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WO2022252707A1 - Method and apparatus for processing and controlling semiconductor device, and high-energy particle beam photolithography device - Google Patents

Method and apparatus for processing and controlling semiconductor device, and high-energy particle beam photolithography device Download PDF

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Publication number
WO2022252707A1
WO2022252707A1 PCT/CN2022/077612 CN2022077612W WO2022252707A1 WO 2022252707 A1 WO2022252707 A1 WO 2022252707A1 CN 2022077612 W CN2022077612 W CN 2022077612W WO 2022252707 A1 WO2022252707 A1 WO 2022252707A1
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WO
WIPO (PCT)
Prior art keywords
particle beam
energy particle
material layer
layer
grayscale
Prior art date
Application number
PCT/CN2022/077612
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French (fr)
Chinese (zh)
Inventor
张启华
简维廷
洪流
张勇为
袁元
蒋军浩
张洁
Original Assignee
袁元
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 袁元 filed Critical 袁元
Priority to PCT/CN2022/077612 priority Critical patent/WO2022252707A1/en
Priority to CN202210258895.3A priority patent/CN114927410B/en
Publication of WO2022252707A1 publication Critical patent/WO2022252707A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Definitions

  • the embodiments of the present application relate to the technical field of semiconductor processing, and in particular, to a processing control method and device for semiconductor devices, and high-energy particle beam lithography equipment.
  • the high-energy particle beams in this application can be ion beams, electron beams, laser beams, X-rays, etc., among which high-energy focused ion beams are used in the experiment.
  • the high-energy particle beam has a smaller wavelength than ordinary optical systems, which can improve the resolution of layout transfer and is suitable for making smaller-sized devices.
  • the DUV lithography machine is only suitable for the production of devices with a feature size larger than 7nm; for the production of devices below 7nm, EUV must be introduced.
  • the high-energy particle beam has a smaller wavelength than EUV.
  • the embodiment of the present application provides a semiconductor device processing control method, device and high-energy particle beam lithography equipment, which can complete the processing of the semiconductor device without making an integrated circuit mask and improve the processing efficiency.
  • the technical solution is as follows:
  • an embodiment of the present application provides a processing control method for a semiconductor device, including:
  • the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layout corresponds to the pattern of one or more material layers of the target semiconductor device;
  • a layer of hard mask is set on the layer of material layer, according to the high-energy particle beam corresponding to each pixel in the corresponding grayscale picture/digital file Processing parameters, control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engrave the pattern corresponding to the grayscale picture/digital file to the material layer, and then remove the material layer For the hard mask on the material layer, the next material layer is sequentially fabricated, and the above steps are repeated until the hard mask on the last material layer is removed to obtain the target semiconductor device.
  • an embodiment of the present application provides a processing control device for a semiconductor device, including:
  • the first acquisition module acquires the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of materials of the target semiconductor device layer pattern;
  • the layout conversion module is used to convert several layers of integrated circuit sub-layouts into several layers of grayscale images/digital files in a preset format
  • the second acquisition module is used to obtain the high-energy particle beam processing parameters corresponding to each pixel in the gray-scale picture/digital file according to the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value ;
  • the processing control module is used to set a layer of hard mask on the material layer after each layer of the material layer is produced on the target substrate, according to each pixel in the corresponding grayscale image/digital file
  • the high-energy particle beam processing parameters corresponding to the points control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer of this layer, and engrave the pattern corresponding to the grayscale image/digital file to this layer material layer, and then remove the hard mask on the material layer, sequentially fabricate the next layer of the material layer, repeat the above steps until the hard mask on the last layer of the material layer is removed, and obtain The target semiconductor device.
  • an embodiment of the present application provides a high-energy particle beam lithography apparatus, including: a particle beam generator, a particle beam controller, a working chamber, a working stage, a processor, a memory, and a and a computer program that can run on the processor, the particle beam generator, the particle beam controller, the work chamber and the work platform respectively establish data connections with the processor, the When the processor executes the computer program, the steps of the semiconductor device processing control method according to the first aspect are realized.
  • the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device.
  • the pattern of the layer material layer convert several layers of the integrated circuit sub-layout into several layers of grayscale pictures/digital files in the preset format; according to the preset high-energy particle beam processing parameters and the gray value/target parameter value Corresponding relationship, obtain the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file;
  • set a layer on the material layer Layer hard mask according to the high-energy particle beam processing parameters corresponding to each pixel in the corresponding grayscale image/digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the layer
  • engrave the pattern corresponding to the grayscale image/digital file to the material layer then remove the hard mask on the material layer, make the next material layer in turn, and repeat the above steps , until the hard mask on the last layer of the material layer is removed to obtain the target semiconductor device.
  • This semiconductor device processing control method not only does not need to make multiple masks, which reduces processing costs, but also can flexibly modify the layout of integrated circuits to improve processing efficiency.
  • a hard mask is set on the material layer, and the hard mask is removed after engraving, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
  • FIG. 1 is a schematic flow chart of a processing control method for a semiconductor device provided by an embodiment of the present application
  • Figure 2 is a schematic diagram of the principle of narrowing the linewidth of a high-energy particle beam provided by an embodiment of the present application;
  • FIG. 3 is a schematic flow chart of S104 in a semiconductor device processing control method provided by an embodiment of the present application
  • FIG. 4 is a schematic flow chart of S104 in a semiconductor device processing control method provided by another embodiment of the present application.
  • FIG. 5 is a schematic flow chart of a semiconductor device processing control method provided by another embodiment of the present application.
  • FIG. 6 is a schematic diagram of a grayscale image corresponding to four MOS tube parallel integrated circuit layouts provided by an embodiment of the present application.
  • FIG. 7 is a schematic flow chart of S207 in a semiconductor device processing control method provided by another embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a processing control device for a semiconductor device provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a high-energy particle beam lithography device provided by an embodiment of the present application.
  • first, second, third, etc. may be used in this application to describe various information, the information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of the present application, first information may also be called second information, and similarly, second information may also be called first information.
  • first information may also be called second information, and similarly, second information may also be called first information.
  • second information may also be called first information.
  • the words "if”/"if” as used herein may be interpreted as “at” or "when” or "in response to a determination”.
  • FIG. 1 is a schematic flow chart of a method for processing a semiconductor device provided by an embodiment of the present application. The method includes the following steps:
  • S101 Obtain an integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device .
  • the execution subject of the processing control method of a semiconductor device may be a high-energy particle beam lithography equipment, or a component of a high-energy particle beam lithography equipment, such as its internal processor or Microprocessor, etc.; in another optional embodiment, the execution subject of the processing control method of the semiconductor device may be an external device that establishes a data connection with the high-energy particle beam lithography equipment, or it may be a component in the external device part.
  • the processing control method of the semiconductor device is executed by a high-energy particle beam lithography equipment.
  • the high-energy particle beam lithography equipment obtains the integrated circuit layout corresponding to the target semiconductor device.
  • the target semiconductor device may be any type of semiconductor device, and its specific type is not limited here.
  • the integrated circuit layout refers to mapping the circuit design circuit diagram or circuit description language to the physical description level.
  • the integrated circuit layout includes the device type, device size, relative position between devices, and the connection relationship between each device, etc. relevant physical information.
  • the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device.
  • the material layer includes, but is not limited to, an active layer, an insulating layer, a polysilicon gate layer, a metal layer, and the like.
  • S102 Convert several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
  • the high-energy particle beam lithography equipment converts several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
  • the preset format can be TIF format, and in other optional embodiments, for grayscale pictures, the preset format can be high energy particle beam lithography Other image formats that the device can recognize and process.
  • the grayscale value of the pixel in the grayscale picture is 0 to 255, the grayscale value of 0 indicates that the brightness of the pixel is low, and the human body subjectively perceives it as black, and the grayscale value of 255 indicates that the brightness of the pixel is relatively high. Subjective visual perception is white.
  • the digital file may be other types of files than the grayscale image, such as CAD files, DAT format files, and TIFF format files, etc., which are not limited here.
  • S103 Acquire the high-energy particle beam processing parameters corresponding to each pixel in the grayscale picture/digital file according to the preset correspondence between high-energy particle beam processing parameters and grayscale values/target parameter values; wherein, the The target parameter value is the parameter value used to embody the information stored in the digital file.
  • the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value may be preset and stored in the high-energy particle beam lithography equipment. In another optional embodiment, the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value can be preset and stored in the cloud or the host computer, and then downloaded when used into the high energy particle beam lithography equipment.
  • the corresponding relationship between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value is also different.
  • the corresponding relationship between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value can be found according to the identification of the semiconductor device, or according to the material layer Find the correspondence between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value.
  • the third-party semiconductor device design manufacturer can upload the designed semiconductor device identification or material identification to the cloud, and configure the corresponding relationship between high-energy particle beam processing parameters and gray value/target parameter value.
  • the corresponding relationship between them can enable the high-energy particle beam lithography equipment to control the high-energy particle beam lithography equipment to complete the processing of more types of semiconductor devices and meet the needs of more third-party customers.
  • the high-energy particle beam processing parameters include the high-energy particle beam acceleration voltage and/or the high-energy particle beam action time.
  • the high-energy particle beam lithography equipment Correspondence between particle beam processing parameters and grayscale values/target parameter values, obtaining high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file, specifically as follows:
  • the high-energy particle beam lithography equipment obtains the high-energy particle beam acceleration voltage corresponding to each pixel in the gray-scale picture/digital file according to the gray-scale value/target parameter value of the pixel in the gray-scale picture/digital file, when the The smaller the grayscale value/target parameter value of the pixel in the grayscale picture/digital file is, the higher the high-energy particle beam acceleration voltage of the high-energy particle beam lithography equipment is.
  • the pixel in the grayscale picture/digital file When the pixel in the grayscale picture/digital file When the gray value of the point/target parameter value is larger, the high-energy particle beam acceleration voltage of the high-energy particle beam lithography equipment is lowered. The higher the accelerating voltage of the high-energy particle beam, the higher the kinetic energy of the emitted high-energy particle beam. Therefore, in the same time, more materials can be engraved and deeper material grooves can be obtained.
  • the high-energy particle beam lithography equipment obtains the high-energy particle beam action time corresponding to each pixel in the gray-scale picture/digital file according to the gray-scale value/target parameter value of the pixel in the gray-scale picture/digital file,
  • the grayscale value/target parameter value of the pixel in the grayscale picture/digital file is smaller, the longer the high-energy particle beam action time of the high-energy particle beam lithography equipment is, when the grayscale picture/digital file
  • the greater the gray value of the middle pixel/target parameter value the shorter the action time of the high-energy particle beam of the high-energy particle beam lithography equipment.
  • the high-energy particle beam lithography equipment obtains the gray-scale mean value/target parameter mean value of all pixels in the gray-scale picture/digital file, and when the gray-scale mean value/target parameter mean value is smaller, the high-energy particle beam light
  • the high-energy particle beam action time corresponding to each pixel in the grayscale picture/digital file when the grayscale value/target parameter value of the pixel point in the grayscale picture/digital file is smaller, the high-energy particle beam photolithography
  • a layer of hard mask is set on the material layer, and according to the high-energy corresponding to each pixel in the corresponding grayscale image/digital file, Particle beam processing parameters, controlling the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engraving the pattern corresponding to the grayscale image/digital file to the material layer, and then removing the hard mask on the material layer, making the next material layer in turn, and repeating the above steps until the hard mask on the last material layer is removed to obtain the target semiconductor device.
  • a layer of hard mask is set on the material layer, and each pixel in the corresponding grayscale image/digital file
  • the high-energy particle beam processing parameters corresponding to the points control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer of this layer, and engrave the pattern corresponding to the grayscale image/digital file to this layer material layer, then remove the hard mask on the layer of material layer, sequentially make the next layer of the material layer, repeatedly carry out the setting of the hard mask, the engraving of the next layer of material layer and the hard mask removing until the hard mask on the last material layer is removed to obtain the target semiconductor device
  • the high-energy particle beam lithography equipment sets a layer of hard mask on the material layer before engraving the pattern corresponding to each layer of the grayscale image/digital file to the corresponding material layer, and after the engraving is completed The layer of hard mask is then removed, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
  • FIG. 2 is a schematic diagram of the principle of narrowing the linewidth of a high-energy particle beam provided by an embodiment of the present application.
  • the shape of the top of the high-energy particle beam emitted by the high-energy particle beam lithography equipment is similar to that of a cone. Therefore, when the high-energy particle beam acts on the material layer, the gully formed in the material layer is also in the shape of a cone.
  • the schematic diagram on the left side of Figure 2 it can be seen that after the high-energy particle beam acts on the material layer, the width of the ravine generated on the surface of the material is A, that is, the line width of the high-energy particle beam is A.
  • the schematic diagram on the right side of Figure 2 is a schematic diagram of the principle of narrowing the linewidth of a high-energy particle beam provided by an embodiment of the present application.
  • the shape of the top of the high-energy particle beam emitted by the high-energy particle beam lithography equipment is similar to that of a cone. Therefore, when the
  • the high-energy particle beam will first act on the hard mask and then on the material layer. After the hard mask is removed after engraving, the surface of the material
  • the width of the generated trench is B, that is, the line width of the high-energy particle beam is B.
  • the hard mask may be a silicon nitride film, a silicon oxide film, a carbon film, a platinum film or a tungsten film, and its specific material is not limited here.
  • removing the hard mask on the material layer in step S104 includes steps S1041-S1043, specifically as follows:
  • S1041 Control the high-energy particle beam lithography equipment to emit a high-energy particle beam to act on the hard mask, and bombard and remove the hard mask.
  • S1042 Control the high-energy particle beam lithography equipment to spray an etching reagent on the hard mask, and remove the hard mask by etching.
  • CMP Chemical mechanical polishing
  • the chemical mechanical polishing device is integrated in the high-energy particle beam lithography equipment.
  • Steps S1041 to S1043 respectively correspond to different ways of removing the hard mask, which can be reasonably selected according to differences in the processed semiconductor device or the material of the material layer, and are not limited here.
  • the material layer is a material layer deposited by controlling high-energy particle beam lithography equipment. Specifically, please refer to FIG. 4 .
  • step S104 includes steps S1044 ⁇ S1045, specifically as follows:
  • S1044 Obtain a material gas corresponding to the material layer and a corresponding deposition area of the material layer on the target substrate.
  • the material gas may be one gas or multiple gases, which are different according to the difference of material layers.
  • each layer of material layer includes multiple materials, for example, a layer of oxide oxide is first coated on the surface of single crystal silicon. Silicon, and then a layer of tantalum is plated on the surface of silicon oxide, so a variety of material gases are also required when preparing such a material layer.
  • S1045 Control the high-energy particle beam lithography equipment to spray the material gas in the deposition area, so that the material gas is decomposed and deposited in the deposition area, and the fabrication of the material layer is completed.
  • the gas injection device in the high-energy particle beam lithography equipment sprays the material gas in the deposition area, and at the same time emits high-energy particle beams to decompose the material gas, so that The decomposed material gas is deposited in the deposition area to complete the fabrication of the material layer.
  • the high-energy particle beam lithography equipment can also be based on the preset optimal thickness range and/or the preset optimal flatness range controlling the high-energy particle beam to process the material layer, so that the current thickness and/or current flatness of the material layer are respectively within the preset optimal thickness range and the preset optimal flatness range, whereby, the subsequent engraving effect is further improved, and the processing of semiconductor devices is optimized.
  • the preset optimized thickness range is 1 nm to 500 nm
  • the preset optimized flatness range is 0.5 nm to 5 nm.
  • the processing accuracy requirements for engraving are different.
  • the high-energy particle beam lithography equipment can control the electromagnetic lens to shrink the high-energy particle beam according to the preset engraving size threshold, so that the engraving pixel size of the high-energy particle beam is smaller than the engraving size threshold.
  • the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device.
  • the pattern of the layer material layer convert several layers of the integrated circuit sub-layout into several layers of grayscale pictures/digital files in the preset format; according to the preset high-energy particle beam processing parameters and the gray value/target parameter value Corresponding relationship, obtain the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file;
  • set a layer on the material layer Layer hard mask according to the high-energy particle beam processing parameters corresponding to each pixel in the corresponding grayscale image/digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the layer
  • engrave the pattern corresponding to the grayscale image/digital file to the material layer then remove the hard mask on the material layer, make the next material layer in turn, and repeat the above steps , until the hard mask on the last layer of the material layer is removed to obtain the target semiconductor device.
  • This semiconductor device processing control method not only does not need to make multiple masks, which reduces processing costs, but also can flexibly modify the layout of integrated circuits to improve processing efficiency.
  • a hard mask is set on the material layer, and the hard mask is removed after engraving, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
  • FIG. 5 is a schematic flow chart of a processing control method for semiconductor devices provided by another embodiment of the present application, including steps S201-S207, wherein steps S201-S202, S206 are respectively related to step S101 ⁇ S102 and S103 are the same, details are as follows:
  • S201 Obtain an integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device .
  • S202 Transforming several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
  • S203 Obtain the target pixel in the grayscale image/digital file corresponding to the integrated circuit sub-layout of each layer and the coordinates of the target pixel in the grayscale image/digital file; wherein, the target pixel is the pixel whose gray value/target parameter value is lower than the preset threshold.
  • the grayscale image/digital file corresponding to the sub-layout of the integrated circuit there may be some target pixel grayscale values/target parameter values lower than the preset threshold, which indicates that the coordinates of the target pixel points in the corresponding material layer need to be detected. High energy particle beam penetration.
  • the preset threshold is related to the corresponding relationship between the preset high-energy particle beam processing parameters and the gray value/target parameter value, and can be set according to the actual situation, which is not limited here.
  • target pixels with the same coordinates in the gray-scale pictures/digital files corresponding to the integrated circuit sub-layouts of the i to j layers, then these target pixels are the pixels to be adjusted, and by adjusting the grayscale of the pixels to be adjusted Value/target parameter value, so that when engraving the corresponding material layer, engraving is not performed at the coordinates of the pixel to be adjusted.
  • the integrated circuit sub-layout has n layers in total, 1 ⁇ i ⁇ j ⁇ n.
  • FIG. 6 is a schematic diagram of a grayscale image corresponding to an integrated circuit layout of four MOS transistors connected in parallel according to an embodiment of the present application.
  • the layout of the integrated circuit in Fig. 6 includes an active layer, a polysilicon gate layer, a metal layer, and an insulating layer (not shown) on the active layer, a polysilicon gate layer, and an insulating layer (not shown) on the metal layer, an insulating layer, and a polysilicon gate layer
  • S205 Set the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file of the i-th layer to the highest value, or obtain the first value corresponding to the lowest high-energy particle beam processing parameter.
  • Grayscale value/first target parameter value, the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file of the i-th layer is set as the first grayscale value/the first target parameter value A target parameter value.
  • the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file corresponding to the i-th layer of the integrated circuit sub-layout is set to the highest value, so that In this way, when engraving the patterns corresponding to the sub-layouts of the integrated circuits in the i to j layers, the patterns composed of pixels to be adjusted will not be engraved.
  • the high-energy particle beam lithography equipment first acquires the first grayscale value/first target parameter value corresponding to the lowest high-energy particle beam processing parameter.
  • the high-energy particle beam processing parameters include the high-energy particle beam acceleration voltage and/or the high-energy particle beam action time.
  • the corresponding gray value/target when the high-energy particle beam acceleration voltage is 0 or the high-energy particle beam action time is 0
  • the parameter value is the first gray value/the first target parameter value.
  • the first grayscale value/first target parameter value will also be different, and the specific values thereof are not limited here.
  • the high-energy particle beam lithography equipment sets the grayscale value/target parameter value of the pixel to be adjusted to the specified The first grayscale value/first target parameter value, so that when engraving the pattern corresponding to the grayscale picture/digital file of the i-th layer, the composition of the pixels to be adjusted will not be engraved picture of.
  • S206 Acquire the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file according to the preset correspondence between high-energy particle beam processing parameters and grayscale values/target parameter values.
  • a layer of hard mask is set on the material layer, and according to the high-energy corresponding to each pixel in the corresponding grayscale image/digital file, Particle beam processing parameters, controlling the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engraving the pattern corresponding to the grayscale image/digital file to the material layer, and then removing the hard mask on the material layer, making the next material layer in turn, and repeating the above steps until the hard mask on the last material layer is removed to obtain the target semiconductor device.
  • Step S207 is performed in the same manner as step S104.
  • Each layer of material layer is made, and then a layer of hard mask is set, and then the engraving of the pattern corresponding to the sub-layout of the integrated circuit is completed on the material layer, and then the mask is removed. layer hard mask, and finally obtain the target semiconductor device.
  • step S207 includes step S2071 ⁇ S2072, the specific difference process is as follows:
  • S2071 sequentially fabricate the i-th to j-th material layers on the target substrate, and after each layer of the material layer is fabricated, set a layer of the hard mask on the material layer, respectively according to The high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file of the i-j layer, control the high-energy particle beam lithography equipment to emit high-energy particle beams to act on the material layer of the i-j layer , engraving all the patterns in the i-th layer of the grayscale image/digital file except the pattern composed of pixels to be adjusted to the corresponding i-j-th layer of the material layer, and after engraving each layer After the material layer, the hard mask on the material layer is removed.
  • each layer of material layer (layer i to j) is laid in the high-energy particle beam lithography equipment, a layer of hard mask is laid on the layer of material layer, and then, according to the grayscale image/ The high-energy particle beam processing parameters corresponding to each pixel in the digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to act on the material layer, and engrave the grayscale image/digital file corresponding to the integrated circuit sub-layout of this layer All patterns except the pattern composed of pixels to be adjusted are transferred to the material layer, and then the hard mask on the material layer is removed.
  • the high-energy particle beam lithography equipment After the high-energy particle beam lithography equipment removes the hard mask on the material layer of the j-th layer, and then according to the coordinates of the pixels to be adjusted, the high-energy particle beam lithography equipment is controlled to emit high-energy particle beams to act on At the coordinates of the pixels to be adjusted in the jth material layer, the i to jth material layers are penetrated at the coordinates of the pixels to be adjusted.
  • the high-energy particle beam processing parameters that penetrate each material layer can be obtained according to experiments and pre-stored in the high-energy particle beam lithography equipment, and the corresponding high-energy particle beam processing parameters can be found according to the identification of the material layer, thereby obtaining to the processing parameters of the high-energy particle beam that penetrates the i-th layer.
  • the grayscale corresponding to the i-th layer of the integrated circuit sub-layout is obtained.
  • the patterns corresponding to the sub-layout of the integrated circuit described in the first layer are respectively on the i-th to j-th material layers, the pattern composed of pixels to be adjusted will not be engraved.
  • the high-energy particle beam lithography equipment is controlled to emit high-energy particle beams to act on the coordinates of the pixels to be adjusted in the jth material layer, and at the coordinates of the pixels to be adjusted
  • the method penetrates through the i-th material layer to achieve combined engraving, which effectively improves the processing efficiency of semiconductor devices.
  • FIG. 8 is a schematic structural diagram of a processing control device for a semiconductor device provided by an embodiment of the present application.
  • the device can be realized as all or a part of the high-energy particle beam lithography equipment through software, hardware or a combination of the two.
  • the device 8 includes a first acquisition module 81, a layout conversion module 82, a second acquisition module 83 and a processing control module 84:
  • the first acquisition module 81 is configured to acquire the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device. Patterns of multilayer material layers;
  • the layout conversion module 82 is used to convert several layers of integrated circuit sub-layouts into several layers of grayscale images/digital files in preset formats;
  • the second acquisition module 83 is used to obtain the high-energy particle beam processing corresponding to each pixel in the grayscale picture/digital file according to the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value parameter;
  • the processing control module 84 is used to set a layer of hard mask on the material layer after each layer of the material layer is fabricated on the target base material, according to each of the corresponding grayscale pictures/digital files
  • the high-energy particle beam processing parameters corresponding to the pixels control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the material layer, and engrave the pattern corresponding to the grayscale image/digital file to the layer of material, and then remove the hard mask on the material layer, sequentially fabricate the next material layer, and repeat the above steps until the hard mask on the last material layer is removed,
  • the target semiconductor device is obtained.
  • the semiconductor device processing control device provided in the above-mentioned embodiments executes the semiconductor device processing control method, it only uses the division of the above-mentioned functional modules as an example. In practical applications, the above-mentioned functions can be allocated according to needs. It is completed by different functional modules, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above.
  • the semiconductor device processing control device provided in the above embodiments and the semiconductor device processing control method belong to the same concept, and the implementation process thereof is detailed in the method embodiment, and will not be repeated here.
  • the high-energy particle beam lithography equipment 9 may include: a particle beam generator 90, a particle beam controller 91, a working chamber 92, a working stage 93, a processor 94, a memory 95, and a In the memory 95 and the computer program 96 that can run on the processor 94, for example: the processing control program of the semiconductor device; the particle beam generator 90, the particle beam controller 91, the working chamber 92 and The work platforms 93 respectively establish data connections with the processors 94; when the processors 94 execute the computer programs 96, the steps in the above-mentioned method embodiments are implemented, such as steps S101 to S104 shown in FIG. 1 .
  • the processor 94 may include one or more processing cores.
  • the processor 94 uses various interfaces and lines to connect various parts in the high-energy particle beam lithography equipment 9, and runs or executes instructions, programs, code sets or instruction sets stored in the memory 95, and calls the memory 95. Data, perform various functions of the high-energy particle beam lithography equipment 9 and process data.
  • the processor 94 can use digital signal processing (Digital Signal Processing, DSP), field-programmable gate array (Field-Programmable Gate Array, FPGA), Programmable Logic Array (Programble Logic Array, PLA) in at least one hardware form to achieve.
  • DSP Digital Signal Processing
  • FPGA Field-Programmable Gate Array
  • PLA Programmable Logic Array
  • the processor 94 may integrate one or a combination of a central processing unit (Central Processing Unit, CPU), an image processor (Graphics Processing Unit, GPU), a modem, and the like.
  • CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the CPU mainly processes the operating system, user interface and application programs, etc.
  • the GPU is used for rendering and drawing the content that needs to be displayed on the touch screen
  • the modem is used for processing wireless communication. It can be understood that, the above-mentioned modem may also not be integrated into the processor 94, but may be realized by a single chip.
  • the memory 95 may include a random access memory (Random Access Memory, RAM), and may also include a read-only memory (Read-Only Memory).
  • the memory 95 includes a non-transitory computer-readable storage medium.
  • Memory 95 may be used to store instructions, programs, codes, sets of codes or sets of instructions.
  • the memory 95 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing the operating system, instructions for at least one function (such as touch instructions, etc.), and instructions for implementing the above-mentioned various method embodiments. Instructions, etc.; the storage data area can store the data, etc. involved in the above method embodiments.
  • the memory 95 may also be at least one storage device located away from the aforementioned processor 94 .

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Abstract

The present invention relates to a method and apparatus for processing and controlling a semiconductor device, and a high-energy particle beam photolithography device. The method comprises: converting several layers of integrated circuit sub-layouts respectively into grayscale images/digital files; according to the corresponding relationship between high-energy particle beam processing parameters and grayscale values/target parameter values, acquiring a high-energy particle beam processing parameter corresponding to each pixel point in the grayscale images/digital files; after each material layer has been made on a target substrate, providing a layer of hard mask on the material layer; according to the high-energy particle beam processing parameter corresponding to each pixel point in the corresponding grayscale images/digital files, controlling the photolithography device to emit a high-energy particle beam to pass through the hard mask and act upon the material layer; carving a pattern corresponding to each grayscale image/digital file to the material layer, then removing the hard mask on the material layer, sequentially making a next material layer, and repeatedly implementing the described steps until the hard mask on the last material layer is removed, so as to obtain a target semiconductor device. Compared with the prior art, the method can narrow the line width of the high-energy particle beam and improve the processing precision of the semiconductor device. The high-energy particle beam in the present application can be an ion beam, an electron beam, a laser beam, an X-ray, or the like, wherein a high-energy focused ion beam is used in an experiment. The high-energy particle beam has a smaller wavelength than an ordinary optical system, and thus can improve the resolution of layout transfer and is suitable for manufacturing small-size devices.

Description

半导体器件的加工控制方法、装置及高能粒子束光刻设备Process control method and device for semiconductor device, and high-energy particle beam lithography equipment 技术领域technical field
本申请实施例涉及半导体加工技术领域,尤其涉及一种半导体器件的加工控制方法、装置及高能粒子束光刻设备。The embodiments of the present application relate to the technical field of semiconductor processing, and in particular, to a processing control method and device for semiconductor devices, and high-energy particle beam lithography equipment.
背景技术Background technique
在传统的半导体加工技术领域中,往往都是基于集成电路掩膜版与光刻技术的结合,实现将集成电路版图转移至硅基材上,进而完成半导体器件的制造。In the field of traditional semiconductor processing technology, it is often based on the combination of integrated circuit mask and photolithography technology to realize the transfer of the integrated circuit layout to the silicon substrate, and then complete the manufacture of semiconductor devices.
但是,随着对半导体器件的尺寸要求越来越高,支撑光刻技术的光源系统(如EUV光刻机)的制造和集成电路掩膜版的制作变得越发艰难,使用集成电路掩膜版也会使半导体器件的制造成本巨大,并且,若对集成电路版图进行修改或微调,则需要再重新制作掩膜版,致使加工效率低下。However, as the size requirements for semiconductor devices become higher and higher, the manufacture of light source systems (such as EUV lithography machines) supporting lithography technology and the production of integrated circuit masks have become more and more difficult. Using integrated circuit masks It will also make the manufacturing cost of the semiconductor device huge, and if the layout of the integrated circuit is modified or fine-tuned, the mask plate needs to be made again, resulting in low processing efficiency.
本申请中的高能粒子束可以是离子束、电子束、激光束、X射线等,其中实验用到的是高能聚焦离子束。高能粒子束拥有比普通光学系统更小的波长,可以提升版图转移的分辨率,适合于制作更小尺寸的器件。比如DUV光刻机因为波长的限制,只适用于制作特征尺寸大于7nm的器件;对于7nm以下的器件制作,必须要引入EUV。而高能粒子束拥有比EUV更小的波长。The high-energy particle beams in this application can be ion beams, electron beams, laser beams, X-rays, etc., among which high-energy focused ion beams are used in the experiment. The high-energy particle beam has a smaller wavelength than ordinary optical systems, which can improve the resolution of layout transfer and is suitable for making smaller-sized devices. For example, due to the limitation of the wavelength, the DUV lithography machine is only suitable for the production of devices with a feature size larger than 7nm; for the production of devices below 7nm, EUV must be introduced. The high-energy particle beam has a smaller wavelength than EUV.
发明内容Contents of the invention
本申请实施例提供了一种半导体器件的加工控制方法、装置及高能粒子束光刻设备,可以在不制作集成电路掩膜版完成半导体器件的加工处理,提高加工效率,所述技术方案如下:The embodiment of the present application provides a semiconductor device processing control method, device and high-energy particle beam lithography equipment, which can complete the processing of the semiconductor device without making an integrated circuit mask and improve the processing efficiency. The technical solution is as follows:
第一方面,本申请实施例提供了一种半导体器件的加工控制方法,包括:In a first aspect, an embodiment of the present application provides a processing control method for a semiconductor device, including:
获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;Acquiring an integrated circuit layout corresponding to the target semiconductor device; wherein the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layout corresponds to the pattern of one or more material layers of the target semiconductor device;
将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;Converting several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format;
根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;Acquiring high-energy particle beam processing parameters corresponding to each pixel in the gray-scale picture/digital file according to the correspondence between preset high-energy particle beam processing parameters and grayscale values/target parameter values;
在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层, 重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。After each layer of the material layer is fabricated on the target substrate, a layer of hard mask is set on the layer of material layer, according to the high-energy particle beam corresponding to each pixel in the corresponding grayscale picture/digital file Processing parameters, control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engrave the pattern corresponding to the grayscale picture/digital file to the material layer, and then remove the material layer For the hard mask on the material layer, the next material layer is sequentially fabricated, and the above steps are repeated until the hard mask on the last material layer is removed to obtain the target semiconductor device.
第二方面,本申请实施例提供了一种半导体器件的加工控制装置,包括:In a second aspect, an embodiment of the present application provides a processing control device for a semiconductor device, including:
第一获取模块,获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;The first acquisition module acquires the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of materials of the target semiconductor device layer pattern;
版图转化模块,用于将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;The layout conversion module is used to convert several layers of integrated circuit sub-layouts into several layers of grayscale images/digital files in a preset format;
第二获取模块,用于根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;The second acquisition module is used to obtain the high-energy particle beam processing parameters corresponding to each pixel in the gray-scale picture/digital file according to the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value ;
加工控制模块,用于在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。The processing control module is used to set a layer of hard mask on the material layer after each layer of the material layer is produced on the target substrate, according to each pixel in the corresponding grayscale image/digital file The high-energy particle beam processing parameters corresponding to the points control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer of this layer, and engrave the pattern corresponding to the grayscale image/digital file to this layer material layer, and then remove the hard mask on the material layer, sequentially fabricate the next layer of the material layer, repeat the above steps until the hard mask on the last layer of the material layer is removed, and obtain The target semiconductor device.
第三方面,本申请实施例提供了一种高能粒子束光刻设备,包括:粒子束发生器、粒子束控制器、工作腔室、工作载台、处理器、存储器以及存储在所述存储器中并可在所述处理器上运行的计算机程序,所述粒子束发生器、所述粒子束控制器、所述工作腔室以及所述工作载台分别与所述处理器建立数据连接,所述处理器执行所述计算机程序时实现如第一方面所述的半导体器件的加工控制方法的步骤。In a third aspect, an embodiment of the present application provides a high-energy particle beam lithography apparatus, including: a particle beam generator, a particle beam controller, a working chamber, a working stage, a processor, a memory, and a and a computer program that can run on the processor, the particle beam generator, the particle beam controller, the work chamber and the work platform respectively establish data connections with the processor, the When the processor executes the computer program, the steps of the semiconductor device processing control method according to the first aspect are realized.
本申请实施例中,通过获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。这种半导体器件的加工控制方 法不仅不需要制作多张掩膜版,降低加工成本,还能够灵活地修改集成电路版图,提高加工效率,并且,由于高能粒子束光刻设备在雕刻每一层材料层前,均在材料层上设置了一层硬掩模,雕刻后再去除掉硬掩模,从而能够有效缩窄高能粒子束线宽,提高半导体器件的加工精度。In the embodiment of the present application, by obtaining the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device. The pattern of the layer material layer; convert several layers of the integrated circuit sub-layout into several layers of grayscale pictures/digital files in the preset format; according to the preset high-energy particle beam processing parameters and the gray value/target parameter value Corresponding relationship, obtain the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file; After each layer of the material layer is produced on the target substrate, set a layer on the material layer Layer hard mask, according to the high-energy particle beam processing parameters corresponding to each pixel in the corresponding grayscale image/digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the layer On the material layer, engrave the pattern corresponding to the grayscale image/digital file to the material layer, then remove the hard mask on the material layer, make the next material layer in turn, and repeat the above steps , until the hard mask on the last layer of the material layer is removed to obtain the target semiconductor device. This semiconductor device processing control method not only does not need to make multiple masks, which reduces processing costs, but also can flexibly modify the layout of integrated circuits to improve processing efficiency. Before the layer, a hard mask is set on the material layer, and the hard mask is removed after engraving, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
为了更好地理解和实施,下面结合附图详细说明本申请的技术方案。For better understanding and implementation, the technical solution of the present application will be described in detail below in conjunction with the accompanying drawings.
附图说明Description of drawings
图1为本申请一个实施例提供的半导体器件的加工控制方法的流程示意图;FIG. 1 is a schematic flow chart of a processing control method for a semiconductor device provided by an embodiment of the present application;
图2为本申请一个实施例提供的缩窄高能粒子束线宽的原理示意图;Figure 2 is a schematic diagram of the principle of narrowing the linewidth of a high-energy particle beam provided by an embodiment of the present application;
图3为本申请一个实施例提供的半导体器件的加工控制方法中S104的流程示意图;FIG. 3 is a schematic flow chart of S104 in a semiconductor device processing control method provided by an embodiment of the present application;
图4为本申请另一个实施例提供的半导体器件的加工控制方法中S104的流程示意图;FIG. 4 is a schematic flow chart of S104 in a semiconductor device processing control method provided by another embodiment of the present application;
图5为本申请另一个实施例提供的半导体器件的加工控制方法的流程示意图;FIG. 5 is a schematic flow chart of a semiconductor device processing control method provided by another embodiment of the present application;
图6为本申请一个实施例提供的四个MOS管并联集成电路版图对应的灰度图片的示意图;FIG. 6 is a schematic diagram of a grayscale image corresponding to four MOS tube parallel integrated circuit layouts provided by an embodiment of the present application;
图7为本申请另一个实施例提供的半导体器件的加工控制方法中S207的流程示意图;FIG. 7 is a schematic flow chart of S207 in a semiconductor device processing control method provided by another embodiment of the present application;
图8为本申请一个实施例提供的半导体器件的加工控制装置的结构示意图;FIG. 8 is a schematic structural diagram of a processing control device for a semiconductor device provided by an embodiment of the present application;
图9为本申请一个实施例提供的高能粒子束光刻设备的结构示意图。FIG. 9 is a schematic structural diagram of a high-energy particle beam lithography device provided by an embodiment of the present application.
具体实施方式Detailed ways
这里将详细地对示例性实施例进行说明,其示例表示在附图中。下面的描述涉及附图时,除非另有表示,不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本申请相一致的所有实施方式。相反,它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置和方法的例子。Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.
在本申请使用的术语是仅仅出于描述特定实施例的目的,而非旨在限制本申请。在本申请和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式,除非上下文清楚地表示其他含义。还应当理解,本文中使用的术语“和/或”是指并包含一个或多个相关联的列出项目的任何或所有可能组合。The terminology used in this application is for the purpose of describing particular embodiments only, and is not intended to limit the application. As used in this application and the appended claims, the singular forms "a", "the", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term "and/or" as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.
应当理解,尽管在本申请可能采用术语第一、第二、第三等来描述各种信息,但这些信息不应限于这些术语。这些术语仅用来将同一类型的信息彼此区分开。例如,在不脱离本申请范围的情况下,第一信息也可以被称为第二信息,类似地,第二信息也可以被称为第一信息。取决于语境,如在此所使用的词语“如果”/“若”可以被解释成为“在……时”或“当……时”或“响应于确定”。It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, the information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of the present application, first information may also be called second information, and similarly, second information may also be called first information. Depending on the context, the words "if"/"if" as used herein may be interpreted as "at" or "when" or "in response to a determination".
请参阅图1,为本申请一个实施例提供的半导体器件的加工控制方法的流程示意图,所述方法包括如下步骤:Please refer to FIG. 1, which is a schematic flow chart of a method for processing a semiconductor device provided by an embodiment of the present application. The method includes the following steps:
S101:获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案。S101: Obtain an integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device .
在一个可选的实施例中,所述半导体器件的加工控制方法的执行主体可以为高能粒子束光刻设备,也可以为高能粒子束光刻设备中的组成部件,例如其内部的处理器或微处理器等;在另一个可选的实施例中,所述半导体器件的加工控制方法的执行主体可以为与高能粒子束光刻设备建立数据连接的外部设备,也可以为外部设备中的组成部件。In an optional embodiment, the execution subject of the processing control method of a semiconductor device may be a high-energy particle beam lithography equipment, or a component of a high-energy particle beam lithography equipment, such as its internal processor or Microprocessor, etc.; in another optional embodiment, the execution subject of the processing control method of the semiconductor device may be an external device that establishes a data connection with the high-energy particle beam lithography equipment, or it may be a component in the external device part.
在本申请实施例中,所述半导体器件的加工控制方法的执行主体为高能粒子束光刻设备。In the embodiment of the present application, the processing control method of the semiconductor device is executed by a high-energy particle beam lithography equipment.
具体地,高能粒子束光刻设备获取目标半导体器件对应的集成电路版图。Specifically, the high-energy particle beam lithography equipment obtains the integrated circuit layout corresponding to the target semiconductor device.
其中,所述目标半导体器件可以为任意类型的半导体器件,对于其具体类型在此不进行限定。Wherein, the target semiconductor device may be any type of semiconductor device, and its specific type is not limited here.
所述集成电路版图是指将电路设计电路图或电路描述语言映射到物理描述层面,集成电路版图中包括集成电路的器件类型、器件尺寸、器件之间的相对位置以及各个器件之间的连接关系等相关物理信息。The integrated circuit layout refers to mapping the circuit design circuit diagram or circuit description language to the physical description level. The integrated circuit layout includes the device type, device size, relative position between devices, and the connection relationship between each device, etc. relevant physical information.
所述集成电路版图中包括若干层集成电路子版图,每一层集成电路子版图分别对应目标半导体器件一层或者多层材料层的图案。The integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device.
在本申请实施例中,所述材料层包括但不仅限于有源层、绝缘层、多晶硅栅极层和金属层等。In the embodiment of the present application, the material layer includes, but is not limited to, an active layer, an insulating layer, a polysilicon gate layer, a metal layer, and the like.
S102:将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件。S102: Convert several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
高能粒子束光刻设备将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件。The high-energy particle beam lithography equipment converts several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
在一个可选的实施例中,针对灰度图片,所述预设格式可以为TIF格式,在其他可选的实施例中,针对灰度图片,所述预设格式可以为高能粒子束光刻设备可识别处理的其他图片格式。In an optional embodiment, for grayscale pictures, the preset format can be TIF format, and in other optional embodiments, for grayscale pictures, the preset format can be high energy particle beam lithography Other image formats that the device can recognize and process.
所述灰度图片中像素点的灰度值为0至255,灰度值为0表示像素点亮度较低,人体主观视觉感受其为黑色,灰度值为255表示像素点亮度较高,人体主观视觉感受其为白色。The grayscale value of the pixel in the grayscale picture is 0 to 255, the grayscale value of 0 indicates that the brightness of the pixel is low, and the human body subjectively perceives it as black, and the grayscale value of 255 indicates that the brightness of the pixel is relatively high. Subjective visual perception is white.
在一个可选的实施例中,该数字文件可以为灰度图片以外的其他类型的文件,例如:CAD文件、DAT格式文件以及TIFF格式文件等,在此不进行限定。In an optional embodiment, the digital file may be other types of files than the grayscale image, such as CAD files, DAT format files, and TIFF format files, etc., which are not limited here.
S103:根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述 灰度图片/数字文件中各像素点对应的高能粒子束加工参数;其中,所述目标参数值为用于体现所述数字文件存储的信息所采用的参数值。S103: Acquire the high-energy particle beam processing parameters corresponding to each pixel in the grayscale picture/digital file according to the preset correspondence between high-energy particle beam processing parameters and grayscale values/target parameter values; wherein, the The target parameter value is the parameter value used to embody the information stored in the digital file.
在一个可选的实施例中,所述预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系可以预先设置并存储在所述高能粒子束光刻设备中。在另一个可选的实施例中,所述预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系可以预先设置并存储在云端或上位机中,在使用时再下载至所述高能粒子束光刻设备中。In an optional embodiment, the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value may be preset and stored in the high-energy particle beam lithography equipment. In another optional embodiment, the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value can be preset and stored in the cloud or the host computer, and then downloaded when used into the high energy particle beam lithography equipment.
根据半导体器件类型的不同或者材料层的材料差异,相应的高能粒子束加工参数与灰度值/目标参数值之间的对应关系也不同。在所述高能粒子束光刻设备、云端或上位机中,可以根据半导体器件的标识,查找相应的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,也可以根据材料层的材料标识,查找相应的高能粒子束加工参数与灰度值/目标参数值之间的对应关系。Depending on the type of semiconductor device or the material difference of the material layer, the corresponding relationship between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value is also different. In the high-energy particle beam lithography equipment, the cloud or the upper computer, the corresponding relationship between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value can be found according to the identification of the semiconductor device, or according to the material layer Find the correspondence between the corresponding high-energy particle beam processing parameters and the gray value/target parameter value.
在一个可选的实施例中,第三方半导体器件设计厂家可以将设计的半导体器件标识或材料标识上传至所述云端中,并配置相应的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,从而能够使得高能粒子束光刻设备能够控制高能粒子束光刻设备完成更多类型的半导体器件的加工,满足更多的第三方客户需求。In an optional embodiment, the third-party semiconductor device design manufacturer can upload the designed semiconductor device identification or material identification to the cloud, and configure the corresponding relationship between high-energy particle beam processing parameters and gray value/target parameter value. The corresponding relationship between them can enable the high-energy particle beam lithography equipment to control the high-energy particle beam lithography equipment to complete the processing of more types of semiconductor devices and meet the needs of more third-party customers.
在本申请实施例中,所述高能粒子束加工参数包括高能粒子束加速电压和/或高能粒子束作用时间,为更精准地对半导体器件进行加工,高能粒子束光刻设备根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,具体如下:In the embodiment of the present application, the high-energy particle beam processing parameters include the high-energy particle beam acceleration voltage and/or the high-energy particle beam action time. In order to process semiconductor devices more accurately, the high-energy particle beam lithography equipment Correspondence between particle beam processing parameters and grayscale values/target parameter values, obtaining high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file, specifically as follows:
高能粒子束光刻设备根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加速电压,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越小时,使所述高能粒子束光刻设备的高能粒子束加速电压越高,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束加速电压越低。高能粒子束加速电压越高,发射出的高能粒子束的动能越高,因而在相同的时间内,能够雕刻掉更多的材料,得到更深的材料沟壑。The high-energy particle beam lithography equipment obtains the high-energy particle beam acceleration voltage corresponding to each pixel in the gray-scale picture/digital file according to the gray-scale value/target parameter value of the pixel in the gray-scale picture/digital file, when the The smaller the grayscale value/target parameter value of the pixel in the grayscale picture/digital file is, the higher the high-energy particle beam acceleration voltage of the high-energy particle beam lithography equipment is. When the pixel in the grayscale picture/digital file When the gray value of the point/target parameter value is larger, the high-energy particle beam acceleration voltage of the high-energy particle beam lithography equipment is lowered. The higher the accelerating voltage of the high-energy particle beam, the higher the kinetic energy of the emitted high-energy particle beam. Therefore, in the same time, more materials can be engraved and deeper material grooves can be obtained.
或者,高能粒子束光刻设备根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取所述灰度图片/数字文件中各像素点对应的高能粒子束作用时间,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越小时,使所述高能粒子束光刻设备的高能粒子束作用时间越长,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束作用时间越短。高能粒子束作用时间越长,在其他控制条件不变的情况下,也能够雕刻掉更多的材料,得到更深的材料沟壑。Alternatively, the high-energy particle beam lithography equipment obtains the high-energy particle beam action time corresponding to each pixel in the gray-scale picture/digital file according to the gray-scale value/target parameter value of the pixel in the gray-scale picture/digital file, When the grayscale value/target parameter value of the pixel in the grayscale picture/digital file is smaller, the longer the high-energy particle beam action time of the high-energy particle beam lithography equipment is, when the grayscale picture/digital file The greater the gray value of the middle pixel/target parameter value, the shorter the action time of the high-energy particle beam of the high-energy particle beam lithography equipment. The longer the action time of the high-energy particle beam is, the more material can be engraved and the deeper the material groove can be obtained under the condition that other control conditions remain unchanged.
或者,高能粒子束光刻设备获取所述灰度图片/数字文件中所有像素点的灰度均值/目标参数均值,当所述灰度均值/目标参数均值越小时,使所述高能粒子束光刻设备的所述高能粒子束加速电压越高,并根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取在所述高能粒子束加速电压不变的情况下所述灰度图片/数字文件中各像素点对应的高能粒子束作用时间,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越小时,使所述高能粒子束光刻设备的高能粒子束作用时间越长,当所诉灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束作用时间越短。通过高能粒子束加速电压与高能粒子束作用时间的配合,能够加快半导体器件的制作过程,提高制作效率。Or, the high-energy particle beam lithography equipment obtains the gray-scale mean value/target parameter mean value of all pixels in the gray-scale picture/digital file, and when the gray-scale mean value/target parameter mean value is smaller, the high-energy particle beam light The higher the acceleration voltage of the high-energy particle beam of the engraving equipment, and according to the gray value/target parameter value of the pixel point in the gray-scale picture/digital file, obtain the information obtained under the condition that the acceleration voltage of the high-energy particle beam remains unchanged. The high-energy particle beam action time corresponding to each pixel in the grayscale picture/digital file, when the grayscale value/target parameter value of the pixel point in the grayscale picture/digital file is smaller, the high-energy particle beam photolithography The longer the action time of the high-energy particle beam of the equipment is, the shorter the action time of the high-energy particle beam of the high-energy particle beam lithography equipment is when the gray value/target parameter value of the pixel in the grayscale picture/digital file is larger . Through the cooperation of the accelerating voltage of the high-energy particle beam and the action time of the high-energy particle beam, the manufacturing process of the semiconductor device can be accelerated and the manufacturing efficiency can be improved.
S104:在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。S104: After each layer of the material layer is fabricated on the target substrate, a layer of hard mask is set on the material layer, and according to the high-energy corresponding to each pixel in the corresponding grayscale image/digital file, Particle beam processing parameters, controlling the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engraving the pattern corresponding to the grayscale image/digital file to the material layer, and then removing the hard mask on the material layer, making the next material layer in turn, and repeating the above steps until the hard mask on the last material layer is removed to obtain the target semiconductor device.
高能粒子束光刻设备在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复地进行硬掩模的设置、下一层所述材料层的雕刻以及硬掩模的去除,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件After each layer of the material layer is fabricated on the target substrate by the high-energy particle beam lithography equipment, a layer of hard mask is set on the material layer, and each pixel in the corresponding grayscale image/digital file The high-energy particle beam processing parameters corresponding to the points control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer of this layer, and engrave the pattern corresponding to the grayscale image/digital file to this layer material layer, then remove the hard mask on the layer of material layer, sequentially make the next layer of the material layer, repeatedly carry out the setting of the hard mask, the engraving of the next layer of material layer and the hard mask removing until the hard mask on the last material layer is removed to obtain the target semiconductor device
由于高能粒子束光刻设备在雕刻每一层所述灰度图片/数字文件对应的图案至相应的材料层之前,均在该层材料层上设置了一层硬掩模,并在雕刻完成后再去除掉该层硬掩模,从而能够有效缩窄高能粒子束线宽,提高半导体器件的加工精度。Because the high-energy particle beam lithography equipment sets a layer of hard mask on the material layer before engraving the pattern corresponding to each layer of the grayscale image/digital file to the corresponding material layer, and after the engraving is completed The layer of hard mask is then removed, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
具体地,请参阅图2,图2为本申请一个实施例提供的缩窄高能粒子束线宽的原理示意图。高能粒子束光刻设备发射的高能粒子束的顶部形状类似于锥形,因此,当高能粒子束作用于材料层时,在材料层产生的沟壑也为锥形。请参阅图2中左侧的示意图,可以看出在高能粒子束作用于材料层之后,材料表面产生的沟壑宽度为A,也即高能粒子束线宽为A。请参阅图2中右侧的示意图,当在材料层上设置一层硬掩模后,高能粒子束会先作用于硬掩模再作用于材料层,在雕刻完成去除硬掩模之后,材料表面产生的沟壑宽度为B,也即高能粒子束线宽为B,显而易见地,在材料层上设置一层硬掩模,并在雕刻完成后再去除掉该层硬掩模的这种方式,能够有效缩窄高能粒子束线宽。Specifically, please refer to FIG. 2 , which is a schematic diagram of the principle of narrowing the linewidth of a high-energy particle beam provided by an embodiment of the present application. The shape of the top of the high-energy particle beam emitted by the high-energy particle beam lithography equipment is similar to that of a cone. Therefore, when the high-energy particle beam acts on the material layer, the gully formed in the material layer is also in the shape of a cone. Please refer to the schematic diagram on the left side of Figure 2, it can be seen that after the high-energy particle beam acts on the material layer, the width of the ravine generated on the surface of the material is A, that is, the line width of the high-energy particle beam is A. Please refer to the schematic diagram on the right side of Figure 2. When a layer of hard mask is set on the material layer, the high-energy particle beam will first act on the hard mask and then on the material layer. After the hard mask is removed after engraving, the surface of the material The width of the generated trench is B, that is, the line width of the high-energy particle beam is B. Obviously, setting a layer of hard mask on the material layer and removing the layer of hard mask after engraving can Effectively narrow the linewidth of high-energy particle beams.
在一个可选的实施例中,所述硬掩模可以为氮化硅薄膜、氧化硅薄膜、碳薄膜、铂薄膜或钨薄膜,对于其具体材料在此不进行限定。In an optional embodiment, the hard mask may be a silicon nitride film, a silicon oxide film, a carbon film, a platinum film or a tungsten film, and its specific material is not limited here.
在一个可选的实施例中,请参阅图3,步骤S104中去除该层材料层上的硬掩模,包括步骤S1041~S1043,具体如下:In an optional embodiment, referring to FIG. 3 , removing the hard mask on the material layer in step S104 includes steps S1041-S1043, specifically as follows:
S1041:控制所述高能粒子束光刻设备发射高能粒子束作用于所述硬掩模,轰击去除所述硬掩模。S1041: Control the high-energy particle beam lithography equipment to emit a high-energy particle beam to act on the hard mask, and bombard and remove the hard mask.
S1042:控制所述高能粒子束光刻设备在所述硬掩模上喷射腐蚀试剂,腐蚀去除所述硬掩模。S1042: Control the high-energy particle beam lithography equipment to spray an etching reagent on the hard mask, and remove the hard mask by etching.
S1043:控制所述高能粒子束光刻设备中的化学机械研磨装置,通过所述化学机械研磨装置去除所述硬掩模。S1043: Control the chemical mechanical polishing device in the high-energy particle beam lithography equipment, and remove the hard mask by using the chemical mechanical polishing device.
化学机械研磨(Chemical mechanical polishing,CMP)是一种结合机械研磨和化学研磨两种研磨方式的优势,即能够提高研磨精度,损伤低,又能够提高研磨效率。Chemical mechanical polishing (CMP) is a combination of the advantages of mechanical polishing and chemical polishing. It can improve the grinding accuracy, reduce damage, and improve the grinding efficiency.
在本申请实施例中,化学机械研磨装置集成在高能粒子束光刻设备中。In the embodiment of the present application, the chemical mechanical polishing device is integrated in the high-energy particle beam lithography equipment.
步骤S1041~S1043分别对应的是不同去除硬掩模的方式,可以根据加工的半导体器件或者材料层的材料的差异性合理地选择,在此不进行限定。Steps S1041 to S1043 respectively correspond to different ways of removing the hard mask, which can be reasonably selected according to differences in the processed semiconductor device or the material of the material layer, and are not limited here.
在一个可选的实施例中,所述材料层为通过控制高能粒子束光刻设备沉积的材料层,具体地,请参阅图4,所述在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模之前,步骤S104包括步骤S1044~S1045,具体如下:In an optional embodiment, the material layer is a material layer deposited by controlling high-energy particle beam lithography equipment. Specifically, please refer to FIG. 4 . After layering, before setting a layer of hard mask on the material layer, step S104 includes steps S1044~S1045, specifically as follows:
S1044:获取所述材料层对应的材料气体和所述材料层在所述目标基材上对应的沉积区域。S1044: Obtain a material gas corresponding to the material layer and a corresponding deposition area of the material layer on the target substrate.
所述材料气体可以为一种气体或多种气体,根据材料层的差异性而不同。The material gas may be one gas or multiple gases, which are different according to the difference of material layers.
在某些实施例中,为了使高能粒子束能够在材料层上雕刻出更好地图形效果,每一层材料层中包括多种材料,例如,在单晶硅的表面先镀上一层氧化硅,再在氧化硅的表面镀一层钽,那么相应的在制备这样的材料层时也需要多种材料气体。In some embodiments, in order to enable the high-energy particle beam to engrave a better graphic effect on the material layer, each layer of material layer includes multiple materials, for example, a layer of oxide oxide is first coated on the surface of single crystal silicon. Silicon, and then a layer of tantalum is plated on the surface of silicon oxide, so a variety of material gases are also required when preparing such a material layer.
S1045:控制所述高能粒子束光刻设备在所述沉积区域喷射所述材料气体,使所述材料气体分解后沉积在所述沉积区域,完成所述材料层的制作。S1045: Control the high-energy particle beam lithography equipment to spray the material gas in the deposition area, so that the material gas is decomposed and deposited in the deposition area, and the fabrication of the material layer is completed.
由于高能粒子束能分解金属蒸汽或气相绝缘材料等,因而通过所述高能粒子束光刻设备中的气体喷射装置在所述沉积区域喷射所述材料气体,同时发射高能粒子束分解材料气体,使分解后的材料气体沉积在沉积区域,完成材料层的制作。Since high-energy particle beams can decompose metal vapor or gas-phase insulating materials, etc., the gas injection device in the high-energy particle beam lithography equipment sprays the material gas in the deposition area, and at the same time emits high-energy particle beams to decompose the material gas, so that The decomposed material gas is deposited in the deposition area to complete the fabrication of the material layer.
上述方式通过控制一台高能粒子束光刻设备,就能完成材料层的铺设和图形的雕刻,实现半导体器件的加工,不仅能够减低成本,而且自动化程度更高。In the above method, by controlling a high-energy particle beam lithography equipment, the laying of material layers and the engraving of patterns can be completed, and the processing of semiconductor devices can be realized, which can not only reduce costs, but also have a higher degree of automation.
在一个可选的实施例中,在目标基材上每制作完一层所述材料层后,高能粒子束光刻设 备还可以根据预设的优化厚度范围和/或预设的优化平整度范围,控制所述高能粒子束对所述材料层进行处理,使所述材料层的当前厚度和/或当前平整度分别在所述预设的优化厚度范围和预设的优化平整度范围之内,从而进一步提高后续的雕刻效果,优化半导体器件的加工。In an optional embodiment, after each layer of the material layer is produced on the target substrate, the high-energy particle beam lithography equipment can also be based on the preset optimal thickness range and/or the preset optimal flatness range controlling the high-energy particle beam to process the material layer, so that the current thickness and/or current flatness of the material layer are respectively within the preset optimal thickness range and the preset optimal flatness range, Thereby, the subsequent engraving effect is further improved, and the processing of semiconductor devices is optimized.
可选的,所述预设的优化厚度范围为1nm至500nm,所述预设的优化平整度范围为0.5nm~5nm。Optionally, the preset optimized thickness range is 1 nm to 500 nm, and the preset optimized flatness range is 0.5 nm to 5 nm.
在另一个可选的实施例中,由于不同器件的性质和用途的不同,因而对于雕刻的加工精度要求不同,在控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上之前,高能粒子束光刻设备可以根据预设的雕刻尺寸阈值,控制电磁透镜进行所述高能粒子束微缩,使所述高能粒子束雕刻像素点尺寸小于所述雕刻尺寸阈值。In another optional embodiment, due to the different properties and uses of different devices, the processing accuracy requirements for engraving are different. When controlling the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on Before the material layer is placed on the material layer, the high-energy particle beam lithography equipment can control the electromagnetic lens to shrink the high-energy particle beam according to the preset engraving size threshold, so that the engraving pixel size of the high-energy particle beam is smaller than the engraving size threshold.
本申请实施例中,通过获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。这种半导体器件的加工控制方法不仅不需要制作多张掩膜版,降低加工成本,还能够灵活地修改集成电路版图,提高加工效率,并且,由于高能粒子束光刻设备在雕刻每一层材料层前,均在材料层上设置了一层硬掩模,雕刻后再去除掉硬掩模,从而能够有效缩窄高能粒子束线宽,提高半导体器件的加工精度。In the embodiment of the present application, by obtaining the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device. The pattern of the layer material layer; convert several layers of the integrated circuit sub-layout into several layers of grayscale pictures/digital files in the preset format; according to the preset high-energy particle beam processing parameters and the gray value/target parameter value Corresponding relationship, obtain the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file; After each layer of the material layer is produced on the target substrate, set a layer on the material layer Layer hard mask, according to the high-energy particle beam processing parameters corresponding to each pixel in the corresponding grayscale image/digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the layer On the material layer, engrave the pattern corresponding to the grayscale image/digital file to the material layer, then remove the hard mask on the material layer, make the next material layer in turn, and repeat the above steps , until the hard mask on the last layer of the material layer is removed to obtain the target semiconductor device. This semiconductor device processing control method not only does not need to make multiple masks, which reduces processing costs, but also can flexibly modify the layout of integrated circuits to improve processing efficiency. Before the layer, a hard mask is set on the material layer, and the hard mask is removed after engraving, so that the line width of the high-energy particle beam can be effectively narrowed, and the processing accuracy of the semiconductor device can be improved.
为提高半导体器件的加工效率,请参阅图5,其为本申请另一个实施例提供的半导体器件的加工控制方法的流程示意图,包括步骤S201~S207,其中步骤S201~S202,S206分别与步骤S101~S102,S103相同,具体如下:In order to improve the processing efficiency of semiconductor devices, please refer to FIG. 5, which is a schematic flow chart of a processing control method for semiconductor devices provided by another embodiment of the present application, including steps S201-S207, wherein steps S201-S202, S206 are respectively related to step S101 ~S102 and S103 are the same, details are as follows:
S201:获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案。S201: Obtain an integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to the pattern of one or more material layers of the target semiconductor device .
S202:将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件。S202: Transforming several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format.
S203:获取每层所述集成电路子版图对应的灰度图片/数字文件中的目标像素点以及所述 目标像素点在所述灰度图片/数字文件中的坐标;其中,所述目标像素点为灰度值/目标参数值低于预设阈值的像素点。S203: Obtain the target pixel in the grayscale image/digital file corresponding to the integrated circuit sub-layout of each layer and the coordinates of the target pixel in the grayscale image/digital file; wherein, the target pixel is the pixel whose gray value/target parameter value is lower than the preset threshold.
在集成电路子版图对应的灰度图片/数字文件中可能存在某些目标像素点的灰度值/目标参数值低于预设阈值,从而表明对应的材料层中目标像素点的坐标处需要被高能粒子束穿透。In the grayscale image/digital file corresponding to the sub-layout of the integrated circuit, there may be some target pixel grayscale values/target parameter values lower than the preset threshold, which indicates that the coordinates of the target pixel points in the corresponding material layer need to be detected. High energy particle beam penetration.
所述预设阈值与预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系相关,可以根据实际情况进行设定,在此不进行限定。The preset threshold is related to the corresponding relationship between the preset high-energy particle beam processing parameters and the gray value/target parameter value, and can be set according to the actual situation, which is not limited here.
若第i至j层所述集成电路子版图对应的灰度图片/数字文件中均存在坐标相同的目标像素点,那么这些目标像素点就是待调整像素点,通过调整待调整像素点的灰度值/目标参数值,从而使得在雕刻对应的材料层时,不在待调整像素点的坐标处进行雕刻。If there are target pixels with the same coordinates in the gray-scale pictures/digital files corresponding to the integrated circuit sub-layouts of the i to j layers, then these target pixels are the pixels to be adjusted, and by adjusting the grayscale of the pixels to be adjusted Value/target parameter value, so that when engraving the corresponding material layer, engraving is not performed at the coordinates of the pixel to be adjusted.
其中,所述集成电路子版图共有n层,1≤i<j≤n。Wherein, the integrated circuit sub-layout has n layers in total, 1≤i<j≤n.
请参阅图6,其为本申请一个实施例提供四个MOS管并联集成电路版图对应的灰度图片的示意图。图6中集成电路版图包括有源层、多晶硅栅极层、金属层和在有源层、多晶硅栅极层上的绝缘层(图未示出),在金属层、绝缘层以及多晶硅栅极层中就存在灰度值低于预设阈值的目标像素点。Please refer to FIG. 6 , which is a schematic diagram of a grayscale image corresponding to an integrated circuit layout of four MOS transistors connected in parallel according to an embodiment of the present application. The layout of the integrated circuit in Fig. 6 includes an active layer, a polysilicon gate layer, a metal layer, and an insulating layer (not shown) on the active layer, a polysilicon gate layer, and an insulating layer (not shown) on the metal layer, an insulating layer, and a polysilicon gate layer There are target pixels whose gray value is lower than the preset threshold.
S204:当第i至j层所述灰度图片/数字文件中均存在坐标相同的目标像素点时,得到第i至j层所述灰度图片/数字文件中的待调整像素点。S204: When target pixels with the same coordinates exist in the grayscale pictures/digital files of the i to j layers, obtain pixel points to be adjusted in the grayscale pictures/digital files of the i to j layers.
S205:将第i至j层所述灰度图片/数字文件中所述待调整像素点的灰度值/目标参数值设置为最高值,或者,获取最低的高能粒子束加工参数对应的第一灰度值/第一目标参数值,将第i至j层所述灰度图片/数字文件中所述待调整像素点的灰度值/目标参数值设置为所述第一灰度值/第一目标参数值。S205: Set the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file of the i-th layer to the highest value, or obtain the first value corresponding to the lowest high-energy particle beam processing parameter. Grayscale value/first target parameter value, the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file of the i-th layer is set as the first grayscale value/the first target parameter value A target parameter value.
在一个可选的实施例中,将第i至j层所述集成电路子版图对应的灰度图片/数字文件中所述待调整像素点的灰度值/目标参数值设置为最高值,从而使得在雕刻所述第i至j层所述集成电路子版图对应的图案时,不会雕刻到所述待调整像素点组成的图案。In an optional embodiment, the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file corresponding to the i-th layer of the integrated circuit sub-layout is set to the highest value, so that In this way, when engraving the patterns corresponding to the sub-layouts of the integrated circuits in the i to j layers, the patterns composed of pixels to be adjusted will not be engraved.
在另一个可选的实施例中,高能粒子束光刻设备先获取最低的高能粒子束加工参数对应的第一灰度值/第一目标参数值。In another optional embodiment, the high-energy particle beam lithography equipment first acquires the first grayscale value/first target parameter value corresponding to the lowest high-energy particle beam processing parameter.
高能粒子束加工参数包括高能粒子束加速电压和/或高能粒子束作用时间,在本申请实施例中,高能粒子束加速电压为0或高能粒子束作用时间为0时对应的灰度值/目标参数值为第一灰度值/第一目标参数值。The high-energy particle beam processing parameters include the high-energy particle beam acceleration voltage and/or the high-energy particle beam action time. In the embodiment of this application, the corresponding gray value/target when the high-energy particle beam acceleration voltage is 0 or the high-energy particle beam action time is 0 The parameter value is the first gray value/the first target parameter value.
由于高能粒子束加工参数与灰度值/目标参数值之间对应关系的不同,第一灰度值/第一目标参数值也会不同,对于其具体数值在此不进行限定。Due to the difference in correspondence between the high-energy particle beam processing parameters and the grayscale value/target parameter value, the first grayscale value/first target parameter value will also be different, and the specific values thereof are not limited here.
之后,高能粒子束光刻设备将所述第i至j层所述集成电路子版图对应的灰度图片/数字文件中,所述待调整像素点的灰度值/目标参数值均设置为所述第一灰度值/第一目标参数值,从而也能够使得在雕刻所述第i至j层所述灰度图片/数字文件对应的图案时,不会雕刻到所述待调整像素点组成的图案。Afterwards, the high-energy particle beam lithography equipment sets the grayscale value/target parameter value of the pixel to be adjusted to the specified The first grayscale value/first target parameter value, so that when engraving the pattern corresponding to the grayscale picture/digital file of the i-th layer, the composition of the pixels to be adjusted will not be engraved picture of.
S206:根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数。S206: Acquire the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file according to the preset correspondence between high-energy particle beam processing parameters and grayscale values/target parameter values.
S207:在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。S207: After each layer of the material layer is fabricated on the target substrate, a layer of hard mask is set on the material layer, and according to the high-energy corresponding to each pixel in the corresponding grayscale image/digital file, Particle beam processing parameters, controlling the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engraving the pattern corresponding to the grayscale image/digital file to the material layer, and then removing the hard mask on the material layer, making the next material layer in turn, and repeating the above steps until the hard mask on the last material layer is removed to obtain the target semiconductor device.
步骤S207与步骤S104的执行方式是相同的,都是每制作一层材料层,再设置一层硬掩模,之后在该材料层上完成集成电路子版图对应的图案的雕刻,再去除掉该层硬掩模,最终得到目标半导体器件。Step S207 is performed in the same manner as step S104. Each layer of material layer is made, and then a layer of hard mask is set, and then the engraving of the pattern corresponding to the sub-layout of the integrated circuit is completed on the material layer, and then the mask is removed. layer hard mask, and finally obtain the target semiconductor device.
但是,由于在本实施例中,在雕刻第i至j层材料层时,均没有雕刻待调整像素点组成的图案,因此本步骤与步骤S104存在区别,请参阅图7,步骤S207包括步骤S2071~S2072,具体区别过程如下:However, since in this embodiment, when engraving the i to j material layers, there is no engraving pattern composed of pixels to be adjusted, so there is a difference between this step and step S104, please refer to FIG. 7, step S207 includes step S2071 ~S2072, the specific difference process is as follows:
S2071:在所述目标基材上依次制作第i至j层材料层,并在每制作完一层所述材料层之后,再在该层材料层上设置一层所述硬掩模,分别根据第i至j层所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制所述高能粒子束光刻设备发射高能粒子束作用于第i至j层所述材料层上,雕刻第i至j层所述灰度图片/数字文件中除所述待调整像素点组成的图案以外的所有图案至相应的第i至j层所述材料层,并在雕刻完每一层所述材料层之后,去除该层材料层上的所述硬掩模。S2071: sequentially fabricate the i-th to j-th material layers on the target substrate, and after each layer of the material layer is fabricated, set a layer of the hard mask on the material layer, respectively according to The high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file of the i-j layer, control the high-energy particle beam lithography equipment to emit high-energy particle beams to act on the material layer of the i-j layer , engraving all the patterns in the i-th layer of the grayscale image/digital file except the pattern composed of pixels to be adjusted to the corresponding i-j-th layer of the material layer, and after engraving each layer After the material layer, the hard mask on the material layer is removed.
高能粒子束光刻设备每铺设一层材料层(第i至j层)后,在该层材料层上再铺设一层硬掩模,之后,根据该层集成电路子版图对应的灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制所述高能粒子束光刻设备发射高能粒子束作用于该层材料层上,雕刻该层集成电路子版图对应的灰度图片/数字文件除所述待调整像素点组成的图案以外的所有图案至该层材料层,再去除掉该层材料层上的硬掩模。After each layer of material layer (layer i to j) is laid in the high-energy particle beam lithography equipment, a layer of hard mask is laid on the layer of material layer, and then, according to the grayscale image/ The high-energy particle beam processing parameters corresponding to each pixel in the digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to act on the material layer, and engrave the grayscale image/digital file corresponding to the integrated circuit sub-layout of this layer All patterns except the pattern composed of pixels to be adjusted are transferred to the material layer, and then the hard mask on the material layer is removed.
对于第i至j层材料层以外的层次的雕刻,与步骤S104中的雕刻无差异,不再赘述。For the engraving of layers other than the i to j material layers, there is no difference from the engraving in step S104, and will not be repeated here.
S2072:去除第j层所述材料层上的所述硬掩模之后,根据所述待调整像素点的坐标,控 制所述高能粒子束光刻设备发射高能粒子束作用于第j层材料层中所述待调整像素点的坐标处,在所述待调整像素点的坐标处穿透第i至j层材料层。S2072: After removing the hard mask on the j-th material layer, control the high-energy particle beam lithography equipment to emit a high-energy particle beam to act on the j-th material layer according to the coordinates of the pixels to be adjusted At the coordinates of the pixels to be adjusted, the i to jth material layers are penetrated at the coordinates of the pixels to be adjusted.
高能粒子束光刻设备在去除第j层所述材料层上的所述硬掩模之后,再根据所述待调整像素点的坐标,控制所述高能粒子束光刻设备发射高能粒子束作用于第j层材料层中所述待调整像素点的坐标处,在所述待调整像素点的坐标处穿透第i至j层材料层。After the high-energy particle beam lithography equipment removes the hard mask on the material layer of the j-th layer, and then according to the coordinates of the pixels to be adjusted, the high-energy particle beam lithography equipment is controlled to emit high-energy particle beams to act on At the coordinates of the pixels to be adjusted in the jth material layer, the i to jth material layers are penetrated at the coordinates of the pixels to be adjusted.
其中,所述穿透每层材料层的高能粒子束加工参数可以根据实验获取并预存储在高能粒子束光刻设备中,根据材料层的标识能够查找到对应的高能粒子束加工参数,从而获取到穿透第i至j层的高能粒子束加工参数。Wherein, the high-energy particle beam processing parameters that penetrate each material layer can be obtained according to experiments and pre-stored in the high-energy particle beam lithography equipment, and the corresponding high-energy particle beam processing parameters can be found according to the identification of the material layer, thereby obtaining to the processing parameters of the high-energy particle beam that penetrates the i-th layer.
本实施例中,通过获取每层集成电路子版图对应的灰度图片/数字文件中的目标像素点以及目标像素点的坐标,从而获取到第i至j层所述集成电路子版图对应的灰度图片/数字文件中均存在的坐标相同的目标像素点,也即待调整像素点,再通过重新设置待调整像素点的灰度值/目标参数值,从而使得在雕刻所述第i至j层所述集成电路子版图对应的图案分别至第i至j层材料层时,不会雕刻到待调整像素点组成的图案,最后在雕刻完第j层材料层并去除掉硬掩模后,统一根据待调整像素点的坐标,控制所述高能粒子束光刻设备发射高能粒子束作用于第j层材料层中所述待调整像素点的坐标处,在所述待调整像素点的坐标处穿透第i至j层材料层,实现合并雕刻,有效地提高了半导体器件的加工效率。In this embodiment, by obtaining the target pixel and the coordinates of the target pixel in the grayscale image/digital file corresponding to each layer of the integrated circuit sub-layout, the grayscale corresponding to the i-th layer of the integrated circuit sub-layout is obtained. The target pixels with the same coordinates that exist in the high-degree pictures/digital files, that is, the pixels to be adjusted, and then reset the gray value/target parameter value of the pixels to be adjusted, so that the i to j When the patterns corresponding to the sub-layout of the integrated circuit described in the first layer are respectively on the i-th to j-th material layers, the pattern composed of pixels to be adjusted will not be engraved. Finally, after the j-th material layer is engraved and the hard mask is removed, According to the coordinates of the pixels to be adjusted, the high-energy particle beam lithography equipment is controlled to emit high-energy particle beams to act on the coordinates of the pixels to be adjusted in the jth material layer, and at the coordinates of the pixels to be adjusted The method penetrates through the i-th material layer to achieve combined engraving, which effectively improves the processing efficiency of semiconductor devices.
请参阅图8,图8为本申请一个实施例提供的半导体器件的加工控制装置的结构示意图。该装置可以通过软件、硬件或两者的结合实现成为高能粒子束光刻设备的全部或一部分。该装置8包括第一获取模块81、版图转化模块82、第二获取模块83和加工控制模块84:Please refer to FIG. 8 . FIG. 8 is a schematic structural diagram of a processing control device for a semiconductor device provided by an embodiment of the present application. The device can be realized as all or a part of the high-energy particle beam lithography equipment through software, hardware or a combination of the two. The device 8 includes a first acquisition module 81, a layout conversion module 82, a second acquisition module 83 and a processing control module 84:
第一获取模块81,用于获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;The first acquisition module 81 is configured to acquire the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of the target semiconductor device. Patterns of multilayer material layers;
版图转化模块82,用于将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;The layout conversion module 82 is used to convert several layers of integrated circuit sub-layouts into several layers of grayscale images/digital files in preset formats;
第二获取模块83,用于根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;The second acquisition module 83 is used to obtain the high-energy particle beam processing corresponding to each pixel in the grayscale picture/digital file according to the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value parameter;
加工控制模块84,用于在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得 到所述目标半导体器件。The processing control module 84 is used to set a layer of hard mask on the material layer after each layer of the material layer is fabricated on the target base material, according to each of the corresponding grayscale pictures/digital files The high-energy particle beam processing parameters corresponding to the pixels control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the material layer, and engrave the pattern corresponding to the grayscale image/digital file to the layer of material, and then remove the hard mask on the material layer, sequentially fabricate the next material layer, and repeat the above steps until the hard mask on the last material layer is removed, The target semiconductor device is obtained.
需要说明的是,上述实施例提供的半导体器件的加工控制装置在执行半导体器件的加工控制方法时,仅以上述各功能模块的划分进行举例说明,实际应用中,可以根据需要而将上述功能分配由不同的功能模块完成,即将设备的内部结构划分为不同的功能模块,以完成以上描述的全部或者部分功能。另外,上述实施例提供的半导体器件的加工控制装置与半导体器件的加工控制方法属于同一构思,其体现实现过程详见方法实施例,这里不再赘述。It should be noted that, when the semiconductor device processing control device provided in the above-mentioned embodiments executes the semiconductor device processing control method, it only uses the division of the above-mentioned functional modules as an example. In practical applications, the above-mentioned functions can be allocated according to needs. It is completed by different functional modules, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the semiconductor device processing control device provided in the above embodiments and the semiconductor device processing control method belong to the same concept, and the implementation process thereof is detailed in the method embodiment, and will not be repeated here.
请参见图9,其为本申请一个实施例提供的高能粒子束光刻设备的结构示意图。如图9示,所述高能粒子束光刻设备9可以包括:粒子束发生器90、粒子束控制器91、工作腔室92、工作载台93、处理器94、存储器95以及存储在所述存储器95中并可在所述处理器94上运行的计算机程序96,例如:半导体器件的加工控制程序;所述粒子束发生器90、所述粒子束控制器91、所述工作腔室92以及所述工作载台93分别与所述处理器94建立数据连接;所述处理器94执行所述计算机程序96时实现上述各方法实施例中的步骤,例如图1所示的步骤S101至S104。Please refer to FIG. 9 , which is a schematic structural diagram of a high-energy particle beam lithography device provided by an embodiment of the present application. As shown in Figure 9, the high-energy particle beam lithography equipment 9 may include: a particle beam generator 90, a particle beam controller 91, a working chamber 92, a working stage 93, a processor 94, a memory 95, and a In the memory 95 and the computer program 96 that can run on the processor 94, for example: the processing control program of the semiconductor device; the particle beam generator 90, the particle beam controller 91, the working chamber 92 and The work platforms 93 respectively establish data connections with the processors 94; when the processors 94 execute the computer programs 96, the steps in the above-mentioned method embodiments are implemented, such as steps S101 to S104 shown in FIG. 1 .
其中,所述处理器94可以包括一个或多个处理核心。处理器94利用各种接口和线路连接所述高能粒子束光刻设备9内的各个部分,通过运行或执行存储在存储器95内的指令、程序、代码集或指令集,以及调用存储器95内的数据,执行高能粒子束光刻设备9的各种功能和处理数据,可选的,处理器94可以采用数字信号处理(Digital Signal Processing,DSP)、现场可编程门阵列(Field-Programmable Gate Array,FPGA)、可编程逻辑阵列(Programble Logic Array,PLA)中的至少一个硬件形式来实现。处理器94可集成中央处理器(Central Processing Unit,CPU)、图像处理器(Graphics Processing Unit,GPU)和调制解调器等中的一种或几种的组合。其中,CPU主要处理操作系统、用户界面和应用程序等;GPU用于负责触摸显示屏所需要显示的内容的渲染和绘制;调制解调器用于处理无线通信。可以理解的是,上述调制解调器也可以不集成到处理器94中,单独通过一块芯片进行实现。Wherein, the processor 94 may include one or more processing cores. The processor 94 uses various interfaces and lines to connect various parts in the high-energy particle beam lithography equipment 9, and runs or executes instructions, programs, code sets or instruction sets stored in the memory 95, and calls the memory 95. Data, perform various functions of the high-energy particle beam lithography equipment 9 and process data. Optionally, the processor 94 can use digital signal processing (Digital Signal Processing, DSP), field-programmable gate array (Field-Programmable Gate Array, FPGA), Programmable Logic Array (Programble Logic Array, PLA) in at least one hardware form to achieve. The processor 94 may integrate one or a combination of a central processing unit (Central Processing Unit, CPU), an image processor (Graphics Processing Unit, GPU), a modem, and the like. Among them, the CPU mainly processes the operating system, user interface and application programs, etc.; the GPU is used for rendering and drawing the content that needs to be displayed on the touch screen; the modem is used for processing wireless communication. It can be understood that, the above-mentioned modem may also not be integrated into the processor 94, but may be realized by a single chip.
其中,存储器95可以包括随机存储器(Random Access Memory,RAM),也可以包括只读存储器(Read-Only Memory)。可选的,该存储器95包括非瞬时性计算机可读介质(non-transitory computer-readable storage medium)。存储器95可用于存储指令、程序、代码、代码集或指令集。存储器95可包括存储程序区和存储数据区,其中,存储程序区可存储用于实现操作系统的指令、用于至少一个功能的指令(比如触控指令等)、用于实现上述各个方法实施例的指令等;存储数据区可存储上面各个方法实施例中涉及到的数据等。存储器95可选的还可以是至少一个位于远离前述处理器94的存储装置。Wherein, the memory 95 may include a random access memory (Random Access Memory, RAM), and may also include a read-only memory (Read-Only Memory). Optionally, the memory 95 includes a non-transitory computer-readable storage medium. Memory 95 may be used to store instructions, programs, codes, sets of codes or sets of instructions. The memory 95 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing the operating system, instructions for at least one function (such as touch instructions, etc.), and instructions for implementing the above-mentioned various method embodiments. Instructions, etc.; the storage data area can store the data, etc. involved in the above method embodiments. Optionally, the memory 95 may also be at least one storage device located away from the aforementioned processor 94 .
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述或记载的部 分,可以参见其它实施例的相关描述。In the above-mentioned embodiments, the description of each embodiment has its own emphasis. For the part that is not detailed or recorded in a certain embodiment, you can refer to the relevant descriptions of other embodiments.
本领域普通技术人员可以意识到,结合本文中所公开的实施例描述的各示例的单元及算法步骤,能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行,取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能,但是这种实现不应认为超出本发明的范围。Those skilled in the art can appreciate that the units and algorithm steps of the examples described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed by hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art may use different methods to implement the described functions for each specific application, but such implementation should not be regarded as exceeding the scope of the present invention.
本发明并不局限于上述实施方式,如果对本发明的各种改动或变形不脱离本发明的精神和范围,倘若这些改动和变形属于本发明的权利要求和等同技术范围之内,则本发明也意图包含这些改动和变形。The present invention is not limited to the above-mentioned embodiments, if the various changes or deformations of the present invention do not depart from the spirit and scope of the present invention, if these changes and deformations belong to the claims of the present invention and the equivalent technical scope, then the present invention is also It is intended that such modifications and variations are included.

Claims (10)

  1. 一种半导体器件的加工控制方法,其特征在于,包括步骤:A processing control method for a semiconductor device, characterized in that it comprises the steps of:
    获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;Acquiring an integrated circuit layout corresponding to the target semiconductor device; wherein the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layout corresponds to the pattern of one or more material layers of the target semiconductor device;
    将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;Converting several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format;
    根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;其中,所述目标参数值为用于体现所述数字文件存储的信息所采用的参数值;According to the correspondence between preset high-energy particle beam processing parameters and grayscale values/target parameter values, obtain high-energy particle beam processing parameters corresponding to each pixel in the grayscale picture/digital file; wherein, the target parameters The value is a parameter value used to reflect the information stored in the digital file;
    在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。After each layer of the material layer is fabricated on the target substrate, a layer of hard mask is set on the layer of material layer, according to the high-energy particle beam corresponding to each pixel in the corresponding grayscale picture/digital file Processing parameters, control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer, engrave the pattern corresponding to the grayscale picture/digital file to the material layer, and then remove the material layer For the hard mask on the material layer, the next material layer is sequentially fabricated, and the above steps are repeated until the hard mask on the last material layer is removed to obtain the target semiconductor device.
  2. 根据权利要求1所述的半导体器件的加工控制方法,其特征在于,所述去除该层材料层上的硬掩模,包括步骤:The processing control method of a semiconductor device according to claim 1, wherein said removing the hard mask on the material layer comprises the steps of:
    控制所述高能粒子束光刻设备发射高能粒子束作用于所述硬掩模,轰击去除所述硬掩模;controlling the high-energy particle beam lithography equipment to emit high-energy particle beams to act on the hard mask, and bombard to remove the hard mask;
    或者,or,
    控制所述高能粒子束光刻设备在所述硬掩模上喷射腐蚀试剂,腐蚀去除所述硬掩模;controlling the high-energy particle beam lithography equipment to spray an etching reagent on the hard mask, and etching and removing the hard mask;
    或者,or,
    控制所述高能粒子束光刻设备中的化学机械研磨装置,通过所述化学机械研磨装置去除所述硬掩模。controlling a chemical mechanical polishing device in the high-energy particle beam lithography equipment, and removing the hard mask through the chemical mechanical polishing device.
  3. 根据权利要求1或2所述的半导体器件的加工控制方法,其特征在于:所述硬掩模为氮化硅薄膜、氧化硅薄膜、碳薄膜、铂薄膜或钨薄膜。The process control method of a semiconductor device according to claim 1 or 2, characterized in that the hard mask is a silicon nitride film, a silicon oxide film, a carbon film, a platinum film or a tungsten film.
  4. 根据权利要求1所述的半导体器件的加工控制方法,其特征在于,The process control method of a semiconductor device according to claim 1, wherein:
    所述高能粒子束加工参数包括高能粒子束加速电压和/或高能粒子束作用时间,The high-energy particle beam processing parameters include high-energy particle beam acceleration voltage and/or high-energy particle beam action time,
    根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,包括步骤:According to the correspondence between preset high-energy particle beam processing parameters and grayscale values/target parameter values, obtaining high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file includes the steps of:
    根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加速电压,当所述灰度图片/数字文件中像素点的灰度值/目标 参数值越小时,使所述高能粒子束光刻设备的高能粒子束加速电压越高,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束加速电压越低;Acquire the high-energy particle beam acceleration voltage corresponding to each pixel in the grayscale picture/digital file according to the grayscale value/target parameter value of the pixel in the grayscale picture/digital file, when the grayscale picture/digital file The smaller the gray value/target parameter value of the pixel in the file, the higher the high energy particle beam acceleration voltage of the high energy particle beam lithography equipment, when the gray value of the pixel in the gray image/digital file/ When the target parameter value is larger, the high-energy particle beam acceleration voltage of the high-energy particle beam lithography equipment is lower;
    或,or,
    根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取所述灰度图片/数字文件中各像素点对应的高能粒子束作用时间,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越小时,使所述高能粒子束光刻设备的高能粒子束作用时间越长,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束作用时间越短;According to the grayscale value/target parameter value of the pixel in the grayscale picture/digital file, the high-energy particle beam action time corresponding to each pixel in the grayscale picture/digital file is obtained, when the grayscale picture/digital file The smaller the grayscale value/target parameter value of the pixel in the file, the longer the high-energy particle beam action time of the high-energy particle beam lithography equipment is, when the grayscale value of the pixel in the grayscale picture/digital file/ When the value of the target parameter is larger, the action time of the high-energy particle beam of the high-energy particle beam lithography equipment is shortened;
    或,or,
    获取所述灰度图片/数字文件中所有像素点的灰度均值/目标参数均值,当所述灰度均值/目标参数均值越小时,使所述高能粒子束光刻设备的所述高能粒子束加速电压越高,并根据所述灰度图片/数字文件中像素点的灰度值/目标参数值,获取在所述高能粒子束加速电压不变的情况下所述灰度图片/数字文件中各像素点对应的高能粒子束作用时间,当所述灰度图片/数字文件中像素点的灰度值/目标参数值越小时,使所述高能粒子束光刻设备的高能粒子束作用时间越长,当所诉灰度图片/数字文件中像素点的灰度值/目标参数值越大时,使所述高能粒子束光刻设备的高能粒子束作用时间越短。Obtain the grayscale mean value/target parameter mean value of all pixels in the grayscale picture/digital file, and when the grayscale mean value/target parameter mean value is smaller, make the high-energy particle beam of the high-energy particle beam lithography equipment The higher the acceleration voltage is, and according to the gray value/target parameter value of the pixel in the gray scale picture/digital file, the acceleration voltage in the gray scale picture/digital file is obtained under the condition that the acceleration voltage of the high-energy particle beam is constant. The action time of the high-energy particle beam corresponding to each pixel point, when the gray value/target parameter value of the pixel point in the grayscale picture/digital file is smaller, the higher the action time of the high-energy particle beam of the high-energy particle beam lithography equipment is. Longer, when the grayscale value/target parameter value of the pixel in the grayscale picture/digital file is greater, the action time of the high-energy particle beam of the high-energy particle beam lithography equipment is shortened.
  5. 根据权利要求1所述的半导体器件的加工控制方法,其特征在于,所述将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件之后,包括步骤:The processing control method of a semiconductor device according to claim 1, characterized in that, after converting several layers of the integrated circuit sub-layout into several layers of grayscale images/digital files in a preset format, the steps include:
    获取每层所述集成电路子版图对应的灰度图片/数字文件中的目标像素点以及所述目标像素点在所述灰度图片/数字文件中的坐标;其中,所述目标像素点为灰度值/目标参数值低于预设阈值的像素点;Obtain the target pixel in the grayscale picture/digital file corresponding to the integrated circuit sub-layout of each layer and the coordinates of the target pixel in the grayscale picture/digital file; wherein, the target pixel is gray Pixels whose degree value/target parameter value is lower than the preset threshold;
    当第i至j层所述灰度图片/数字文件中均存在坐标相同的目标像素点时,得到第i至j层所述灰度图片/数字文件中的待调整像素点;When there are target pixels with the same coordinates in the grayscale picture/digital file of the i to j layers, obtain the pixel to be adjusted in the grayscale picture/digital file of the i to j layer;
    将第i至j层所述灰度图片/数字文件中所述待调整像素点的灰度值/目标参数值设置为最高值,或者,获取最低的高能粒子束加工参数对应的第一灰度值/第一目标参数值,将第i至j层所述灰度图片/数字文件中所述待调整像素点的灰度值/目标参数值设置为所述第一灰度值/第一目标参数值。Set the grayscale value/target parameter value of the pixel to be adjusted in the grayscale picture/digital file of the i-th layer to the highest value, or obtain the first grayscale corresponding to the lowest high-energy particle beam processing parameter Value/first target parameter value, set the grayscale value/target parameter value of the pixel to be adjusted in the grayscale image/digital file of the i to j layers as the first grayscale value/first target parameter value.
  6. 根据权利要求5所述的半导体器件的加工控制方法,其特征在于,所述在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子 束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件,包括步骤:The processing control method of a semiconductor device according to claim 5, characterized in that, after each layer of the material layer is fabricated on the target substrate, a layer of hard mask is arranged on the layer of material layer, According to the high-energy particle beam processing parameters corresponding to each pixel in the corresponding grayscale image/digital file, control the high-energy particle beam lithography equipment to emit high-energy particle beams to pass through the hard mask and act on the material layer, engraving The pattern corresponding to the grayscale picture/digital file is transferred to the material layer, and then the hard mask on the material layer is removed, and the next material layer is sequentially made, and the above steps are repeated until the last layer is removed. Layer the hard mask on the material layer to obtain the target semiconductor device, comprising the steps of:
    在所述目标基材上依次制作第i至j层材料层,并在每制作完一层所述材料层之后,再在该层材料层上设置一层所述硬掩模,分别根据第i至j层所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制所述高能粒子束光刻设备发射高能粒子束作用于第i至j层所述材料层上,雕刻第i至j层所述灰度图片/数字文件中除所述待调整像素点组成的图案以外的所有图案至相应的第i至j层所述材料层,并在雕刻完每一层所述材料层之后,去除该层材料层上的所述硬掩模;Fabricate the i to jth material layers sequentially on the target substrate, and after each layer of the material layer is fabricated, set a layer of the hard mask on the material layer, respectively according to the i-th to the high-energy particle beam processing parameters corresponding to each pixel in the grayscale image/digital file of the j-th layer, and control the high-energy particle beam lithography equipment to emit a high-energy particle beam to act on the material layer of the i-jth layer, engraving All the patterns in the grayscale picture/digital file of the i to j layer except the pattern formed by the pixels to be adjusted are transferred to the corresponding i to j layer of the material layer, and after the engraving of each layer, the After the material layer, removing the hard mask on the material layer;
    去除第j层所述材料层上的所述硬掩模之后,根据所述待调整像素点的坐标,控制所述高能粒子束光刻设备发射高能粒子束作用于第j层材料层中所述待调整像素点的坐标处,在所述待调整像素点的坐标处穿透第i至j层材料层。After removing the hard mask on the material layer of the jth layer, according to the coordinates of the pixels to be adjusted, the high-energy particle beam lithography equipment is controlled to emit a high-energy particle beam to act on the j-th material layer. At the coordinates of the pixel points to be adjusted, the i to jth material layers are penetrated at the coordinates of the pixel points to be adjusted.
  7. 根据权利要求1所述的半导体器件的加工控制方法,其特征在于,所述在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模之前,包括步骤:The processing control method of a semiconductor device according to claim 1, wherein after each layer of the material layer is fabricated on the target substrate, before setting a layer of hard mask on the layer of material layer , including the steps:
    获取所述材料层对应的材料气体和所述材料层在所述目标基材上对应的沉积区域;Acquiring the material gas corresponding to the material layer and the corresponding deposition area of the material layer on the target substrate;
    控制所述高能粒子束光刻设备在所述沉积区域喷射所述材料气体,使所述材料气体分解后沉积在所述沉积区域,完成所述材料层的制作。Controlling the high-energy particle beam lithography equipment to spray the material gas in the deposition area, so that the material gas is decomposed and deposited in the deposition area to complete the fabrication of the material layer.
  8. 根据权利要求1所述的半导体器件的加工控制方法,其特征在于,所述在目标基材上每制作完一层所述材料层之后,再在该层材料层上设置一层硬掩模之前,包括步骤:The processing control method of a semiconductor device according to claim 1, wherein after each layer of the material layer is fabricated on the target substrate, before setting a layer of hard mask on the layer of material layer , including the steps:
    根据预设的优化厚度范围和/或预设的优化平整度范围,控制所述高能粒子束对所述材料层进行处理,使所述材料层的当前厚度和/或当前平整度分别在所述预设的优化厚度范围和预设的优化平整度范围之内。According to the preset optimal thickness range and/or the preset optimal flatness range, the high-energy particle beam is controlled to process the material layer, so that the current thickness and/or current flatness of the material layer are respectively within the Within the preset optimized thickness range and the preset optimized flatness range.
  9. 一种半导体器件的加工控制装置,其特征在于,包括:A processing control device for a semiconductor device, characterized in that it includes:
    第一获取模块,获取目标半导体器件对应的集成电路版图;其中,所述集成电路版图包括若干层集成电路子版图,每一层集成电路子版图分别对应所述目标半导体器件一层或者多层材料层的图案;The first acquisition module acquires the integrated circuit layout corresponding to the target semiconductor device; wherein, the integrated circuit layout includes several layers of integrated circuit sub-layouts, and each layer of integrated circuit sub-layouts corresponds to one or more layers of materials of the target semiconductor device layer pattern;
    版图转化模块,用于将若干层所述集成电路子版图分别转化为预设格式的若干层灰度图片/数字文件;The layout conversion module is used to convert several layers of integrated circuit sub-layouts into several layers of grayscale images/digital files in a preset format;
    第二获取模块,用于根据预设的高能粒子束加工参数与灰度值/目标参数值之间的对应关系,获取所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数;The second acquisition module is used to obtain the high-energy particle beam processing parameters corresponding to each pixel in the gray-scale picture/digital file according to the correspondence between the preset high-energy particle beam processing parameters and the gray value/target parameter value ;
    加工控制模块,用于在目标基材上每制作完一层所述材料层之后,再在该层材料层上设 置一层硬掩模,根据相应的所述灰度图片/数字文件中各像素点对应的高能粒子束加工参数,控制高能粒子束光刻设备发射高能粒子束穿过所述硬掩模作用于该层材料层上,雕刻所述灰度图片/数字文件对应的图案至该层材料层,之后去除该层材料层上的所述硬掩模,依次制作下一层所述材料层,重复执行上述步骤,直至去掉最后一层所述材料层上的所述硬掩模,得到所述目标半导体器件。The processing control module is used to set a layer of hard mask on the material layer after each layer of the material layer is produced on the target substrate, according to each pixel in the corresponding grayscale image/digital file The high-energy particle beam processing parameters corresponding to the points control the high-energy particle beam lithography equipment to emit high-energy particle beams through the hard mask to act on the material layer of this layer, and engrave the pattern corresponding to the grayscale image/digital file to this layer material layer, and then remove the hard mask on the material layer, sequentially fabricate the next layer of the material layer, repeat the above steps until the hard mask on the last layer of the material layer is removed, and obtain The target semiconductor device.
  10. 一种高能粒子束光刻设备,其特征在于,包括:粒子束发生器、粒子束控制器、工作腔室、工作载台、处理器、存储器以及存储在所述存储器中并可在所述处理器上运行的计算机程序,所述粒子束发生器、所述粒子束控制器、所述工作腔室以及所述工作载台分别与所述处理器建立数据连接,所述处理器执行所述计算机程序时实现如权利要求1至8任一项所述方法的步骤。A high-energy particle beam lithography equipment, characterized in that it includes: a particle beam generator, a particle beam controller, a working chamber, a working platform, a processor, a memory, and a The computer program running on the device, the particle beam generator, the particle beam controller, the work chamber and the work platform respectively establish data connections with the processor, and the processor executes the computer The program realizes the steps of the method according to any one of claims 1 to 8.
PCT/CN2022/077612 2022-02-24 2022-02-24 Method and apparatus for processing and controlling semiconductor device, and high-energy particle beam photolithography device WO2022252707A1 (en)

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