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WO2023145440A1 - Method for producing film wire - Google Patents

Method for producing film wire Download PDF

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Publication number
WO2023145440A1
WO2023145440A1 PCT/JP2023/000515 JP2023000515W WO2023145440A1 WO 2023145440 A1 WO2023145440 A1 WO 2023145440A1 JP 2023000515 W JP2023000515 W JP 2023000515W WO 2023145440 A1 WO2023145440 A1 WO 2023145440A1
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WO
WIPO (PCT)
Prior art keywords
film
conductive layer
wiring
coating layer
thickness
Prior art date
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PCT/JP2023/000515
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French (fr)
Japanese (ja)
Inventor
英夫 村田
Original Assignee
株式会社プロテリアル
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社プロテリアル filed Critical 株式会社プロテリアル
Priority to CN202380019573.6A priority Critical patent/CN118661234A/en
Priority to JP2023576759A priority patent/JPWO2023145440A1/ja
Publication of WO2023145440A1 publication Critical patent/WO2023145440A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern

Definitions

  • the present invention relates to a method for manufacturing film wiring.
  • Aluminum-coated wiring which is being considered for weight reduction as mentioned above, requires a space equivalent to the current copper resin coating, so it cannot be used to save space. Although it can be expected to be space-saving, it has the problem of being expensive and susceptible to electromagnetic noise in the space. In addition, there is a limit to the size of flexible printed circuit boards that can be manufactured. Generally, the length of a flexible printed circuit board is only a few centimeters. There is a problem that it is expensive because it is necessary. In addition, since the exterior mainly made of resin has low conductivity, there is also a problem that a new ground wiring (earth wire) is required.
  • the purpose of the present invention is to provide a new electrical wiring that can be manufactured at low cost, meeting the demands for weight reduction and space saving.
  • the present inventors diligently studied various electrical wiring that can replace the covered wiring and achieve light weight and space saving. As a result, the present inventors have found that light-weight, space-saving electric wiring can be obtained at low cost by forming a thin film on a film and separating it into a predetermined size. That is, the present invention separates a film having a base film made of an insulating resin, a conductive layer formed on the upper surface of the base film, and a coating layer formed on the upper surface of the conductive layer into predetermined shapes. It is a manufacturing method of the film wiring used as an electric wiring.
  • the thickness of the conductive layer is 300 nm or more, and the thickness of the coating layer is 10 to 200 nm.
  • the conductive layer and the coating layer are preferably formed by a sputtering method, and the conductive layer preferably has an electrical resistivity of 10 ⁇ cm or less, and is mainly composed of Al, Cu, or Ag.
  • the coating layer is preferably made of a non-magnetic alloy film containing any one of Ti, Cr, Mo and Ni as a main component.
  • the coating layer is preferably an alloy containing Mo as a main component and a total of 60 at % or less of Ni and Ti.
  • the coating layer is preferably an alloy containing Ni as a main component and containing 60 at % or less of Cu, Mn, and Mo in total.
  • film wiring that is lightweight, space-saving, and inexpensive to manufacture, in place of covered wiring that is used for electrical wiring in automobiles, motorcycles, and the like.
  • the film wiring of the present invention is the production of film wiring by forming a conductive layer and a coating layer covering it on a base film to form a film, and then separating it into pieces of a predetermined size to form electric wiring. in the method.
  • the film wiring of the present invention will be described in detail below.
  • the film wiring of the present invention uses a coated wiring in which a copper wire is coated with a resin. It can be applied to applications in which low-current electronic devices are arranged.
  • thin-film wiring has generally been done by using a photo-etching process to create a precise wiring pattern only on the thin film on the substrate. It is used only for expensive products because it needs to be processed using a strong photoresist or chemicals, and then cleaned using an organic solvent or a large amount of pure water. Furthermore, the larger the area, the larger the manufacturing equipment required and the larger the capital investment required. On the other hand, if the covered wiring used in current automobiles etc. is substituted, a precise wiring pattern is not required, and the conductive layer and the covering layer formed on the base film of the present invention are attached together with the base film. By cutting (separating into predetermined shapes) to form wiring, it is possible to manufacture electric wiring at a low cost.
  • the film wiring can be formed by inexpensively forming a conductive layer and a coating layer on a current resin film with a width of several tens of centimeters by using a sputtering method or the like, and then cutting the film into predetermined pieces of several millimeters to several tens of centimeters.
  • An insulating resin is used for the base film of the film wiring of the present invention. This is to prevent the conductive layer from coming into contact with other metals or the like and causing an electrical short circuit.
  • an inexpensive PET film or a polyimide film with high heat resistance may be used. The thinner the thickness, the easier it is to cut into the film wiring as long as it has the strength necessary for handling the film wiring and the flexibility for easy handling.
  • a coating having the same components as the coating layer may be formed as a base layer between the base film and the conductive layer.
  • the thickness of the base film may be set to 1 to 1000 ⁇ m, for example, as long as it exhibits strength enough to withstand film wiring applications.
  • the lower limit of the thickness is 10 ⁇ m, and the upper limit of the thickness is 500 ⁇ m, which is a desirable range for easy handling.
  • a sputtering method is preferably used to form the conductive layer and coating layer for the film wiring of the present invention.
  • Methods for forming a conductive layer include plating, which is one of the wet methods, and several physical vapor deposition methods, which form a dry method in a vacuum. Sputtering is the most suitable method for forming the film.
  • the conductive layer of the film wiring of the present invention requires high electrical conductivity, and an alloy or an alloy containing any of Al, Cu, and Ag as a main component (containing 80 at% or more), which can easily obtain an electrical resistance of 10 ⁇ cm or less. Pure metals with a purity of 98% or higher are suitable.
  • Al and Cu, which are less expensive than Ag, are preferable, and Cu, which has a higher melting point than Al, is more preferable in consideration of long-term reliability such as electromigration.
  • the coating layer used in the film wiring of the present invention protects the conductive layer from the external environment. Then, environmental resistance for suppressing corrosion of the conductive layer, and improvement of adhesion with the film substrate (base film) when a coating with the same components as the coating layer is formed as a base layer are required, so Ti, Cr , Mo and Ni as main components are desirable.
  • the reason why it is non-magnetic is that it uses the magnetron sputtering method, which has a high film formation speed. With a magnetic material, it is necessary to use a very thin target material in order to obtain a film formation speed, which shortens the life of the target material. This is because productivity decreases.
  • the term "environmental resistance” refers to surface deterioration under high-temperature and high-humidity conditions and under heating in the atmosphere. It can be confirmed by a color change and can be quantitatively evaluated, for example, by reflectance.
  • Cr and Ti are metals with high corrosion resistance, but Cr has a large internal stress when formed by sputtering, and the film may warp. At high temperatures, Ti and Ni may thermally diffuse into Cu to increase electrical resistance.
  • Mo is an element that is difficult to thermally diffuse into Al, Ag, and Cu, which are low-stress and conductive films that easily suppress warping of the film, but has low high-temperature and high-humidity resistance, and because it is a high-melting-point metal, it easily becomes brittle and bends the film.
  • the film is likely to crack when it is applied.
  • a Mo alloy to which Ni or Ti is added. More preferably, it contains 25 to 40 at % of Ni and 5 to 30 at % of Ti.
  • a Ni alloy to which Cu, Mn, and Mo are added for the coating layer in the case of soldering.
  • Mn and Mo in total is 60 at % or less, more preferably 10 to 40 at % of Cu, 7 to 25 at % of Mn and 5 to 30 at % of Mo.
  • the thickness of the conductive layer of the film wiring of the present invention is desirably 300 nm or more in order to achieve low electrical resistance.
  • the thickness of the coating layer is preferably at least 10 nm or more in order to suppress deterioration of the conductive layer due to moisture permeating the film surface or the film. If the thickness is less than 10 nm, the continuity of the film is lowered and the protective function becomes insufficient. In addition, if the thickness is increased, the electrical resistance increases and it takes a long time to form the film, resulting in a decrease in productivity.
  • a more preferable lower limit of the coating layer is 30 nm, and a more preferable upper limit of the coating layer is 100 nm.
  • a magnetic film having soft magnetic properties, such as permalloy on the lower surface or upper surface of the coating layer, it is possible to obtain a composite film that serves both as a wiring and a magnetic shield.
  • Example 1 A PET film having a thickness of 100 ⁇ m was cut into 200 ⁇ 100 mm as a base film for producing film wiring.
  • a model number SME-200E manufactured by ULVAC, Inc. was used as a sputtering device for forming the conductive layer and the coating layer.
  • the target material attached to the sputtering device has a diameter of 100 mm and a thickness of 5 mm. It was prepared by sintering powders of Mo, Ni—Mo alloy and Ti. These target materials were brazed to a copper backing plate and then attached to the sputtering apparatus.
  • the sputtering gas Ar was introduced, and the atmosphere was set to 0.5 Pa to create a Mo-Ni-Ti base layer.
  • An alloy was formed to a thickness of 30 nm at a power of 300 W, a conductive layer of Cu was formed to a thickness of 500 nm at a power of 500 W, and then a Mo--Ni--Ti alloy was formed to a thickness of 30 nm as the coating layer under the same conditions as the underlayer.
  • a cross-section of the layered structure is shown in FIG. Also, for comparison, only a Cu film as a conductive layer was formed on a PET film to a thickness of 500 nm. The electrical resistivity of this Cu film was 2.1 ⁇ cm.
  • a PET film formed with a Cu conductive layer and a Mo-Ni-Ti coating layer and a PET film formed with only a Cu conductive layer were cut into 25 x 50 mm pieces and placed in a high-temperature and high-humidity bath set at a relative humidity of 85% and a temperature of 85 ° C.
  • the case where the Mo--Ni--Ti coating layer was formed had little discoloration and had a metallic luster, but the case where only the Cu conductive layer was formed turned brown. It was confirmed that the formation of the Mo--Ni--Ti coating layer can greatly improve the moisture resistance.
  • a PET film on which a coating layer and a conductive layer were formed was cut to a length of 200 mm and a width of 3 mm using a rotary cutter (manufactured by Lion Business Machine Co., Ltd.: model RC-B4) to prepare film wiring of the present invention example.
  • the terminal of the T10 type LED light bulb and one end of the film wiring (on the side where the conductive film is formed) were fixed, and when the other end of the film wiring was connected to a 12 V power supply, the LED lit up and the film wiring was confirmed.
  • the existing covered wiring with an outer diameter of about 0.5 to 1.5 mm can be made into a thinner and wider area film wiring, and the effect of making it a light weight, space-saving and inexpensive electric wiring. considered to be large.
  • Example 2 A polyimide film having a thickness of 50 ⁇ m was cut into a size of 280 ⁇ 100 mm as a base film for producing film wiring.
  • a model number: CS-200 manufactured by ULVAC, Inc. was used as a sputtering device for forming the conductive layer and the coating layer.
  • the target material attached to the sputtering device has a diameter of 100 mm and a thickness of 5 mm, and is processed from a plate of 4N oxygen-free copper for the conductive film. After weighing predetermined amounts of Ni, blocks of oxygen-free copper, massive Mn and Mo raw materials, ingots were produced by melting and casting in a vacuum melting furnace, and then machined.
  • a polyimide film having a Cu conductive layer and a Ni—Cu—Mo—Mn coating layer (film of the present invention) and a polyimide film having only a Cu conductive layer (film of a comparative example) were cut into 25 ⁇ 50 mm pieces.
  • the Ni—Cu—Mo—Mn coating layer was hardly discolored and had a metallic luster, but Cu conductivity.
  • the color turned dark brown. It was confirmed that the formation of the Ni--Cu--Mo--Mn coating layer can greatly improve the moisture resistance.
  • a polyimide film having a Ni—Cu—Mo—Mn coating layer and a Cu conductive layer was cut into stripes with a width of 5 mm and a length of 100 mm using a rotary cutter (manufactured by Lion Business Machine Co., Ltd.: model RC-B4). It was cut into pieces to prepare film wiring of an example of the present invention. Then, the Cu conducting wire portion of the existing coated wiring (wiring in which the Cu conducting wire is coated with resin) with Sn-based solder attached to the end portion of the film wiring of the present invention is pressed while being heated with a soldering iron, and the Sn-based solder melts. After that, the soldering iron was released to cool.
  • Example 2 The covered wiring and the film wiring were joined, and continuity was confirmed. Subsequently, in the same manner as in Example 1, the terminal of a 10-inch LED light bulb and one end of the film wiring (the side on which the conductive film is formed) were fixed to the terminal of the T10-type LED light bulb, and the coated wiring side was connected to a 12 V power source. However, the LED lit up, and it was confirmed that the film wiring could be brazed and joined to the existing coated wiring. It is thought that the conventional coated wiring that requires a large current and the device that can use the film wiring for power saving can be mixed and used separately, and it is possible to make a useful electric wiring.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

The present invention provides a method for producing a novel electrical wiring line which is suited to the demands for weight saving and space saving, and which can be produced at a low cost. A method for producing a film wire, wherein an electrical wiring line is obtained by separating a film, which comprises a base film that is formed of an insulating resin, a conductive layer that is formed on the upper surface of the base film and a cover layer that is formed on the upper surface of the conductive layer, into a predetermined shape. It is preferable that: the conductive layer and the cover layer are formed by a sputtering method; the conductive layer has an electrical resistivity of 10 µΩcm or less, while being mainly composed of any one of Al, Cu and Ag; and the cover layer is a non-magnetic alloy film that is mainly composed of any one of Ti, Cr, Mo and Ni.

Description

フィルム配線の製造方法Film wiring manufacturing method
 本発明はフィルム配線の製造方法に関するものである。 The present invention relates to a method for manufacturing film wiring.
 近年、内燃機関で動力を得ている自動車やオートバイ等には環境保護の観点から徐々に電動化が進んでいる。自動車の燃費や電費の向上には構造材料の軽量化が不可欠であり、鉄系材料からより軽量なAl系材料やカ-ボン複合材の使用比率が増加している。またボディ等の外装も金属から樹脂等への置き換えも進んでいる。しかし、自動車は種々の安全や快適装備のために電装品が増え、それを繋ぐ電気配線の重量が増加している。現在の電気配線は銅線に樹脂を被せた被覆配線が用いられており、銅線をより軽い金属であるアルミニュウム線としたアルミ被覆配線(特許文献1)への検討や、中間の配線をなくし無線で制御するドライブバイワイヤ-(特許文献2)等が検討されている。
 また、省スペ-ス用の配線としては樹脂フィルム上に微細な銅線をめっき等で形成したフレキシブルプリント基板等が多くの家電品、TV、パソコン、携帯電話の内部基板や端子の接続等に用いられている。
In recent years, automobiles, motorcycles, and the like powered by internal combustion engines are gradually being electrified from the viewpoint of environmental protection. It is essential to reduce the weight of structural materials in order to improve the fuel and electricity consumption of automobiles, and the ratio of use of lighter Al-based materials and carbon composite materials to iron-based materials is increasing. In addition, the exterior such as the body is also being replaced from metal to resin or the like. However, automobiles are equipped with an increasing number of electrical components for various safety and comfort equipment, and the weight of the electrical wiring that connects them is increasing. Current electrical wiring uses coated wiring in which copper wires are covered with resin. A drive-by-wire that is wirelessly controlled (Patent Document 2) and the like are being studied.
In addition, as wiring for space saving, flexible printed circuit boards, etc., which are formed by plating fine copper wires on resin films, are used in many home appliances, TVs, personal computers, mobile phone internal boards and connection of terminals. used.
特開2016-108617JP 2016-108617 特開2017-144945JP 2017-144945
 上述した軽量化のために検討されているアルミ被覆配線は、現在の銅の樹脂被覆と同等の空間が必要となるため省スペ-ス化には対応できず、ドライブバイワイヤ-は軽量化と省スペ-ス化が期待できる反面、高価であるとともに空間の電磁ノイズの影響を受けやすい課題がある。また、フレキシブルプリント基板は製造できる大きさに制限があり、一般にその長さは数cm程度であり、数mにもおよぶ自動車等の電気配線への対応は難しく、製造工程にはフォトエッチング工程が必要なため高価となる課題がある。また、樹脂を主体とする外装は導電性が低いため、接地配線(アース線)が新たに必要となる課題もある。 Aluminum-coated wiring, which is being considered for weight reduction as mentioned above, requires a space equivalent to the current copper resin coating, so it cannot be used to save space. Although it can be expected to be space-saving, it has the problem of being expensive and susceptible to electromagnetic noise in the space. In addition, there is a limit to the size of flexible printed circuit boards that can be manufactured. Generally, the length of a flexible printed circuit board is only a few centimeters. There is a problem that it is expensive because it is necessary. In addition, since the exterior mainly made of resin has low conductivity, there is also a problem that a new ground wiring (earth wire) is required.
 本発明の目的は、軽量化や省スペ-ス化の要求に対応する、安価に製造可能な新たな電機配線を提供することにある。 The purpose of the present invention is to provide a new electrical wiring that can be manufactured at low cost, meeting the demands for weight reduction and space saving.
 本発明者は、上記課題に鑑み、被覆配線に替わる軽量、省スペ-スを達成できる種々の電気配線について鋭意検討を行った。その結果、フィルム上に薄膜を形成し所定の大きさ分離することで軽量かつ省スペ-スな電気配線が安価に得られることを見出し本発明に到達した。
 すなわち本発明は、絶縁性樹脂からなるベースフィルムと、このベースフィルムの上面に形成された導電層と、この導電層の上面に形成された被覆層とを備えたフィルムを、所定の形状に分離して電気配線とするフィルム配線の製造方法である。
 また、導電層の厚みは300nm以上、被覆層の厚みは10~200nmであることが好ましい。
 また、導電層および被覆層はスパッタリング法で形成することが好ましく、導電層は電気抵抗率が10μΩcm以下であり、Al、Cu、Agのいずれかを主成分とすることが好ましい。
 また、被覆層はTi、Cr、Mo、Niのいずれかを主成分する非磁性の合金膜からなることが好ましい。
 また、被覆層はMoを主成分とし、NiとTiを合わせて60at%以下含有する合金であることが好ましい。
 また、被覆層はNiを主成分とし、Cu、Mn、Moを合わせて60at%以下含有する合金であることが好ましい。
In view of the above problems, the present inventors diligently studied various electrical wiring that can replace the covered wiring and achieve light weight and space saving. As a result, the present inventors have found that light-weight, space-saving electric wiring can be obtained at low cost by forming a thin film on a film and separating it into a predetermined size.
That is, the present invention separates a film having a base film made of an insulating resin, a conductive layer formed on the upper surface of the base film, and a coating layer formed on the upper surface of the conductive layer into predetermined shapes. It is a manufacturing method of the film wiring used as an electric wiring.
Moreover, it is preferable that the thickness of the conductive layer is 300 nm or more, and the thickness of the coating layer is 10 to 200 nm.
Moreover, the conductive layer and the coating layer are preferably formed by a sputtering method, and the conductive layer preferably has an electrical resistivity of 10 μΩcm or less, and is mainly composed of Al, Cu, or Ag.
Also, the coating layer is preferably made of a non-magnetic alloy film containing any one of Ti, Cr, Mo and Ni as a main component.
Moreover, the coating layer is preferably an alloy containing Mo as a main component and a total of 60 at % or less of Ni and Ti.
Moreover, the coating layer is preferably an alloy containing Ni as a main component and containing 60 at % or less of Cu, Mn, and Mo in total.
 本発明によれば、例えば自動車やオートバイ等の電気配線に用いられている被覆配線に替わって、軽量、省スペ-スかつ安価に製造できるフィルム配線を提供することが可能である。 According to the present invention, it is possible to provide film wiring that is lightweight, space-saving, and inexpensive to manufacture, in place of covered wiring that is used for electrical wiring in automobiles, motorcycles, and the like.
本発明のフィルム配線の断面模式図の一例である。It is an example of the cross-sectional schematic diagram of the film wiring of this invention.
 本発明のフィルム配線の重要な特徴の一つはベースフィルム上に導電層とそれを覆う被覆層を形成してフィルムとした後に、所定のサイズに分離することで電気配線とするフィルム配線の製造方法にある。以下、本発明のフィルム配線について詳細を説明する。本発明のフィルム配線は、銅線に樹脂を被覆した被覆配線を用いている、例えば、自動車やオートバイ等の軽量化や省スペ-ス化が要求されている移動体や、大面積の空間に低電流な電子機器を配置する用途に適用することができる。 One of the important features of the film wiring of the present invention is the production of film wiring by forming a conductive layer and a coating layer covering it on a base film to form a film, and then separating it into pieces of a predetermined size to form electric wiring. in the method. The film wiring of the present invention will be described in detail below. The film wiring of the present invention uses a coated wiring in which a copper wire is coated with a resin. It can be applied to applications in which low-current electronic devices are arranged.
 これまで薄膜配線はフォトエッチング工程を用いて基板上の薄膜のみを精密な配線パタ-ンとする方法が一般的であるが、フォトエッチング工程では高価な露光機を設置し、消耗品となる高価なフォトレジストや薬液を用いて加工し、その後、有機溶剤や多量の純水等を用いて洗浄する必要があり高価な製品にしか用いられていない。さらに大面積になるほど大型の製造設備が必要であり大きな設備投資が必要であった。
 それに対して現在の自動車等に用いられている被覆配線を代用するのであれば、精密な配線パタ-ンは不要であり、本発明のベースフィルム上に形成した導電層および被覆層をベースフィルムごと切り分けて(所定の形状に分離して)配線とすることで安価に電気配線を製造することが可能となる。これにより自動車やオートバイの燃費や電費の向上に伴う環境負荷の低減にも貢献できる。
 また、本発明のフィルムをストライプ状(直線状)に切り分けてフィルム配線とすることも可能であるが、広い面積に切り分けることで導電層の断面積を広くして電流密度を低減させることで、エレクトロマイグレーションの発生を抑制することも可能である。また、導電性の低い樹脂製ボディの形状に沿うようにフィルム配線を貼り付けて接地配線(アース)とすることも可能である。なお、分離する方法はハサミやカッタ-ナイフ等の刃物で切り分けても良いし、レーザ-を照射して焼き切る方法を用いても良い。フィルム配線は現状の数十センチメートルの幅の樹脂フィルムにスパッタリング法等を活用し安価に導電層および被覆層を形成した後に所定の数ミリメ-トルから数十センチメートルに切り分ければ良い。
Until now, thin-film wiring has generally been done by using a photo-etching process to create a precise wiring pattern only on the thin film on the substrate. It is used only for expensive products because it needs to be processed using a strong photoresist or chemicals, and then cleaned using an organic solvent or a large amount of pure water. Furthermore, the larger the area, the larger the manufacturing equipment required and the larger the capital investment required.
On the other hand, if the covered wiring used in current automobiles etc. is substituted, a precise wiring pattern is not required, and the conductive layer and the covering layer formed on the base film of the present invention are attached together with the base film. By cutting (separating into predetermined shapes) to form wiring, it is possible to manufacture electric wiring at a low cost. This will contribute to the reduction of the environmental load associated with the improvement of fuel and electricity consumption of automobiles and motorcycles.
Moreover, it is possible to cut the film of the present invention into stripes (straight lines) to form film wiring. It is also possible to suppress the occurrence of electromigration. It is also possible to attach a film wiring along the shape of a low-conductivity resin body to serve as a ground wiring (earth). As for the method of separation, a cutting tool such as scissors or a cutter knife may be used, or a method of burning off by irradiating a laser may be used. The film wiring can be formed by inexpensively forming a conductive layer and a coating layer on a current resin film with a width of several tens of centimeters by using a sputtering method or the like, and then cutting the film into predetermined pieces of several millimeters to several tens of centimeters.
 本発明のフィルム配線のベースフィルムには、絶縁性樹脂を用いる。これは導電層が他の金属等と接触して電気的な短絡を起こさないようにするためである。例えば、安価なPETフィルムでも良いし、耐熱性の高いポリイミドフィルムでも良い。その厚さはフィルム配線を取り扱う際に必要な強度と取り回ししやすいフレキシブル性を有するならば薄いほど良くフィルム配線に切り分けることがより容易となる。さらに切り分けたフィルム配線の導電層形成面に自動車等の車体形状に沿うような形状とした絶縁性フィルムを張り合わせるとより好ましい。また密着性を向上させるために、被覆層と同じ成分の被膜を、下地層としてベースフィルムと導電層との間に形成させてもよい。なおベースフィルムの厚みは、フィルム配線用途に耐えうる強度を発揮すればよく、例えば1~1000μmと設定することができる。厚みの下限は10μm、厚みの上限は500μmが取り扱いし易い望ましい範囲である。 An insulating resin is used for the base film of the film wiring of the present invention. This is to prevent the conductive layer from coming into contact with other metals or the like and causing an electrical short circuit. For example, an inexpensive PET film or a polyimide film with high heat resistance may be used. The thinner the thickness, the easier it is to cut into the film wiring as long as it has the strength necessary for handling the film wiring and the flexibility for easy handling. Furthermore, it is more preferable to laminate an insulating film having a shape conforming to the shape of the vehicle body of an automobile or the like to the conductive layer forming surface of the cut film wiring. Further, in order to improve adhesion, a coating having the same components as the coating layer may be formed as a base layer between the base film and the conductive layer. The thickness of the base film may be set to 1 to 1000 μm, for example, as long as it exhibits strength enough to withstand film wiring applications. The lower limit of the thickness is 10 μm, and the upper limit of the thickness is 500 μm, which is a desirable range for easy handling.
 本発明のフィルム配線に対する導電層や被覆層の形成にはスパッタリング法を用いることが望ましい。導電層を形成する方法には湿式法の一つのめっき法や乾式法として真空中で形成するいくつかの物理蒸着法があるが、樹脂フィルムの熱による変質や収縮を抑制し、大面積に安定的に形成するにはスパッタリング法が最も適している。 A sputtering method is preferably used to form the conductive layer and coating layer for the film wiring of the present invention. Methods for forming a conductive layer include plating, which is one of the wet methods, and several physical vapor deposition methods, which form a dry method in a vacuum. Sputtering is the most suitable method for forming the film.
 本発明のフィルム配線の導電層には高い電気伝導性が必要であり電気抵抗としては10μΩcm以下が容易に得られるAl、Cu、Agのいずれかを主成分(80at%以上含む)とした合金または純度が98%以上の純金属が適している。また高価なAgより安価なAlやCuが望ましく、さらにエレクトロマイグレ-ション等の長期信頼性を考慮するとAlより融点が高いCuを主成分とする方がなお良い。 The conductive layer of the film wiring of the present invention requires high electrical conductivity, and an alloy or an alloy containing any of Al, Cu, and Ag as a main component (containing 80 at% or more), which can easily obtain an electrical resistance of 10 μΩcm or less. Pure metals with a purity of 98% or higher are suitable. In addition, Al and Cu, which are less expensive than Ag, are preferable, and Cu, which has a higher melting point than Al, is more preferable in consideration of long-term reliability such as electromigration.
 本発明のフィルム配線に用いられる被覆層は、導電層を外部環境から保護するものである。そして、導電層の腐食を抑制するための耐環境性や、被覆層と同じ成分の被膜を下地層として形成した際にはフィルム基板(ベースフィルム)との密着性改善が求められるためTi、Cr、Mo、Niを主成分とする非磁性の合金膜が望ましい。非磁性とするのは膜形成速度の速いマグネトロンスパッタ法を利用するためであり、磁性体では膜形成速度得るために非常に薄い厚みのターゲット材とする必要があり、ターゲット材の寿命が低下し生産性が低下するためである。
 尚、「耐環境性」とは高温高湿環境下および大気中加熱下における表面変質を言い。変色により確認でき、例えば反射率によって定量的に評価することができる。
 CrやTiは耐食性の高い金属であるがCrはスパッタリングで形成した際の内部応力が大きくフィルムが反る場合がある。TiとNiは高温ではCuに熱拡散して電気抵抗が増加する場合がある。Moはフィルムの反りを抑制しやすい低応力かつ導電膜であるAl、Ag、Cuに熱拡散しにくい元素であるが高温高湿耐性が低く、高融点金属であるため脆くなりやすく、フィルムを曲げた際に膜にクラックが入りやすい欠点を有する。
 このため、耐湿性を改善するとともに、クラックの入りにくい非晶質構造とするために、NiやTiを添加したMo合金とすることが好ましく、NiとTiの含有量は合わせて60at%以下、より好ましくは、Niを25~40at%、Tiを5~30at%含有することが好ましい。
 また、耐湿性を改善するとともに制御基板やCu被覆配線との電気接続性を向上させるために半田接合する場合の被覆層にはCu、Mn、Moを添加したNi合金とすることが好ましく、Cu、Mn、Moの含有量は合わせて60at%以下、より好ましくはCuを10~40at%、Mnを7~25at%、Moを5~30at%含有することが好ましい。
The coating layer used in the film wiring of the present invention protects the conductive layer from the external environment. Then, environmental resistance for suppressing corrosion of the conductive layer, and improvement of adhesion with the film substrate (base film) when a coating with the same components as the coating layer is formed as a base layer are required, so Ti, Cr , Mo and Ni as main components are desirable. The reason why it is non-magnetic is that it uses the magnetron sputtering method, which has a high film formation speed. With a magnetic material, it is necessary to use a very thin target material in order to obtain a film formation speed, which shortens the life of the target material. This is because productivity decreases.
The term "environmental resistance" refers to surface deterioration under high-temperature and high-humidity conditions and under heating in the atmosphere. It can be confirmed by a color change and can be quantitatively evaluated, for example, by reflectance.
Cr and Ti are metals with high corrosion resistance, but Cr has a large internal stress when formed by sputtering, and the film may warp. At high temperatures, Ti and Ni may thermally diffuse into Cu to increase electrical resistance. Mo is an element that is difficult to thermally diffuse into Al, Ag, and Cu, which are low-stress and conductive films that easily suppress warping of the film, but has low high-temperature and high-humidity resistance, and because it is a high-melting-point metal, it easily becomes brittle and bends the film. It has the disadvantage that the film is likely to crack when it is applied.
For this reason, in order to improve moisture resistance and to have an amorphous structure that is less likely to crack, it is preferable to use a Mo alloy to which Ni or Ti is added. More preferably, it contains 25 to 40 at % of Ni and 5 to 30 at % of Ti.
In order to improve moisture resistance and improve electrical connectivity with the control substrate and Cu-coated wiring, it is preferable to use a Ni alloy to which Cu, Mn, and Mo are added for the coating layer in the case of soldering. , Mn and Mo in total is 60 at % or less, more preferably 10 to 40 at % of Cu, 7 to 25 at % of Mn and 5 to 30 at % of Mo.
 本発明のフィルム配線の導電層の厚みは低い電気抵抗とするためには300nm以上とすることが望ましい。また、被覆層の厚みは膜表面やフィルムを透過してくる湿気等による導電層の変質を抑制するために最低でも10nm以上とすることが好ましい。10nm未満では膜の連続性が低下して保護機能が十分でなくなる。また厚くなると電気抵抗が高くなるとともに形成に時間を有し生産性が低下するため、200nm以下とすることが好ましい。より好ましい被覆層の下限は30nmであり、より好ましい被覆層の上限は100nmである。
 また、被覆層下面または上面に、例えばパーマロイ等の軟磁気特性を有する磁性膜を形成することで、配線と磁気シ-ルドを兼ねた複合フィルムとすることも可能である。
The thickness of the conductive layer of the film wiring of the present invention is desirably 300 nm or more in order to achieve low electrical resistance. Moreover, the thickness of the coating layer is preferably at least 10 nm or more in order to suppress deterioration of the conductive layer due to moisture permeating the film surface or the film. If the thickness is less than 10 nm, the continuity of the film is lowered and the protective function becomes insufficient. In addition, if the thickness is increased, the electrical resistance increases and it takes a long time to form the film, resulting in a decrease in productivity. A more preferable lower limit of the coating layer is 30 nm, and a more preferable upper limit of the coating layer is 100 nm.
Further, by forming a magnetic film having soft magnetic properties, such as permalloy, on the lower surface or upper surface of the coating layer, it is possible to obtain a composite film that serves both as a wiring and a magnetic shield.
 (実施例1)
 フィルム配線を作製するためのベースフィルムとして100μmの厚みのPETフィルムを200×100mmに切断した。導電層、被覆層を形成するために、スパッタ装置はアルバック株式会社製の型式番号:SME-200Eを用いた。スパッタ装置に取り付けるターゲット材は直径100mm、厚さ5mmであり、導電膜用には純度4N無酸素銅の板より加工し、被覆層用にはMo―30Ni-20Ti(原子%)なるように、MoとNi-Mo合金とTiの粉末を焼結して作成した。これらのターゲット材を銅製のバッキングプレートにろう付けした後スパッタ装置に取り付けた。切断したPETフィルムをスパッタ装置の基板ホルダ-に固定して5×10-5Paまで真空排気した後にスパッタガスであるArを導入し0.5Paの雰囲気において、下地層となるMo-Ni-Ti合金を電力300Wで30nm形成し、その後導電層となるCuを500Wで500nm形成した後、さらに被覆層となるMo-Ni-Ti合金を下地層と同じ条件で30nm形成した。層構造の断面を図1に示す。また、比較用にPETフィルム上に導電層のCu膜のみを500nm形成した。このCu膜の電気抵抗率は2.1μΩcmであった。
(Example 1)
A PET film having a thickness of 100 μm was cut into 200×100 mm as a base film for producing film wiring. A model number SME-200E manufactured by ULVAC, Inc. was used as a sputtering device for forming the conductive layer and the coating layer. The target material attached to the sputtering device has a diameter of 100 mm and a thickness of 5 mm. It was prepared by sintering powders of Mo, Ni—Mo alloy and Ti. These target materials were brazed to a copper backing plate and then attached to the sputtering apparatus. After fixing the cut PET film to the substrate holder of the sputtering device and evacuating to 5 × 10 -5 Pa, the sputtering gas Ar was introduced, and the atmosphere was set to 0.5 Pa to create a Mo-Ni-Ti base layer. An alloy was formed to a thickness of 30 nm at a power of 300 W, a conductive layer of Cu was formed to a thickness of 500 nm at a power of 500 W, and then a Mo--Ni--Ti alloy was formed to a thickness of 30 nm as the coating layer under the same conditions as the underlayer. A cross-section of the layered structure is shown in FIG. Also, for comparison, only a Cu film as a conductive layer was formed on a PET film to a thickness of 500 nm. The electrical resistivity of this Cu film was 2.1 μΩcm.
 Cu導電層とMo-Ni-Ti被覆層を形成したPETフィルムとCu導電層のみを形成したPETフィルムを25×50mmに切断して相対湿度85%上温度85℃に設定した高温高湿槽に300時間放置したところ、Mo-Ni-Ti被覆層を形成した場合はほとんど変色せず金属光沢を有していたが、Cu導電層のみを形成した場合は茶褐色に変色した。Mo-Ni-Ti被覆層を形成することで耐湿性を大きく改善できることを確認した。 A PET film formed with a Cu conductive layer and a Mo-Ni-Ti coating layer and a PET film formed with only a Cu conductive layer were cut into 25 x 50 mm pieces and placed in a high-temperature and high-humidity bath set at a relative humidity of 85% and a temperature of 85 ° C. When left to stand for 300 hours, the case where the Mo--Ni--Ti coating layer was formed had little discoloration and had a metallic luster, but the case where only the Cu conductive layer was formed turned brown. It was confirmed that the formation of the Mo--Ni--Ti coating layer can greatly improve the moisture resistance.
 被覆層と導電層を形成したPETフィルムをロータリーカッター(ライオン事務機製:型式RC-B4)を用いて長さ200mmの幅3mmに切断して本発明例のフィルム配線を作製した。T10型のLED電球の端子とフィルム配線の一端(導電膜形成面側)とを固定し、フィルム配線の他端を12Vの電源に接続したところLEDは点灯しフィルム配線となることを確認した。これにより、外径が0.5~1.5mmほどある既存の被覆配線を、より薄くかつ、広い面積のフィルム配線とすることで、軽量、省スペ-スかつ安価な電気配線とする効果は大きいと考えられる。 A PET film on which a coating layer and a conductive layer were formed was cut to a length of 200 mm and a width of 3 mm using a rotary cutter (manufactured by Lion Business Machine Co., Ltd.: model RC-B4) to prepare film wiring of the present invention example. The terminal of the T10 type LED light bulb and one end of the film wiring (on the side where the conductive film is formed) were fixed, and when the other end of the film wiring was connected to a 12 V power supply, the LED lit up and the film wiring was confirmed. As a result, the existing covered wiring with an outer diameter of about 0.5 to 1.5 mm can be made into a thinner and wider area film wiring, and the effect of making it a light weight, space-saving and inexpensive electric wiring. considered to be large.
 (実施例2)
 フィルム配線を作製するためのベースフィルムとして50μmの厚みのポリイミドフィルムを280×100mmに切断した。導電層、被覆層を形成するために、スパッタ装置はアルバック株式会社製の型式番号:CS-200を用いた。スパッタ装置に取り付けるターゲット材は直径100mm、厚さ5mmであり、導電膜用には純度4N無酸素銅の板より加工し、被覆層用のNi-30Cu-15Mo―10Mn(原子%)は、電解Ni、無酸素銅のブロック、塊状のMnおよびMo原料を所定量に秤量した後に真空溶解炉にて溶解鋳造法によりインゴットを作製した後に機械加工により作成した。これらのターゲット材を銅製のバッキングプレートにろう付けした後スパッタ装置に取り付けた。切断したポリイミドフィルムをスパッタ装置の基板ホルダ-に固定して7×10-5Paまで真空排気した後にスパッタガスであるArを導入し0.5Paの雰囲気において、下地層となるNi-Cu-Mo-Mn合金を電力300Wで30nm形成し、その後導電層となるCuを500Wで500nm形成した後、さらに被覆層となるNi-Cu-Mo-Mn合金を下地層と同じ条件で30nm形成した。層構造の断面を図1に示す。また、比較用にポリイミドフィルム上に導電層のCu膜のみを500nm形成した。
(Example 2)
A polyimide film having a thickness of 50 μm was cut into a size of 280×100 mm as a base film for producing film wiring. A model number: CS-200 manufactured by ULVAC, Inc. was used as a sputtering device for forming the conductive layer and the coating layer. The target material attached to the sputtering device has a diameter of 100 mm and a thickness of 5 mm, and is processed from a plate of 4N oxygen-free copper for the conductive film. After weighing predetermined amounts of Ni, blocks of oxygen-free copper, massive Mn and Mo raw materials, ingots were produced by melting and casting in a vacuum melting furnace, and then machined. These target materials were brazed to a copper backing plate and then attached to the sputtering apparatus. After fixing the cut polyimide film to the substrate holder of the sputtering device and evacuating to 7×10 −5 Pa, the sputtering gas Ar was introduced and the atmosphere of 0.5 Pa was applied to Ni—Cu—Mo as the underlying layer. A -Mn alloy was formed to a thickness of 30 nm at a power of 300 W, a conductive layer of Cu was formed to a thickness of 500 nm at a power of 500 W, and then a Ni--Cu--Mo--Mn alloy was formed to a thickness of 30 nm as the coating layer under the same conditions as the underlayer. A cross-section of the layered structure is shown in FIG. For comparison, only a Cu film as a conductive layer was formed on a polyimide film to a thickness of 500 nm.
 Cu導電層とNi-Cu-Mo-Mn被覆層を形成したポリイミドフィルム(本発明例のフィルム)とCu導電層のみを形成したポリイミドフィルム(比較例のフィルム)を25×50mmに切断して相対湿度85%上温度85℃に設定した高温高湿槽に300時間放置したところ、Ni-Cu-Mo-Mn被覆層を形成した場合はほとんど変色せず金属光沢を有していたが、Cu導電層のみを形成した場合は茶褐色に変色した。Ni-Cu-Mo-Mn被覆層を形成することで耐湿性を大きく改善できることを確認した。 A polyimide film having a Cu conductive layer and a Ni—Cu—Mo—Mn coating layer (film of the present invention) and a polyimide film having only a Cu conductive layer (film of a comparative example) were cut into 25×50 mm pieces. When left for 300 hours in a high-temperature and high-humidity bath set at a humidity of 85% and a temperature of 85° C., the Ni—Cu—Mo—Mn coating layer was hardly discolored and had a metallic luster, but Cu conductivity. When only a layer was formed, the color turned dark brown. It was confirmed that the formation of the Ni--Cu--Mo--Mn coating layer can greatly improve the moisture resistance.
 Ni-Cu-Mo-Mn被覆層とCu導電層を形成したポリイミドフィルム(本発明例のフィルム)をロータリーカッター(ライオン事務機製:型式RC-B4)を用いて幅5mm、長さ100mmのストライプ状に切断し、本発明例のフィルム配線を作製した。そして本発明例のフィルム配線端部にSn系半田を付着させた既存の被覆配線(Cu導線に樹脂を被覆した配線)のCu導線部を半田ごてで加熱しながら押し付け、Sn系半田が溶融した後に半田ごてを放して冷却した。被覆配線とフィルム配線は接合されており、導通を確認した。続いて実施例1と同様にT10型のLED電球の端子に10型のLED電球の端子とフィルム配線の一端(導電膜形成面側)とを固定し、被覆配線側を12Vの電源に接続したところLEDは点灯し、既存の被覆配線にろう付けして接合できるフィルム配線となることを確認した。大電流の必要な従来の被覆配線と省電力でフィルム配線が適用できる機器を混在して使い分ける有用な電気配線とする事ができると考えられる。 A polyimide film having a Ni—Cu—Mo—Mn coating layer and a Cu conductive layer (film of the present invention) was cut into stripes with a width of 5 mm and a length of 100 mm using a rotary cutter (manufactured by Lion Business Machine Co., Ltd.: model RC-B4). It was cut into pieces to prepare film wiring of an example of the present invention. Then, the Cu conducting wire portion of the existing coated wiring (wiring in which the Cu conducting wire is coated with resin) with Sn-based solder attached to the end portion of the film wiring of the present invention is pressed while being heated with a soldering iron, and the Sn-based solder melts. After that, the soldering iron was released to cool. The covered wiring and the film wiring were joined, and continuity was confirmed. Subsequently, in the same manner as in Example 1, the terminal of a 10-inch LED light bulb and one end of the film wiring (the side on which the conductive film is formed) were fixed to the terminal of the T10-type LED light bulb, and the coated wiring side was connected to a 12 V power source. However, the LED lit up, and it was confirmed that the film wiring could be brazed and joined to the existing coated wiring. It is thought that the conventional coated wiring that requires a large current and the device that can use the film wiring for power saving can be mixed and used separately, and it is possible to make a useful electric wiring.
1.ベースフィルム
2.下地層
3.導電層
4.被覆層

 
1. base film2. Underlayer 3 . conductive layer4. covering layer

Claims (7)

  1.  絶縁性樹脂からなるベースフィルムと、前記ベースフィルムの上面に形成された導電層と、前記導電層の上面に形成された被覆層とを備えたフィルムを、所定の形状に分離して電気配線とすることを特徴とするフィルム配線の製造方法。 A film comprising a base film made of an insulating resin, a conductive layer formed on the upper surface of the base film, and a coating layer formed on the upper surface of the conductive layer is separated into a predetermined shape and used for electrical wiring. A method for manufacturing film wiring, characterized by:
  2.  前記導電層の厚みは300nm以上であり、前記被覆層の厚みは10~200nmであることを特徴とする請求項1に記載のフィルム配線の製造方法。 The method for manufacturing film wiring according to claim 1, wherein the conductive layer has a thickness of 300 nm or more, and the coating layer has a thickness of 10 to 200 nm.
  3.  前記導電層および被覆層はスパッタリング法で形成することを特徴とする請求項1または2に記載のフィルム配線の製造方法。 The method for manufacturing film wiring according to claim 1 or 2, wherein the conductive layer and the coating layer are formed by a sputtering method.
  4.  前記導電層は電気抵抗率が10μΩcm以下であり、Al、Cu、Agのいずれかを主成分とすることを特徴とする請求項1または2に記載のフィルム配線の製造方法。 3. The method of manufacturing a film wiring according to claim 1 or 2, wherein the conductive layer has an electrical resistivity of 10 μΩcm or less and is mainly composed of any one of Al, Cu, and Ag.
  5.  前記被覆層はTi、Cr、Mo、Niのいずれかを主成分する非磁性の合金膜からなることを特徴とする請求項1または2に記載のフィルム配線の製造方法。 3. The method of manufacturing a film wiring according to claim 1 or 2, wherein the coating layer is made of a non-magnetic alloy film containing any one of Ti, Cr, Mo and Ni as a main component.
  6.  前記被覆層はMoを主成分とし、NiとTiを合わせて60at%以下含有する合金であることを特徴とする請求項5に記載のフィルム配線の製造方法。 The method of manufacturing a film wiring according to claim 5, wherein the coating layer is an alloy containing Mo as a main component and a total of 60 at% or less of Ni and Ti.
  7.  前記被覆層はNiを主成分とし、CuとMnとMoを合わせて60at%以下含有する合金であることを特徴とする請求項5に記載のフィルム配線の製造方法。

     
    6. The method of manufacturing a film wiring according to claim 5, wherein the coating layer is an alloy containing Ni as a main component and a total content of Cu, Mn and Mo of 60 at % or less.

PCT/JP2023/000515 2022-01-31 2023-01-12 Method for producing film wire WO2023145440A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338539A (en) * 2000-05-25 2001-12-07 Toru Teraoka Manufacturing method and device of thin laminated electrical component
JP2017066519A (en) * 2015-10-01 2017-04-06 日立金属株式会社 Laminate wiring film for electronic component and sputtering target material for forming coating layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338539A (en) * 2000-05-25 2001-12-07 Toru Teraoka Manufacturing method and device of thin laminated electrical component
JP2017066519A (en) * 2015-10-01 2017-04-06 日立金属株式会社 Laminate wiring film for electronic component and sputtering target material for forming coating layer

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