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WO2022237854A1 - 一种rcled灯珠封装工艺及所述方法封装的rcled灯珠 - Google Patents

一种rcled灯珠封装工艺及所述方法封装的rcled灯珠 Download PDF

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Publication number
WO2022237854A1
WO2022237854A1 PCT/CN2022/092327 CN2022092327W WO2022237854A1 WO 2022237854 A1 WO2022237854 A1 WO 2022237854A1 CN 2022092327 W CN2022092327 W CN 2022092327W WO 2022237854 A1 WO2022237854 A1 WO 2022237854A1
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WIPO (PCT)
Prior art keywords
rcled
layer
lamp bead
glue
reflection
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PCT/CN2022/092327
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English (en)
French (fr)
Inventor
苏三
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深圳市平深光电子科技有限公司
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Publication of WO2022237854A1 publication Critical patent/WO2022237854A1/zh

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015—Fastening arrangements intended to retain light sources
    • F21V19/0025—Fastening arrangements intended to retain light sources the fastening means engaging the conductors of the light source, i.e. providing simultaneous fastening of the light sources and their electric connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/001—Arrangement of electric circuit elements in or on lighting devices the elements being electrical wires or cables
    • F21V23/002—Arrangements of cables or conductors inside a lighting device, e.g. means for guiding along parts of the housing or in a pivoting arm
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to the technical field of lamp bead packaging, in particular to an RCLED lamp bead packaging process.
  • RCLED namely Resonant Cavity Light Emitting Diode
  • English full name is "Resonant Cavity Light Emitting Diode”.
  • the effect changes the spontaneous emission mode of the active region, and then limits the frequency and angle of the radiation spectrum, which can greatly improve the internal and external quantum efficiency, and is an excellent structure for preparing high-brightness LEDs.
  • RCLEDs are usually used as emission light sources in fields such as sights.
  • part of the light will be reflected by the lens, and the light point reflected by the lens will be reflected again by the functional area and bonding wire in the RCLED lamp bead, and the emitted RCLED light point Cause impact, form spots or ghosting, seriously affect the overall effect of the spot.
  • the traditional LED lamp bead packaging process cannot eliminate the above-mentioned reflection effect. Therefore, it is necessary to propose a new RCLED lamp bead packaging process to eliminate the reflection effect of RCLED lamp beads, and then solve the influence of light spots or ghosting on light spots, improve the effect of RCLED lamp beads emitting light spots, and make the light spots clearer and more accurate. .
  • the main purpose of the present invention is to provide a packaging process for RCLED lamp beads, which can eliminate the reflection effect of RCLED lamp beads, further solve the influence of light spots or ghosting on light spots, improve the effect of RCLED lamp beads emitting light spots, and make the light spots clearer ,accurate.
  • An RCLED lamp bead packaging process specifically includes the following steps:
  • Step 1 apply the crystal-bonding glue, and put the crystal-bonding glue into the designated position of the lamp bead bracket, the lamp bead bracket includes the lead frame;
  • Step 2 install the chip, put the RCLED chip into the glue dispensing area of the lamp bead bracket, the RCLED chip includes a light-emitting hole and a PAD;
  • Step 3 baking to solidify the die-bonding glue, which tightly combines with the pins of the RCLED chip and fixes the RCLED chip;
  • Step 4 welding a bonding wire, the bonding wire connects the lamp bead bracket to the PAD;
  • Step 5 apply the first layer of anti-reflection glue, and put the first layer of anti-reflection glue on the bottom of the lamp bead bracket to cover the functional area, but it cannot cover the front of the RCLED chip, and the RCLED chip cannot be covered the luminescent hole;
  • Step 6 baking, put the RCLED lamp beads with the first layer of anti-reflection glue into the oven for baking, so that the first layer of anti-reflection glue is cured;
  • Step 7 point the second layer of anti-reflection glue, so that the second layer of anti-reflection glue covers the bonding wire and the PAD, but cannot cover the light-emitting hole;
  • Step 8 baking, put the RCLED lamp beads that have finished the second layer of anti-reflection glue into the oven for baking, so that the second layer of anti-reflection glue is cured;
  • Step 9 test, put the packaged RCLED lamp beads on the test bench to test the luminescence and reflection effects.
  • the crystal-bonding glue is silver glue.
  • the lead frame is the first soldering point, and the PAD of the RCLED chip is the second soldering point, so that the curvature of the bonding wire is more Low.
  • the viscosity of the first layer of anti-reflection glue is 100CP-500CP.
  • the baking temperature of the first layer of anti-reflection adhesive is 120°C-180°C.
  • the baking time of the first layer of anti-reflection glue is 90 minutes to 130 minutes.
  • the viscosity of the second layer of anti-reflection glue is 15000CP-25000CP.
  • the second layer of anti-reflection glue is the same glue as the first layer of anti-reflection glue (5), and its color is black.
  • the baking temperature of the second layer of anti-reflection adhesive is 110°C-160°C.
  • the baking time of the second layer of anti-reflection adhesive is 70 minutes to 120 minutes.
  • a volumetric metering dispensing valve is used to control and accurately control the dispensing amount.
  • the present invention has the following beneficial effects:
  • An RCLED lamp bead packaging process proposed by the present invention, by dotting anti-reflection glue on the corresponding area of the RCLED lamp bead, the part that can reflect light inside the RCLED lamp bead is blocked, effectively eliminating the reflective effect of the RCLED lamp bead, and improving the performance of the RCLED lamp bead.
  • the effect of emitting light points makes the light points clearer and more precise;
  • the viscosity of the first layer of anti-reflection glue has certain fluidity, which can make the anti-reflection glue quickly fill up the designated area, and the production efficiency is high;
  • the viscosity of the second layer of anti-reflection glue is relatively high, the flow of glue is slow after dispensing, the precision of glue dispensing is improved, and the anti-reflection glue can effectively prevent the light-emitting hole of the RCLED chip from being blocked by the anti-reflection glue;
  • the lead frame is the first soldering point
  • the PAD of the RCLED chip is the second soldering point
  • the curvature of the bonding wire is lower, which can effectively reduce the
  • the thickness of the reflective glue makes the lamp beads have a good shape, reduces the amount of glue dispensed, and saves production costs, and because the thickness of the anti-reflective glue is small, it can further prevent the anti-reflective glue from blocking the light-emitting hole of the RCLED chip.
  • the present invention proposes an RCLED lamp bead packaged by the method, which includes: a lamp bead bracket (1);
  • An RCLED chip (2), the RCLED chip (2) is located in the lamp bead bracket (1);
  • PAD (7) the PAD (7) is set on the RCLED chip (2);
  • a bonding wire (3), one end of the bonding wire (3) is welded to the PAD (7);
  • a lead frame (8), the lead frame (8) is arranged on the lamp bead support (1), and is welded to the other end of the bonding wire (3), so as to realize a low curvature of the bonding wire (3);
  • the first layer of anti-reflection glue (5) is set to the bottom of the lamp bead bracket (1) to cover the functional area;
  • the second layer of anti-reflection glue (6) set to cover the bonding wire (3) and the PAD (7);
  • a luminous hole (4), the luminous hole (4) is located on the RCLED chip (2), and is not covered by the first layer of anti-reflection glue (5) and the second layer of anti-reflection glue (6).
  • Fig. 1 is the flowchart of a kind of RCLED lamp bead encapsulation process of the present invention
  • FIG. 2 is a cross-sectional view of the structure of an RCLED lamp bead in an RCLED lamp bead packaging process according to the present invention.
  • An RCLED lamp bead packaging process specifically includes the following steps:
  • Step 1 apply the crystal glue, put the crystal glue into the designated position of the lamp bead bracket (1), and the lamp bead bracket (1) includes the lead frame (8);
  • Step 2 install the chip, put the RCLED chip (2) into the glue dispensing area of the lamp bead bracket, the RCLED chip (2) includes the light-emitting hole (4), PAD (7);
  • Step 3 baking to solidify the crystal-bonding glue, the crystal-bonding glue is closely combined with the pins of the RCLED chip (2) and fixes the RCLED chip (2);
  • Step 4 welding the bonding wire (3), the bonding wire (3) connects the lead frame (8) to the PAD (7);
  • Step 5 apply the first layer of anti-reflection glue (5), and apply the first layer of anti-reflection glue (5) on the bottom of the lamp bead bracket (1) to cover the functional area, but not the front of the RCLED chip (2) , cannot cover the luminescent hole (4) of the RCLED chip (2);
  • Step 6 baking, put the RCLED lamp beads with the first layer of anti-reflection glue (5) in the oven for baking, so that the first layer of anti-reflection glue (5) is cured;
  • Step seven point the second layer of anti-reflection glue (6), so that the second layer of anti-reflection glue (6) covers the bonding wire (3), PAD (7), but cannot cover the light-emitting hole (4);
  • Step 8 baking, put the RCLED lamp beads with the second layer of anti-reflection glue (6) into the oven for baking, so that the second layer of anti-reflection glue (6) is cured;
  • Step 9 test, put the packaged RCLED lamp beads on the test bench to test the luminescence and reflection effects.
  • the crystal-bonding glue is silver glue.
  • step 4 when welding the bonding wire (3), the lead frame (8) is the first soldering point, and the PAD (7) of the RCLED chip (2) is the second soldering point, so that the bonding wire (3) The arc is lower.
  • the viscosity of the first layer of anti-reflection glue (5) is 100CP-500CP.
  • the baking temperature of the first layer of anti-reflection glue (5) is 120°C-180°C.
  • the baking time of the first layer of anti-reflection glue (5) is 90 minutes to 130 minutes.
  • the viscosity of the second layer of anti-reflection glue (6) is 15000CP-25000CP.
  • the second layer of anti-reflection glue (6) is the same glue as the first layer of anti-reflection glue (5), and its color is black.
  • the baking temperature of the second layer of anti-reflection glue (6) is 110°C-160°C.
  • the baking time of the second layer of anti-reflection glue (6) is 70 minutes to 120 minutes.
  • a volumetric metering dispensing valve is used to control and accurately control the dispensing amount.
  • a kind of RCLED lamp bead packaging process of the present invention by dotting anti-reflection glue on the corresponding area of the RCLED lamp bead, the part that can reflect light in the RCLED lamp bead is blocked, effectively eliminating the reflective effect of the RCLED lamp bead, and improving the emission of the RCLED lamp bead
  • the effect of the light spot makes the light spot clearer and more precise.
  • the lead frame (8) is the first soldering point
  • the PAD (7) of the RCLED chip (2) is the second soldering point
  • the arc of the bonding wire (3) is lower, which can effectively Reduce the thickness of the anti-reflection glue, so that the lamp beads have a good shape, reduce the amount of glue dispensed, save production costs, and because the thickness of the anti-reflection glue is small, it can further prevent the anti-reflection glue from shining on the RCLED chip (2) Holes are covered.
  • the volumetric metering dispensing valve is used to precisely control the dispensing amount.
  • the first layer of anti-reflective adhesive (5) has better fluidity , can flow naturally and quickly fill the designated area.
  • the volumetric metering dispensing valve is used to precisely control the dispensing amount.
  • the viscosity is 15000CP-25000CP, the fluidity of the second layer of anti-reflective adhesive (6) is poor. It can ensure that the second layer of anti-reflection glue (6) covers the bonding wire and the upper part of the RCLED chip (2) and does not block the light-emitting hole.
  • the present invention proposes an RCLED lamp bead packaged by the method, which includes: a lamp bead bracket (1);
  • An RCLED chip (2), the RCLED chip (2) is located in the lamp bead bracket (1);
  • PAD (7) the PAD (7) is set on the RCLED chip (2);
  • a bonding wire (3), one end of the bonding wire (3) is welded to the PAD (7);
  • a lead frame (8), the lead frame (8) is arranged on the lamp bead support (1), and is welded to the other end of the bonding wire (3), so as to realize a low curvature of the bonding wire (3);
  • the first layer of anti-reflection glue (5) is set to the bottom of the lamp bead bracket (1) to cover the functional area;
  • the second layer of anti-reflection glue (6) set to cover the bonding wire (3) and the PAD (7);
  • a luminous hole (4), the luminous hole (4) is located on the RCLED chip (2), and is not covered by the first layer of anti-reflection glue (5) and the second layer of anti-reflection glue (6).

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种RCLED灯珠封装工艺及所述方法封装的RCLED灯珠，该方法包括如下步骤：点固晶胶、装RCLED芯片（2）、烘烤、焊接键合导线（3）、点第一层防反射胶（5）、烘烤、点第二层防反射胶（6）、烘烤、测试，通过在RCLED灯珠的相应区域点第一层防反射胶（5）和第二层防反射胶（6），将RCLED灯珠内能反光的部分进行遮挡，有效消除RCLED灯珠的反光效应，提高RCLED灯珠发射光点的效果，使光点更加清晰、精确。第一层防反射胶（5）的粘度具有一定的流动性，可使第一层防反射胶（5）迅速填满指定区域，生产效率高。第二层防反射胶（6）的粘度较高，点胶后流动缓慢，提高点胶精度，能有效防止第二层防反射胶（6）遮挡RCLED芯片（2）的发光孔（4）。在焊接键合导线（3）时，灯珠支架（1）为第一焊点，RCLED芯片（2）的PAD（7）为第二焊点，使键合导线（3）弧度更低，使灯珠具有良好的外形的同时，减小点胶量，节约生产成本。

Description

一种RCLED灯珠封装工艺及所述方法封装的RCLED灯珠 技术领域
本发明涉及灯珠封装技术领域，具体涉及一种RCLED灯珠封装工艺。
背景技术
RCLED，即共振腔发光二极管，英文全称是“Resonant Cavity Light Emitting Diode”，是一种新型的发光二极管结构，同时具备了传统LED和垂直腔面激光器(VCSEL)两者的优点，通过其微腔效应作用，改变了有源区自发辐射的模式，进而对辐射光谱的频率和角度作出限制，可以大大提高内、外量子效率，是一种制备高亮LED非常优异的结构。
由于RCLED的优点，在瞄准镜等领域通常会使用RCLED作为发射光源。但在RCLED发出的光通过透镜时，有部分光会被透镜反射，而被透镜反射回的光点又会被RCLED灯珠内的功能区、键合导线再次反射，对发射出的RCLED光点造成影响，形成光斑或重影，严重影响光点的整体效果。
传统的LED灯珠封装工艺无法消除上面所述的反射效应。因此需要提出一种新的RCLED灯珠封装工艺，消除RCLED灯珠的反射效应，进而解决光斑或重影对光点的影响，提高RCLED灯珠发射光点的效果，使光点更加清晰、精确。
发明内容
本发明的主要目的在于提供一种RCLED灯珠封装工艺，消除RCLED灯珠的反射效应，进而解决光斑或重影对光点的影响，提高RCLED灯珠发射光点的效果，使光点更加清晰、精确。
为实现上述目的，本发明采取的技术方案为：
一种RCLED灯珠封装工艺，该工艺具体包括如下步骤：
步骤一，点固晶胶，将固晶胶点入灯珠支架的指定位置，所述灯珠支架包括引线框架；
步骤二，装芯片，将RCLED芯片放入灯珠支架的点胶区域,所述RCLED芯片包括发光孔、PAD；
步骤三，烘烤，使固晶胶凝固，固晶胶与所述RCLED芯片的引脚紧密结合并将所述RCLED芯片固定；
步骤四，焊接键合导线，所述键合导线将所述灯珠支架与所述PAD相连；
步骤五，点第一层防反射胶，将第一层防反射胶点在所述灯珠支架底部，盖住功能区，但不能盖住所述RCLED芯片的正面，不能盖住所述RCLED芯片的发光孔；
步骤六，烘烤，将点完第一层防反射胶的RCLED灯珠放入烤箱进行烘烤，使第一层防反射胶固化；
步骤七，点第二层防反射胶，使第二层防反射胶盖住键合导线、所述PAD，但不能盖住所述发光孔；
步骤八，烘烤，将点完第二层防反射胶的RCLED灯珠放入烤箱进行烘烤，使第二层防反射胶固化；
步骤九，测试，将封装好的RCLED灯珠放到测试台进行发光及反射效应测试。
作为本发明的一种优选方案，所述步骤一中，固晶胶是银胶。
作为本发明的一种优选方案，所述步骤四中，焊接所述键合导线时，引线框架为第一焊点，RCLED芯片的PAD为第二焊点，使所述键合导线的弧度更低。
作为本发明的一种优选方案，所述步骤五中，第一层防反射胶的粘度为100CP-500CP。
作为本发明的一种优选方案，步骤六中，第一层防反射胶的烘烤温度是120℃-180℃。
作为本发明的一种优选方案，步骤六中，第一层防反射胶的烘烤时间是90分钟-130分钟。
作为本发明的一种优选方案，所述步骤七中，第二层防反射胶的粘度为15000CP-25000CP。
作为本发明的一种优选方案，所述步骤七中，第二层防反射胶与第一层防反射胶(5)是同一种胶，颜色为黑色。
作为本发明的一种优选方案，所述步骤七中，第二层防反射胶的烘烤温度是110℃-160℃。
作为本发明的一种优选方案，所述步骤七中，第二层防反射胶烘烤时间是70分钟-120分钟。
作为本发明的一种优选方案，所述步骤五、步骤七中，在点第一层防反射胶、第二层防反射胶时，采用容积计量式点胶阀控制精确控制点胶量。
与现有技术相比，本发明具有如下有益效果：
本发明提出的一种RCLED灯珠封装工艺，通过在RCLED灯珠的相应区域点防反射胶，将RCLED灯珠内能反光的部分进行遮挡，有效消除RCLED灯珠的反光效应，提高RCLED灯珠发射光点的效果，使光点更加清晰、精确；
本发明提出的一种RCLED灯珠封装工艺，第一层防反射胶的粘度具有一定的流动性，可使防反射胶迅速填满指定区域，生产效率高；
本发明提出的一种RCLED灯珠封装工艺，第二层防反射胶的粘度较高，点胶后流动缓慢，提高点胶精度，能有效防止防反射胶遮挡RCLED芯片发光孔；
本发明提出的一种RCLED灯珠封装工艺，焊接键合导线时，引线框架为第一焊点，RCLED芯片的PAD为第二焊点，使键合导线的弧度更低，能有效减小防反射胶的厚度，使灯珠具有良好的外形的同时，减小点胶量，节约生产成本，而且由于防反射胶的厚度小，能进一步避免防反射胶对RCLED芯片发光孔进行遮挡。
本发明提出一种通过所述方法封装的RCLED灯珠，其中包括：一灯珠支架(1)；
RCLED芯片(2)，所述RCLED芯片(2)位于所述灯珠支架(1)中；
PAD(7)，所述PAD(7)设置在所述RCLED芯片(2)上；
键合导线(3)，所述键合导线(3)一端与所述PAD(7)焊接；
引线框架(8)，所述引线框架(8)设置在所述灯珠支架(1)上，与所述键合导线(3)另一端焊接，以实现键合导线(3)的弧度低；
第一层防反射胶(5)，设置到所述灯珠支架(1)底部，以盖住功能区；
第二层防反射胶(6)，设置盖住所述键合导线(3)、所述PAD(7)；
发光孔(4)，所述发光孔(4)位于RCLED芯片(2)上，不被第一层防反射胶(5)和第二层防反射胶(6)覆盖。
附图说明
图1为本发明一种RCLED灯珠封装工艺的流程图；
图2为本发明一种RCLED灯珠封装工艺中RCLED灯珠结构剖视图。
主要元件符号说明如下：
灯珠支架(1)、RCLED芯片(2)、键合导线(3)、发光孔(4)、第一层防反射胶(5)、二层防反射胶(6)、PAD(7)、引线框架(8)。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施方式，进一步阐述本发明。
需要说明的是，本文所使用的术语“第一”、“第二”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
一种RCLED灯珠封装工艺，该工艺具体包括如下步骤：
步骤一，点固晶胶，将固晶胶点入灯珠支架(1)的指定位置，灯珠支架(1)包括引线框架(8)；
步骤二，装芯片，将RCLED芯片(2)放入灯珠支架的点胶区域，RCLED芯片(2)包括发光孔(4)、PAD(7)；
步骤三，烘烤，使固晶胶凝固，固晶胶与所述RCLED芯片(2)的引脚紧密结合并将所述RCLED芯片(2)固定；
步骤四，焊接键合导线(3)，键合导线(3)将引线框架(8)与PAD(7)相连；
步骤五，点第一层防反射胶(5)，将第一层防反射胶(5)点在灯珠支架(1)底部，盖住功 能区，但不能盖住RCLED芯片(2)的正面，不能盖住RCLED芯片(2)的发光孔(4)；
步骤六，烘烤，将点完第一层防反射胶(5)的RCLED灯珠放入烤箱进行烘烤，使第一层防反射胶(5)固化；
步骤七，点第二层防反射胶(6)，使第二层防反射胶(6)盖住键合导线(3)、PAD(7)，但不能盖住发光孔(4)；
步骤八，烘烤，将点完第二层防反射胶(6)的RCLED灯珠放入烤箱进行烘烤，使第二层防反射胶(6)固化；
步骤九，测试，将封装好的RCLED灯珠放到测试台进行发光及反射效应测试。
优选的，步骤一中，固晶胶是银胶。
优选的，步骤四中，焊接键合导线(3)时，引线框架(8)为第一焊点，RCLED芯片(2)的PAD(7)为第二焊点，使键合导线(3)的弧度更低。
优选的，步骤五中，第一层防反射胶(5)的粘度为100CP-500CP。
优选的，第一层防反射胶(5)的烘烤温度是120℃-180℃。
优选的，步骤六中，第一层防反射胶(5)的烘烤时间是90分钟-130分钟。
优选的，步骤七中，第二层防反射胶(6)的粘度为15000CP-25000CP。
优选的，步骤七中，第二层防反射胶(6)与第一层防反射胶(5)是同一种胶，颜色为黑色。
优选的，步骤七中，第二层防反射胶(6)的烘烤温度是110℃-160℃。
优选的，步骤七中，第二层防反射胶(6)烘烤时间是70分钟-120分钟。
优选的，步骤五、步骤七中，在点第一层防反射胶(5)、第二层防反射胶(6)时，采用容积计量式点胶阀控制精确控制点胶量。
本发明的一种RCLED灯珠封装工艺，通过在RCLED灯珠的相应区域点防反射胶，将RCLED灯珠内能反光的部分进行遮挡，有效消除RCLED灯珠的反光效应，提高RCLED灯珠发射光点的效果，使光点更加清晰、精确。焊接键合导线(3)时，引线框架(8)为第一焊点，RCLED芯片(2)的PAD(7)为第二焊点，使键合导线(3)的弧度更低，能有效减小防反射胶的厚度，使灯珠具有良好的外形的同时，减小点胶量，节约生产成本，而且由于防反射 胶的厚度小，能进一步避免防反射胶对RCLED芯片(2)发光孔进行遮挡。在点第一层防反射胶(5)时，通过容积计量式点胶阀精准的控制点胶量，在粘度为100CP-500CP时，第一层防反射胶(5)具有较好的流动性，能自然流动迅速填满指定区域。在点第二层防反射胶(6)时，通过容积计量式点胶阀精准的控制点胶量，在粘度为15000CP-25000CP时，第二层防反射胶(6)的流动性较差，能保证第二层防反射胶(6)对键合导线及RCLED芯片(2)的上部进行覆盖并且不遮挡发光孔。
本发明提出一种通过所述方法封装的RCLED灯珠，其中包括：一灯珠支架(1)；
RCLED芯片(2)，所述RCLED芯片(2)位于所述灯珠支架(1)中；
PAD(7)，所述PAD(7)设置在所述RCLED芯片(2)上；
键合导线(3)，所述键合导线(3)一端与所述PAD(7)焊接；
引线框架(8)，所述引线框架(8)设置在所述灯珠支架(1)上，与所述键合导线(3)另一端焊接，以实现键合导线(3)的弧度低；
第一层防反射胶(5)，设置到所述灯珠支架(1)底部，以盖住功能区；
第二层防反射胶(6)，设置盖住所述键合导线(3)、所述PAD(7)；
发光孔(4)，所述发光孔(4)位于RCLED芯片(2)上，不被第一层防反射胶(5)和第二层防反射胶(6)覆盖。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (12)

  1. 一种RCLED灯珠封装工艺，其特征在于：该工艺具体包括如下步骤：
    步骤一，点固晶胶，将固晶胶点入灯珠支架(1)的指定位置，所述灯珠支架包括引线框架(8)；
    步骤二，装芯片，将RCLED芯片(2)放入灯珠支架的点胶区域，所述RCLED芯片(2)包括发光孔(4)、PAD(7)；
    步骤三，烘烤，使固晶胶凝固，固晶胶与所述RCLED芯片(2)的引脚紧密结合并将所述RCLED芯片(2)固定；
    步骤四，焊接键合导线(3)，所述键合导线(3)将所述灯珠支架(1)与所述PAD(7)相连；
    步骤五，点第一层防反射胶(5)，将第一层防反射胶(5)点在所述灯珠支架(1)底部，盖住功能区，但不能盖住所述RCLED芯片(2)的正面，不能盖住所述RCLED芯片(2)的发光孔(4)；
    步骤六，烘烤，将点完第一层防反射胶(5)的RCLED灯珠放入烤箱进行烘烤，使第一层防反射胶(5)固化；
    步骤七，点第二层防反射胶(6)，使第二层防反射胶(6)盖住所述键合导线(3)、所述PAD(7)，但不能盖住所述发光孔(4)；
    步骤八，烘烤，将点完第二层防反射胶(6)的RCLED灯珠放入烤箱进行烘烤，使第二层防反射胶(6)固化；
    步骤九，测试，将封装好的RCLED灯珠放到测试台进行发光及反射效应测试。
  2. 根据权利要求1所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤一中，固晶胶是银胶。
  3. 根据权利要求1所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤四中，焊接所述键合导线(3)时，所述支架(1)为第一焊点，所述RCLED芯片(2)的PAD(7)为第二焊点，使所述键合导线(3)的弧度更低。
  4. 根据权利要求1所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤五中，第一层防反射胶(5)的粘度为100CP-500CP。
  5. 根据权利要求4所述的一种RCLED灯珠封装工艺，其特征在于：步骤六中，第一层防反射胶(5)的烘烤温度是120℃-180℃。
  6. 根据权利要求4所述的一种RCLED灯珠封装工艺，其特征在于：步骤六中，第一层防反射胶(5)的烘烤时间是90分钟-130分钟。
  7. 根据权利要求1所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤七中，第二层防反射胶(6)的粘度为15000CP-25000CP。
  8. 根据权利要求7所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤七中，第二层防反射胶(6)与第一层防反射胶(5)是同一种胶，颜色为黑色。
  9. 根据权利要求7所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤七中，第二层防反射胶(6)的烘烤温度是110℃-160℃。
  10. 根据权利要求7所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤七中，第二层防反射胶(6)烘烤时间是70分钟-120分钟。
  11. 根据权利要求1所述的一种RCLED灯珠封装工艺，其特征在于：所述步骤五、步骤七中，在点第一层防反射胶(5)、第二层防反射胶(6)时，采用容积计量式点胶阀控制精确控制点胶量。
  12. 一种通过所述权利要求1-11所述方法封装的RCLED灯珠，其特征在于：
    一灯珠支架(1)；
    RCLED芯片(2)，所述RCLED芯片(2)位于所述灯珠支架(1)中；
    PAD(7)，所述PAD(7)设置在所述RCLED芯片(2)上；
    键合导线(3)，所述键合导线(3)一端与所述PAD(7)焊接；
    引线框架(8)，所述引线框架(8)设置在所述灯珠支架(1)上，与所述键合导线(3)另一端焊接，以实现键合导线(3)的弧度低；
    第一层防反射胶(5)，设置到所述灯珠支架(1)底部，以盖住功能区；
    第二层防反射胶(6)，设置盖住所述键合导线(3)、所述PAD(7)；
    发光孔(4)，所述发光孔(4)位于RCLED芯片(2)上，不被第一层防反射胶(5)和第二层防 反射胶(6)覆盖。
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