • a plurality of sputter cathodes 250 and a plurality of anodes 252 are provided in the source frame segment.
  • one or more other sources may be provided and/or supported by a source support assembly.
  • An upper lid assembly 214 is provided over the source frame segment 212.
  • the upper lid assembly 214 can be removed from the source frame segment, for example, for maintaining components disposed in the upper lid assembly and/or for maintaining components of the source assembly or the source support assembly.
  • a substrate handling segment 216 is provided below the source frame segment.
  • the substrate handling segment 216 includes or houses components for substrate handling, substrate alignment, substrate masking, substrate support, or the like.
  • the substrate handling segment has a first horizontal slit opening configured to load and unload substrates into the vacuum chamber 210.
  • the first horizontal slit opening faces the transfer chamber 120 shown in FIG. 1.
  • the first horizontal slit opening beam is at a first side of the substrate handling segment.
  • the substrate handling segment 216 may have an upper portion and a lower portion, wherein the lower portion may include a bottom lid assembly.
  • the upper portion of the substrate handling segment 216 includes the first horizontal slit opening.
  • the upper portion of the substrate handling segment 216 is fixedly coupled to the source frame segment or integrally formed with the source frame segment 212. Accordingly, the first horizontal slit opening is at a predetermined position relative to the source assembly. Additionally or alternatively, the first horizontal slit opening remains at a predetermined position relative to the source assembly.
  • the vacuum chamber 210 can be supported by a pedestal 218.
  • the pedestal 218 can include a base frame or three or more stands. Particularly, the pedestal may support at least the source frame segment 212.
  • a deposition apparatus for large area substrate processing in a cluster processing system.
  • the deposition apparatus includes a vacuum chamber.
  • the vacuum chamber includes a source frame segment, an upper lid assembly over the source frame segment and detachable from the source frame segment, and a substrate handling segment below the source frame segment.
  • the substrate handling segment has a first horizontal slit opening configured to load and unload a substrate, wherein the first horizontal slit opening is at a first side of the substrate handling segment.
  • the deposition apparatus includes a source support assembly.
  • the source support assembly includes a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment of the vacuum chamber.
  • the deposition apparatus further includes a substrate support within the substrate handling segment and an actuator coupled to the substrate support to vertically move the substrate support.
  • FIG. 2 shows the substrate support body 220 and the actuator 222 coupled to the substrate support body 220.
  • the actuator 222 can be a linear actuator or drive configured to move the substrate support body 220 vertically.
  • FIG. 2 shows the substrate support body 220 in a first position below the upper ends of the substrate support pins 320.
  • the actuator 222 may move the support body 220, to a second position, i.e. an upper position, wherein the substrate support body is positioned above the upper ends of the substrate support pins 320.
  • the substrate disposed on the substrate support pins 320 will be contacted by the substrate support body upon movement of the substrate support body from the first position to the second position.
  • the substrate can be disposed on the substrate support body for material deposition by lifting the substrate support body from the first position to the second position. Further, the substrate can be disposed on the substrate support pins 320, for example, after the position, by lowering the substrate support body holding the substrate from the second position to the first position.
  • the support body 220 acts as a table to support the substrate during deposition of a material layer on the substrate. If the table is moved to the upper position, i.e. the second position, the substrate can be disposed below the edge exclusion mask 230.
  • the small edge at the perimeter of the substrate for example, an edge of up to a few millimeters is covered by the edge exclusion mask during material deposition. The edge of the substrate is not covered with the deposition material.
  • the edge exclusion mask 230 provides an edge exclusion on the table supporting the substrate.
  • the edge exclusion mask 230 can be coupled with an edge exclusion support frame to the substrate handling segment 216 of the vacuum chamber 210.
  • one or more shieldings can be provided within the vacuum chamber 210.
  • the shieldings within the vacuum chamber reduce or prevent coating of interior surfaces of the vacuum chamber 210 or the deposition apparatus 110 with the coating material during operation of the deposition sources.
  • FIG. 2 shows side protection shields 242.
  • the side protection shields can be provided within the source frame segment. Further, the side protection shields may extend upward into the upper lid assembly 214 and may extend downward into the substrate handling segment 216.
  • the side protection shields may further be provided by several pieces, which are attached to each other. Having smaller pieces may allow for easier maintenance of the side protection shields. Maintenance of the side protection shields may include cleaning of the side protection shields after a predetermined amount of deposition material has accumulated on the side protection shields.
  • FIG. 2 further shows a pre-sputter shield 244.
  • the pre-sputter shield 244 can be provided in the upper lid assembly 214.
  • the pre-sputter shield may be coated with deposition material if a sputter cathode 250 is operated with a magnetron facing upwardly in FIG. 2, i.e. for cleaning of the target of the cathode.
  • the pre-sputter shield 244 may additionally or alternatively protect surfaces of the upper lid assembly 214 from spray coating of molecules of the deposition material.
  • FIG. 2 shows an array of sputter cathodes 250.
  • the sputter cathodes 250 are rotatable sputter cathodes having a cylindrical target.
  • the sputter cathodes 250 extend along a rotation axis, which is perpendicular to the paper plane of FIG. 2.
  • the cross- section of the array sputter cathodes shown in FIG. 2 are provided along one line, i.e. a horizontal line in FIG. 2.
  • the sputter cathodes of the area of sputter cathodes are provided at the same height.
  • the plane defined by the area of anodes can be at the plane defined by the array of cathodes, can be between the plane defined by the array of cathodes and the upper lid assembly 214, or can be between the plane defined by the array of cathodes and the support body.
  • FIG. 3 further shows a deposition apparatus similar to the deposition apparatus shown in FIG. 2.
  • the source assembly may deviate from the embodiments described with respect to FIG. 2, in that the source assembly or a corresponding source support assembly includes a first group of rotatable sputter cathodes 250, which are provided at a first height in the deposition apparatus and a second group of rotatable sputter cathodes 350, which are provided at a second height in the deposition apparatus.
  • the second group of rotatable cathodes may particularly include a first rotatable sputter cathode 350 at the first edge or border of the array of sputter cathodes and a second rotatable sputter cathode 350 at a second, opposing edge or border of the array of sputter cathodes.
  • the second group of rotatable cathodes can be provided at a lower height as compared to the first group of rotatable cathodes.
  • cathode drive units and corresponding bearings to support the rotatable sputter cathode may be provided at a lower height for the second group of rotatable cathodes as compared to the first group of rotatable cathodes.
  • the source assembly may be provided on a curved surface.
  • cathode drive units or sputter cathodes at an edge or border of the array may be provided closer to the substrate support.
  • Anodes 352 at an edge or border of the source assembly may be provided at a lower height and, for example, closer to the substrate support body.
  • the curved surface may include a straight portion at a center of the sputter cathode array and may include a bent portion at opposite ends of the sputter cathode array. Further, the curved surface may be bowed such that a center sputter cathode is further distant from the support body 220 as compared to an outer sputter cathode.
  • a first group of cathode drive units is at a different height to a second group of cathode drive units. Further, additionally or alternatively, and as exemplarily illustrated in FIGS. 4 and 5, the first group of cathode drive units is provided at a side of the source frame segment opposite the first side of the substrate handling segment. According to some embodiments, the source support assembly may further include a first group of cathode bearings opposite the first group of cathode drive units. According to yet further implementations, which can be combined with other embodiments of the present disclosure, the source support assembly includes a plurality of anodes.
  • the source frame segment may support a deposition source, e.g. a sputter source.
  • the one or more sources can be provided in an array or in another pattern.
  • the upper lid assembly may include one or more gas passages for process gases.
  • the substrate support body is movable in an essentially vertical direction and in horizontal directions. For example, the process can be measured in situ and/or the process conditions can be controlled in order to provided the layer properties according to the process specifications.
  • FIG. 3 shows further details regarding the vacuum chamber, which may be combined with other embodiments described herein.
  • the substrate handling segment 216 of the vacuum chamber 210 includes an upper portion that is fixedly coupled or integrally formed with the source frame segment 212 of the vacuum chamber.
  • a lower lid assembly 318 is removably coupled to the vacuum chamber 210, for example, at a flange 316 of the substrate handling segment 216 of the vacuum chamber 210.
  • having the lower lid assembly detachably coupled to an upper portion of the substrate handling segment the vacuum chamber in general allows for improved maintenance concept.
  • one or more flanges 310 to be connected to a vacuum pump are provided at the fixed portion of the substrate handling segment of the vacuum chamber.
  • the one or more flanges can be coupled to the side wall of the substrate handling segment of the vacuum chamber.
  • a vacuum pump is provided at a side wall of the vacuum chamber 210.
  • the vacuum chamber is not provided below the deposition source array, the substrate, or the substrate support body. Providing the vacuum pumps at a side increases the maintenance cycle for the vacuum pumps and provides a better separation of components according to their maintenance cycles, which is described in more detail below.
  • Embodiments of the present disclosure relate to static deposition as compared to dynamic deposition, wherein for dynamic deposition the substrate is continuously moved past a deposition source, for example, a line source.
  • a deposition source for example, a line source.
  • Embodiments described herein particularly relate to deposition of materials, e.g. for display manufacturing on large area substrates.
  • large area substrates or carriers supporting one or more substrates may have a size of at least 0.5 m 2 .
  • the deposition system may be adapted for processing large area substrates, such as substrates of GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. According to yet further implementations, half sizes of the above- mentioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers may be processed and coated in deposition systems according to the present disclosure.
  • the methods provide a sputter deposition for a positioning of the substrate for a static deposition process.
  • a static deposition process such as processing of horizontally oriented large area substrates
  • a dynamic sputtering i.e. an inline process where the substrate moves continuously or quasi-continuously adjacent to the deposition source, would be easier due to the fact that the process can be stabilized prior to the substrates moving into a deposition area, and then held constant as substrates pass by the deposition source.
  • Mura that may occur based on a distinct position of neighboring sputter cathodes is avoided by the continuous or quasi-continuous movement of the substrate.
  • a dynamic deposition can have other disadvantages, e.g. particle generation. This might particularly apply for TFT backplane deposition.
  • a static deposition process which is different as compared to dynamic deposition processes, does not exclude any movement of the substrate as would be appreciated by a skilled person.
  • a static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is essentially constant during deposition, a dithering substrate position during deposition, and/or a wobbling substrate position during deposition.
  • a static deposition process may further be a deposition process for which the cathodes are provided in one chamber, i.e.
  • a static deposition process can be understood as a deposition process with a static position, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate.
  • a static deposition process, as described herein, can be clearly distinguished from a dynamic deposition process without the necessity that the substrate position for the static deposition process is without any movement during deposition.
  • the support body 220 providing a support table during layer deposition on the substrate may be coupled to an actuator to be moved horizontally, i.e. in a left-right-direction in FIGS. 2 and 3.
  • the support body 220 providing the support table during layer deposition on the substrate can be moved vertically up and down during layer deposition of the material on the substrate.
  • the actuator 222 may be utilized for such a vertical movement.
  • the edge exclusion mask 230 may be moved together with the substrate for vertical movement during layer deposition.
  • the movements of the support body may be combined and may additionally or alternatively be provided back and forth.
  • the movement, particularly in a horizontal direction, may correspond to a sputter cathode distance or may be smaller than a sputter cathode distance, e.g. half of the sputter cathode distance.
  • Various types of movement of the substrate or substrate support may be referred to as substrate wobbling herein.
  • the array of sputter cathodes may be moved horizontally, i.e. in the left right direction in FIGS. 2 and 3.
  • the area of sputter cathodes may be moved relative to the source frame segment 212 of the vacuum chamber 210.
  • the array of sputter cathodes may be moved vertically up and down during layer deposition.
  • the various types of movement of the cathode array (or individual cathodes relative to the source frame segment) may be referred to as deposition array wobbling herein.
  • the horizontal and vertical movements described above may be combined with each other.
  • Substrate wobbling and deposition array wobbling may both be provided. Movement of the substrate and the array of sputter cathodes relative to each other can increase the uniformity of the deposited layer and may reduce or avoid mura.
  • a magnetron within each of the rotatable sputter cathodes may be moved by an angle from a first position, e.g. a left position in FIGS. 2 and 3, to a second position, for example, a right position in FIGS. 2 and 3, and particularly a through a center position with a magnetron orientation perpendicular to the support body surface.
  • the magnetron movement can be provided back and forth and may be referred to as magnetron wobbling.
  • the first position may be a first end position of the angular movement and the second position may be a second end position of the angular movement on an opposing side of the center position.
  • the movement can be back and forth between the first position and the second position, wherein the magnetron is continuously moved with the exception of the turnaround positions, i.e. the two end positions.
  • the magnetron can be moved to the first position and stopped at the first position. Thereafter, the magnetron may be moved to the second position and stopped at the second position. Material deposition may occur at the first position and the second position. Material deposition may be stopped while moving from the first position to the second position or vice versa.
  • the number of cycles of moving from the first position to the second position or the number of cycles of moving from the second position to the first position may be synchronized with the deposition time for depositing one layer on the substrate.
  • the number of cycles and the speed of movement may be chosen such that the time period for one cycle multiplied with an integer n or two times an integer n equals the deposition time.
  • the source support assembly includes a first group of magnetron drive units, each magnetron drive unit configured to move a magnetron by an angle within the horizontal cylindrical sputter cathode.
  • FIGS. 4 and 5 illustrate a deposition apparatus and a portion of a central transfer chamber according to some embodiments of the present disclosure.
  • the central transfer chamber (see also FIG. 1) includes four or more sidewalls 420, for example, 6 sidewalls as shown in FIG. 4. Each of the sidewalls may have a horizontal slit opening 422.
  • FIG. 2 illustrates a robot arm 154 being partially inserted in the vacuum chamber of a deposition apparatus through a horizontal slit opening 416 of the vacuum chamber of the deposition apparatus.
  • the vacuum chamber of the deposition apparatus includes a source frame segment 212, an upper lid assembly 214 and a substrate handling segment 216.
  • a dashed line shows the separation between the functional portion supporting the deposition source assembly, i.e. the source frame segment and the functional portion supporting components for substrate handling, substrate alignment, substrate support, substrate masking, or the like.
  • cathode drive units 540 can be coupled to the source frame segment 212 and may be operatively coupled to a rotatable sputter cathode for rotation of the cylindrical target.
  • a cathode drive cabinet 440 may be provided adjacent to the source frame segment 212 of the vacuum chamber 210. Particularly, the cathode drive cabinet 440 may be provided at the side of the vacuum chamber opposite the horizontal slit opening 416. Further, a supply cabinet 430 can be provided above the cathode drive cabinet. The supply cabinet 430 and the cathode drive cabinet 440 may also be combined with each other.
  • the supply cabinet 430 may include, for example, power supplies 530, for providing power to the rotatable sputter cathodes 250.
  • the deposition apparatus may include one or more power supplies selected from the group consisting of or including a DC power supply, a pulsed DC power supply and a bipolar pulsed power supply.
  • the supply cabinet 430 may further include cooling units for cooling fluid for the sputter cathodes or other electrical elements for the operation of the deposition apparatus.
  • the cathode drive cabinet and the supply cabinet can be provided at a side of the vacuum chamber opposite the central transfer chamber. Accordingly, easy access from the maintenance area 115 (see FIG. 1) can be provided.
  • FIG. 4 shows the pedestal 218, on which the vacuum chamber of the deposition apparatus is provided.
  • the lower lid assembly 318 is provided on the movable pedestal 418.
  • the movable pedestal 418 can be moved, particularly together with the lower lid assembly 318, along the transport path 130.
  • the movable pedestal can be moved in the maintenance area 115 (see FIG. 1).
  • FIG. 4 shows the support body 220 supported by the lower lid assembly 318.
  • a plurality of components can be supported by the lower lid assembly 318. Accordingly, upon moving the movable pedestal 418 along the transport path 130, the components supported by the lower lid assembly 318 are moved in the maintenance area 115. Improved maintenance can be provided.
  • the movable pedestal and particularly the combination of the movable pedestal 418 with the lower lid assembly 318 can be moved similarly to a drawer and may include a plurality of shieldings, the edge exclusion mask 230, the support body 220, i.e. the support table for the substrate, the plurality of lift pins, the actuator 222 configured to move the support body, or the like.
  • FIG. 6 shows a schematic view of a deposition apparatus illustrating a yet further embodiment.
  • the pedestal 218 supports a portion of the vacuum chamber of the deposition apparatus.
  • An upper lid assembly 214 is provided on a source frame segment of the vacuum chamber.
  • the pre-sputter shields are provided by first pre-sputter shield 644 and second pre-sputter shield 642.
  • the first pre-sputter shield 644 and the second pre-sputter shield 642 are separated from each other to provide a gas inlet passage for processing as for the sputtering process.
  • a first group of sputter cathodes 250 and a second group of sputter cathode 350 are shown in FIG. 6.
  • FIG. 6 further shows alignment actuator 620.
  • the alignment actuator 620 can move the substrate 650 horizontally while being supported on the substrate support pins. Accordingly, the substrate 650 can be aligned relative to the support body 220. Alignment of the substrate relative to the support body 220 provides the substrate at a predetermined position such that the edge exclusion mask 230 masks a predetermined portion of the substrate during layer manufacturing.
  • a deposition apparatus as disclosed herein may further include a substrate mask within the substrate handling segment and at least one shielding within the substrate handling segment.
  • a maintenance area is provided on a second side of the substrate handling segment opposite the first side of the substrate handling segment, i.e. the side of the substrate handling segment including the horizontal slit opening, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding.
  • the components may be provided to the maintenance area by movement of the movable pedestal 418 shown in FIG. 6.
  • the components may be provided to the maintenance area by movement of the cart 710 shown in FIGS. 7 A and 7B.
  • Embodiments of the present disclosure provide a deposition apparatus with an array of rotatable sputter cathodes, particularly rotatable sputter cathodes having cylindrical targets.
  • the deposition apparatus is configured for static deposition.
  • inventions relate to an improved deposition apparatus having an improved maintenance concept.
  • the improved maintenance concept considers functional segments of a vacuum chamber of the deposition apparatus.
  • the functional segments correlate two different maintenance cycles of components within the segments. Accordingly, one access route is provided for components with short maintenance cycles. At least one different access route is provided for components with longer maintenance cycles. Accordingly, the overall maintenance concept is improved.
  • FIGS. 7A and 7B illustrate different side views of a deposition apparatus and illustrate an option for the improved maintenance concept.
  • the vacuum chamber includes a source frame segment 212 for supporting the deposition sources, for example, an array of rotatable sputter cathodes 250. Further, the source frame segment 212 supports corresponding cathode drive units 540.
  • the upper lid assembly 240 is detachably provided adjacent to the source frame segment 212.
  • a substrate handling segment 216 is provided below the source frame segment 212.
  • a horizontal slit opening is provided in the substrate handling segment.
  • a maintenance slit opening is provided at a side of the substrate handling segment 216 that is opposite the horizontal slit opening 416 for loading and unloading of the substrate.
  • An arm or handler of a cart 710 can be inserted into the portion of the vacuum chamber corresponding to the substrate handling segment 216 and may couple to one or more of the components provided in the substrate handling segment. These components may include the edge exclusion mask, mask shields, or the like. Further, a support body or other components may be coupled to the arm or handler of the cart 710. After a corresponding vertical movement of the arm or handler of the cart, the components can be removed from the vacuum chamber and transported by the cart 710 along the transport path in the maintenance area 115. FIGS.
  • FIGS. 7A and 7B illustrate the support body 220 and the actuator coupled to the support body in a lower position such that the substrate support pins extend above the surface of the support body. Additionally, FIGS. 7A and 7B show the support body 220’ in the upper position. It is to be understood that this is the same support body at different times during operation, i.e. in a first position (lower position) and a second position (upper position).
  • FIGS. 8 A and 8B illustrate different side views of a deposition apparatus and illustrate a further option for the improved maintenance concept.
  • FIGS. 8 A and 8B correspond to some of the details previously described with respect to FIG. 6, wherein repetition of the description is avoided.
  • the vacuum chamber includes the source frame segment 212 and an upper lid assembly 214 detachably connected to the source frame segment.
  • the lower lid assembly is detachably coupled to an upper portion of the substrate handling segment 216.
  • a plurality of components such as the support body, i.e. the substrate table, alignment actuators, substrate support pins and one or more shieldings are coupled to the lower lid assembly.
  • the components can be moved with the movable pedestal 418 into the maintenance area 115.
  • the movable pedestal 418 can have a base frame with rollers 818 or the like.
  • the substrate handling segment can be fixedly coupled to the source frame segment or is integrally formed with the source frame segment and wherein the substrate handling segment has a second horizontal slit opening to insert an arm of a maintenance cart, the second horizontal slit opening being at the second side of the substrate handling segment. This is for example shown in FIGS. 7 A and 7B.
  • the substrate handling may include one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment and a bottom lid assembly detachable from the one or more side walls.
  • the bottom lid can be movable into the maintenance area.
  • the bottom lid assembly can include a transport unit, such as a movable pedestal, configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa.
  • the cart shown in FIG. 7 or the movable bottom lid assembly may also be moved to another maintenance area, which is e.g. more remote as compared to the maintenance area shown in FIG. 1
  • the transport unit can include a lift function to vertically move the bottom lid assembly. Accordingly, the bottom lid assembly can be vertically moved such that the bottom lid assembly can be lowered from an operation condition, wherein the vacuum chamber is sealed. The components coupled to the bottom lid assembly are lowered together with the bottom lid assembly such that the components can be moved aside vertically towards the maintenance area, i.e. below a lower edge of the side walls of the substrate handling segment.
  • the deposition apparatus may further include an alignment system configured to move a substrate relative to the substrate support and a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support.
  • One or more components, particularly four or more components, of the substrate support, the actuator, the substrate mask, the at least one shielding, the alignment system, and the pin array are coupled to the bottom lid assembly to be movable together with the bottom lid assembly upon actuation of the transport unit.
  • FIGS. 6 to 8B describe the maintenance concept according to embodiments of the present disclosure with respect to a deposition apparatus including rotatable sputter cathodes and/or corresponding cathode drive units.
  • the maintenance concepts and the deposition apparatuses utilizing the maintenance concept according to embodiments of the present disclosure may also be provided for other deposition sources.
  • a deposition apparatus for large area substrate processing in a processing system.
  • the deposition apparatus includes a vacuum chamber having a source frame segment, an upper lid assembly over the source frame segment and detachable from the source frame segment and a substrate handling segment below the source frame segment, the substrate handling segment having a first horizontal slit opening configured to load and unload a substrate, the first horizontal slit opening being at a first side of the substrate handling segment.
  • the deposition apparatus further includes a source support assembly and/or a source assembly provided within the source frame segment.
  • the deposition apparatus further includes a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to vertically move the substrate support wherein the substrate handling segment includes one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment and a bottom lid assembly detachable from the one or more side walls.
  • the bottom lid is movable into the maintenance area.
  • the bottom lid may include a transport unit configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa. Further, the transport unit may have a lift function to vertically move the bottom lid.
  • the deposition apparatus may further include a substrate mask within the substrate handling segment, and at least one shielding within the substrate handling segment.
  • a maintenance area is disposed on a second side of the substrate handling segment opposite the first side of the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding.
  • an alignment system is configured to move a substrate relative to the substrate support and/or a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support.
  • One or more, particularly four or more of the components supported by the lower lid assembly can be moved into the maintenance area together with the lower lid assembly.
  • FIG. 9 shows a flowchart illustrating a method of maintaining a deposition apparatus, particularly for large area substrate processing.
  • the deposition apparatus includes a vacuum chamber with the first horizontal slit opening facing a transfer chamber.
  • an edge exclusion mask or a substrate mask, respectively and at least one shielding is moved downward, for example, by moving a lid assembly of the vacuum chamber or by moving an arm of a cart reaching into the vacuum chamber.
  • the substrate mask and the at least one shielding is moved towards the side of the vacuum chamber opposite a first horizontal slit opening, i.e. a slit opening facing the central transfer chamber of a cluster processing system (see operation 904).
  • maintenance of the substrate mask and the at least one shielding is conducted.
  • the substrate mask and the at least one shielding is moved towards the first horizontal slit opening at operation 908.
  • the lower lid assembly may be moved towards the horizontal slit opening and the vacuum chamber of the deposition apparatus may be sealed to be evacuated for further deposition processes.
  • the substrate mask and the at least one shielding is moved by moving a lower lid assembly of the vacuum chamber.
  • one or more of a substrate support and an actuator coupled to the substrate support, an alignment system, and a pin array can be moved together with a bottom lid assembly of the vacuum chamber.
  • an upper lid assembly of the vacuum chamber can be removed.
  • the first sputter cathode and/or a first anode can be removed from the top of the vacuum chamber, particularly after removal of the upper lid assembly. Removal of the upper lid assembly provides access to the source frame segment from above.
  • maintenance can be provided by having personal standing in the vacuum chamber, and particularly standing upright within the source frame segment.
  • a second sputter cathode and/or a second anode at a second opposite end of the array of sputter cathodes may be removed to provide the maintenance access for personal at both ends of the sputter cathodes.
  • a maintenance platform may be installed below the vacuum chamber after the lower lid assembly has been moved. Further sputter cathodes may be disassembled or maintained from the bottom of the vacuum chamber. Maintenance personnel may occupy some of the area that has previously been occupied by the first sputter cathode or the second cathode previously removed from the top of the vacuum chamber.
  • a method of manufacturing a layer of optoelectronic devices includes loading a large area substrate on a robot arm of a robot at least partially disposed in a central transfer chamber.
  • the large area substrate is transferred into a deposition apparatus according to embodiments of the present disclosure and a layer of material is deposited, for example, sputtered on the large area substrate.
  • An array of rotatable sputter cathodes sputtering down on a substrate can be provided.
  • Access to components of a deposition apparatus can be provided according to the length of the maintenance cycles of the components. Easy access can be provided to a deposition apparatus and maintenance can be improved.

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Abstract

A deposition apparatus for large area substrate processing in a substrate processing system is described. The deposition apparatus includes a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly provided within the source frame segment; a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to move the substrate support towards the source frame segment or the upper lid assembly, wherein the substrate handling segment comprises: one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and a bottom lid assembly detachable from the one or more side walls.

Description

DEPOSITION APPARATUS, PROCESSING SYSTEM, METHOD OF MAINTAINING A DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING A UAYER OF AN OPTOEUECTRONIC DEVICE
FIEUD
[0001] Embodiments of the present disclosure relate to substrate processing, for example, in a cluster tool, particularly in a cluster tool with horizontal substrate handling. Embodiments of the present disclosure relate to a substrate processing apparatus, such as a deposition apparatus, particularly for static deposition. Embodiments may also relate to a horizontally orientated rotary cathode array, for example, straight or bowed, in a static deposition application, particularly for a cluster system layout. Specifically, embodiments relate to a deposition apparatus for large area substrate processing in a substrate processing system such as a cluster processing system, a substrate processing system for a large area substrate, a method of maintaining a deposition apparatus for large area substrate processing, and method of manufacturing a layer of an optoelectronic device.
BACKGROUND
[0002] A vacuum processing system is a system that includes at least a vacuum chamber with a processing area wherein a substrate can be positioned relative to the processing area for processing of a substrate. Several methods are known for the deposition of a material on a substrate. For example, a substrate may be coated by using a physical vapor deposition (PVD) process, such as a sputtering process or an evaporation process, a spraying process, etc., or a chemical vapor deposition (CVD) process. A substrate on which material is deposited, i.e. a substrate to be coated, is introduced into a vacuum chamber of a vacuum processing system and positioned relative to a processing area of the vacuum chamber of the vacuum processing system.
[0003] For example, a coating process can take place in the vacuum chamber. For a sputter deposition process, material is ejected from a target positioned in the vacuum chamber. The material is deposited onto the substrate. The material ejection from the target can be provided in the vacuum chamber by bombarding the target with ions generated in a plasma region. The target typically forms a sputter cathode with the application of an electric potential difference, such that in the presence of the resulting electric field, ions generated in the plasma region accelerate/move towards the electrically charged sputter cathode and impact on said sputter cathode such that atoms from the cathode are dislodged. The sputter cathode thus provides the material for the material deposition and thus forms a material source.
[0004] Coating processes, i.e. material deposition processes, may be considered for large area substrates, e.g. in display manufacturing technology. Coated substrates can be used further in several technical fields with applications e.g. in microelectronics, in the production of semiconductor devices, for substrates with thin film transistors, but also for insulating panels, etc. The tendency towards larger substrates, e.g. in manufacturing larger displays results in larger vacuum processing systems.
[0005] Sputtering can be conducted as magnetron sputtering, wherein a magnet assembly is utilized to confine the plasma for improved sputtering conditions. The plasma confinement can also be utilized for adjusting the participle distribution of the material to be deposited on the substrate. For example, a uniform layer with defined layer properties is beneficial. This is particularly true for large area deposition, e.g. for manufacturing displays on large area substrates. Further, uniformity and process stability can be particularly difficult to achieve for static deposition processes, wherein the substrate is not moved continuously through a deposition zone.
[0006] For large area substrates, the flexibility of the manufacturing system, the cost of ownership, and the footprint may be considered. Further, in display manufacturing fabrication, substrates are handled horizontally. For a vertical processing system, a plurality of moving components is utilized to move the substrate from the horizontal orientation to a vertical orientation. Accordingly, a horizontal processing system, i.e. a processing system in which the substrate is maintained in a horizontal orientation can be beneficial. Yet further, a cluster system may increase the flexibility of manufacturing applications, since a central vacuum transfer chamber may flexibly move a substrate to various processing chambers. [0007] Improvement of product maintenance cycles improves the throughput of a substrate processing apparatus or a substrate processing system, respectively. In light of the above, an improved deposition apparatus, an improved processing system, an improved method of maintaining a deposition apparatus for display manufacturing, and an improved method for manufacturing a layer of an optoelectronic device are beneficial.
SUMMARY
[0008] In light of the above, a deposition apparatus, a substrate processing system, a method of maintaining a deposition apparatus and a method of manufacturing a layer of an opto-electronic device according to the independent claims are provided. Further features, details, aspects, implementation and embodiments are shown in the dependent claims, the description and the drawings.
[0009] According to one embodiment, a deposition apparatus for large area substrate processing in a substrate processing system is provided. The deposition apparatus includes a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly provided within the source frame segment; a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to move the substrate support towards the source frame segment or the upper lid assembly, wherein the substrate handling segment comprises: one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and a bottom lid assembly detachable from the one or more side walls.
[0010] According to one embodiment, a deposition apparatus for large area substrate processing in a substrate processing system is provided. The deposition apparatus includes a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly comprising: a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode; and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment of the vacuum chamber; the deposition apparatus further comprising: a substrate support within the substrate handling segment; and an actuator coupled to the substrate support towards the source frame segment or the upper lid assembly.
[0011] According to one embodiment, a substrate processing system for a large area substrate is provided. The substrate processing system includes a transfer chamber; one or more deposition apparatuses according to embodiments of the present disclosure coupled to the transfer chamber; and one or more load lock chambers coupled to the transfer chamber.
[0012] According to one embodiment, a method of maintaining a deposition apparatus for large area substrate processing, the deposition apparatus having a vacuum chamber with a first slit opening facing a transfer chamber is provided. The method includes moving a substrate mask and at least one shielding towards a side of the vacuum chamber opposite the first slit opening; conducting maintenance of the substrate mask and the at least one shielding; and moving the substrate mask and the at least one shielding towards the first slit opening.
[0013] According to one embodiment, a method of manufacturing a layer of an optoelectronic device is provided. The method includes loading a large area substrate on a robot arm of a robot at least partially disposed in a central transfer chamber; transferring the large area substrate into a deposition apparatus according to any of embodiments described herein and sputtering a layer of material on the large area substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of the scope, for the disclosure may admit to other equally effective embodiments.
[0015] FIG. 1 schematically shows a processing system having at least a deposition apparatus for horizontal sputtering from rotatable, cylindrical targets or cathodes according to embodiments of the present disclosure;
[0016] FIG. 2 shows a schematic sectional view of a deposition apparatus including an array of horizontal sputter cathodes according to embodiments described herein;
[0017] FIG. 3 shows a schematic sectional view of a deposition apparatus including an array of horizontal sputter cathodes according to embodiments described herein;
[0018] FIG. 4 schematically shows a perspective view of a processing system containing at least a deposition apparatus for horizontal sputtering from rotatable, cylindrical targets according to embodiments of the present disclosure;
[0019] FIG. 5 shows a portion of a deposition apparatus according to embodiments of the present disclosure illustrating cathode drive units and corresponding power supplies;
[0020] FIG. 6 shows a schematic view of a deposition apparatus including a vacuum chamber having three segments according to embodiments of the present disclosure;
[0021] FIGS. 7A and 7B show schematic side views of a deposition apparatus and illustrate concepts of maintenance according to embodiments of the present disclosure;
[0022] FIGS. 8 A and 8B show schematic side views of a deposition apparatus and illustrate concepts of maintenance according to embodiments of the present disclosure; and [0023] FIG. 9 shows a flow chart illustrating methods of maintaining a deposition apparatus for large area substrate processing according to embodiments of the present disclosure. DETAILED DESCRIPTION OF EMBODIMENTS
[0024] Reference will now be made in detail to the various embodiments of the disclosure, some examples of which are illustrated in the figures.
[0025] Embodiments of the present disclosure relate to a substrate processing system for a large area substrate. Particularly, the substrate processing system can be a cluster processing system with deposition apparatuses according to embodiments of the present disclosure, wherein the deposition apparatuses include an array of cylindrical sputter cathodes for deposition in a horizontal substrate orientation. The cylindrical sputter cathodes may also be referred to as rotatable sputter cathodes, wherein a cylindrical target is rotated around an axis to improve material utilization. According to embodiments of the present disclosure a horizontal orientation is to be understood to distinguish from a vertical orientation. A horizontal orientation of slit opening, of a substrate, of a sputter cathode, or of a sputter cathode array is understood to be horizontal +- 20°.
[0026] Embodiments further relate to a deposition apparatus with a horizontal array of sputter cathodes, particularly rotatable sputter cathodes having, for example, cylindrical targets. The array of sputter cathodes may sputter down on a substrate in a stationary deposition process. The array of sputter cathodes may be disposed above a substrate on which a material layer is deposited.
[0027] Embodiments may further relate to deposition apparatuses with an improved maintenance concept and methods of maintaining deposition apparatuses, particularly in a substrate processing system for large area substrates. Yet further, additionally or alternatively, embodiments may relate to methods of manufacturing a layer of an optoelectronic device with a deposition apparatus having a sputter cathode array depositing material on a horizontally oriented substrate. [0028] For static deposition, an array of rotatable cathodes having cylindrical targets may be utilized. Rotatable cathodes having cylindrical targets can be beneficial due to the improved material utilization of the target. The improved material utilization may result in a maintenance cycle for target exchange that is comparably long. Even though long maintenance cycles are beneficial, a longer maintenance cycle of a cylindrical target and maintenance of other components having a shorter maintenance cycle may conflict. To take advantage of the longer maintenance cycles of target exchange while enabling shorter maintenance cycles for other components, a deposition apparatus and/or a processing system and improve maintenance concept according to embodiments of the present disclosure is beneficial. Further, easy and convenient access to components for maintenance may reduce the cost of ownership, particularly in light of the ergonomic access for maintenance.
[0029] FIG. 1 shows a substrate processing system 100. The substrate processing system 100 can be a cluster system having a transfer chamber 120. The transfer chamber 120 can be a central transfer chamber. A robot 122 can at least be partially disposed within the transfer chamber 120. The robot 122 can have a robot arm 154. The robot 122 can transfer substrates between the chambers coupled to the transfer chamber 120. At least one load lock chamber 105 can be coupled to the transfer chamber 120. FIG. 1 shows two load lock chambers 105 coupled to the transfer chamber 120. One or more deposition apparatuses 110 can be coupled to the transfer chamber 120. The robot 122 can transfer the substrate between a load lock chamber and a deposition chamber and vice versa or between different deposition chambers attached to the transfer chamber 120.
[0030] A deposition apparatus 110 includes a vacuum chamber. Further, the transfer chamber 120 can be a vacuum transfer chamber. Accordingly, a substrate can be handled under vacuum from the load lock chamber to the transfer chamber, from the transfer chamber to a vacuum chamber of a deposition apparatus 110 and from a vacuum chamber of the first deposition apparatus to a vacuum chamber of a further deposition apparatus.
[0031] The apparatuses and systems described herein are configured in order to move and process large area substrates that may in particular have a surface of 1 m2 or above. The term “substrate” may particularly embrace substrates like glass substrates, for example, a glass plate. Further, a substrate may include wafers, slices of transparent crystal such as sapphire or the like. However, the term “substrate” may embrace other substrates that can be inflexible or flexible, like e.g. a foil or a web. The substrate may be formed by any material suitable for material deposition.
[0032] FIG. 1 schematically shows a substrate processing system 100 including one or more deposition apparatuses 110 according to the present disclosure. The one or more deposition apparatuses 110 are intended for the deposition of material on a substrate and include a vacuum chamber and/or a sputter source area according to embodiments of the present disclosure. An array of deposition sources configured to deposit material on the substrate at a processing area in a horizontal orientation can be provided. The substrate processing system 100 further includes a transfer chamber 120, particularly a vacuum transfer chamber coupled to the one or more deposition apparatuses.
[0033] FIG. 1 further shows load lock chambers 105. The vacuum transfer chamber 120 is coupled to the one or more deposition apparatuses. The vacuum transfer chamber can move substrates to the one or more vacuum chambers through openings, particularly horizontal slit openings.
[0034] In some embodiments, the substrate processing system 100 may include one or more support chambers arranged to perform specific additional functions like storage of substrates. The processing system may include one or more load lock chambers 105 that are configured to receive a substrate under atmospheric pressure or not under vacuum conditions A and then to transfer the substrate into the vacuum transfer chamber under vacuum conditions V. Vice versa, the load chamber may also receive a substrate from the transfer chamber under a vacuum condition V and provide said substrate under atmospheric pressure or not under vacuum conditions A.
[0035] When the substrate is transferred to or present in the vacuum transfer chamber 120 of a substrate processing system 100, a mechanism, such as a robot, is configured to transfer the substrate to vacuum chambers adjacent to the vacuum transfer chamber 120, e.g. for processing. The substrate is transferred from the vacuum transfer chamber 120 to vacuum chambers 210 and/or to other support chambers (not shown) through openings with a robot 122 or the like. [0036] In the operating conditions of a substrate processing system 100, a vacuum condition V is maintained inside the substrate processing system 100 with the exception of load lock chambers 105, wherein a change from vacuum conditions V to atmospheric conditions or non-vacuum conditions A and vice versa is possible in order to insert and/or remove the substrate before or after processing without affecting the vacuum V in other parts of the substrate processing system 100 and in particular in the vacuum chambers, in the vacuum transfer chamber 120 and/or in the support chambers of the substrate processing system 100.
[0037] For transfer between the transfer chamber 120 and the adjacent vacuum chambers, for example, vacuum chambers of a load lock chamber 105 or vacuum chambers of a deposition apparatus 110, slit openings, particularly horizontal slit openings can be provided in the transfer chamber and the adjacent vacuum chambers. As exemplarily shown in FIG. 1, maintenance area 115 is provided on one side of the deposition apparatus 110. The maintenance area is on a side of the deposition apparatus opposite the slit opening facing the transfer chamber 120. Accordingly, the maintenance area 115 can be provided radially outward from the central transfer chamber. Transport path 130, for example, rails, guiding rails, guiding paths, can be provided from a first position at a deposition apparatus 110 to the second position at the maintenance area 115. One or more components of the deposition apparatus 110 can be moved along the transport path 130 between the deposition apparatus 110 and the maintenance area 115. As indicated by dotted circle 102, the substrate processing system 100 can have a footprint for manufacturing within the circle. Further, as indicated by the dotted circle 104, the surrounding area for maintenance can be provided between the dotted circle 102 and the dotted circle 104.
[0038] According to an embodiment, a substrate processing system for a large area substrate is provided. The substrate processing system includes a transfer chamber and one or more deposition apparatuses according to embodiments of the present disclosure. The one or more deposition apparatuses are coupled to the transfer chamber. Further, one or more load lock chambers are coupled to the transfer chamber. According to some embodiments, which can be combined with other embodiments described herein, the transfer chamber has a rectangular, a pentagonal or a hexagonal shape. According to some embodiments, the transfer chamber can be a central transfer chamber. Further, the transfer chamber can have a longitudinal layout as compared to a concentric layout shown in the figures. For example, the transfer chamber has 2 or more horizontal slit openings, particularly 4 or more horizontal slit openings. According to some embodiments, the processing apparatus may further include a robot disposed at least partially with the transfer chamber, the robot having a robot arm being movable into an adjacent chamber.
[0039] According to yet further embodiments, one or more further processing chambers may be coupled to the vacuum transfer chamber, for example, a central transfer chamber. Specifically, the one or more further processing chambers may be selected from a heating chamber coupled to the transfer chamber, a cooling chamber coupled to the transfer chamber, a pre-cleaning chamber coupled to the transfer chamber, a storage chamber coupled to the transfer chamber, an examination chamber coupled to the transfer chamber, and a CVD chamber coupled to the transfer chamber. One or more of the above chambers, of the same type and/or different type may be coupled to a central transfer chamber. The examination chamber may, for example, measure the thickness of a layer deposited in a previous deposition process or may control one or more layer thicknesses before the substrate is unloaded from a processing system. A control of layer thickness can be provided. The cleaning or precleaning chamber may remove oxides from, for example, metal layers, or may remove photoresist residuals from a previous manufacturing operation.
[0040] For the manufacturing of various applications, at least a first deposition apparatus according to embodiments of the present disclosure and a second deposition apparatus according to embodiments of the present disclosure can be provided. A cluster processing system allows for flexible adaptation of various processes by having different processing systems and by the ability to move flexibly between different deposition apparatuses. For example, multiple metal deposition apparatuses can be provided. The metals can be the same metal or can be different metals. For example, deposition apparatuses depositing the same metal may be utilized to increase the layer thickness of a specific material layer while maintaining the tech time of the processing system. Further, additionally or alternatively, different processes may be provided in different deposition apparatuses, i.e. production modules. For example, the different processes may include reactive sputter processes and/or non-reactive sputter processes. [0041] According to some embodiments, which can be combined with other embodiments described herein, a first deposition apparatus and a second deposition apparatus are configured to deposit a layer of a first metal in both the first deposition apparatus and the second deposition apparatus, to deposit a layer of a first metal and a layer of a second metal, to deposit layers with two reactive process, to deposit layers with two non-reactive processes, or to deposit layers with a reactive process and a non-reactive process.
[0042] FIG. 2 shows a deposition apparatus 110. The deposition apparatus 110 includes a vacuum chamber 210. According to embodiments of the present disclosure, the vacuum chamber 210 can include three segments. The three segments can be defined by the functionality of the segments, i.e. some segments or a portion of the segment and an adjacent segment may be fixedly connected or integrally formed. Separating the vacuum chamber into segments allows for reduced cost of ownership. Particularly, maintenance of a deposition apparatus can be improved by segmentation according to embodiments of the present disclosure.
[0043] The vacuum chamber 210 as exemplarily shown in FIG. 2 includes a source frame segment 212. The source frame segment can be a fixed segment that is at a fixed position relative to the processing system, for example, relative to the central transfer chamber. The source frame segment is configured to support the source assembly and/or a source support assembly, respectively. As shown in FIG. 2, a plurality of sputter cathodes 250 and a plurality of anodes 252 are provided in the source frame segment. Alternatively, one or more other sources may be provided and/or supported by a source support assembly.
[0044] An upper lid assembly 214 is provided over the source frame segment 212. The upper lid assembly 214 can be removed from the source frame segment, for example, for maintaining components disposed in the upper lid assembly and/or for maintaining components of the source assembly or the source support assembly.
[0045] A substrate handling segment 216 is provided below the source frame segment. The substrate handling segment 216 includes or houses components for substrate handling, substrate alignment, substrate masking, substrate support, or the like. The substrate handling segment has a first horizontal slit opening configured to load and unload substrates into the vacuum chamber 210. The first horizontal slit opening faces the transfer chamber 120 shown in FIG. 1. The first horizontal slit opening beam is at a first side of the substrate handling segment.
[0046] The substrate handling segment 216 may have an upper portion and a lower portion, wherein the lower portion may include a bottom lid assembly. The upper portion of the substrate handling segment 216 includes the first horizontal slit opening. According to some embodiments, which can be combined with other embodiments described herein, the upper portion of the substrate handling segment 216 is fixedly coupled to the source frame segment or integrally formed with the source frame segment 212. Accordingly, the first horizontal slit opening is at a predetermined position relative to the source assembly. Additionally or alternatively, the first horizontal slit opening remains at a predetermined position relative to the source assembly.
[0047] As shown in FIG. 2, the vacuum chamber 210 can be supported by a pedestal 218. The pedestal 218 can include a base frame or three or more stands. Particularly, the pedestal may support at least the source frame segment 212.
[0048] According to some embodiments, a deposition apparatus for large area substrate processing in a cluster processing system is provided. The deposition apparatus includes a vacuum chamber. The vacuum chamber includes a source frame segment, an upper lid assembly over the source frame segment and detachable from the source frame segment, and a substrate handling segment below the source frame segment. The substrate handling segment has a first horizontal slit opening configured to load and unload a substrate, wherein the first horizontal slit opening is at a first side of the substrate handling segment. The deposition apparatus includes a source support assembly. For the example of an array of sputter sources, the source support assembly includes a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment of the vacuum chamber. The deposition apparatus further includes a substrate support within the substrate handling segment and an actuator coupled to the substrate support to vertically move the substrate support.
[0049] FIG. 2 shows the substrate support body 220 and the actuator 222 coupled to the substrate support body 220. The actuator 222 can be a linear actuator or drive configured to move the substrate support body 220 vertically. For example, FIG. 2 shows the substrate support body 220 in a first position below the upper ends of the substrate support pins 320. The actuator 222 may move the support body 220, to a second position, i.e. an upper position, wherein the substrate support body is positioned above the upper ends of the substrate support pins 320. The substrate disposed on the substrate support pins 320 will be contacted by the substrate support body upon movement of the substrate support body from the first position to the second position. Accordingly, the substrate can be disposed on the substrate support body for material deposition by lifting the substrate support body from the first position to the second position. Further, the substrate can be disposed on the substrate support pins 320, for example, after the position, by lowering the substrate support body holding the substrate from the second position to the first position.
[0050] The support body 220 acts as a table to support the substrate during deposition of a material layer on the substrate. If the table is moved to the upper position, i.e. the second position, the substrate can be disposed below the edge exclusion mask 230. The small edge at the perimeter of the substrate, for example, an edge of up to a few millimeters is covered by the edge exclusion mask during material deposition. The edge of the substrate is not covered with the deposition material. The edge exclusion mask 230 provides an edge exclusion on the table supporting the substrate. The edge exclusion mask 230 can be coupled with an edge exclusion support frame to the substrate handling segment 216 of the vacuum chamber 210.
[0051] According to some embodiments, which can be combined with other embodiments described herein, one or more shieldings can be provided within the vacuum chamber 210. The shieldings within the vacuum chamber reduce or prevent coating of interior surfaces of the vacuum chamber 210 or the deposition apparatus 110 with the coating material during operation of the deposition sources. FIG. 2 shows side protection shields 242. The side protection shields can be provided within the source frame segment. Further, the side protection shields may extend upward into the upper lid assembly 214 and may extend downward into the substrate handling segment 216. The side protection shields may further be provided by several pieces, which are attached to each other. Having smaller pieces may allow for easier maintenance of the side protection shields. Maintenance of the side protection shields may include cleaning of the side protection shields after a predetermined amount of deposition material has accumulated on the side protection shields.
[0052] FIG. 2 further shows a pre-sputter shield 244. The pre-sputter shield 244 can be provided in the upper lid assembly 214. The pre-sputter shield may be coated with deposition material if a sputter cathode 250 is operated with a magnetron facing upwardly in FIG. 2, i.e. for cleaning of the target of the cathode. The pre-sputter shield 244 may additionally or alternatively protect surfaces of the upper lid assembly 214 from spray coating of molecules of the deposition material.
[0053] FIG. 2 shows an array of sputter cathodes 250. The sputter cathodes 250 are rotatable sputter cathodes having a cylindrical target. The sputter cathodes 250 extend along a rotation axis, which is perpendicular to the paper plane of FIG. 2. The cross- section of the array sputter cathodes shown in FIG. 2 are provided along one line, i.e. a horizontal line in FIG. 2. The sputter cathodes of the area of sputter cathodes are provided at the same height. The surfaces of the sputter cathodes or the rotation axis of the sputter cathode, respectively form a plane, particularly a plane essentially parallel to the support body 220. Similar to the sputter cathodes, also the anodes can be provided at the same height. FIG. 2 shows the area of anodes at the same height as the area of cathodes. Alternatively, the area of anodes may be provided at a different height as compared to the array of cathodes. For example, the plane defined by the area of anodes can be at the plane defined by the array of cathodes, can be between the plane defined by the array of cathodes and the upper lid assembly 214, or can be between the plane defined by the array of cathodes and the support body.
[0054] FIG. 3 further shows a deposition apparatus similar to the deposition apparatus shown in FIG. 2. Features, details, implementations and embodiments described with respect to FIG. 2 may similarly be applicable to the embodiments described with respect to FIG. 3. In FIG. 3, the source assembly may deviate from the embodiments described with respect to FIG. 2, in that the source assembly or a corresponding source support assembly includes a first group of rotatable sputter cathodes 250, which are provided at a first height in the deposition apparatus and a second group of rotatable sputter cathodes 350, which are provided at a second height in the deposition apparatus. The second group of rotatable cathodes may particularly include a first rotatable sputter cathode 350 at the first edge or border of the array of sputter cathodes and a second rotatable sputter cathode 350 at a second, opposing edge or border of the array of sputter cathodes. The second group of rotatable cathodes can be provided at a lower height as compared to the first group of rotatable cathodes. Similarly, cathode drive units and corresponding bearings to support the rotatable sputter cathode may be provided at a lower height for the second group of rotatable cathodes as compared to the first group of rotatable cathodes.
[0055] According to some embodiments, which can be combined with other embodiments described herein, the source assembly may be provided on a curved surface. Particularly, cathode drive units or sputter cathodes at an edge or border of the array may be provided closer to the substrate support. Anodes 352 at an edge or border of the source assembly may be provided at a lower height and, for example, closer to the substrate support body. The curved surface may include a straight portion at a center of the sputter cathode array and may include a bent portion at opposite ends of the sputter cathode array. Further, the curved surface may be bowed such that a center sputter cathode is further distant from the support body 220 as compared to an outer sputter cathode.
[0056] According to some embodiments, which can be combined with other embodiments described herein, a first group of cathode drive units is at a different height to a second group of cathode drive units. Further, additionally or alternatively, and as exemplarily illustrated in FIGS. 4 and 5, the first group of cathode drive units is provided at a side of the source frame segment opposite the first side of the substrate handling segment. According to some embodiments, the source support assembly may further include a first group of cathode bearings opposite the first group of cathode drive units. According to yet further implementations, which can be combined with other embodiments of the present disclosure, the source support assembly includes a plurality of anodes. [0057] According to some embodiments, which can be combined with other embodiments described herein, the source frame segment may support a deposition source, e.g. a sputter source. The one or more sources can be provided in an array or in another pattern. The upper lid assembly may include one or more gas passages for process gases. Additionally or alternatively, the substrate support body is movable in an essentially vertical direction and in horizontal directions. For example, the process can be measured in situ and/or the process conditions can be controlled in order to provided the layer properties according to the process specifications.
[0058] FIG. 3 shows further details regarding the vacuum chamber, which may be combined with other embodiments described herein. The substrate handling segment 216 of the vacuum chamber 210 includes an upper portion that is fixedly coupled or integrally formed with the source frame segment 212 of the vacuum chamber. A lower lid assembly 318 is removably coupled to the vacuum chamber 210, for example, at a flange 316 of the substrate handling segment 216 of the vacuum chamber 210. As described in more detail below, having the lower lid assembly detachably coupled to an upper portion of the substrate handling segment, the vacuum chamber in general allows for improved maintenance concept.
[0059] According to some embodiments, which can be combined with other embodiments described herein, one or more flanges 310 to be connected to a vacuum pump (see vacuum pump 810 in FIG. 8A) are provided at the fixed portion of the substrate handling segment of the vacuum chamber. Particularly, the one or more flanges can be coupled to the side wall of the substrate handling segment of the vacuum chamber. Accordingly, a vacuum pump is provided at a side wall of the vacuum chamber 210. The vacuum chamber is not provided below the deposition source array, the substrate, or the substrate support body. Providing the vacuum pumps at a side increases the maintenance cycle for the vacuum pumps and provides a better separation of components according to their maintenance cycles, which is described in more detail below.
[0060] Embodiments of the present disclosure relate to static deposition as compared to dynamic deposition, wherein for dynamic deposition the substrate is continuously moved past a deposition source, for example, a line source. [0061] Embodiments described herein particularly relate to deposition of materials, e.g. for display manufacturing on large area substrates. According to some embodiments, large area substrates or carriers supporting one or more substrates may have a size of at least 0.5 m2. For instance, the deposition system may be adapted for processing large area substrates, such as substrates of GEN 5, which corresponds to about 1.4 m2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. According to yet further implementations, half sizes of the above- mentioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers may be processed and coated in deposition systems according to the present disclosure.
[0062] According to embodiments described herein, the methods provide a sputter deposition for a positioning of the substrate for a static deposition process. Typically, particularly for large area substrate processing, such as processing of horizontally oriented large area substrates, it can be distinguished between static deposition and dynamic deposition. A dynamic sputtering, i.e. an inline process where the substrate moves continuously or quasi-continuously adjacent to the deposition source, would be easier due to the fact that the process can be stabilized prior to the substrates moving into a deposition area, and then held constant as substrates pass by the deposition source. Mura that may occur based on a distinct position of neighboring sputter cathodes is avoided by the continuous or quasi-continuous movement of the substrate. Yet, a dynamic deposition can have other disadvantages, e.g. particle generation. This might particularly apply for TFT backplane deposition. It should be noted that the term static deposition process, which is different as compared to dynamic deposition processes, does not exclude any movement of the substrate as would be appreciated by a skilled person. A static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is essentially constant during deposition, a dithering substrate position during deposition, and/or a wobbling substrate position during deposition. A static deposition process may further be a deposition process for which the cathodes are provided in one chamber, i.e. a predetermined set of cathodes provided in the chamber, a substrate position wherein the deposition chamber has a sealed atmosphere with respect to neighboring chambers, for example, a central transfer chamber, e.g. by closing valve units separating the chamber from an adjacent chamber, during deposition of the layer. Accordingly, a static deposition process can be understood as a deposition process with a static position, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate. A static deposition process, as described herein, can be clearly distinguished from a dynamic deposition process without the necessity that the substrate position for the static deposition process is without any movement during deposition.
[0063] In order to reduce or avoid mura based on predetermined distances between the rotatable sputter cathodes 250 in FIG. 2 or the distances between the rotatable sputter cathodes 250 and the sputter cathodes 350 in FIG. 3, one or more of the following concepts can be provided. The support body 220 providing a support table during layer deposition on the substrate may be coupled to an actuator to be moved horizontally, i.e. in a left-right-direction in FIGS. 2 and 3. The support body 220 providing the support table during layer deposition on the substrate can be moved vertically up and down during layer deposition of the material on the substrate. The actuator 222 may be utilized for such a vertical movement. The edge exclusion mask 230 may be moved together with the substrate for vertical movement during layer deposition. The movements of the support body may be combined and may additionally or alternatively be provided back and forth. The movement, particularly in a horizontal direction, may correspond to a sputter cathode distance or may be smaller than a sputter cathode distance, e.g. half of the sputter cathode distance. Various types of movement of the substrate or substrate support may be referred to as substrate wobbling herein.
[0064] The array of sputter cathodes may be moved horizontally, i.e. in the left right direction in FIGS. 2 and 3. For example, the area of sputter cathodes may be moved relative to the source frame segment 212 of the vacuum chamber 210. The array of sputter cathodes may be moved vertically up and down during layer deposition. The various types of movement of the cathode array (or individual cathodes relative to the source frame segment) may be referred to as deposition array wobbling herein. The horizontal and vertical movements described above may be combined with each other. Substrate wobbling and deposition array wobbling may both be provided. Movement of the substrate and the array of sputter cathodes relative to each other can increase the uniformity of the deposited layer and may reduce or avoid mura.
[0065] According to yet further embodiments, which can be combined with other embodiments described herein, a magnetron within each of the rotatable sputter cathodes may be moved by an angle from a first position, e.g. a left position in FIGS. 2 and 3, to a second position, for example, a right position in FIGS. 2 and 3, and particularly a through a center position with a magnetron orientation perpendicular to the support body surface. The magnetron movement can be provided back and forth and may be referred to as magnetron wobbling. The first position may be a first end position of the angular movement and the second position may be a second end position of the angular movement on an opposing side of the center position. According to some embodiments, which can be combined with other embodiments described herein, the movement can be back and forth between the first position and the second position, wherein the magnetron is continuously moved with the exception of the turnaround positions, i.e. the two end positions. According to other embodiments, which can be combined with the embodiments described herein, the magnetron can be moved to the first position and stopped at the first position. Thereafter, the magnetron may be moved to the second position and stopped at the second position. Material deposition may occur at the first position and the second position. Material deposition may be stopped while moving from the first position to the second position or vice versa. According to yet further implementations, particularly for continuous magnetron movement, the number of cycles of moving from the first position to the second position or the number of cycles of moving from the second position to the first position may be synchronized with the deposition time for depositing one layer on the substrate. For example, the number of cycles and the speed of movement may be chosen such that the time period for one cycle multiplied with an integer n or two times an integer n equals the deposition time.
[0066] According to yet further embodiments, different modes of substrate wobbling, deposition array wobbling and/or magnetron wobbling can be combined.
[0067] According to some embodiments, which can be combined with other embodiments described herein, the source support assembly includes a first group of magnetron drive units, each magnetron drive unit configured to move a magnetron by an angle within the horizontal cylindrical sputter cathode.
[0068] FIGS. 4 and 5 illustrate a deposition apparatus and a portion of a central transfer chamber according to some embodiments of the present disclosure. The central transfer chamber (see also FIG. 1) includes four or more sidewalls 420, for example, 6 sidewalls as shown in FIG. 4. Each of the sidewalls may have a horizontal slit opening 422. FIG. 2 illustrates a robot arm 154 being partially inserted in the vacuum chamber of a deposition apparatus through a horizontal slit opening 416 of the vacuum chamber of the deposition apparatus. The vacuum chamber of the deposition apparatus includes a source frame segment 212, an upper lid assembly 214 and a substrate handling segment 216. A dashed line shows the separation between the functional portion supporting the deposition source assembly, i.e. the source frame segment and the functional portion supporting components for substrate handling, substrate alignment, substrate support, substrate masking, or the like.
[0069] As shown in FIG. 5, cathode drive units 540 can be coupled to the source frame segment 212 and may be operatively coupled to a rotatable sputter cathode for rotation of the cylindrical target. A cathode drive cabinet 440 may be provided adjacent to the source frame segment 212 of the vacuum chamber 210. Particularly, the cathode drive cabinet 440 may be provided at the side of the vacuum chamber opposite the horizontal slit opening 416. Further, a supply cabinet 430 can be provided above the cathode drive cabinet. The supply cabinet 430 and the cathode drive cabinet 440 may also be combined with each other. The supply cabinet 430 may include, for example, power supplies 530, for providing power to the rotatable sputter cathodes 250.
[0070] According to some embodiments, the deposition apparatus may include one or more power supplies selected from the group consisting of or including a DC power supply, a pulsed DC power supply and a bipolar pulsed power supply.
[0071] The supply cabinet 430 may further include cooling units for cooling fluid for the sputter cathodes or other electrical elements for the operation of the deposition apparatus. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the cathode drive cabinet and the supply cabinet can be provided at a side of the vacuum chamber opposite the central transfer chamber. Accordingly, easy access from the maintenance area 115 (see FIG. 1) can be provided.
[0072] FIG. 4 shows the pedestal 218, on which the vacuum chamber of the deposition apparatus is provided. According to some embodiments, which can be combined with other embodiments described herein, the lower lid assembly 318 is provided on the movable pedestal 418. The movable pedestal 418 can be moved, particularly together with the lower lid assembly 318, along the transport path 130. The movable pedestal can be moved in the maintenance area 115 (see FIG. 1). FIG. 4 shows the support body 220 supported by the lower lid assembly 318. According to some embodiments, which can be combined with other embodiments described herein, a plurality of components can be supported by the lower lid assembly 318. Accordingly, upon moving the movable pedestal 418 along the transport path 130, the components supported by the lower lid assembly 318 are moved in the maintenance area 115. Improved maintenance can be provided.
[0073] The movable pedestal and particularly the combination of the movable pedestal 418 with the lower lid assembly 318 can be moved similarly to a drawer and may include a plurality of shieldings, the edge exclusion mask 230, the support body 220, i.e. the support table for the substrate, the plurality of lift pins, the actuator 222 configured to move the support body, or the like.
[0074] FIG. 6 shows a schematic view of a deposition apparatus illustrating a yet further embodiment. The pedestal 218 supports a portion of the vacuum chamber of the deposition apparatus. An upper lid assembly 214 is provided on a source frame segment of the vacuum chamber. The pre-sputter shields are provided by first pre-sputter shield 644 and second pre-sputter shield 642. The first pre-sputter shield 644 and the second pre-sputter shield 642 are separated from each other to provide a gas inlet passage for processing as for the sputtering process. A first group of sputter cathodes 250 and a second group of sputter cathode 350 are shown in FIG. 6. A horizontal slit opening 416 is schematically shown and a substrate 650 is provided on substrate support pins 320. Upon movement of the support body 220 by the actuator 222, the substrate 650 is moved towards the sputter cathodes and towards the edge exclusion mask 230. [0075] FIG. 6 further shows alignment actuator 620. The alignment actuator 620 can move the substrate 650 horizontally while being supported on the substrate support pins. Accordingly, the substrate 650 can be aligned relative to the support body 220. Alignment of the substrate relative to the support body 220 provides the substrate at a predetermined position such that the edge exclusion mask 230 masks a predetermined portion of the substrate during layer manufacturing.
[0076] According to some embodiments, a deposition apparatus as disclosed herein may further include a substrate mask within the substrate handling segment and at least one shielding within the substrate handling segment. A maintenance area is provided on a second side of the substrate handling segment opposite the first side of the substrate handling segment, i.e. the side of the substrate handling segment including the horizontal slit opening, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding. As described above, the components may be provided to the maintenance area by movement of the movable pedestal 418 shown in FIG. 6. Alternatively, the components may be provided to the maintenance area by movement of the cart 710 shown in FIGS. 7 A and 7B.
[0077] Embodiments of the present disclosure provide a deposition apparatus with an array of rotatable sputter cathodes, particularly rotatable sputter cathodes having cylindrical targets. The deposition apparatus is configured for static deposition.
[0078] Yet further, additionally or alternatively, embodiments relate to an improved deposition apparatus having an improved maintenance concept. The improved maintenance concept considers functional segments of a vacuum chamber of the deposition apparatus. The functional segments correlate two different maintenance cycles of components within the segments. Accordingly, one access route is provided for components with short maintenance cycles. At least one different access route is provided for components with longer maintenance cycles. Accordingly, the overall maintenance concept is improved.
[0079] FIGS. 7A and 7B illustrate different side views of a deposition apparatus and illustrate an option for the improved maintenance concept. The vacuum chamber includes a source frame segment 212 for supporting the deposition sources, for example, an array of rotatable sputter cathodes 250. Further, the source frame segment 212 supports corresponding cathode drive units 540. The upper lid assembly 240 is detachably provided adjacent to the source frame segment 212. A substrate handling segment 216 is provided below the source frame segment 212. A horizontal slit opening is provided in the substrate handling segment. In the embodiments described with respect to FIGS. 7A and 7B, a maintenance slit opening is provided at a side of the substrate handling segment 216 that is opposite the horizontal slit opening 416 for loading and unloading of the substrate. An arm or handler of a cart 710 can be inserted into the portion of the vacuum chamber corresponding to the substrate handling segment 216 and may couple to one or more of the components provided in the substrate handling segment. These components may include the edge exclusion mask, mask shields, or the like. Further, a support body or other components may be coupled to the arm or handler of the cart 710. After a corresponding vertical movement of the arm or handler of the cart, the components can be removed from the vacuum chamber and transported by the cart 710 along the transport path in the maintenance area 115. FIGS. 7A and 7B illustrate the support body 220 and the actuator coupled to the support body in a lower position such that the substrate support pins extend above the surface of the support body. Additionally, FIGS. 7A and 7B show the support body 220’ in the upper position. It is to be understood that this is the same support body at different times during operation, i.e. in a first position (lower position) and a second position (upper position).
[0080] FIGS. 8 A and 8B illustrate different side views of a deposition apparatus and illustrate a further option for the improved maintenance concept. FIGS. 8 A and 8B correspond to some of the details previously described with respect to FIG. 6, wherein repetition of the description is avoided. The vacuum chamber includes the source frame segment 212 and an upper lid assembly 214 detachably connected to the source frame segment. The lower lid assembly is detachably coupled to an upper portion of the substrate handling segment 216. A plurality of components such as the support body, i.e. the substrate table, alignment actuators, substrate support pins and one or more shieldings are coupled to the lower lid assembly. The components can be moved with the movable pedestal 418 into the maintenance area 115. For example, the movable pedestal 418 can have a base frame with rollers 818 or the like.
[0081] According to some embodiments, which can be combined with other embodiments described herein, the substrate handling segment can be fixedly coupled to the source frame segment or is integrally formed with the source frame segment and wherein the substrate handling segment has a second horizontal slit opening to insert an arm of a maintenance cart, the second horizontal slit opening being at the second side of the substrate handling segment. This is for example shown in FIGS. 7 A and 7B.
[0082] According to some embodiments, which can be combined with other embodiments described herein, the substrate handling may include one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment and a bottom lid assembly detachable from the one or more side walls. The bottom lid can be movable into the maintenance area. For example, the bottom lid assembly can include a transport unit, such as a movable pedestal, configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa. According to yet further embodiments the cart shown in FIG. 7 or the movable bottom lid assembly may also be moved to another maintenance area, which is e.g. more remote as compared to the maintenance area shown in FIG. 1
[0083] According to some embodiments, which can be combined with other embodiments described herein, the transport unit can include a lift function to vertically move the bottom lid assembly. Accordingly, the bottom lid assembly can be vertically moved such that the bottom lid assembly can be lowered from an operation condition, wherein the vacuum chamber is sealed. The components coupled to the bottom lid assembly are lowered together with the bottom lid assembly such that the components can be moved aside vertically towards the maintenance area, i.e. below a lower edge of the side walls of the substrate handling segment.
[0084] The deposition apparatus may further include an alignment system configured to move a substrate relative to the substrate support and a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support. One or more components, particularly four or more components, of the substrate support, the actuator, the substrate mask, the at least one shielding, the alignment system, and the pin array are coupled to the bottom lid assembly to be movable together with the bottom lid assembly upon actuation of the transport unit. [0085] FIGS. 6 to 8B describe the maintenance concept according to embodiments of the present disclosure with respect to a deposition apparatus including rotatable sputter cathodes and/or corresponding cathode drive units. The maintenance concepts and the deposition apparatuses utilizing the maintenance concept according to embodiments of the present disclosure may also be provided for other deposition sources.
[0086] According to one embodiment, a deposition apparatus for large area substrate processing in a processing system is provided. The deposition apparatus includes a vacuum chamber having a source frame segment, an upper lid assembly over the source frame segment and detachable from the source frame segment and a substrate handling segment below the source frame segment, the substrate handling segment having a first horizontal slit opening configured to load and unload a substrate, the first horizontal slit opening being at a first side of the substrate handling segment. The deposition apparatus further includes a source support assembly and/or a source assembly provided within the source frame segment. The deposition apparatus further includes a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to vertically move the substrate support wherein the substrate handling segment includes one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment and a bottom lid assembly detachable from the one or more side walls. According to some embodiments, the bottom lid is movable into the maintenance area. For example, the bottom lid may include a transport unit configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa. Further, the transport unit may have a lift function to vertically move the bottom lid. According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus may further include a substrate mask within the substrate handling segment, and at least one shielding within the substrate handling segment. A maintenance area is disposed on a second side of the substrate handling segment opposite the first side of the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding. According to yet further optional implementations, an alignment system is configured to move a substrate relative to the substrate support and/or a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support. One or more, particularly four or more of the components supported by the lower lid assembly can be moved into the maintenance area together with the lower lid assembly.
[0087] The maintenance concepts and corresponding deposition apparatuses described herein are described with respect to a cluster processing system. Embodiments having a maintenance area next to a deposition apparatus and including a vacuum chamber with a segment according to the present disclosure, wherein a lower lid assembly supports the components having a first maintenance cycle that can be removed from the vacuum chamber into the maintenance area, for example, with the transport unit according to embodiments of the present disclosure, may also be applicable for in-line processing systems.
[0088] FIG. 9 shows a flowchart illustrating a method of maintaining a deposition apparatus, particularly for large area substrate processing. The deposition apparatus includes a vacuum chamber with the first horizontal slit opening facing a transfer chamber. According to operation 902, an edge exclusion mask or a substrate mask, respectively and at least one shielding is moved downward, for example, by moving a lid assembly of the vacuum chamber or by moving an arm of a cart reaching into the vacuum chamber. The substrate mask and the at least one shielding is moved towards the side of the vacuum chamber opposite a first horizontal slit opening, i.e. a slit opening facing the central transfer chamber of a cluster processing system (see operation 904). At operation 906, maintenance of the substrate mask and the at least one shielding is conducted. The substrate mask and the at least one shielding is moved towards the first horizontal slit opening at operation 908. For example, the lower lid assembly may be moved towards the horizontal slit opening and the vacuum chamber of the deposition apparatus may be sealed to be evacuated for further deposition processes.
[0089] According to some embodiments, the substrate mask and the at least one shielding is moved by moving a lower lid assembly of the vacuum chamber. According to some embodiments, which can be combined with other embodiments described herein, one or more of a substrate support and an actuator coupled to the substrate support, an alignment system, and a pin array can be moved together with a bottom lid assembly of the vacuum chamber. The above described maintenance procedures may rely on a comparably short maintenance cycle. Particularly for rotatable sputter cathodes having a cylindrical target, the maintenance cycles of the sputter cathodes may be comparably long.
[0090] According to some embodiments, which can be combined with other embodiments described herein, an upper lid assembly of the vacuum chamber can be removed. The first sputter cathode and/or a first anode can be removed from the top of the vacuum chamber, particularly after removal of the upper lid assembly. Removal of the upper lid assembly provides access to the source frame segment from above.
[0091] After removal of a first sputter cathode and/or a first anode, particularly at one end of the array of sputter cathodes, maintenance can be provided by having personal standing in the vacuum chamber, and particularly standing upright within the source frame segment. According to yet a further optional implementation, a second sputter cathode and/or a second anode at a second opposite end of the array of sputter cathodes may be removed to provide the maintenance access for personal at both ends of the sputter cathodes. A maintenance platform may be installed below the vacuum chamber after the lower lid assembly has been moved. Further sputter cathodes may be disassembled or maintained from the bottom of the vacuum chamber. Maintenance personnel may occupy some of the area that has previously been occupied by the first sputter cathode or the second cathode previously removed from the top of the vacuum chamber.
[0092] According to yet further embodiments, a method of manufacturing a layer of optoelectronic devices is provided. The method includes loading a large area substrate on a robot arm of a robot at least partially disposed in a central transfer chamber. The large area substrate is transferred into a deposition apparatus according to embodiments of the present disclosure and a layer of material is deposited, for example, sputtered on the large area substrate.
[0093] In light of the above, one or more of the following advantages can be provided by embodiments of the present disclosure. An array of rotatable sputter cathodes sputtering down on a substrate can be provided. Access to components of a deposition apparatus can be provided according to the length of the maintenance cycles of the components. Easy access can be provided to a deposition apparatus and maintenance can be improved. [0094] While the foregoing is directed to implementations of the present disclosure, other and further implementations of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A deposition apparatus for large area substrate processing in a substrate processing system, comprising: a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly provided within the source frame segment; a substrate support within the substrate handling segment; and an actuator coupled to the substrate support to move the substrate support towards the source frame segment or the upper lid assembly, wherein the substrate handling segment comprises: one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and a bottom lid assembly detachable from the one or more side walls.
2. The deposition apparatus according to claim 1, wherein the bottom lid is movable into a maintenance area.
3. The deposition apparatus according to claim 2, wherein the bottom lid comprises: a transport unit configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa.
4. The deposition apparatus according to claim 3, wherein the transport unit has a lift function to vertically move the bottom lid.
5. The deposition apparatus according to any of claims 2 to 4, further comprising: a substrate mask within the substrate handling segment; and at least one shielding within the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding, particularly wherein the maintenance area is provided on a second side of the substrate handling segment opposite the first side of the substrate handling segment.
6. The deposition apparatus according to any of claims 1 to 5, further comprising: an alignment system configured to move a substrate relative to the substrate support; and a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support.
7. The deposition apparatus according to any of claims 1 to 6, one or more of the substrate support, the actuator, the substrate mask, the at least one shielding, the alignment system, and the pin array being coupled to the bottom lid assembly to be movable together with the bottom lid assembly upon actuation of the transport unit.
8. A deposition apparatus for large area substrate processing in a substrate processing system, comprising: a vacuum chamber comprising: a source frame segment; an upper lid assembly over the source frame segment and detachable from the source frame segment; and a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; the deposition apparatus further comprising: a source support assembly comprising: a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode; and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment of the vacuum chamber; the deposition apparatus further comprising: a substrate support within the substrate handling segment; and an actuator coupled to the substrate support towards the source frame segment or the upper lid assembly.
9. The deposition apparatus according to claim 8, wherein the first group of cathode drive units is at a different height from the second group of cathode drive units.
10. The deposition apparatus according to any of claims 8 to 9, wherein the first group of cathode drive units is provided at a side of the source frame segment opposite the first side of the substrate handling segment.
11. The deposition apparatus according to claim 10, wherein the source support assembly further comprises: a first group of cathode bearings opposite the first group of cathode drive units.
12. The deposition apparatus according to any of claims 8 to 11, the source support assembly further comprises: a first group of magnetron drive units, each magnetron drive unit configured to move a magnetron by an angle within the horizontal cylindrical sputter cathode.
13. The deposition apparatus according to any of claims 8 to 12, wherein the source support assembly further comprises: a plurality of anodes.
14. The deposition apparatus according to any of claims 8 to 13, further comprising one or more power supplies selected from the group consisting of: a DC power supply; a pulsed DC power supply; and a bipolar pulsed power supply.
15. The deposition apparatus according to any of claims 8 to 14, further comprising: a substrate mask within the substrate handling segment; at least one shielding within the substrate handling segment; and a maintenance area, particularly on a second side of the substrate handling segment opposite the first side of the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shielding.
16. The deposition apparatus according to claim 15, wherein the substrate handling segment is fixedly coupled to the source frame segment or is integrally formed with the source frame segment and wherein the substrate handling segment has a second slit opening to insert an arm of a maintenance cart, the second slit opening being at the second side of the substrate handling segment.
17. The deposition apparatus according to claim 15, wherein the substrate handling segment comprises: one or more side walls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and a bottom lid assembly detachable from the one or more side walls.
18. The deposition apparatus according to claim 17, wherein the bottom lid assembly is movable into the maintenance area.
19. The deposition apparatus according to any of claims 17 to 18, wherein the bottom lid comprises: a transport unit configured to horizontally move the bottom lid between a first position below the source frame segment and a second position in the maintenance area and vice versa.
20. The deposition apparatus according to claim 19, wherein the transport unit has a lift function to vertically move the bottom lid assembly.
21. The deposition apparatus according to any of claims 17 to 20, further comprising: an alignment system configured to move a substrate relative to the substrate support; and a pin array to support the substrate over the substrate support and to transfer the substrate on the substrate support.
22. The deposition apparatus according to any of claims 17 to 21, one or more of the substrate support, the actuator, the substrate mask, the at least one shielding, the alignment system, and the pin array being coupled to the bottom lid assembly to be movable together with the bottom lid assembly upon actuation of the transport unit.
23. The deposition apparatus according to any of claims 17 to 21, four or more of the substrate support, the actuator, the substrate mask, the at least one shielding, the alignment system, and the pin array being coupled to the bottom lid assembly to be movable together with the bottom lid upon actuation of the transport unit.
24. A substrate processing system for a large area substrate, comprising: a transfer chamber; one or more deposition apparatuses according to any of claims 1 to 23 and coupled to the transfer chamber; and one or more load lock chambers coupled to the transfer chamber.
25. The substrate processing system according to claim 24, wherein the transfer chamber has a rectangular, a pentagonal or a hexagonal shape.
26. The substrate processing system according to any of claims 24 to 25, wherein the transfer chamber has 4 or more slit openings.
27. The substrate processing system according to any of claims 24 to 26, further comprising: a robot disposed at least partially with the transfer chamber, the robot having a robot arm being movable into an adjacent chamber.
28. A method of maintaining a deposition apparatus for large area substrate processing, the deposition apparatus having a vacuum chamber with a first slit opening facing a transfer chamber, the method comprising: moving a substrate mask and at least one shielding towards a side of the vacuum chamber opposite the first slit opening; conducting maintenance of the substrate mask and the at least one shielding; and moving the substrate mask and the at least one shielding towards the first slit opening.
29. The method according to claim 28, wherein moving the substrate mask and the at least one shielding is provided by moving a lower lid assembly of the vacuum chamber.
30. The method according to claim 29, further comprising: moving one or more of a substrate support, an actuator coupled to the substrate support, an alignment system, and a pin array together with a bottom lid assembly of the vacuum chamber.
31. The method according to any of claims 28 to 30, further comprising: removing an upper lid assembly of the vacuum chamber from the vacuum chamber; and disassembling a first sputter cathode from the top of the vacuum chamber.
32. The method according to claim 31, further comprising: installing a maintenance platform below the vacuum chamber after the lower lid assembly has been moved; and disassembling further sputter cathodes from the bottom of the vacuum chamber.
33. A method of manufacturing a layer of an optoelectronic device, the method comprising: loading a large area substrate on a robot arm of a robot at least partially disposed in a central transfer chamber; transferring the large area substrate into a deposition apparatus according to any of claims
1 to 23; and sputtering a layer of material on the large area substrate.
PCT/EP2020/065359 2020-06-03 2020-06-03 Deposition apparatus, processing system, method of maintaining a deposition apparatus, and method of manufacturing a layer of an optoelectronic device WO2021244738A1 (en)

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PCT/EP2020/065359 WO2021244738A1 (en) 2020-06-03 2020-06-03 Deposition apparatus, processing system, method of maintaining a deposition apparatus, and method of manufacturing a layer of an optoelectronic device
KR1020227038145A KR20220163422A (en) 2020-06-03 2021-06-02 Deposition Apparatus, Processing System, and Method of Making Layers of Optoelectronic Devices
CN202180036943.8A CN115885057A (en) 2020-06-03 2021-06-02 Deposition apparatus, processing system, and method of fabricating a photovoltaic device layer
PCT/EP2021/064831 WO2021245154A1 (en) 2020-06-03 2021-06-02 Deposition apparatus, processing system, and method of manufacturing a layer of an optoelectronic device

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